• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.145-145
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• 2008

High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).

• Structural Engineering and Mechanics
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• v.75 no.4
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• pp.507-518
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• 2020

With the rapid development of rail transit, rail transit noise needs to be paid more and more attention. In order to accurately and effectively analyze the characteristics of low-frequency noise, a prediction model of vibration of box girder was established based on the hybrid FE-SEA method. When the train speed is 140 km/h, 200 km/h and 250 km/h, the vibration and noise of the box girder induced by the vertical wheel-rail interaction in the frequency range of 20-500 Hz are analyzed. Detailed analysis of the energy level, sound pressure contribution, modal analysis and vibration loss power of each slab at the operating speed of 140 km /h. The results show that: (1) When the train runs at a speed of 140km/h, the roof contributes more to the sound pressure at the far sound field point. Analyzing the frequency range from 20 to 500 Hz: The top plate plays a very important role in controlling sound pressure, contributing up to 70% of the sound pressure at peak frequencies. (2) When the train is traveling at various speeds, the maximum amplitude of structural vibration and noise generated by the viaduct occurs at 50 Hz. The vibration acceleration of the box beam at the far field point and near field point is mainly concentrated in the frequency range of 31.5-100 Hz, which is consistent with the dominant frequency band of wheel-rail force. Therefore, the main frequency of reducing the vibration and noise of the box beam is 31.5-100 Hz. (3) The vibration energy level and sound pressure level of the box bridge at different speeds are basically the same. The laws of vibration energy and sound pressure follow the rules below: web

• Journal of Korean Ophthalmic Optics Society
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• v.7 no.2
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• pp.209-215
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• 2002

This study investigated the crystal growth, crystalline structure and the basic optical properties of $SnSe/BaF_2$ epilayers. The SnSe epilayer was grown on $BaF_2$(111) insulating substrates using a hot wall epitaxy(HWE) technique. It was found from the analysis of X-ray diffraction patterns that $SnSe/BaF_2$ epilayer was growing to single crystal with orthorhombic structure oriented [111] along the growth direction. Using Rutherford back scattering(RBS), the atomic ratios of the SnSe was found to be stoichiometric, almost 50 : 50. The best values for the full width at half maximum (FWHM) of the DCXRD was 163 arcsec for SnSe epilarer. The epilayer-thickness dependence of the FWHM of the DCXRD shows that the quality of the $SnSe/BaF_2$ is as expected. The dielectric function ${\varepsilon}$(E) of a semiconductor is closely related to its electronic energy band structure and such relation can be drawn from features around the critical points in the optical spectra. The real and imaginary parts(${\varepsilon}_1$ and ${\varepsilon}_2$) of the dielectric function ${\varepsilon}$ of SnSe were measured. These data are analyzed using a theoretical model known as the model dielectric function(MDF). The optical constants related to dielectric function such as the complex refractive index(n*-n+ik), absorption coefficient (${\alpha}$) and normal- incidence reflectivity (R) are also presented for $SnSe/BaF_2$.

• Journal of Korean Ophthalmic Optics Society
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• v.9 no.1
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• pp.35-41
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• 2004

This study investigated the crystal growth, crystalline structure and the basic optical properties of $PbSnSe/BaF_2$ epilayers. The PbSnSe epilayer was grown on $BaF_2$(111) insulating substrates using a hot wall epitaxy (HWE) technique. It was found from the analysis of X-ray diffraction patterns that $PbSnSe/BaF_2$ epilayer was grown single crystal with a rock-salt structure oriented along [111] the growth direction. Using Rutherford back scattering, the atomic ratios of the PbSnSe was found to be proper stoichiometric. The best values for the full width at half maximum (FWHM) of the DCXRD was 162 arcsec for PbSnSe epilayer. The epilayer-thickness dependence of the FWHM of the DCXRD shows that the quality of the $PbSnSe/BaF_2$ is as expected. The dielectric function ${\varepsilon}(E)$ of a semiconductor is closely related to its electronic energy band structure and such relation can be drawn from features around the critical points(CPs) in the optical spectra. The real and imaginary parts(${\varepsilon}1$ and ${\varepsilon}2$) of the dielectric function ${\varepsilon}$ of PbSe were measured, and the observed spectra reveal distinct structures at energies of the E1, E2 and E3 CPs. These data are analyzed using a theoretical model known as the model dielectric function (MDF). The optical constants related to dielectric function such as the complex refractive index ($n^*=n+ik$), absorption coefficient (${\alpha}$) and normal-incidence reflectivity (R) are also presented for $PbSnSe/BaF_2$.

• Journal of the Korean Chemical Society
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• v.40 no.5
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• pp.295-301
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• 1996

A series of solid solutions of the $CaGa_1-xFexO_3-y$ system with the compositions of x=0.25, 0.50, 0.75, and 1.00 has been prepared at $1150^{\circ}C$ under an atmospheric air pressure. The structure, nonstoichiometric chemical formula, and the distribution of cations for the solid solutions are determined by X-ray diffraction analysis, Mohr salt titration, Mossbauer spectroscopic analysis. Their physical properties are discussed with electrical conductivity and magnetic measurements. The crystal system of all the compositions is a brownmillerite orthorhombic system from the X-ray diffraction analysis and the reduced lattice volume increases linearly with x value except that of the composition of x=0.25. All the solid solutions do not contain $Fe^{4+}$ ion and the mole number of oxygen vacancies or y value is 0.50 from Mohr salt analysis. The oxidation state of Fe ion, the coordination state, the structure change in the Brownmillerite-type structure, and the distribution of $Ga^{3+}$ and $Fe^{3+}$ ions are discussed with Mossbauer spectroscopic analysis. The electrical conductivity increases and activation energy decreases, as x value increases. The traditional semiconducting property of this system is described in terms of band theory. The compositions of x=0.50∼1.00 show a thermal magnetic hysteresis in the magnetic measurement with the cooling conditions, which is discussed in terms of the space group and Dzyaloshinsky-Moriya interaction.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.99-99
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• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.327-327
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• 2009

