• Title/Summary/Keyword: Energy Absorption

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Exclusion of Na+ and ClIons by the central parenchyma in leaf sheaths of rice and the involvement of lamina joint

  • Neang, Sarin;Kano-Nakata, Mana;Yamauchi, Akira;Itani, Tomio;Maekawa, Masahiko;Mitsuya, Shiro
    • Proceedings of the Korean Society of Crop Science Conference
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    • 2017.06a
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    • pp.237-237
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    • 2017
  • Rice is highly sensitive to salt stress especially in its early growth stage, which thus is one of the major constraints in rice production. In rice plants, salt sensitivity is associated with the accumulation of $Na^+$ in the shoots, especially in the photosynthetic tissues. High salt concentrations in soil cause high $Na^+$ and $Cl^-$ transport to the shoot and preferential accumulation of those ions in older leaves, which decreases $K^+$ in the shoot, photosynthetic activity and grain yield. Salt exclusion capacity at the leaf sheath is therefore considered to be one of the main mechanisms of salt tolerance. In addition, it is suspected that the lamina joint might be involved in the salt transport from leaf sheath to leaf blade. This research aims to determine if leaf sheaths of rice exclude a large amount of $Na^+$ only or other ions such as $K^+$, $Ca^{2+}$, $Mg^{2+}$, and $Cl^-$ as well, to identify tissues in the leaf sheath, which accumulate $Na^+$, and to examine if the lamina joint is involved in the salt exclusion by the leaf sheath. The rice seedlings of salt tolerant genotype FL478 and salt sensitive genotype IR29 were independently treated with NaCl, KCl, $MgCl_2$ and $CaCl_2$, and Taichung 65 and its near-isogenic liguleless line (T65lg) were treated with NaCl. Then, the content of $Na^+$, $K^+$, $Ca^{2+}$, $Mg^{2+}$, and $Cl^-$ ions and their specific location were determined using Atomic Absorption Spectrometer, Ion Chromatograph, and Energy Dispersive X-ray Spectroscopy. Results showed that leaf sheaths of FL478 and IR29 accumulated a large amount of $Na^+$, $K^+$, $Ca^{2+}$, $Mg^{2+}$, and $Cl^-$ ons, and thus excluded them from leaf blades when treated with high concentration of each salt. When treated with NaCl, the highest $Na^+$ concentration was found in the basal part of leaf sheaths of both cultivars. Moreover, energy-dispersive X-ray spectroscopy revealed that the central parenchyma cells of the leaf sheath were the site where most Na, Cl, and K were retained under salinity in the salt tolerant genotype FL478. Also, the concentration of $Na^+$, $K^+$ and $Cl^-$ ions in leaf sheaths and leaf blades was comparable between T65 and T65lg, indicating that the lamina joint may not be involved in the exclusion of $Na^+$, $Cl^-$ and $K^+$ by the leaf sheath from the leaf blade under salinity. Therefore, we conclude that the central parenchyma cells of basal part of leaf sheath are the site that plays a physiological role to exclude $Na^+$ in the shoots of rice without the involvement of the lamina joint.

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Effect of Thermal Annealing for MgGa2Se4 Single Crystal Thin Film Grown by Hot Wall Epitaxy (뜨거운 곁쌓기 법에 의해 성장된 MgGa2Se4 단결정 박막의 열처리 효과)

  • Bang, Jinju;Kim, Hyejeong;Park, Hwangseuk;Kang, Jongwuk;Hong, Kwangjoon
    • Journal of Sensor Science and Technology
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    • v.23 no.1
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    • pp.51-57
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    • 2014
  • The evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ compounded polycrystal powder was deposited on thoroughly etched semi-insulated GaAs(100) substrate by the hot wall epitaxy (HWE) method system. The source and substrate temperatures of optimized growth conditions, were $610^{\circ}C$ and $400^{\circ}C$, respectively.The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34\;eV-(8.81{\times}10^{-4}\;eV/K)T^2/(T+251\;K)$. After the as-grown $MgGa_2Se_4$ single crystal thin films was annealed in Mg-, Se-, and Ga-atmospheres, the origin of point defects of $MgGa_2Se_4$ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Mg}$, $V_{Se}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted $MgGa_2Se_4$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $MgGa_2Se_4$/GaAs did not form the native defects because Ga in $MgGa_2Se_4$ single crystal thin films existed in the form of stable bonds.

