• Proceedings of the Materials Research Society of Korea Conference
• /
• 2011.05a
• /
• pp.11.2-11.2
• /
• 2011

Polymer based organic photovoltaics have attracted a great deal of attention due to the potential cost-effectiveness of light-weight and flexible solar cells. However, most BHJ polymer solar cells are not thermally stable as subsequent exposure to heat drives further development of the morphology towards a state of macrophase separation in the micrometer scale. Here we would like to show three different approaches for developing new electroactive polymers to improve the thermal stability of the BHJ solar cells, which is a critical problem for the commercialization of these solar cells. For one of the examples, we report a new series of functionalized polythiophene (PT-x) copolymers for use in solution processed organic photovoltaics (OPVs). PT-x copolymers were synthesized from two different monomers, where the ratio of the monomers was carefully controlled to achieve a UV photo-crosslinkable layer while leaving the ${\pi}-{\pi}$ stacking feature of conjugated polymers unchanged. The crosslinking stabilizes PT-x/PCBM blend morphology preventing the macro phase separation between two components, which lead to OPVs with remarkably enhanced thermal stability. The drastic improvement in thermal stabilities is further characterized by microscopy as well as grazing incidence X-ray scattering (GIXS). In the second part of talk, we will discuss the use of block copolymers as active materials for WOLEDs in which phosphorescent emitter isolation can be achieved. We have exploited the use of triarylamine (TPA) oxadiazole (OXA) diblock copolymers (TPA-b-OXA), which have been used as host materials due to their high triplet energy and charge-transport properties enabling a balance of holes and electrons. Organization of phosphorescent domains in TPA-b-OXA block copolymers is demonstrated to yield dual emission for white electroluminescence. Our approach minimizes energy transfer between two colored species by site isolation through morphology control, allowing higher loading concentration of red emitters with improved device performance. Furthermore, by varying the molecular weight of TPA-b-OXA and the ratio of blue to red emitters, we have investigated the effect of domain spacing on the electroluminescence spectrum and device performance.

• Journal of IKEEE
• /
• v.11 no.1 s.20
• /
• pp.69-76
• /
• 2007

This paper presents the design of LVDS (Low-Voltage-Differential-Signaling) transmitter for Gb/s-per-pin operation. The proposed LVDS transmitter is designed using BiCMOS technology, which can be compatible with CMOS technology. To reduce chip area and enhance the robustness of LVDS transmitter, the MOS switches of transmitter are replaced with lateral bipolar transistor. The common emitter current gain($\beta$) of designed bipolar transistor is 20 and the cell size of LVDS transmitter is $0.01mm^2$. Also the proposed LVDS driver is operated at 1.8V and the maximum data rate is 2.8Gb/s approximately In addition, a novel ESD protection circuit is designed to protect the ESD phenomenon. This structure has low latch-up phenomenon by using turn on/off character of P-channel MOSFET and low triggering voltage by N-channel MOSFET in the SCR structure. The triggering voltage and holding voltage are simulated to 2.2V, 1.1V respectively.

• Bulletin of the Korean Chemical Society
• /
• v.32 no.9
• /
• pp.3290-3294
• /
• 2011

The properties of monomeric and dimeric salen-aluminum complexes, [salen(3,5-$^tBu)_2$Al(OR)], R = $OC_6H_4-p-C_6H_6$ (H1) and R = [salen(3,5-$^tBu$)AlOPh]C$(CH_3)_2$ (H2) (salen = N,N'-bis-(salicylidene)-ethylenediamine) as host layer materials in red phosphorescent organic light-emitting diodes (PhOLEDs) were investigated. H1 and H2 exhibit high thermal stability with decomposition temperature of 330 and $370^{\circ}C$. DSC analyses showed that the complexes form amorphous glasses upon cooling of melt samples with glass transition temperatures of 112 and $172^{\circ}C$. The HOMO (ca. -5.2~-5.3 eV) and LUMO (ca. -2.3~-2.4 eV) levels with a triplet energy of ca. 1.92 eV suggest that H1 and H2 are suitable for a host material for red emitters. The PhOLED devices based on H1 and H2 doped with a red emitter, $Ir(btp)_2$(acac) (btp = bis(2-(2'-benzothienyl)-pyridinato-N,$C^3$; acac = acetylacetonate) were fabricated by vacuum-deposition and solution process, respectively. The device based on vacuum-deposited H1 host displays high device performances in terms of brightness, luminous and quantum efficiencies comparable to those of the device based on a CBP (4,4'-bis(Ncarbazolyl) biphenyl) host while the solution-processed device with H2 host shows poor performance.

