• 제목/요약/키워드: Emissive Layer

검색결과 80건 처리시간 0.029초

유기 발광 소자에서 정공 주입 버퍼층의 효과 (Effects of Hole-Injection Buffer Layer in Organic Light-Emitting Diodes)

  • 정동희;김상걸;오현석;홍진웅;이준웅;김영식;김태완
    • 한국전기전자재료학회논문지
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    • 제16권9호
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    • pp.816-825
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    • 2003
  • Current-voltage-luminance characteristics of organic light-emitting diodes (OLEDs) were measured in the temperature range of 10 K~300 K. Indium-tin-oxide (ITO) was used as an anode and aluminum as a cathode in the device. Organic of N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) was used for a hole transporting material, and tris (8-hydroxyquinolinato) aluminum (Alq$_3$) for an electron transporting material and emissive material. And copper phthalocyanine (CuPc), poly(3,4-ethylenedi oxythiophene);poly(styrenesulfonate) (PEDOT:PSS), and poly(N-vinylcarbazole) (PVK) were used for hole-injection buffer layers. From tile analysis of electroluminescence (EL) and photoluminesccnce (PL) spectra of the Alq$_3$, the EL spectrum is more greenish then that of PL. And the temperature-dependent current-voltage characteristics were analyzed in the double and multilayer structure of OLEDS. Electrical conduction mechanism was explained in the region of high-electric and low-electric field. Temperature-dependent luminous efficiency and operating voltage were analyzed from the current-voltage- luminance characteristics of the OLEDS.

Two-color-mixed white organic light-emitting diodes with a high color temperature

  • Park, Jung-Soo;Yu, Jae-Hyung;Jeon, Woo-Sik;Son, Young-Hoon;Kulshreshtha, Chandramouli;Kwon, Jang-Hyuk
    • Journal of Information Display
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    • 제12권1호
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    • pp.51-55
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    • 2011
  • Efficient two-color-mixed white organic light-emitting diodes are presented herein by employing a sky-blue phosphorescent dopant of iridium(III)bis[4,6-(difluorophenyl)-pyridinato-N,$C^{2'}$]picolinate (FIrpic) and an orange phosphorescent dopant of bis(2-phenylquinoline)(acetylacetonate)iridium(III) ($Ir(phq)_2$acac) on the emissive layer. Very stable color variation under ${\Delta}$0.02 until a 5000 cd/$m^2$ brightness value was realized by efficient carrier control in a multi-stacked emitting layer of blue/red/blue colors. Maximum current and power efficiencies of 23.8 cd/A and 22.9 lm/W in the forward direction were obtained. With balanced emission from the two emitters, the white-light emission of high correlated color temperature of 7308K and the Commission Internationale de I'Eclairage coordinates of (0.30, 0.33) were achieved.

Sequential Formation of Multiple Gap States by Interfacial Reaction between Alq3 and Alkaline-earth Metal

  • Kim, Tae Gun;Kim, Jeong Won
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.129.2-129.2
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    • 2013
  • Electron injection enhancement at OLED (organic light-emitting diodes) cathode side has mostly been achieved by insertion of a low work function layer between metal electrode and emissive layer. We investigated the interfacial chemical reactions and electronic structures of alkaline-earth metal (Ca, Ba)/Alq3 [tris(8-hydroxyquinolinato)aluminium] and Ca/BaF2/Alq3 using in-situ X-ray & ultraviolet photoelectron spectroscopy. The alkaline-earth metal deposited on Alq3 generates two energetically separated gap states in sequential manner. This phenomenon is explained by step-by-step charge transfer from alkali-earth metal to the lowest unoccupied molecular orbital (LUMO) states of Alq3, forming new occupied states below Fermi level. The BaF2 interlayer initially prevents from direct contact between Alq3 and reactive Ca metal, but it is dissociated into Ba and CaF2. However, as the Ca thickness increases, the Ca penetrates the interlayer to directly participate in the reaction with underlying Alq3. The influence of the multiple gap state formation by the interfacial chemical reaction on the OLED performance will be discussed.