Mobi-kids: A Case-control Study Protocol on Electromagnetic Field Radiation Exposure from Telecommunication and Brain Tumors in Children and Adolescents (모비키즈: 통신전자파 노출과 어린이청소년의 뇌종양에 관한 환자 -대조군 연구 프로토콜)

  • Choi, Kyung-Hwa;Kim, Dong-Seok;Lee, Jung-il;Ra, Young-Shin;Phi, Ji Hoon;Ahn, Young Hwan;Kwon, Jong Hwa;Lee, Ae-Kyoung;Choi, Hyung-Do;Ha, Mina
    • Journal of Environmental Health Sciences
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    • v.41 no.3
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    • pp.182-190
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    • 2015
  • Objectives: To introduce a protocol of Mobi-kids study which was aimed to examine an association between radiofrequency (RF) radiation exposure by mobile phone use and brain tumor risk in children and adolescents. Methods: The Mobi-kids study was a multinational matched case control study using a standardized protocol with the number of subjects targeted about 1,000 cases and 2,000 controls aged 10 to 24. In Mobi-Kids Korea, the source population was restricted to Seoul, Incheon, and Gyeonggi-do province. Eligible cases of primary brain tumor (glioma, meningioma, and others) were diagnosed from January 2012 to June 2015. Eligible controls were appendicitis patients operated during the study period. Two controls were matched on age, gender, and study region for 1 case. Information about pattern and history of mobile phone use and other covariates were obtained by face to face interview by trained interviewer. The Mobi-kids study has been involved in Mobi-expo as a validation study about mobile phone use, XGridmaster to localize tumor in the brain for RF energy calculation, and histological review for validation of diagnosis. Results: The Mobi-kids was the first and largest study in children and adolescents to estimate risk of brain tumor in association with the RF energy absorption in the brain estimated by mobile phone use. Forty-six-cases and 54 controls were collected as of September 2014 in Korea. Conclusions: The meaningful results of the study were expected because of the largest sample size, high validity of EMF exposure assessment as well as the susceptible study populationof children and adolescents.

A Study on the Electron Transfer at the Alq3/Ba and Alq3/Au Interfaces by NEXAFS Spectroscopy (NEXAFS 분광법에 의한 Alq3/Ba과 Alq3/Au의 계면에서의 전자 천이에 관한 연구)

  • Lim, Su-Yong;Ju, Sung-Hoo;Yang, Jae-Woong
    • Journal of the Korean institute of surface engineering
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    • v.45 no.1
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    • pp.15-19
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    • 2012
  • Tris(8-quinolinolato)aluminum(III); $Alq_3$ has been frequently used as an electron transporting layer in organic light-emitting diodes. Either Ba with a low work function or Au with a high work function was deposited on $Alq_3$ layer in vacuum. And then, the behaviors of electron transition at the $Alq_3$/Ba and $Alq_3$/Au interfaces were investigated by using the near edge x-ray absorption fine structure (NEXAFS) spectroscopy. In the each interface, the energy levels of unoccupied obitals were assigned as ${\pi}^*$(LUMO, LUMO+1, LUMO+2 and LUMO+3) and ${\sigma}^*$. And the relative intensities of these peaks were investigated. In an oxygen atom composing $Alq_3$ molecule, the relative intensities for a transition from K-edge to LUMO+2 were largely increased as Ba coverage (${\Theta}_{Ba}$, 2.7 eV) with a low work function was in-situ sequentially increased on $Alq_3$ layer. In contrast, the relative intensities for the LUMO+2 peak were reduced as Au coverage (${\Theta}_{Au}$, 5.1 eV) with a high work function were increased on $Alq_3$ layer. This means that the electron transition by photon in oxygen atom which consists in the unoccupied orbitals in $Alq_3$ molecule, largely depends on work function of a metal. Meanwhile, in the case of electron transition in a carbon atom, as ${\Theta}_{Ba}$ was increased on $Alq_3$, the relative intensity from K-edge to ${\pi}_1{^*}$ (LUMO and LUMO+1) was slightly decreased, and from K-edge to ${\pi}_2{^*}$ (LUMO+2 and LUMO+3) was somewhat increased. This rising of the energy state from ${\pi}_1{^*}$ to ${\pi}_2{^*}$ exhibits that electrons provided by Ba would contribute to the process of electron transition in the $Alq_3$/Ba interfaces. As shown in above observation, the analyses of NEXAFS spectra in each interface could be important as a basic data to understand the process of electron transition by photon in pure organic materials.