• Bulletin of the Korean Chemical Society
• /
• v.31 no.8
• /
• pp.2293-2298
• /
• 2010

Focused electrospray (FES) deposition method is presented for matrix-assisted laser desorption/ionization (MALDI) mass spectrometry. FES ion optics consists of two cylindrical focusing electrodes capped with a truncated conical electrode through which an electrospray emitter passes along the cylindrical axis. A spray of charged droplets is focused onto a sample well on a MALDI target plate under atmospheric pressure. The shape and size distributions of matrix crystals are visualized by scanning electron microscope and the mass spectra are obtained by time-of-flight mass spectrometry. Angiotensin II, bradykinin, and substance P are used as test samples, while $\alpha$-cyano-4-hydroxycinnamic acid and dihydroxybenzoic acid are employed as matrices. FES of a sample/matrix mixture produces fine crystal grains on a 1-3 mm spot and reproducibly yields the mass spectra with little shot-to-shot and spot-to-spot variations. Although FES greatly stabilizes the signals, the space charge due to matrix ions limits the detection sensitivity of peptides. To avoid the space charge problem, we adopted a dual FES/FES mode, which separately deposits matrix and sample by FES in sequence. The dual FES/FES mode reaches the detection sensitivity of 0.88 amol, enabling ultrasensitive of peptides by homogeneously depositing matrix and sample under atmospheric pressure.

• Korean Journal of Materials Research
• /
• v.13 no.5
• /
• pp.333-337
• /
• 2003

We report a new fabrication process for carbon nanotube field emitters with high performance. The key of the fabrication process is trim-and-leveling the carbon nanotubes grown in trench structures by employing a planarization process, which leads to a uniform distance from the carbon nanotube tip to the electrode. In order to enable this processing, spin-on-glass liquid is applied over the CNTs grown in trench to have them stubborn adhesion among themselves as well as to the substrate. Thus fabricated emitters reveal an extremely stable emission and aging characteristics with a large current density of 40 ㎃/$\textrm{cm}^2$ at 4.5 V/$\mu\textrm{m}$. The field enhancement factor calculated from the F-N plot is $1.83${\times}$10^{5}$ $cm^{－1}$ , which is a very high value and indicates a superior quality of the emitter originating from the nature of open-tip and high stability of the carbon nanotubes obtained new process.

• Journal of Radiation Protection and Research
• /
• v.41 no.2
• /
• pp.155-159
• /
• 2016

Background: Nuclear reactors produce a great number of antielectron neutrinos mainly from beta-decay chains of fission products. Such neutrinos have energies mostly in MeV range. We are interested in neutrinos in a region of keV, since they may take part in special weak interactions. We calculate reactor antineutrino spectra especially in the low energy region. In this work we present neutrino spectrum from a typical pressurized water reactor (PWR) reactor core. Materials and Methods: To calculate neutrino spectra, we need information about all generated nuclides that emit neutrinos. They are mainly fission fragments, reaction products and trans-uranium nuclides that undergo negative beta decay. Information in relation to trans-uranium nuclide compositions and its evolution in time (burn-up process) were provided by a reactor code MVP-BURN. We used typical PWR parameter input for MVP-BURN code and assumed the reactor to be operated continuously for 1 year (12 months) in a steady thermal power (3.4 GWth). The PWR has three fuel compositions of 2.0, 3.5 and 4.1 wt% $^{235}U$ contents. For preliminary calculation we adopted a standard burn-up chain model provided by MVP-BURN. The chain model treated 21 heavy nuclides and 50 fission products. The MVB-BURN code utilized JENDL 3.3 as nuclear data library. Results and Discussion: We confirm that the antielectron neutrino flux in the low energy region increases with burn-up of nuclear fuel. The antielectron-neutrino spectrum in low energy region is influenced by beta emitter nuclides with low Q value in beta decay (e.g. $^{241}Pu$) which is influenced by burp-up level: Low energy antielectron-neutrino spectra or emission rates increase when beta emitters with low Q value in beta decay accumulate Conclusion: Our result shows the flux of low energy reactor neutrinos increases with burn-up of nuclear fuel.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.1038-1041
• /
• 2003

