• Journal of the Korea Institute of Military Science and Technology
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• v.4 no.2
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• pp.122-129
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• 2001

A characterization procedure for analyzing symmetric coupled MIS(Metal-Insulator-Semiconductor) transmission line is used the same procedure as a general single layer symmetric coupled line with perfect dielectric substrate from the extraction of the characteristic impedance and propagation constant for even- and odd-mode. In this paper, an analysis for a new substrate shielding symmetric coupled MIS structure consisting of grounded crossbar at the interface between Si and SiO2 layer using the Finite- Difference Time-Domain(FDTD) method is presented. In order to reduce the substrate effects on the transmission line characteristics, a shielding structure consisting of grounded crossbar lines over time-domain signal has been examined. Symmetric coupled MIS transmission line parameters for even- and odd-mode are investigated as the functions of frequency, and the extracted distributed frequency- dependent transmission line parameters and corresponding equivalent circuit parameters as well as quality factor for the new MIS crossbar embedded structure are also presented. It is shown that the quality factor of the symmetric coupled transmission line can be improved without significant change in the characteristic impedance and effective dielectric constant.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.8
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• pp.61-67
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• 2010

A characterization procedure for analyzing symmetric coupled MIS(Metal-Insulator-Semiconductor) transmission line is used the same procedure as a general single layer symmetric coupled line with perfect dielectric substrate from the extraction of the characteristic impedance and propagation constant for even- and odd-mode. In this paper, an analysis for a new substrate shielding symmetric coupled MIS structure consisting of grounded crossbar at the interface between Si and SiO2 layer using the Finite-Difference Time-Domain (FDTD) method is presented. In order to reduce the substrate effects on the transmission line characteristics, a shielding structure consisting of grounded crossbar lines over time-domain signal has been examined. Symmetric coupled MIS transmission line parameters for even- and odd-mode are investigated as the functions of frequency, and the extracted distributed frequency-dependent transmission line parameters and corresponding equivalent circuit parameters as well as quality factor for the new MIS crossbar embedded structure are also presented. It is shown that the quality factor of the symmetric coupled transmission line can be improved without significant change in the characteristic impedance and effective dielectric constant.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.12
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• pp.35-41
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• 2011

In this paper, an analysis for a new substrate shielding symmetric coupled MIS structure consisting of grounded crossbar at the interface between Si and SiO2 layer using the Finite-Difference Time-Domain(FDTD) method is presented. In order to reduce the substrate effects on the transmission line characteristics, a shielding structure consisting of grounded crossbar lines over time-domain signal has been examined. Parameters of symmetric coupled MIS transmission line with various gaps between crossbars for even- and odd-mode are investigated as the functions of frequency, and the extracted distributed frequency-dependent transmission line parameters and corresponding equivalent circuit parameters as well as quality factor for the new MIS crossbar embedded structure are also presented. It is shown that the quality factor of the symmetric coupled transmission line can be improved without significant change in the characteristic impedance and effective dielectric constant.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.12 s.354
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• pp.83-88
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• 2006

In this paper, we propose a new cross bar embedded structure for improvement of attenuation characteristics along the different lossy media. A general characterization procedure based on the extraction of the characteristic impedance and propagation constant for analyzing a single MIS(Metal-Insulator-Semiconductor) transmission line used and an analysis for a new substrate shielding MIS structure consisting of grounded crossbars at the interface between Si and Sio2 layer using the Finite-Difference Time-Domain(FDTD) technique is used. In order to reduce the substrate effects on the transmission line characteristics, a shielding structure consisting of grounded cross bar lines over time-domain signal has been examined. The extracted, distributed frequency-dependent transmission line parameters as well as the line voltages and currents, and also corresponding equivalent circuit parameters have been examined as function of frequency. It is shown that the quality factor of the transmission line can be improved without significant changes in the characteristic impedance and effective dielectric constant.