Analysis of Weathered State on a Halo Stone Buddha, Unju Temple of Hwasun, Korea Using Low Frequency Flaw Detector (저주파 결함 탐지기를 활용한 화순 운주사 광배석불의 풍화상태 분석)

  • Kang, Seong-Seung;Ko, Chin-Surk;Kim, Cheong-Bin;Jang, Bo-An
    • The Journal of Engineering Geology
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    • v.23 no.3
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    • pp.235-246
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    • 2013
  • P-wave velocity was measured by the low frequency flaw detector in order to analyze the weathered state of a halo stone Buddha, Unju temple, Hwasun, Korea. By the results of laboratory tests on a fresh acidic tuff with the same rock of a halo stone Buddha, average absorption, average P-wave velocity, and average uniaxial compressive strength were 5.38%, 4,008 m/s, and 70.1 MPa, respectively. The results correspond to moderately strong rock. Average P-wave velocity of a halo stone Buddha measured by the low frequency flaw detector was 2,257 m/s in the left zone, 3,437 m/s in the right zone, and 2,802 m/s overall. Weathering index of a halo stone Buddha was 0.45 in the left zone, 0.21 in the right zone, and 0.33 overall. Comparing the results of a halo stone Buddha with them of laboratory tests, weathered state of a halo stone Buddha was analyzed highly weathered state in the left zone and moderately weathered state in the right zone. Furthermore, it suggests that the left zone of a halo stone Buddha was affected weathering more than the right one. Overall a halo stone Buddha corresponds to moderately weathered state of weathering degrees. In conclusion, it is considered that low frequency flaw detector may be applicable as a valuable method on analyzing the P-wave velocity of the stone cultural heritage with an irregular surface.

Optical Properties of Photoferroelectric Semiconductors III.(Optical Properties of $SbS_{1-x}Se_xI,\;BiS_{1-x}Se_xI,\;Sb_{1-x}Bi_xSI,\;Sb_{1-x}Bi_xSeI,\;SbS_{1-x}Se_xI:Co,\;BiS_{1-x}Se_xI:Co,\;Sb_{1-x}Bi_xSI:Co\;and\;Sb_{1-x}Bi_xSeI:Co$ Single Crystals) (Photoferroelectric 반도체의 광학적 특성 연구 III.($SbS_{1-x}Se_xI,\;BiS_{1-x}Se_xI,\;Sb_{1-x}Bi_xSI,\;Sb_{1-x}Bi_xSeI,\;SbS_{1-x}Se_xI:Co,\;BiS_{1-x}Se_xI:Co,\;Sb_{1-x}Bi_xSI:Co$, 및 $Sb_{1-x}Bi_xSeI:Co$ 단결정의 광학적 특성에 관한 연구))