In the paper, we investigated silicon surface microstructures formed by reactive ion etching in hollow cathode system. Wet anisotropic chemical etching technique use to form random pyramidal structure on <100> silicon wafers usually is not effective in texturing of low-cost multicrystalline silicon wafers because of random orientation nature, but High density hollow cathode plasma system illustrates high deposition rate, better film crystal structure, improved etching characteristics. The etched silicon surface is covered by columnar microstructures with diameters form 50 to 100nm and depth of about 500nm. We used $SF_{6}$ and $O_{2}$ gases in HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}$ $cm^{-3}$ at a discharge current of 20 mA. Silicon etch rate of 1.3 ${\mu}s/min$. was achieved with $SF_{6}/O_{2}$ plasma conditions of total gas pressure=50 mTorr, gas flow rate=40 sccm, and rf power=200 W. Our experimental results can be used in various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this paper we directed our study to the silicon etching properties such as high etching rate, large area uniformity, low power with the high density plasma.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.280-284
• /
• 2004

Multicrystalline silicon wafers were textured in an alkaline bath, basically using sodium hydroxide and in acidic bath, using mainly hydrofluoric acid (HF), nitric acid $(HNO_3)$ and de-ionized water (DIW). Some wafers were also acid polished for the comparative study. Comparison of average reflectance of the samples treated with the new recipe of acidic solution showed average diffuse reflectance less than even 5 percent in the optimized condition. Solar cells were thus fabricated with the samples following the main steps such as phosphorus doping for emitter layer formation, silicon nitride deposition for anti-reflection coating by plasma enhanced chemical vapor deposition (PECVD) and front surface passivation, screen printing metallization, co-firing in rapid thermal processing (RTP) Furnace and laser edge isolation and confirmed >14 % conversion efficiency from the best textured samples. This isotropic texturing approach can be instrumental to achieve high efficiency in mass production using relatively low cost silicon wafers as starting material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.108-111
• /
• 2004

An efficiency and brightness of the Organic Light-emitting Diodes(OLEDs) by insertion of the novel layer between a singlet emitter and an electron transporting layer without doping processes, has been improved. The novel layers named as the K-M1 and K-M2 layers have shown the excellent improvement in the carrier balance and recombination efficiency. New devices using the K-M1 and K-M2 layers have shown a high efficiencies of over 15cd/A and 61m/W$(at\;20mA/cm^2)$, and brightness of over $16,000cd/m^2(at\;100mA/cm^2)$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.51-51
• /
• 2008

Carbon nanotubes (CNTs) have long been reported as an ideal material due to their excellent electrical conductivity and chemical and mechanical stability as well as their high aspect ratios for field emission devices. CNT emitters made by screen printing the organic binder-based CNT paste may act as a source to release gases inside a vacuum panel. These residual gases may cause a catastrophic damage by electrical arcing or ion bombardment to the vacuum microelectronic devices and may change their physical or electrical properties by adsorbing on the CNT emitter surface. In this study, we analyzed the composition of residual gases inside the vacuum-sealed panel by residual gas analyzer (RGA), investigating the effects of individual gases of different kinds at several pressures on the field emission characteristics of CNT emitters. The residual gases included $H_2$, CO, $CO_2$, $N_2$, $CH_4$, $H_2O$, $C_2H_6$, and Ar. Effect of residual gases on the field emission was studied by observing the variation of the pulse voltages with the duty ratio of3.3% to keep the constant emission current of $28{\mu}A$. Each gas species was introduced to a vacuum chamber up to three different pressures ($5\times10^{-7}$, $5\times10^{-6}$, and $5\times10^{-5}$ torr) each for 1 h while electron emission was continued. The three different pressure regions were separated by keeping a high vacuum of $\sim10^{-8}$ torr for a 1 h. The emission was terminated 6 h after the third gas exposure was completed. Field emission characteristics under residual gases will be discussed in terms of their adsorption and desorption on the surface of CNTs and the resultant change of work function.