• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.28 no.5
• /
• pp.430-433
• /
• 2017

This paper presents a S/C/X-band LNA MMIC with resistive feedback structure in 0.25 um GaN HEMT process. The GaN devices have advantages as a high output power device having high breakdown voltage, energy band gap and stability at high temperature. Since the receiver using the GaN device with high linearity can be implemented without a limiter, the noise figure of the receiver can be improved and the size of receiver module can be reduced. The proposed GaN LNA MMIC based on 0.25 um GaN HEMT device is achieved the gain of > 15 dB, the noise figure of < 3 dB, the input return loss of > 13 dB, and the output return loss of > 8 dB in the S/C/X-band. The current consumption of GaN LNA MMIC is 70 mA with the drain voltage 20 V and the gate voltage -3 V.

• Journal of Sensor Science and Technology
• /
• v.15 no.6
• /
• pp.397-405
• /
• 2006

Single crystal $AgGaSe_{2}$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_{2}$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_{2}$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}10^{16}/cm^{3}$, $139cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $AgGaSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=1.9501 eV-($8.79{\times}10^{-4}{\;}eV/K)T^{2}$/(T+250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_{2}$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $AgGaSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n=1.

• Journal of Sensor Science and Technology
• /
• v.14 no.3
• /
• pp.160-168
• /
• 2005

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_{2}O_{3}$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_{2}O_{3}$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}1016cm^{-3}$ and $299cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=3.3973 eV-($2.69{\times}10^{-4}$ eV/K)$T^{2}$/(T+463K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{6}$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n = 1.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.234-238
• /
• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62{\times}10^{l6}\;cm^{-3}$ and $296\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.1851\;eV\;-\;(8.99{\times}10^{-4}\;eV/K)T^2/(T+153K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuInSe_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}_{so}$ definitely exists in the $\Gamma_6$ states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.3
• /
• pp.178-183
• /
• 2014

Recently, various type of nanomaterials such as nanorod, nanowire, nanotube and their core/shell nanostructures have attracted much attention in photocatalyst due to their unique properties. Among them, Type-II core/shell heterostructures have extensively studied because it has exhibited improved electrical and optical properties against their single-component nanostructure. Such structures are expected to offer high absorption efficiency and fast charge transport due to their stepwised energetic combination and large internal surface area. Thus, it has been considered as potential candidates for high efficient photocatalytic activity. In this work, we introduce a novel chemical conversion process to synthesize Type-II ZnO/ZnSe core/shell heterostructures. A plausible conversion mechanism to ZnO/ZnSe core/shell heterostructres was proposed based on SEM, XRD, TEM and XPS analysis. The ZnO/ZnSe heterostructures exhibited excellent photocatalytic activity toward the decomposition of RhB dye compared to the ZnO nanorod arrays due to enhanced light absorption and the type-II cascade band structure.

• Transactions on Electrical and Electronic Materials
• /
• v.11 no.5
• /
• pp.206-211
• /
• 2010

Piezoelectric energy harvesting uses piezoelectric, which is able to convert unused mechanical vibration energy to electrical energy, such as with motor and machinery. The piezoelectric energy harvester was constructed with a cantilever made of lead zirconate titanate with a metal plate. The primary material was soft lead zirconium titanate (PZT-5H) due to the large strain availability, acceptable mechanical strength and high piezoelectric constant. This technique's drawback is that the energy efficiency is lower than the other energy harvesting methods, but this study increases the output electric power efficiency by analyzing a finite element method for the structure of the piezoelectric energy harvester. We manufactured two cantilever types as follows: the L-60 and L-33 bimorph piezoelectric energy harvesters. Their resulting energy harvesters were able to obtain high voltage values as follows: 27.4 mV and 40.6 mV. Moreover, these results have a similar band of resonance frequency it comparison to the simulation. Consequently, this study was confirmed with validity. The output electric powers of the L-60 and L-33 types have 3.1 mW/s and 5.8 mW/s with 47 Hz and 148 Hz of resonance frequency and then, the load resistivities were $100k\Omega$ and $10k\Omega$, respectively.