  • Hyun, Seung-Cheol;Oh, Seok-Kyun;Yun, Sang-Hyun;Kim, Wha-Tek;Kim, Hyung-Gon;Choe, Sung-Hyu;Kim, Chang-Dae;Yoon, Chang-Sun;Kwun, Sook-Il
    • Journal of the Korean Vacuum Society
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    • v.2 no.2
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    • pp.227-235
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    • 1993
  • $SbS_{1-x}Se_xI,\;BiS_{1-x}Se_xI,\;Sb_{1-x}Bi_xSI,\;Sb_{1-x}Bi_xSeI,\;SbS_{1-x}Se_xI:Co,\;BiS_{1-x}Se_xI:Co,\;Sb_{1-x}Bi_xSI:Co$, and $Sb_{1-x}Bi_xSeI:Co$ single crystals were grown by the vertical Bridgman method using the ingots. It has been found that these single crystals have an orthorhombic structure and indirect optical transition. The composition dependences of energy gaps are given by $E_g(x)=E_g(0)-Ax+Bx^2$. The impurity optical absorption peaks due to cobalt deped with impurity are attributed to the electron transitions between the split energy levels of $Co^{2+}$ and $Co^{3+}$ ions sited at $T_d$symmetry of the host lattice.

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Membrane-based Direct Air Capture Technologies (분리막을 이용한 공기 중 이산화탄소 제거 기술)

  • Yoo, Seung Yeon;Park, Ho Bum
    • Membrane Journal
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    • v.30 no.3
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    • pp.173-180
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    • 2020
  • As the demand for fossil fuels continues to increase worldwide, carbon dioxide (CO2) concentration in the air has increased over the centuries. The way to reduce CO2 emissions to the atmosphere, carbon capture and sequestration (CCS) technology have been developed that can be applied to power plants and factories, which are primary emission sources. According to the climate change mitigation policy, direct air capture (DAC) in air, referred to as "negative emission" technology, has a low CO2 concentration of 0.04%, so it is focused on adsorbent research, unlike conventional CCS technology. In the DAC field, chemical adsorbents using CO2 absorption, solid absorbents, amine-functionalized materials, and ion exchange resins have been studied. Since the absorbent-based technology requires a high-temperature heat treatment process according to the absorbent regeneration, the membrane-based CO2 capture system has a great potential Membrane-based system is also expected for indoor CO2 ventilation systems and immediate CO2 supply to smart farming systems. CO2 capture efficiency should be improved through efficient process design and material performance improvement.

Development of Kesterite Cu2ZnSn(S1-x,Sex)4 (CZTSS)-Based Thin Film Solar Cells with In and Ga Free Absorber Materials (In과 Ga가 미포함 된 Kesterite Cu2ZnSn(S1-x,Sex)4 (CZTSS) 박막형 태양전지 개발 현황)

  • Shin, Seung-Wook;Han, Jun-Hee;Gang, Myeng-Gil;Yun, Jae-Ho;Lee, Jeong-Yong;Kim, Jin-Hyeok
    • Korean Journal of Materials Research
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    • v.22 no.5
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    • pp.259-273
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    • 2012
  • Chalcogenide-based semiconductors, such as $CuInSe_2$, $CuGaSe_2$, Cu(In,Ga)$Se_2$ (CIGS), and CdTe have attracted considerable interest as efficient materials in thin film solar cells (TFSCs). Currently, CIGS and CdTe TFSCs have demonstrated the highest power conversion efficiency (PCE) of over 11% in module production. However, commercialized CIGS and CdTe TFSCs have some limitations due to the scarcity of In, Ga, and Te and the environmental issues associated with Cd and Se. Recently, kesterite CZTS, which is one of the In- and Ga- free absorber materials, has been attracted considerable attention as a new candidate for use as an absorber material in thin film solar cells. The CZTS-based absorber material has outstanding characteristics such as band gap energy of 1.0 eV to 1.5 eV, high absorption coefficient on the order of $10^4cm^{-1}$, and high theoretical conversion efficiency of 32.2% in thin film solar cells. Despite these promising characteristics, research into CZTS-based thin film solar cells is still incomprehensive and related reports are quite few compared to those for CIGS thin film solar cells, which show high efficiency of over 20%. The recent development of kesterite-based CZTS thin film solar cells is summarized in this work. The new challenges for enhanced performance in CZTS thin films are examined and prospective issues are addressed as well.

