• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.97-98
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• 2006

High current behaviors of extended drain n-type metal-oxide-semiconductor field effects transistor (EDNMOS) with double polarity source (DPS) for electrostatic discharge (ESD) protection are analyzed. Simulation based contour analyses reveal that combination of bipolar junction transistor operation and deep electron channeling induced by high electron injection gives rise to the second on-state. Therefore, the deep electron channel formation needs to be prevented in order to realize stable and robust ESD protection performance. Based on our analyses, general methodology to avoid the double snapback and to realize stable ESD protection is to be discussed.

• Journal of IKEEE
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• v.26 no.2
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• pp.196-204
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• 2022

Electrostatic discharge (ESD) protection devices of P-type embedded silicon-controlled rectifier (PESCR) structure were analyzed for high-voltage operating input/output (I/O) applications. Conventional PESCR standard device exhibits typical SCR characteristics with very low-snapback holding voltages, resulting in latch-up problems during normal operation. However, the modified device with the counter pocket source (CPS) surrounding N⁺ source region and partially formed P-well (PPW) structures proposed in this study could improve latch-up immunity by indicating high on-resistance and snapback holding voltage.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.3
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• pp.109-113
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• 2005

It has been reported that the failure phenomenon and variation of electrical characteristic due to the effect of electrostatic discharge(ESD) in silicon devices. But we had fess reports about the phenomenon due to the ESD in the compound semiconductors. So there are a lot of difficulty to the phenomenon analysis and to select the protection method of main circuits or the devices. It has not been reported that the relation between the ESD stress and GaN devices, which is remarkable to apply the operation in high temperature and high voltage due to the superior material characteristic. We studied that the characteristic variation of the AlGaN/GaN HEMT current, the leakage current, the transconductance(gm) and the failure phenomenon of device due to the ESD stress. We have applied the ESD stress by transmission line pulse(TLP) method, which is widely used in ESD stress experiments, and observed the variation of the electrical characteristic before and after applying the ESD stress. The on-current trended to increase after applying the ESD stress. The leakage current and transconductance were changed slightly. The failure point of device was mainly located in middle and edge sides of the gate, was considered the increase of temperature due to a leakage current. The GaN devices have poor thermal characteristic due to usage of the sapphire substrate, so it have been shown to easily fail at low voltage compared to the conventional GaAs devices.

• Journal of Satellite, Information and Communications
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• v.11 no.4
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• pp.21-26
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• 2016

The ESD(electrostatic discharge) protection performance of PPS(PMOS pass structure) embedded N-type silicon controlled rectifier(NSCR_PPS) device with different implant of channel blocking region was discussed for high voltage I/O applications. A conventional NSCR standard device shows low on-resistance, low snapback holding voltage and low thermal breakdown voltage, which may cause latch-up problem during normal operation. However, our proposed NSCR_PPS devices with modified channel blocking structure demonstrate the improved ESD protection performance as a function of channel implant variation. Therefore, the channel blocking implant was a important parameter. Since the modified device with CPS_PDr+HNF structure satisfied the design window, we confirmed the applicable possibility as a ESD protection device for high voltage operating microchips.

• Journal of the Korean Society of Safety
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• v.13 no.3
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• pp.80-87
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• 1998

This paper presents a study on the development of discharge model and computer program for assessing the risk of electrostatic discharge(ESD) of charged human body This ESD event is modelled as a two-body problem using spherical conductors, simulating the approach of a charged conductor (human body) to a second conductor (electronic equipment). The charge/discharge process for the model is formulated as a matrix of equations by Maxwell's method. Body potentials, energies and the charge transfer during a discharge are calculated. The developed program, based on the suggested scheme in this paper, is applied to a sample system. The results provide a better understanding of ESD event and demonstrate the usefulness of two-body model in practical applications.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.10a
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• pp.53-54
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• 2017

