• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.392-395
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• 2003

For the first time, the new dual trench gate Emitter Switched Thyristor is proposed for eliminating snap-back effect which leads to a lot of serious problems of device applications. Also, the parasitic thyristor that is inherent in the conventional EST is completely eliminated in the proposed EST structure, allowing higher maximum controllable current densities for ESTs. Moreover, the new dual trench gate allows homogenous current distribution throughout device and preserves the unique feature of the gate controlled current saturation of the thyristor current. The conventional EST exhibits snap-back with the anode voltage and current density 2.73V and $354/{\S}^2$, respectively. But the proposed EST exhibits snap-back with the anode voltage and current density 0.93V and $58A/{\S}^2$, respectively. Saturation current density of the proposed EST at anode voltage 6.11V is $3797A/{\S}^2$. The characteristics of 700V forward blocking of the proposed EST obtained from two dimensional numerical simulations (MEDICI) is described and compared with that of the conventional EST.

• Laser Solutions
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• v.14 no.3
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• pp.1-6
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• 2011

Globally, the interest of renewable energy has become an upsurge. Especially, the solar industry is the one which is getting rapid growth rate. Many of researchers have been undertaking to improve the efficiency of solar cell to accomplish grid parity. The most of research has been concentrated on two methods, one on the selective emitter and the other is on LBSF (Local Back Surface Field) formation. Laser patterning will be needed to eliminate the thin film to form selective emitter and LBSF of solar cell. This paper reports some experimental results in laser patterning process for high-efficiency crystalline solar cell manufacturing. The experimental results indicate that the patterning quality depends on the average power and repetition rate of laser. The experimental results prove that the laser patterning process is an advantageous method to improve the efficiency of solar cell.

• Korean Journal of Materials Research
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• v.16 no.4
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• pp.231-234
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• 2006

To obtain balanced white-emission and high efficiency of the organic light-emitting diodes (OLEDs), a deep blue emitter made of N,N'-diphenyl-N,N'-bis(1-naphthyl)- (1,1'-biphenyl)-4,4'-diamine (NPB) emitter and a new red emitter made of the Bis(2,4 -dimethyl-8-quinolinolato)(triphenylsilanolato)aluminum(III) (24MeSAlq) doped with red fluorescent 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H -pyran (DCJTB) were used and the device was tuned by varying the thickness of the DCJTB-doped 24MeSAlq and $Alq_3$. For the white OLED with 10 nm thickness DCJTB (0.5%) doped 24MeSAlq and 45 nm thick $Alq_3$, the maximum luminance of about 29,700 $Cd/m^2$ could be obtained at 14.8 V. Also, Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.32, 0.28) at about 100 $Cd/m^2$, which is very close to white light equi-energy point (0.33, 0.33), could be obtained.

• Journal of Communications and Networks
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• v.17 no.5
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• pp.491-498
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• 2015

Recognition of radar emitter signals is one of core elements in radar reconnaissance systems. A novel method based on singular value decomposition (SVD) and the main ridge slice of ambiguity function (AF) is presented for attaining a higher correct recognition rate of radar emitter signals in case of low signal-to-noise ratio. This method calculates the AF of the sorted signal and ascertains the main ridge slice envelope. To improve the recognition performance, SVD is employed to eliminate the influence of noise on the main ridge slice envelope. The rotation angle and symmetric Holder coefficients of the main ridge slice envelope are extracted as the elements of the feature vector. And kernel fuzzy c-means clustering is adopted to analyze the feature vector and classify different types of radar signals. Simulation results indicate that the feature vector extracted by the proposed method has satisfactory aggregation within class, separability between classes, and stability. Compared to existing methods, the proposed feature recognition method can achieve a higher correct recognition rate.

• 한국태양에너지학회:학술대회논문집
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• 2011.04a
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• pp.101-104
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• 2011

Many studies in crystalline silicon solar cell fabrication have been focused on high efficiency and low cost. In this paper, we carried out the doping procedure by varying the silicon wafer thicknesses and sheet resistance. The silicon wafers with various thicknesses were obtained by shiny etching and texturing. The thicknesses of wafers were 100, 120, 150, and $180{\mu}m$. The emitter layer formed by $POCl_3$ doping process had sheet resistance with 40 and $80{\Omega}/sq$ for selective emitter application. This experiment indicated wafer thickness did not influence sheet resistance but lifetime was strongly effected.

