• Korean Journal of Materials Research
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• v.12 no.11
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• pp.875-879
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• 2002

$Pb_{1-x}$ $Cd_{x}$ $I_2$ (x=0.0, 0.2, 0.5, 0.7, 0.9, 1.0) single crystals were grown by using Bridgman method and their structural and optical properties were investigated from the measurement of X-ray diffraction, optical absorption and photoluminescence. As-grown single crystals have hexagonal closed packed layered structure. The values of lattice constant c decrease with increasing composition x. Direct and indirect transition optical energy band gaps are calculated from optical absorption spectra measured at room temperature. They increase exponentially from 2.3eV to 3.2 eV with increasing composition x. The energies of photoluminescence peak due to donor bound exciton measured at 6K increase with increasing composition . However, the peak energies of donor-acceptor pair (DAP) are independent of the optical energy band gaps of $Pb_{1-x}$/$Cd_{x}$ $I_2$ single crystals.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.2
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• pp.339-345
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• 1994

A new filter-bank is proposed in order to track center frequency of narrow band signal. The two banks are connected in series-parallel. The master filter bank which is made of traditional filter bank detects the center frequency roughly. And the performance for tracking center frequency is greatly improved by the slave filter bank which is based on energy-difference estimator. Computer simulations show that it achieves a good tracking accuracy.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.575-578
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• 1995

X-ray magnetic-circular-dichroism (MCD) spectra, orbital ($$) and spin magnetic moments ($$) for Co(110) monolayers a free standing mode or sandwiched between Pd(Pd/1Co/Pd)and Cu layers (Cu/1Co/Cu) are calculated using the thin film full potential linearized augmented plane wave energy band method. In contrast to the double peak structure predicted for the Co(0001) surface, only a minor side peak is found in the MCD spectra for Cu/Co/Cu, while MCD spectra for the other systems show a single peak structure. The MCD sum rules originally derived from a single ion model are found in the band approach to be valid for the systems investigated. However, for the spin sum rule, the magnetic dipole term ($$) is not negligible and needs to be included.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.3
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• pp.445-452
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• 1987

In this paper, a model for characteristics in the AlxGa1-xAs layer of MODFET's is presented. The characteristics of conduction band in the AlxGa1-xAs layer is analyzed with the Fermi-Dirac statistics. And using the conduction band energy which is calculated with the numerical calculation method (false-Positon method), the variations of the electric-field distribution, the ionized donor concentration, and the two-dimensional electron gas density with gate voltage are calculated, respectively. The channel formation process for the parasitic MESFET operation in the MOD structure is also analyzed, and the characteristics in the AlxGa1-xAs layer is analytically modeled. The throretical results describe well the general characteristics in the MOD structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.82-82
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• 2012

Angle-resolved photoemission spectroscopy (ARPES) is a powerful tool to investigate the electronic structure of a single-crystalline solid. After the development of a two-dimensional electron detector, it became a basic experimental method in solid state physics comparable to other powerful tools such as x-ray and neutron scatterings. In this tutorial, I talk briefly on the basic principle of ARPES and its recent and future direction of development.

• Bulletin of the Korean Chemical Society
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• v.30 no.2
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• pp.402-404
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• 2009

The band structures and the densities of states at the Fermi energy for rutile, anatase and brookite phases are investigated along with the structure-photocatlaytic relationship by using DFT method. Bands are less dispersive in anatase phase than in rutile phase, and they are almost flat in brookite phase. As a result, the DOS value near the Fermi energy for brookite is highest among three types of $TiO_{2}$, which means that the numbers of electrons near the Fermi energy are largest in brookite. The calculation shows that brookite phase may exhibit highest photocatalytic efficiency among three types of $TiO_{2}$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.267-275
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• 2015

In this paper, ZnO films were prepared by atomic layer deposition (ALD) and CdS films were deposited using chemical bath deposition (CBD) to form ZnO/CdS heterojunction. More accurate mapping of band arrangement of the ZnO/CdS heterojunction has been performed by analyzing its electrical and optical characteristics in depth by various methods including transmittance, x-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS). The optical bandgap energies ($E_g$) of ZnO and CdS were 3.27 eV and 2.34 eV, respectively. UPS was capable of extracting the ionization potential energies (IPEs) of the materials, which turned out to be 8.69 eV and 7.30 eV, respectively. The electron affinity (EA) values of ZnO and CdS calculated from IPE and $E_g$ were 5.42 eV and 4.96 eV, respectively. Energy-band structures of the heterojunction could be accurately drawn from these parameters taking the conduction band offset (CBO) into account, which will substantially help acquisition of the full band structures of the thin films in the CIGS solar-cell device and contribute to the optimal device designs.

• Composites Research
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• v.35 no.6
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• pp.469-476
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• 2022

In this paper, the microwave absorbing characteristics after the impact of the radar-absorbing structure (RAS) consisting of periodic pattern sheet (PPS) and glass fiber-reinforced plastic (GFRP) were experimentally investigated. The fabricated RAS effectively absorbed the microwave in the X-band (8.2-12.4 GHz). In order to induce the damage to the RAS, a low-velocity impact test with various impact energy of 15, 40, and 60 J was conducted. Afterward, the impact damage was observed by using visual inspection, non-destructive test, and image processing method. Moreover, the absorbing performance of intact and damaged RAS was measured by the free-space measurement system. The experiment results revealed that the delamination damage from the impact energy of 15 J did not considerably affect the microwave absorbing performance of the RAS. However, fiber breakage and penetration damage with a relatively large damaged area were occuured when the impact energy was increased up to 40 J and 60 J, and these failures significantly degraded the microwave absorbing characteristics of the RAS.

• Nuclear Engineering and Technology
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• v.54 no.12
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• pp.4625-4635
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• 2022

A low-energy dielectric loaded accelerator with a non-uniform, multi-segment structure is studied and optimized. So far, no analytical solution is provided for such structures. Also, due to the existing nonlinear behavior and a large number of geometric parameters, the problem of numerical optimizations is complex. For this reason, a method is presented to design and optimize such structures using the Genetic Algorithm (GA). Moreover, the GA output results are compared with Trust Region (TR) and Nelder-Mead Simplex (NMS) methods. Comparative results show that the GA is more efficient in achieving optimization goals and also has a higher speed than the two other methods. Finally, an optimized accelerating tube is integrated into a proper coupler. Then, the accelerator is simulated for full electromagnetic investigations using the CST suite of codes. This design leads to a structure with a power of about 80 kW in the X-band, which delivers electrons to the output energy in the range of 300-459 kV. The length and outer diameter of the accelerating tube obtained are 10 cm and 1 cm, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.1-6
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• 2011

Optical gain characteristics of $1.3{\mu}m$ type-II GaAsSb/InGaNAs/GaAs trilayer quantum well structures were studied using multi-band effective mass theory. The results were compared with those of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structures. In the case of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure, the energy difference between the first two subbands in the valence band is smaller than that of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. Also, $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure shows larger optical gain than $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. This means that GaAsSb/InGaNAs/GaAs system is promising as long-wavelength optoelectronic devices for optical communication.