• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.1
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• pp.42-46
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• 2017

$SrAl_2O_4$ : $Eu^{2+}$,$Dy^{3+}$ phosphorescent phosphors were synthesized by skull melting method. The molar ratio of oxides in the phosphors synthesized by the skull melting technique was $SrCO_3$ : $Al(OH)_3$ : $Eu_2O_3$ : $Dy_2O_3$= 1 : 2 : 0.015 : 0.02. Crystal structure and surface morphology were investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis. Optical properties of the synthesized $SrAl_2O_4$ : $Eu^{2+}$,$Dy^{3+}$ were measured by photoluminescence (PL) spectrometer for in-depth study on the excitation, emission and afterglow properties. From the PL measurements, it was found that excitation occurred in the wavelength range from 300 to 420 nm with peak position at 360 nm. The emission spectrum showed a broad curve in the wavelength from 450 to 600 nm with peak position at 530 nm. $SrAl_2O_4$ : $Eu^{2+}$,$Dy^{3+}$ phosphors exhibited afterglow properties with emission that lasted for a long period.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.42-49
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• 2011

We deposited $SiN_x$ thin films by using PECVD technique at $200^{\circ}C$ with various flow ratios of the $SiH_4/N_2$ gases. The photoluminescence measurements revealed that the maximum emission wavelength shifted to long wavelength as the ratio increased, however, positions of the several peak wavelengths, such as 1.9, 2.2, 2.4, and 3.1 eV, were independent on the ratio. Changes of the photoluminescence spectra were measured in the $N_{2}-$, $H_{2}-$, and $O_2$-annealed films. The luminescence intensities increased after the annealing process. In particular, the maximum emission wavelength shifted to short wavelength after $H_{2}-$ or $O_2$-annealing. But there were still several peaks on the spectra of all annealed films, several peak positions remained to be unchanged after the annealing. As for the light emission mechanism, we have considered the defect states of the Si- and N- dangling bonds in the $SiN_x$ energy gap, so that the energy transitions from/to the conduction/valence bands and the defect states in the gap were attributed to the light emission in the $SiN_x$ films. The experimental results point to the possibility of a Si-based light emission materials for flexible Si-based electro-optic devices.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.1
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• pp.9-15
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• 2002

In this thesis, blue emission organic light emitting devices were fabricated by using vacuum deposition method. Two types of device were employed to realize blue emission. Type I had an emitting layer containing TPB-doped $Alq_3$ and type II had an emitting layer containing DPA-doped $Alq_3$. The variable dopant concentration was 0.5 ~2 wt%. The electrical and optical characteristics of these devices have been investigated. The more dopant concentration increased, the nearer the blue coordinate. Type I than type II had a lower turn on voltage and driving voltage. The emission luminescence of type II was brighter than that of type I. When we applied 15V to type II with DPA(2wt%)-doped $Alq_3$, we have achived the emission luminescence of 1282cd/$m^2$, the emission wavelength of 476nm and the blue emission CIE coordination of (0.1273, 0.0672)

• Publications of The Korean Astronomical Society
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• v.27 no.4
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• pp.361-362
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• 2012

We summarize the progress on the rest-frame optical spectroscopy of quasars at 3$2.5-5{\mu}m$. This spectral window has been utilized for detecting redshifted $H{\alpha}$ emission lines of our high redshift subsample of quasars. From the calculated emission line widths and luminosities we measured supermassive black hole masses using well calibrated optical mass estimators. Science topics regarding optical based black hole masses at high-z are discussed.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.8
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• pp.24-30
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• 1998

A blue LED of $In_{x}Ga_{1-x}N$ multiple quantum well structure which had the blue emission spectrum of donor-acceptor pair transition generated form Si-Zn co-doped $In_{x}Ga_{1-x}N$ active layer, was fabricated. The $In_{x}Ga_{1-x}N$ MQW heterojunction LED structure was grown by MOCVD on the sapphire substrate with (0001) surface orientation at 800.deg. C. The fabricated LED exhibited forward cut-in voltage of 4~4.5V and reverse breakdown voltage of -13V. Its optical chracteristics showed that the center wavelength of peak emission occurred at 460nm and the optical intensity was increased linearly with respect to the injected electrical current above 5mA.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.306-309
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• 2016

