• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.943-946
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• 1997

Electropolishing is the controlled electrochemical removal of surface metal, resultmg in a brilliant appearance andimproved properties. Sometimes described as "reverse plating," the process has a leveling effect, which produces smoothnessand increased reflectivity. Unlike conventional mechanical finishing systems, the electropolishing does not smear, bend,stress or fracture the crystalline metal surface to achieve smoothness. Instead, electropolishing removes metal from thesurface producing a unidirectional pattern that is stress-free, microscopically smooth and often highly reflective. In addition,improved corrosion resistance and passivity are achieved on many ferrous and some non-ferrous alloys. Pure aluminium doesnot electropolish well, if at all, but most other alloys of aluminum electropolish excellently.Therefore, the aim of this study is to determine the characteristics of electropolishing aluminium alloy in term of currentdensity, machining time, temperature, electrode gap and workpiece surface measurementkpiece surface measurement

• Transactions of Materials Processing
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• v.33 no.4
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• pp.255-260
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• 2024

Utilization of additively manufactured parts in intended applications is limited by surface roughness. Roughness reduction in internal surface area of AM parts is exponentially more challenging. Reported methodologies for roughness reduction, result in material loss and limits the operational life of these parts. Herein, we explored electropolishing to reduce surface roughness of SLM manufactured 316L steel. Furthermore, the mass loss incurred during electropolishing is deduced as a function of polishing time. The change in roughness, wettability and surface passivation were studied and discussed in detail.

• Journal of the Korean Ceramic Society
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• v.33 no.10
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• pp.1170-1176
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• 1996

Porous silicon was prepared by anodic reaction. The process was controlled by current density and etching time an the thickness change and the room temperature PL was measured. The thickness of porous silicon was increased with etching time and was decreased after critical time. It was the same as increasing current density. It needed only 15 sec to electropolish the surface of porous silicon above current density 70 mA/cm2. We can understand that increasing etching time leads narrow size of Si column by porous silicon formation mechanism. And the sample with narrow Si column revealed PL blue shift. The specimens were heated in the range of 300-1000$^{\circ}C$ in order to see PL changes. The heat treatment was proceeded in H2 atmosphere vacuum system to avoid oxidation. The PL was disappeared above 600$^{\circ}C$. In high temperature some sintered Si columns were observed in SEM photography. There was no difference of -Hx bonds which was suggested as evidence of hydride compounds luminescence between 500$^{\circ}C$ and 600$^{\circ}C$. Thus it is concluded that quantum confinement is major factor of PL of porous silicon.

• Journal of the Korean Society of Industry Convergence
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• v.7 no.3
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• pp.259-263
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• 2004

In the manufacture progress of LCD or semiconductor, there are used many kinds of gas like erosion gas, dilution gas, toxic gas as a progress which used these gas there are required high puritize to increase accumulation rate of semiconductor or LCD materials work progress of semiconductor or LCD it demand many things like the material which could minimize metallic dust that could be occured by reaction between gas and transfer pipe laying material, illumination of the surface, emition of the gas, metal liquation, welding etc also demand quality geting stricted. Material-Low-sulfur-contend (0.007-0010), vacuum-arc-remelt(VAR), seamless, high-purity tubing material is recommend for enhance welding lower surface defect density All wetted stainless steel surface must be 316LSS elecrto polishinged with ${\leq}0.254{\mu}m$($10.0{\mu}in$) Ra average surface finish, $Cr/Fe{\geq}1.1$ and $Cr_2O_3$ thickness ${\geq}25{\AA}$ From the AES analytical the oxide layer thickness (23.5~36 angstroms silicon dioxide equivalent) and chromum to iron ratios is similar to those generally found on electropolished stainless steel., molybdenum and silicon contaminants ; elements characteristic of stainless steel (iron, nickel and chromium); and oxygen were found on the surface Phosphorus and nitrogen are common contaminants from the electropolish and passivation steps.