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Efficient White Organic Light-Emitting Diodes (WOLEDs) with Device Structure Modification

  • Kim, Jun-Ho;Seo, Ji-Hoon;Seo, Ji-Hyun;Hyung, Gun-Woo;Lee, Kum-Hee;Yoon, Seoung-Soo;Kim, Young-Kwan
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1403-1406
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    • 2007
  • An effective WOLED structure was demonstrated which improved a luminous efficiency and white color chromaticity independent on applied bias by employing effective carrier transporting layer, without any alteration of emissive materials. The modified WOLEDs exhibited 2 times higher luminous efficiency than the control device and showed balanced white emission during an operation.

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Improved Performance of White Phosphorescent Organic Light-Emitting Diodes through a Mixed-Host Structure

  • Lee, Jong-Hee;Lee, Jeong-Ik;Chu, Hye-Yong
    • ETRI Journal
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    • 제31권6호
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    • pp.642-646
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    • 2009
  • Highly efficient white phosphorescent organic light-emitting diodes with a mixed-host structure are developed and the device characteristics are studied. The introduction of a hole-transport-type host (N, N'-dicarbazolyl-3-3-benzen (mCP)) into an electron-transport-type host (m-bis-(triphenylsilyl)benzene (UGH3)) as a mixed-host emissive layer effectively achieves higher current density and lower driving voltage. The peak external quantum and power efficiency with the mixed-host structure improve up to 18.9% and 40.9 lm/W, respectively. Moreover, this mixed-host structure device shows over 30% enhanced performance compared with a single-host structure device at a luminance of 10,000 $cd/m^2$ without any change in the electroluminescence spectra.

Stable efficiency roll-off in blue phosphorescent organic light-emitting diodes using a mixed host structure

  • Lee, Jong-Hee;Lee, Jeong-Ik;Lee, Jun-Yeob;Chu, Hye-Yong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.192-195
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    • 2009
  • We developed highly efficient blue PHOLEDs with reduced roll-off by using a mixed host structure. The balanced charge carrier injection and the distributed recombination zone within emissive layer resulted in a highly stable efficiency roll-off with quantum efficiencies of 20.1 and 18.1 % at a luminance of 1000 and 10000 cd/$m^2$.

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전도성 고분자를 Buffer층으로 사용한 유기 발광 소자의 제작과 특성 연구 (Characteristics of organic electroluminescent devices using conducting polymer materials with buffer layers)

  • 이호식;박종욱;김태완;강도열
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 추계학술대회 논문집
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    • pp.125-128
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    • 1998
  • Electroluminescent(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. One of the problems of such device is a lifetime, where a degradation of the cell is possibly due to an organic layer's thickness, morphology and interface with electrode. In this study, light-emitting organic electroluminescent devices were fabricated using Alq$_3$(8-hydroxyquinolinate aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl)-[1-1'-biphenyl]-4,4'-diamine).Where Alq$_3$ is an electron-transport and emissive layer, TPD is a hole-transport layer. The cell structure is ITO/TPD/Alq$_3$/Al and the cell is fabricated by vacuum evaporation method. In a measurement of current-voltage characteristics, we obtained a turn-on voltage at about 9 V. And we used other buffer layer of PPy(Polypyrrole) with ITO/PPy/TPD/Alq$_3$/Al structure. We observed a surface morphology by AFM(Atomic Force Microscopy), UV/visible absorption spectrum, and PL(Photoluminescence) spectrum. We obtained the UV/visible absorption peak at 358nm in TPD and at 359nm in Alq$_3$, and at 225nm and the PL peaks at 410nm in TPD and at 510nm in Alq$_3$ and at 350nm. We also studied EL spectrum in the cell structure of ITO/TPD/Alq$_3$/Al and ITO/PPy/TPD/Alq$_3$/Al and we observed the EL spectrum peak at 510nm from our cell

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Buffer층을 가진 유기 전기 발광 소자의 특성 (Characteristics of organic electroluminescent devices having buffer layers)