The Cs₃Sb photocathode was formed by non-vacuum process technology. An in-situ vacuum device was fabricated successively with flat cesium antimonide photocathode emitters fabricated in a process chamber. The electrical properties of the device were characterized. Electron emission from the devices was induced by photoemitted electrons, which were accelerated by an anode electric field that was shielded from the photoemitter surface. The electrical characteristics of the devices were investigated by measuring the anode current as a function of device operation times with respect to applied anode voltages. Planar blue LED light with a 450 nm wavelength was used as an excitation source. The results showed that the cesium antimonide photocathode emitter has the potential of long lifetime with stable electron emission characteristics in panel devices. These features demonstrate that the cesium antimony photocathodes produced by non-vacuum processing technology is suitable for flat cathodes in panel device applications.

• ETRI Journal
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• v.29 no.6
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• pp.779-784
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• 2007

In this paper, we report the experimental results of a hybrid wideband fiber amplifier. The amplifying medium is a concatenated hybrid fiber consisting of Er-doped fiber (EDF) and dispersion compensating fiber (DCF). The gain mechanisms are based on stimulated emission in the EDF and stimulated Raman scattering (SRS) in the DCF. Since we simultaneously use optical amplification by the two processes, the gain bandwidth is easily expanded over 105 nm by a two-tone pumping scheme. Using an experimental setup constructed with a hybrid structure of EDF-DCF-EDF, we analyzed the spectral behavior of amplified spontaneous emission for pumping powers. We achieved an optical gain of over 20 dB in the wavelength range from 1,500 to 1,600 nm under optimized pumping conditions to make the spectral gain shape flat.

• The Bulletin of The Korean Astronomical Society
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• v.39 no.2
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• pp.81.1-81.1
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• 2014

We utilized a 2-D PDR code developed by Lee et al. (2014) to explore the observed OH line fluxes toward embedded protostars. This 2-D PDR code combines self-consistently the FUV radiative transfer, gas-energetics, chemistry, and line radiative transfer. We modeled two sources, GSS30-IRS1 and Elias29, which show conspicuous line emission in the Herschel/PACS wavelength range. The physical and chemical structure for a given embedded source was derived by fitting the PACS CO line fluxes. After exploring various parameter spaces, we conclude that IR-pumping effect either by the central IR source and dust in-situ is insignificant for OH emission, unlike previous studies. We here present a possible solution for the observed OH fluxes, which require a high OH abundance and temperature at the inner-part of the UV heated cavity wall.

• KSBB Journal
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• v.16 no.6
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• pp.609-613
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• 2001

New protein-based biosensors using fluorescence for the detection heavy metal ions were developed. The detection range of heavy metal ions was between 10$\^$-3/ mM - 1 mM using casein and albumin as a transducer of biosensor, respectively. Casein showed better results for detecting heavy metal ions than albumin. Simple assay method was developed for the selective analysis of the two heavy metal ions by the fluorescence at wavelength of excitation and emission. This method was successfully applied to determining the concentrations Of Co$\^$2+/ and Fe$\^$3+/.

• The Bulletin of The Korean Astronomical Society
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• v.35 no.2
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• pp.69.2-69.2
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• 2010

We investigate the southeastern region of the Vela supernova remnant (SNR) in the multi-wavelength domains. This region is quite interesting because it includes the bullet feature D/D´ and another SNR (the Vela Jr.). The C IV $\lambda\lambda1548$, 1551 emission-line morphologies obtained from the FIMS/SPEAR data show that there are several local peaks of C IV on the bullet D/D´ and the Vela Jr. SNR. This may provide clues to direct interaction between both SNRs. Also, we found that the southeastern side of the Vela is in direct contact with an H-alpha ring feature whose central source seems to be a B-type star, HD 76161. The C IV emission peaks along this contact boundary. We investigate this interacting region in detail.