• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.66-66
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• 2009

The photoconductive $CdGa_2Se_4$ layer was grown through the hot wall epitaxy method. From the photocurrent (PC) measurements, the three peaks in the PC spectra were associated with the band-to-band transitions. The PC intensities were observed to decrease with decreasing temperature. The valence-band splitting on $CdGa_2Se_4$ was also observed by means of the PC spectroscopy. The crystal field splitting and the spin orbit splitting turned out to be 0.1604 and 0.4179 eV at 10 K, respectively.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.4
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• pp.402-406
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• 1988

The MgGa2Se4 single crystal for study of optical properties is for the first time grown by Bridgmna method. The crystal structure of grown MgGa2Se4 single crystal has the Rhomobohedral structure (R3m) and its lattice constant are a=3.950\ulcorner c=38.893\ulcornerin Hexagonal structure. The energy band structure of grown MgGa2Se4 single crystal structure has direct band gap and the optical energy gap measured from optical absorption in this crystal is 2.20eV at 290K. The temperature dependence of energy gap was given Eg(T)=Eg(O)-aT\ulcorner)B+T), from varshni equation, where Eg(O)=2.34eV, a=8.79x10**-4eV/and b=250K.

• Journal of the Korean Ceramic Society
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• v.33 no.12
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• pp.1353-1364
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• 1996

Recently semiconductor doped glasses have attracted attention as nonlinear optical materials because of their large third order nonlinear optical properties. The transparent and homogeneous CdS-doped SiO2 glass thin films were obtained by the dip=coating process of the sol-gel method. Thin films were consisted of glasses containing CdS microcrystallites which were formed by dissolved Cd2+ and S2- ions in a SiO2 matrix solutions. A subsequent thermal treatment of this samples led the formation of colloidal agglomerates and finally of microcrystallites. The size of CdS microcrystallites was about 4 to 15 nm after thermal treatments at various heating conditions. From the optical absorption spectra of the CdS-doped SiO2 glass films it was found that the absorption edge was blue-shifted compared with that of the bulk CdS crystal(~2, 4 eV) and that the amount of energy shift was inversely proportional to the crystal size. And the band gap energy increased with the decrease in crystallite size indicating that the quantum size effects occured.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.556-562
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• 1996

Carbon nitride (CN) films were synthesized on silicon substrates by a combined ion-beam and laser-ablation method under various conditions; ion-beam energy and ion-beam current were varied. Raman spectroscopy and spectroscopic ellipsometry (SE) were employed to characterize respectively the structural and the optical properties of the CN films. Raman spectra show that all the CN films are amorphous independent of the ion-beam current and the ion-beam energy. Refractive indices, extinction coefficients and optical band gaps which were determined from the measured SE spectra exhibit a significant dependence on the synthesis conditions. Especially, the decrease of the refractive indices and the shrinkage of the optical band gap is noticeable as the ion-beam current and/or the ion-beam energy increase.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.170-173
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• 2006

[ $CuInS_2$ ] filims were appeared from 0.84 to 1.27 of Cu/In composition ratio and sulfur composition ratios of $CuInS_2$ thin films fabricated, Also when Cu/In composition ratio was 1.03, $CuInS_2$ thin film with chalcopyrite structure had the highest XRD peak (112). And lattice constant (a) of and grain size of the film tin s ambient were appeared a little larger than those in only Vacuum The films in S ambient were p-type with resistive of around $10^{-1}{\Omega}cm$ and optical energy band gaps of the films in S ambient were appeared a little larger than those in only Vacuum. Analysis of the optical energy band gap of $CuInS_2$ thin films a value of 1.53eV.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.73-76
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• 2005