  • 이호식;고삼일;정택균;이원재;김태완;강도열
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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    • pp.399-402
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    • 1998
  • Electroluminescent(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. One of the problems of such device is a lifetime, where a degradation of the cell is possibly due to an organic layers thickness, morphology and interface with electrode. In this study, light-omitting organic electroluminescent devices were fabricated using Alq$_3$(8-hydroxyquinolinate aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl(1-1\`-biphenyl]-4,4'-diamine). Where Alq$_3$ is an electron-transport and emissive layer, TPD is a hole-transport layer. The cell structure is ITO/TPD/Alq$_3$/Al and the cell is fabricated by vacuum evaporation method. In a measurement of current-voltage characteristics, we obtained a turn-on voltage at about 9 V. We also investigated stability of the devices using buffer layer with blend of PEI (Poly ether imide) and TPD by varying mot ratios between ITO and Alq$_3$. In current-voltage characteristics measurement, we obtained the turn-on voltage at about 6 V and observed an anomalous behavior at 3∼4 V. And we used other buffer layer of PEDT(3,4-pyrazino-3',4'-ethylenedithio-2,2',5,5'-tetrathiafulvalenium) with ITO/PEDT/TPD/Alq$_3$Al structure. We observed a surface morphology by AFM(Atomic Force Microscopy), UV/visible absorption spectrum, and PL(Photoluminescence) spectrum. We obtained the UV/visible absorption peak at 358nm in TPD and at 359nm in Alq$_3$, and the PL peaks at 410nm in TPD and at 510nm in Alq$_3$. We also studied EL spectrum in the cell structure of ITO/(TPD+PEI)/Alq$_3$/Al.

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Inverted CdSe@ZnS Quantum Dots Light-Emitting Diode using Low-Work Function Polyethylenimine Ethoxylated (PEIE) modified ZnO

  • Kim, Choong Hyo;Kim, Hong Hee;Hwang, Do Kyung;Suh, Kwang S;Park, Cheol Min;Choi, Won Kook
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.148-148
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    • 2015
  • Over the past several years, Colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been developed for the future of optoelectronic applications. An inverted-type quantum-dot light-emitting-diode (QDLED), employing low work function organic material polyethylenimine ethoxylated(PEIE) (<10 nm)[1] modified ZnO nanoparticles (NPs) as electron injection and transport layer, was fabricated by all solution processing method, instead of electrode in the device. The PEIE surface modifier incorporated on the top of the ZnO NPs film, facilitates the enhancement of both electorn injection into the CdSe-ZnS QD emissive layer by lowering the workfunction of ZnO from 3.58eV to 2.87eV and charge balance on the QD emitter. In this inverted QDLEDs, blend of poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo) and poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] are used as hole transporting layer (HTL) to improve hole transporting property. At the operating voltage of 7.5 V, the QDLED device emitted spectrally orange color lights with high luminance up to 11110 cd/m2, and showed current efficiency of 2.27 cd/A.[2]

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Crucible Boat 홀 크기와 정공 수송층 증착속도에 따른 유기밭광 다이오드의 전기적 특성 (Electrical Properties of OLEDs due to the Hole-size of Crucible Boat and Deposition Rate of Hole Transport Layer)

  • 김원종;신현택;신종열;홍진웅
    • 한국전기전자재료학회논문지
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    • 제22권1호
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    • pp.74-80
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    • 2009
  • In the structure of ITO/N,N'-diphenyl-N,N' bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)/tris (8-hydroxyquinoline)aluminum($Alq_3$)/Al device, we studied the efficiency improvement of organic light-emitting diodes due to variation of deposition rate of hole transport layer (TPD) materials using hole-size of crucible boat. The thickness of TPD and $Alq_3$ was manufactured 40 nm, 60 nm, respectively under a base pressure of $5{\times}10^{-6}$ Torr using a thermal evaporation. The $Alq_3$ used for an electron-transport and emissive layer were evaporated to be at a deposition rate of $2.5\;{\AA}/s$. When the deposition rate of TPD increased from 1.5 to $3.0\;{\AA}/s$, we studied the efficiency improvement of TPD using the hole-size of crucible is 1.0 mm. When the deposition rate of TPD is $2.5\;{\AA}/s$, we found that the average roughness is rather smoother, the luminous efficiency the external quantum efficiency is superior to the others. Compared to the two from the devices made with the deposition rate of TPD is $2.0\;{\AA}/s$ and $3.0\;{\AA}/s$, the external quantum efficiency was improved by four-times and two-times, respectively.