In this paper, we have studied the electrostatic discharge test for the battery protection circuit module in the lithium ion battery used as a smartphone battery which is used to prevent the explosion hazard due to overcharge, over discharge, and short-circuit. A lithium ion battery of S company was used as an experimental sample, and an ESD gun simulator compliant with IEC 61000-4-2 standard was used for electrostatic discharge injection. The contact discharge was applied to the various pins of the battery protection circuit module in increments of 2 kV in the range of 2 kV to 10 kV and in 5 kV increments in the range of 10 kV to 30 kV.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.4
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• pp.108-116
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• 2002

This paper presents the measurements and evaluation of voltage waveforms due to human electrostatic discharge(ESD). The principle of operation and design rule of a new device for measuring the ESD fast transient voltages with very fast rise time were described. Peak values and rise time of ESD voltages derived from a charged human body under a variety of experimental conditions were examined. The frequency bandwidth of the proposed voltage measuring system ranges from DC to 400[㎒]. The ESD voltage waveform is nearly equal to the ESD current waveform and the peak amplitude of ESD current waveform is roughly proportional to the ESD voltage in each experimental conditions. A rapid approach results in a discharge voltage with a faster initial rise time than for a slow approach. The voltages caused by direct finger ESDs have an initial slope with a relatively long, 10∼30[ns] rise time, but the amplitude is small. On the other hand, the voltages caused by direct hand/metal ESDs have a steep initial s1ope with 1 ∼3[ns] rise time, but an initial spike is very big. As a consequence, it was found that the ESD voltage and current waveforms strongly depend on the approach speed and material of intruder. These measurement results would be useful to design the ESD protective devices.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.10
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• pp.7-13
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• 1997

A modern electronic system located at a certain distance form the discharge may respond with unexpected sensitivity ot that phenomenon, even if the phenomenon is so slight as to have been ignored in the port. It has been found that electromagnetic wave energy is emitted as a results of this electrostatic discharge between metallic objects. In order to theoretically examine the peculiar phenomenon, we propose an analytical approach to model the indirect ESD effect. A soruce model is given here using the spark resistence presented by rompe-weizel. A model experiment for indirect eSD is also conducted to express ESD detection rate by the statistical estimation. We verify that the statistical estimations agree the theoretical curve resulted from the rompe-weisel resistence.

• Journal of the Korean Society of Safety
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• v.16 no.2
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• pp.57-62
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• 2001

In order to analyze the mechanism of semiconductor device damages by ESD, this paper adopts a new charged-device model(CDM), field-induced charged nudel(FCDM), simulator that is suitable for rapid routine testing of semiconductor devices and provides a fast and inexpensive test that faithfully represents ESD hazards in plants. The high voltage applied to the device under test is raised by the fie]d of non-contacting electrodes in the FCDM simulator. which avoids premature device stressing and permits a faster test cycle. Discharge current md time are measured and calculated The FCDM simulator places the device at a huh voltage without transferring charge to it, by using a non-contacting electrode. The only charge transfer in the FCMD simulator happens during the discharge. This paper examine the field charging mechanism, measure device thresholds, and analyze failure modes. The FCDM simulator provides a Int and inexpensive test that faithfully represents factory ESD hazards. The damaged devices obtained in the simulator are analyzed and evaluated by SEM Also the results in this paper can be used for to prevent semiconductor devices from ESD hazards.

• Journal of Satellite, Information and Communications
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• v.10 no.4
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• pp.1-5
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• 2015

The ESD(electrostatic discharge) protection performance of PPS(PMOS pass structure) embedded N-type silicon controlled rectifier(NSCR_PPS) device with different partial p-well(PPW) structure was discussed for high voltage I/O applications. A conventional NSCR_PPS standard device shows typical SCR-like characteristics with low on-resistance, low snapback holding voltage and low thermal breakdown voltage, which may cause latch-up problem during normal operation. However, our proposed NSCR_PPS devices with modified PPW_PGM(primary gate middle) and optimal CPS(counter pocket source) implant demonstrate the stable ESD protection performance with high latch-up immunity.