To widen the band gap of ZnO, we have investigated $Zn_{1-x}Mg_xO(ZMO)$ thin films prepared by pulsed laser deposition on c-plane sapphire substrates at $500^{\circ}C$. From X-ray diffraction patterns, ZMO films show only the (0002) and (0004) diffraction peaks. It means that the flints have the wurtzite structure. Segregation of ZnO and MgO phases is found in the films with x=0.59. All the samples are highly transparent in the visible region and have a sharp absorption edge in the UV region. The shift of absorption edge to higher energy is observed in the films with higher Mg composition. The excitonic nature of the films is clearly appeared in the spectra for all alloy compositions. The optical band-gap ($E_g$) of ZMO films is obtained from the ${\alpha}^2$ vs Photon energy plot assuming ${\alpha}^2\;\propto$ (hv - $E_g$), where u is the absorption coefficient and hv is the photon energy. The value of $E_g$ increases up to 3.72 eV for the films with x=0.35. It is important to adjust Mg composition control for controlling the band-gap of ZMO films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.121-122
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• 2007

Single crystal $CuAlSe_2$ layers were grown on thoroughly etched sem-insulating GaAs(l00) substrate at $410^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}l0^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;155\;K)$.

• Nuclear Engineering and Technology
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• v.42 no.6
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• pp.690-703
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• 2010

Sampling based uncertainty analysis was carried out to quantify uncertainty in predictions of best estimate code RELAP5/MOD3.2 for a thermal hydraulic test (10% hot leg break LOCA) performed in the Large Scale Test Facility (LSTF) as a part of an IAEA coordinated research project. The nodalisation of the test facility was qualified for both steady state and transient level by systematically applying the procedures led by uncertainty methodology based on accuracy extrapolation (UMAE); uncertainty analysis was carried out using the Latin hypercube sampling (LHS) method to evaluate uncertainty for ten input parameters. Sixteen output parameters were selected for uncertainty evaluation and uncertainty band between $5^{th}$ and $95^{th}$ percentile of the output parameters were evaluated. It was observed that the uncertainty band for the primary pressure during two phase blowdown is larger than that of the remaining period. Similarly, a larger uncertainty band is observed relating to accumulator injection flow during reflood phase. Importance analysis was also carried out and standard rank regression coefficients were computed to quantify the effect of each individual input parameter on output parameters. It was observed that the break discharge coefficient is the most important uncertain parameter relating to the prediction of all the primary side parameters and that the steam generator (SG) relief pressure setting is the most important parameter in predicting the SG secondary pressure.

• Korean Journal of Remote Sensing
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• v.2 no.2
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• pp.79-94
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• 1986

TM data, which have better resolution in spatial and spectral than MSS data, were used for this study, and several Image Processing Techniques (IPT) were examined for finding the best IPT to fit to lineament extraction and mineralized zone mapping. The Ryeongnam area was selected as test area, because the area is one of major mineralized zones in Korea and its hydrothermal alteration zone is wider and deeper than other areas. The spatial filtering method is most optimum one for limeament extraction: that is, the directional spatial filtering is most efficient to detect N-S, E-W direction lineaments on the image, and the high boost filtering can be applied for mapping all direction lineaments. The ratio method was selected for detecting altered zone. It is possible to make several tens combinations in ratio with 7 bands of TM data, but considering spectral characteristics of each band of TM to the geological meterials and vegetation, the band 4/band 3(A), band 5/band 7(B), and B/A ratio methods were chosen among them. The 5/7 ratio image did not show clearly the altered area due to noise from vegetation cover, so the 4/3 ratio imae was used for trying to decrease the effect of vegetation. As a result the B/A ratio image showed quite nicely the altered zone of the test area. In conclusion, the spatial filtering is the best image processing techniques for lineament mapping, and the B/A ratio image in TM data is useful for the mineralized zone mapping.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.144-145
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• 2009

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the poly crystal source of $CdGa_2Se_4$ at $630\;^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27\;\times\;10^{17}\;cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 2.6400 eV - ($7.721\;{\times}\;10^{-4}\;eV/K)T^2$/(T + 399 K). Using the photocurrent spectra and the Hopfield quasi cubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) for the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_{11}$-exciton peaks.