• Title/Summary/Keyword: Emitters

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GHG-AP Integrated Emission Inventories and Per Unit Emission in Biomass Burning Sector of Seoul (서울시 생물성 연소부문 온실가스-대기오염 통합 인벤토리 및 배출원단위분석)

  • Jung, Jaehyung;Kwon, O-Yul
    • Journal of Korean Society for Atmospheric Environment
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    • v.31 no.1
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    • pp.83-91
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    • 2015
  • Biomass burning is known to be one of the main sectors emitting greenhouse gases as well as air pollutants. Unfortunately, the inventory of biomass burning sector has not been established well. We estimated greenhouse gas (GHG) and air pollution (AP) integrated emissions from biomass burning sector in Seoul during year 2010. The data of GHG and AP emissions from biomass burning, classified into open burning, residential fireplace and wood stove, meat cooking, fires, and cremation, were obtained from Statistics Korea and Seoul City. Estimation methodologies and emission factors were gathered from reports and published literatures. Estimated GHG and AP integrated emissions during year 2010 were $3,867tonCO_{2eq}$, and 2,320 tonAP, respectively. Major sources of GHG were forest fires ($1,533tonCO_{2eq}$) and waste open burning ($1,466tonCO_{2eq}$), while those of AP were meat cooking (1,240 tonAP) and fire incidence (907 tonAP). Total emissions by administrative district in Seoul, representing similar patterns in both GHG and AP, indicated that Seocho-gu and Gangseo-gu were the largest emitters whereas Jung-gu was the smallest emitter, ranged in $2{\sim}165tonCO_{2eq}$ and 0.1~8.31 tonAP. GHG emissions per $km^2$ showed different results from total emissions in that Gwanak-gu, Jungnang-gu, Gangdong-gu and Seodaemun-gu were the largest emitters, while Seocho-gu and Gangseo-gu were near-averaged emission districts, ranged in $0.2{\sim}21tonCO_{2eq}/km^2$. However, AP emissions per $km^2$ revealed relatively minor differences among districts, ranged in $2.3{\sim}6.1tonAP/km^2$.

Synthesis and Design of Electroactive Polymers for Improving Efficiency and Thermal Stability in Organic Photovoltaics

  • Kim, Beom-Jun
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.11.2-11.2
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    • 2011
  • Polymer based organic photovoltaics have attracted a great deal of attention due to the potential cost-effectiveness of light-weight and flexible solar cells. However, most BHJ polymer solar cells are not thermally stable as subsequent exposure to heat drives further development of the morphology towards a state of macrophase separation in the micrometer scale. Here we would like to show three different approaches for developing new electroactive polymers to improve the thermal stability of the BHJ solar cells, which is a critical problem for the commercialization of these solar cells. For one of the examples, we report a new series of functionalized polythiophene (PT-x) copolymers for use in solution processed organic photovoltaics (OPVs). PT-x copolymers were synthesized from two different monomers, where the ratio of the monomers was carefully controlled to achieve a UV photo-crosslinkable layer while leaving the ${\pi}-{\pi}$ stacking feature of conjugated polymers unchanged. The crosslinking stabilizes PT-x/PCBM blend morphology preventing the macro phase separation between two components, which lead to OPVs with remarkably enhanced thermal stability. The drastic improvement in thermal stabilities is further characterized by microscopy as well as grazing incidence X-ray scattering (GIXS). In the second part of talk, we will discuss the use of block copolymers as active materials for WOLEDs in which phosphorescent emitter isolation can be achieved. We have exploited the use of triarylamine (TPA) oxadiazole (OXA) diblock copolymers (TPA-b-OXA), which have been used as host materials due to their high triplet energy and charge-transport properties enabling a balance of holes and electrons. Organization of phosphorescent domains in TPA-b-OXA block copolymers is demonstrated to yield dual emission for white electroluminescence. Our approach minimizes energy transfer between two colored species by site isolation through morphology control, allowing higher loading concentration of red emitters with improved device performance. Furthermore, by varying the molecular weight of TPA-b-OXA and the ratio of blue to red emitters, we have investigated the effect of domain spacing on the electroluminescence spectrum and device performance.