• Journal of the Korean Solar Energy Society
• /
• v.25 no.4
• /
• pp.1-11
• /
• 2005

The stoichiometric mixture of evaporating materials for the $CuInSe_2$ single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuInSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.783\;{\AA}$ and $11.621\;{\AA}$, respectively. To obtain the $CuInSe_2$ single crystal thin film, $CuInSe_2$ mixed crystal was deposited on throughly etched GaAs(100) by the HWE(Hot Wall Epitaxy) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$ respectively. The crystalline structure of $CuInSe_2$ single crystal thin film was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.1851\;eV-(8.99{\times}10^{-4}\;eV/K)T^2/(T+153\;K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $n-CdS/p-CuGaSe_2$ heterojunction solar cells under $80\;mW/cm^2$ illumination were found to be 0.51V, $29.3\;mA/cm^2$, 0.76 and 14.3 %, respectively.

• Journal of the Korean Solar Energy Society
• /
• v.38 no.1
• /
• pp.25-36
• /
• 2018

The stoichiometric mixture of evaporating materials for the $CaAl_2Se_4$: Co single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CaAl_2Se_4$, it was found orthorhomic structure whose lattice constant $a_0$, $b_0$ and $c_0$ were 6.4818, $11.1310{\AA}$ and $11.2443{\AA}$, respectively. To obtain the $CaAl_2Se_4$: Co single crystal thin film, $CaAl_2Se_4$: Co mixed crystal was deposited on throughly etched Si (100) by the HWE (Hot Wall Epitaxy) system. The source and substrate temperature were $600^{\circ}C$ and $440^{\circ}C$ respectively. The crystalline structure of $CaAl_2Se_4$: Co single crystal thin film was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CaAl_2Se_4$: Co obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.8239eV-(4.9823{\times}10^{-3}eV/K)T_2/(T+559K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $p-Si/p-CaAl_2Se_4$: Co heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.42 V, $25.3mA/cm^2$, 0.75 and 9.96%, respectively.

• Journal of the Korean Magnetics Society
• /
• v.19 no.3
• /
• pp.81-84
• /
• 2009

We examine the effect of U term (U = 3 eV) describing the Coulomb interactions between electrons on the results of electronic band structure calculations carried out for bcc Fe bulk, monolayer, and chain. We investigated the properties of the three Fe structures by using the all-electron total-energy full-potential linearized augmented plane wave method. The U term was included in the exchange - correlation functionals constructed on the basis of local density approximation (LDA) and general gradient approximation (GGA). We found that in the case of bcc Fe bulk structure inclusion of the U term leads to the overestimated values of magnetic moment on Fe atom. The values of magnetic moment calculated for Fe in monolayer and chain are in accordance with calculations in which the U term was not included. In general, for each system the calculated values of magnetic moment on Fe sites were larger when the U term was incorporated in the energy functional. In Fe bulk, the value of magnetic moment $2.54{\mu}_B$ for LDA+U larger than $2.25{\mu}_B$ for LDA.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.13 no.3
• /
• pp.122-126
• /
• 2003

In this study, $Zn_{0.86}Mn_{0.14}$Te epilayer of 0.7 $\mu\textrm{m}$-thickness was grown on GaAs(100) substrate by using hot wallepitaxy. GaAs(100) substrate was removed from $Zn_{0.86}Mn_{0.14}$Teepilayer by the selective etching solution. The crystal structure and the lattice constant of only Z $n_{0.86}$ M $n_{0.14}$Te epilayer were investigated to be zincblende and 6.140 $\AA$ from X-ray diffraction pattern, respectively. Mn composition x of $Zn_{1-x}Mn_x$Te epilayer was found to be 0.14 using this lattice constant and Vegard's law. The crystal quality of the epilayer was confirmed to be very good due to 256 arcsec-full-width at half-maximum of the double crystal rocking curve. The absorption spectra from the transmission ones were obtained to measure the band gap energy of $Zn_{0.86}Mn_{0.14}$Te epilayer from 300 K to 10 K. With the decreasing temperature,. strong absorption regions in the absorption spectra were shifted to higher energy side and the absorption peak meaning the free exciton formation appeared near the absorption edge. The band gap energy values of $Zn_{0.86}Mn_{0.14}$Te epilayer at 0 K and 300 K were found to be almost 2.4947 eV and 2.330 eV from the temperature dependence of the free exciton peak position energy of $Zn_{0.86}Mn_{0.14}$Te epilayer, respectively. The free exciton peak position energy of $Zn_{0.86}Mn_{0.14}$Te epilayer without GaAs substrate was larger 15.4 meV than photoluminescence peak position energy at 10 K. This energy difference between two peaks was analysed to be Stokes shift.