ZnO with a large band gap (~3.37 eV) and exciton binding energy (~60 meV), is suitable for optoelectronic applications such as ultraviolet (UV) light emitting diodes (LEDs) and detectors. However, the ZnO-based p-n homojunction is not readily available because it is difficult to fabricate reproducible p-type ZnO with high hall concentration and mobility. In order to solve this problem, there have been numerous attempts to develop p-n heterojunction LEDs with ZnO as the n-type layer. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducible availability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices. In particular, a number of ZnO films show UV band-edge emission with visible deep-level emission, which is originated from point defects such as oxygen vacancy, oxygen interstitial, zinc interstitial[1]. Thus, defect-related peak positions can be controlled by variation of growth or annealing conditions. In this work, the undoped ZnO film was grown on the p-GaN:Mg film using RF magnetron sputtering method. The undoped ZnO/p-GaN:Mg heterojunctions were annealed in a horizontal tube furnace. The annealing process was performed at $800^{\circ}C$ during 30 to 90 min in air ambient to observe the variation of the defect states in the ZnO film. Photoluminescence measurements were performed in order to confirm the deep-level position of the ZnO film. As a result, the deep-level emission showed orange-red color in the as-deposited film, while the defect-related peak positions of annealed films were shifted to greenish side as increasing annealing time. Furthermore, the electrical resistivity of the ZnO film was decreased after annealing process. The I-V characteristic of the LEDs showed nonlinear and rectifying behavior. The room-temperature electroluminescence (EL) was observed under forward bias. The EL showed a weak white and strong yellowish emission colors (~575 nm) in the undoped ZnO/p-GaN:Mg heterojunctions before and after annealing process, respectively.

• Journal of the Earthquake Engineering Society of Korea
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• v.13 no.1
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• pp.27-34
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• 2009

Site amplification should be considered in order to estimate Soil-Structure Interaction (SSI), seismic source and attenuation parameters with a greater degree of reliability. The horizontal to vertical (H/V) ratio technique, originally proposed by Nakamura (1989), has been applied to analyze the surface waves in microtremor records. Recently, its application has been extended to the shear wave energy of strong motion in order to study the site transfer function. The purpose of this paper is to estimate the H/V spectral ratio using the observed data from 9 seismic stations distributed within the Southern Korean Peninsula, from the Odesan earthquake (2007/01/20). The results show that most of the stations have more stable amplification characteristics in a low frequency band than in a high frequency band. However, each seismic station showed its own characteristic resonant frequency and low and high frequency. The resonant frequency at each station should be estimated carefully, because the quality of seismic data is dependent on the resonant frequency. It can be obtained more reliable results of seismic source and attenuation parameters, if seismic ground motions which deconvolved from site transfer function is used. The site amplification data from this study can be used to generally classify the sites within the Southern Korean Peninsula.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.16-21
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• 2001

Optical properties of $Ag_2CdSnSe_4$ and $Ag_2CdSnSe_4:Co^{+2}$ quaternary semiconductor single crystals grown by the chemical transport reaction method were investigated. The analysis of the X - ray powder diffraction measurements showed that these crystals have a wurtzite structure with lattice constants a = 4.357 $\AA$, c = 7.380 $\AA$, for $Ag_2CdSnSe_4$ and a = 4.885 $\AA$, c = 7.374 $\AA$, for $Ag_2CdSnSe_4:CO^{2+}$. The direct band gap at 298K, obtained from the optical absorption measurement, is found to be 1.21 eV for $Ag_2CdSnSe_4$ and 1.02 eV for $Ag_2CdSnSe_4:CO^{2+}$. The shrinkage of the band gap due to Co-doping is observed and is about 190 meV, We observed four absorption bands of $Co^{2+}$ ions in two near infrared regions of optical absorption spectra of $Ag_2CdSnSe_4$:$Co^{+2}$. These absorption bands were assigned as due to electronic transitions between the split energy levels of $Co^{2+}$ ions in $T_d$ crystal field under spin-orbit interactions.

• Applied Chemistry for Engineering
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• v.21 no.1
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• pp.58-62
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• 2010

CNT-$TiO_{2}$ nano complexes were prepared from $TiOSO_4$ and multi-walled carbon nanotube (MWCNT) by hydrolysis. The CNTs were dispersed uniformly with anatase $TiO_{2}$ in the prepared $TiO_{2}$-CNT complexes. The increasing MWCNT ratio leads to increased crystalline carbon and O/Ti ratio. The decomposition degree of methylene blue was experienced according to UV radiation time for study adsorption and photocatalytic activity. The samples having high MWCNT ratio show high adsorption and photodegradation. The high specific surface area, functional group having oxygen, low band gap energy, high electric conductivity, high volume to surface ratio, uniform structure and properties of MWCNT assist photocatalytic activity of CNT-$TiO_{2}$ complex.