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Fabrication of Field Emission Device Using Carbon Nanotubes Synthesized by Thermal Chemical Vapor Deposition (열 화학 기상 증착법을 이용한 탄소 나노 튜브 전계 방출 소자의 제조)

  • Yu, W.J.;Cho, Y.S.;Choi, G.S.;Kim, D.J.;Kim, H.Y.;Yoon, S.K.
    • Korean Journal of Materials Research
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    • v.13 no.5
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    • pp.333-337
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    • 2003
  • We report a new fabrication process for carbon nanotube field emitters with high performance. The key of the fabrication process is trim-and-leveling the carbon nanotubes grown in trench structures by employing a planarization process, which leads to a uniform distance from the carbon nanotube tip to the electrode. In order to enable this processing, spin-on-glass liquid is applied over the CNTs grown in trench to have them stubborn adhesion among themselves as well as to the substrate. Thus fabricated emitters reveal an extremely stable emission and aging characteristics with a large current density of 40 ㎃/$\textrm{cm}^2$ at 4.5 V/$\mu\textrm{m}$. The field enhancement factor calculated from the F-N plot is $1.83${\times}$10^{5}$ $cm^{-1}$ , which is a very high value and indicates a superior quality of the emitter originating from the nature of open-tip and high stability of the carbon nanotubes obtained new process.

Adsorption of residual gases on carbon nanotubes and their field emission properties

  • Lee, Han-Sung;Jang, Eun-Soo;Goak, Jeung-Choon;Kim, Jin-Hee;Lee, Nae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.51-51
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    • 2008
  • Carbon nanotubes (CNTs) have long been reported as an ideal material due to their excellent electrical conductivity and chemical and mechanical stability as well as their high aspect ratios for field emission devices. CNT emitters made by screen printing the organic binder-based CNT paste may act as a source to release gases inside a vacuum panel. These residual gases may cause a catastrophic damage by electrical arcing or ion bombardment to the vacuum microelectronic devices and may change their physical or electrical properties by adsorbing on the CNT emitter surface. In this study, we analyzed the composition of residual gases inside the vacuum-sealed panel by residual gas analyzer (RGA), investigating the effects of individual gases of different kinds at several pressures on the field emission characteristics of CNT emitters. The residual gases included $H_2$, CO, $CO_2$, $N_2$, $CH_4$, $H_2O$, $C_2H_6$, and Ar. Effect of residual gases on the field emission was studied by observing the variation of the pulse voltages with the duty ratio of3.3% to keep the constant emission current of $28{\mu}A$. Each gas species was introduced to a vacuum chamber up to three different pressures ($5\times10^{-7}$, $5\times10^{-6}$, and $5\times10^{-5}$ torr) each for 1 h while electron emission was continued. The three different pressure regions were separated by keeping a high vacuum of $\sim10^{-8}$ torr for a 1 h. The emission was terminated 6 h after the third gas exposure was completed. Field emission characteristics under residual gases will be discussed in terms of their adsorption and desorption on the surface of CNTs and the resultant change of work function.

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A Delta Modulation Method by Means of Pair Transistor Circuit (쌍트랜지스터 회로에 의한 정착변조방식)

  • 오현위
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.8 no.2
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    • pp.24-33
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    • 1971
  • A noble method of delta modulation by means of pair transistor circuit having negative resistance charcteristic is presented. An RC parallel circuit is inserted between two eiuitter tarminals of the pair transistor circuit, and their emitters are driven by a square pulsed current source. Basically this is a relaxation oscillator circuit. But when the value of capacitors and resistanc R, and the pulse height of driving source are properly chosen, the RC parallel circuit apparently functions as integrating circuit of driviving pulses. Compared with the integrated voltage of capacitor C, a signal input voltatage supplied in series with RC parallel circuit between two emitters makes on or off either of the pair transistors. as the result, one bit pulse is sent out from the coupling resistance terminal of conducted transistor. The circuit diagram used for this experiment is presented, it i% composed with simple mod ulster circuit, differential amplifier and pulse shaping amplifier, The characteristics of the components of this ciruit are discussed, and especially quantumized noise in this delta modulation system is discussed in order to improve the signal to noise ratio which has a close relation with circut constants, quantumized voltage, pulse height and width of driving current source.

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Field Emission Characteristics of Carbon Nanotube-Copper Composite Structures Formed by Composite Plating Method (복합도금법으로 형성된 탄소나노튜브-구리 복합구조물의 전계방출특성)

  • Sung Woo-Yong;Kim Wal-Jun;Lee Seung-Min;Yoo Hyeong-Suk;Lee Ho-Young;Joo Seung-Ki;Kim Yong-Hyup
    • Journal of the Korean institute of surface engineering
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    • v.38 no.4
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    • pp.163-166
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    • 2005
  • Carbon nanotube-copper composite structures were fabricated using composite plating method and their field emission characteristics were investigated. Multi-walled carbon nanotubes (MWNTs) synthesized by chemical vapor deposition were used in the present study. It was revealed that turn-on field was about $3.0\;V/{\mu}m$ with the current density of $0.1\;{\mu}A/cm^2.$ We observed relatively uniform emission characteristics as well as stable emission current Carbon nanotube-copper composite plating method is efficient and it has no intrinsic limit on the deposition area. Moreover, it gives strong adhesion between emitters and an electrode. Therefore, we recommend that carbon nanotube-copper composite plating method can be applied to fabricate electron field emitters for large area FEDs and large area vacuum lighting sources.