• Proceedings of the Korean Nuclear Society Conference
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• 1996.05d
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• pp.101-106
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• 1996

For the application of the neutron flux mapping, an accurate calculation of the sensitivity is required because the sensitivity is proportional to the neutron flux density. Sensitivity is defined as the current per unit length per unit neutron flux and it mainly depends on the depression factor(f), the escape probability from the emitter($\varepsilon$1) and the charge build-up factor of the insulator layer(c). A Monte Carlo simulation was accomplished to calculate the sensitivity of rhodium emitter material and alumina(Al$_2$O$_3$) insulator with a cylindrical geometry, based on the (n,${\beta}$) interaction and on other interaction including the secondary electron generation for the more accurate estimation of the sensitivity. From the simulation results, factors fur the sensitivity were accurately calculated and compared with other theoretical and experimental values. In addition, the sensitivity linearly increases and saturates as the emitter radius increases. The accomplished method is useful in the analysis for the change of SPND sensitivity as a function of burn-up and in the optimum design of SPND.

• Magazine of the Korean Society of Agricultural Engineers
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• v.41 no.3
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• pp.33-40
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• 1999

Variations in the discharge rates of drip emittes were examined to find the effects of operation pressure and the tube length and to evaluate performance of the emitters. Several point-source emitters were selected such as pressure compensated, anti-leak pressure compensated, turbulent flow regulated, flow regulated, ready-made dripper, and spaghetti. Combination of operation pressure and tube length were compared. The microirrigatioon system was operated at pressures of 0.5 , 1.0 , 1.5 and 2.0 bar. The discharge from emitters wer collected at every ten meters along the lateral tube and weighted. In order to evaluate the drip emitters performance coeffcient of discharge variation , statistical uniformity, and emission uniformity were calculated. No significant variation in discharge along drip tube resulted with all emitters. There is no trend of variatiiono of discharge rate from pressure compensated emitters with increase in operation pressures. But discharge rate from other types of emitters increased with increase in operation pressures. The nominal discharge of each emitter was secured at pressure of 1.0 bar, Evaluation using statiscal and emission uniformity coefficients indicated that most of the emitters excepts tubulent flow regulated emitter and ready-made dripper performed at excellent level.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.15-16
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• 2007

The high efficiency and low cost solar cells in order to it applied a dopant pastes diffusion process. The dopant pastes diffusion process which it uses is easily applied in screen-printing solar cells output line. in this paper, it used the Ferro 99-038 phosphorus diffusion pastes source and it analyzed a sheet resistance and a uniformity degree. And it knew the quality of the sheet resistance which it follows in temperature and time condition. The temperature variable it let and it fixed the time in 7 minutes. It will be able to measure the sheet resistance of $40({\Omega}/sq),\;30({\Omega}/sq),\; 20({\Omega}/sq)$. also average uniformity of the sheet resistance was below 5%.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1534-1535
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• 2007

This paper describes a novel microfluidic device with a microfabricated electrospray source for a sheathless electrospray ionization interface to a mass spectrometer. This electrospray ionization-mass spectrometry (ESI-MS) device consists of a triangular-shaped metal emitter, allowing the generation of an efficient electrospray for peptide detection, and microfluidic channels monolithically in a glass microchip. The performance of the proposed interface was evaluated by opimizing its experimental condition and spraying standard peptides. The spraying has high signal strength and stability, with a relative standard deviation of 2.9% and singly-charged and doubly-charged peaks of the peptides were successfully detected. The metal emitter source showed a good performance to be comparable to commercially available emitters in signal strength and stability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.68-69
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• 2007

To make cost-effective solar cells, We have to use low cost material or make short process time or high temperature process. In solar cells, formation of emitter is basic and important technique according to build-up P-N junction. Diffusion process using spin-on dopants has all of this advantage. In this paper, We investigated n+ emitter formation spin-on dopants to apply crystalline silicon solar cells. We known variation of sheet resistance according to variation of temperature and single-crystalline and multi-crystalline silicon wafer using Honeywell P-8545 phosphorus spin-on dopants. We obtain uniformity of sheet resistance within 3~5% changing RPM of spin coater.