Microstructure Evaluation and Wear Resistance Property of Al-Si-X/Al2O3 Composite by the Displacement Reaction in Al-Mg Alloy Melt using High Energy Mechanical Milled Al-SiO2-X Composite Powder (HEMM Al-SiO2-X 복합 분말을 Al-Mg 용탕에서 자발 치환반응으로 제조된 Al-Si-X/Al2O3 복합재료의 조직 및 마멸 특성)

  • Woo, Kee-Do;Kim, Dong-Keon;Lee, Hyun-Bom;Moon, Min-Seok;Ki, Woong;Kwon, Eui-Pyo
    • Korean Journal of Materials Research
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    • v.18 no.6
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    • pp.339-346
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    • 2008
  • Single-crystal $ZnIn_2S_4$ layers were grown on a thoroughly etched semi-insulating GaAs (100) substrate at $450^{\circ}C$ with a hot wall epitaxy (HWE) system by evaporating a $ZnIn_2S_4$ source at $610^{\circ}C$. The crystalline structures of the single-crystal thin films were investigated via the photoluminescence (PL) and Double-crystal X-ray rocking curve (DCRC). The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by Varshni's relationship, $E_g(T)=2.9514\;eV-(7.24{\times}10^{-4}\;eV/K)T2/(T+489K)$. After the as-grown $ZnIn_2S_4$ single-crystal thin films was annealed in Zn-, S-, and In-atmospheres, the origin-of-point defects of the $ZnIn_2S_4$ single-crystal thin films were investigated via the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_S$, $Zn_{int}$, and $S_{int}$ obtained from the PL measurements were classified as donor or acceptor types. Additionally, it was concluded that a heat treatment in an S-atmosphere converted $ZnIn_2S_4$ single crystal thin films into optical p-type films. Moreover, it was confirmed that In in $ZnIn_2S_4$/GaAs did not form a native defects, as In in $ZnIn_2S_4$ single-crystal thin films existed in the form of stable bonds.

Synthesis and Photovoltaic Properties of Alternating Conjugated Polymers Derived from Thiophene-Benzothiadiazole Block and Fluorene/Indenofluorene Units

  • Li, Jianfeng;Tong, Junfeng;Zhang, Peng;Yang, Chunyan;Chen, Dejia;Zhu, Yuancheng;Xia, Yangjun;Fan, Duowang
    • Bulletin of the Korean Chemical Society
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    • v.35 no.2
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    • pp.505-512
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    • 2014
  • A new donor-accepter-donor-accepter-donor (D-A-D-A-D) type 2,1,3-benzothiadiazole-thiophene-based acceptor unit 2,5-di(4-(5-bromo-4-octylthiophen-2-yl)-2,1,3-benzothiadiazol-7-yl)thiophene ($DTBTTBr_2$) was synthesized. Copolymerized with fluorene and indeno[1,2-b]fluorene electron-rich moieties, two alternating narrow band gap (NBG) copolymers PF-DTBTT and PIF-DTBTT were prepared. And two copolymers exhibit broad and strong absorption in the range of 300-700 nm with optical band gap of about 1.75 eV. The highest occupied molecular orbital (HOMO) energy levels vary between -5.43 and -5.52 eV and the lowest unoccupied molecular orbital (LUMO) energy levels range from -3.64 to -3.77 eV. Potential applications of the copolymers as electron donor material and $PC_{71}BM$ ([6,6]-phenyl-$C_{71}$ butyric acid methyl ester) as electron acceptors were investigated for photovoltaic solar cells (PSCs). Photovoltaic performances based on the blend of PF-DTBTT/$PC_{71}BM$ (w:w; 1:2) and PIF-DTBTT/$PC_{71}BM$ (w:w; 1:2) with devices configuration as ITO/PEDOT: PSS/blend/Ca/Al, show an incident photon-to-current conversion efficiency (IPCE) of 2.34% and 2.56% with the open circuit voltage ($V_{oc}$) of 0.87 V and 0.90 V, short circuit current density ($J_{sc}$) of $6.02mA/cm^2$ and $6.12mA/cm^2$ under an AM1.5 simulator ($100mA/cm^2$). The photocurrent responses exhibit the onset wavelength extending up to 720 nm. These results indicate that the resulted narrow band gap copolymers are viable electron donor materials for polymer solar cells.