Doping Controlled Emitter with a Transparent Conductor for Crystalline Si Solar Cells

  • Kim, Min-Geon;Kim, Hyeon-Yeop;Choe, U-Jin;Lee, Jun-Sin;Kim, Jun-Dong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.590-590
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    • 2012
  • A transparent conducting oxide (TCO) layer was applied in crystalline Si (c-Si) solar cells without use of the conventional SiNx-coating. A high quality indium-tin-oxide (ITO) layer was directly deposited on an emitter layer of a Si wafer. Three different types of emitters were formed by controlling the phosphorous diffusion condition. A light-doped emitter forming a thinner emitter junction showed an improved photoconversion efficiency of 14.1% comparing to 13.2% of a heavy-doped emitter. This was induced by lower recombination within a narrower depletion region of the light-doped emitter. In the aspect of light management, the intermediate refractive index of ITO is effective to reduce the light reflection leading the enhanced carrier generation in a Si absorber. For the electrical aspect, the ITO layer serves as an efficient electrical conductor and thus relieves the burden of high contact resistance of the light-doped emitter. Additionally, the ITO works as a buffer layer of Ag and Si and certainly prevents the shunting problem of Ag penetration into Si emitter region. It discusses an efficient design scheme of TCO-embedded emitter Si solar cells.

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Improving Efficiency of Low Cost EFG Ribbon Silicon Solar Cells by Using a SOD Method (SOD방법을 이용한 저가 EFG 리본 실리콘 태양전지의 효율 향상에 관한 연구)

  • Kim, Byeong-Guk;Lim, Jong-Youb;Chu, Hao;Oh, Byoung-Jin;Park, Jae-Hwan;Lee, Jin-Seok;Jang, Bo-Yun;An, Young-Soo;Lim, Dong-Gun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.3
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    • pp.240-244
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    • 2011
  • The high cost of crystalline silicon solar cells has been considered as one of the major obstacles to their terrestrial applications. Spin on doping (SOD) is presented as a useful process for the manufacturing of low cost solar cells. Phosphorus (P509) was used as an n-type emitters of solar cells. N-type emitters were formed on p-type EFG ribbon Si wafers by using a SOD at different spin speed (1,000~4,000 rpm), diffusion temperatures ($800^{\circ}C{\sim}950^{\circ}C$), and diffusion time (5~30 min) in $N_2+O_2$ atmosphere. With optimum condition, we were able to achieve cell efficiency of 14.1%.

Synthesis and Optical properties of Functional Dye/MMA Copolymers (기능성 색소/MMA공중합체의 합성과 광학적 특성)

  • Lee, Bum-Hoon;Park, Jong-Ho;Yaung, Jae-Yun
    • Proceedings of the Korean Fiber Society Conference
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    • 2003.04a
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    • pp.214-217
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    • 2003
  • In recent years the focus of research in dye chemistry has largely changed from involvement in the traditional chemistry of dyes and pigments to investigations of functional dyes. With the development of the elcetronics and information industries, the importance of functional dyes has increased. Many research papers have been published concerning new synthetic methods and mechanicsm of functional dyes. Highly functionalized dicyanopyrazine derivatives can be used as fluorescent dyestuffs, emitters for electroluminescent devices tec. (omitted)

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Constrain the SED Type of Unidentified Fermi Objects

  • Tsai, An-Li;Urata, Yuji;Takahashi, Satoko;Chuang, Chia-Jung
    • Journal of Astronomy and Space Sciences
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    • v.30 no.3
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    • pp.123-125
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    • 2013
  • 2FGL J1823.8+4312 and 2FGL J1304.1-2415 are two unidentified Fermi objects which are associated with cluster of galaxies. In order to exam the possibility of cluster of galaxies as gamma-ray emitters, we search for counterpart of these two unidentified Fermi objects in other wavebands. However, we find other candidate to be more likely the counterpart of the unidentified Fermi object for both sources. We compare their light curves and SEDs in order to identify their source types. However, data at millimeter and sub-millimeter wavebands, which is important for us to constrain the SED at synchrotron peak, is lacking of measurement. Therefore, we proposed to SMA observation for these two sources. We have got data and are doing further analysis.