• 전기전자학회논문지
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• 제12권2호
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• pp.110-117
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• 2008

본 연구는 전력용 스위칭 소자로 널리 활용되고 있는 IGBT(Insulated Gate Bipolar Transistor)소자로서 NPT(Non Punch Through) IGBT 구조에 기반 한 새로운 구조의 IGBT를 제안하였다. 제안된 구조는 기존 IGBT 구조의 P-베이스 영역 우측 부분에 N+를 도입함으로 N-드리프트 영역의 정공분포를 N+영역으로 밀집시켜 턴-오프 시 정공의 흐름을 개선, 기존 구조보다 더 빠른 턴-오프 시간과 더 낮은 순방향 전압강하를 갖는 구조이다. 또한 P+를 게이트 우측 하단에 형성함으로써 순방향 전압 강하 특성을 개선시키기 위해 도입한 캐리어 축적 층인 N+에 의해 발생하는 낮은 래치-업 특성과 낮은 항복 전압 특성을 개선시킨 구조이다. 시뮬레이션 결과 제한된 구조의 턴-오프와 순방향 전압강하는 기존 구조대비 각각 0.3us, 0.5V 향상된 특성을 보였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.383-386
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• 2004

The one of important requisites for fabricating molecular electronic device is the single crystal direction of bottom substrate nowadays. [1,2]. We obtain the optimum SAM result when the Au crystal is <111> structure for Self-Assembled molecular. To get the <111> crystal Au, we generally repeat heating and cooling course after evaporating Au [3]. However, we can fabricate <111> crystal Av thin film except post treatment because we simultaneously evaporate and anneal using Effusion Cell. In this paper, we study on thin film growth of <111> crystal Au as bottom electrode which is essential for Self-Assembled molecular by Effusion Cell and analyze crystal structure, thickness, surface conductivity and so on as each process condition.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.395-398
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• 2004

We developed an a-Si TFT-LCD panel with integrated gate driver circuit using a standard 5-MASK process. To minimize the effect of the a-Si TFT current and LC's capacitance variation with temperature, we developed a new a-Si TFT circuit structure and minimized coupling capacitance by changing vertical architecture above gate driver circuit. Integration of gate driver circuit on glass substrate enables single chip and 3-side free panel structure in a-Si TFT-LCD of QVGA(240$^{\ast}$320) resolution. And using double ASG structure the dead space of TFT-LCD panel could be further decreased.

• Transactions on Electrical and Electronic Materials
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• 제3권4호
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• pp.32-35
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• 2002

In this work, we test electrode material of TFD (Thin Film Diode) device subject to flexible substrate. Al, that is ductile metal, was proper for flexible electrode to fabricate flexible display. The fabricated devices had symmetric electrode structure on both sides of insulation layer. The electrode was made of ductile Al so as to reduce the mismatch of properties between the electrode and substrate. The TFD device was successfully fabricated applying our own etch-free process. Electrical properties were improved by post-annealing.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 B
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• pp.1261-1263
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• 2005

The micro permanent magnet(PM) type stewing motor preferred solution for many small electronics position determination devices since it is small in size. Thus, there are growing demands for PM type stepping motor that greater mechanical output, smaller size. But, the design of the it, having high performance and small size is very difficult because of its complex mechanical structure. This paper deals with a development of the newly structured micro PM type stepping motor with claw-poles. We introduced the small-sized PM type stepping motor that has new structure and analyzed the magnetic characteristic of it versus general type model using 3-D finite element analysis(FEA).

• 한국전기전자재료학회논문지
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• 제35권5호
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• pp.452-458
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• 2022

The electro-thermal erasing (ETE) configuration utilizes Joule heating intentionally generated at word-line (WL). The elevated temperature by heat physically removes stored electrons permanently within a very short time. Though the ETE configuration is a promising next generation NAND flash memory candidate, a consideration of power efficiency and erasing speed with respect to device structure and its scaling has not yet been demonstrated. In this context, based on 3-dimensional (3-D) thermal simulations, this paper discusses the impact of device structure and scaling on ETE efficiency. The results are used to produce guidelines for ETEs that will have lower power consumption and faster speed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.288-291
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• 2008

This paper describes a new S-PVA cell structure which achieves enhanced contrast ratio by adopting a step-like patterned common electrode between the high sub-pixel and low sub-pixel electrodes without loss of transmittance. A 24-inch panel was developed for monitor applications and measured contrast ratio and white luminance were over 2500:1 and 400cd/m2, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.208-210
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• 2008

We have developed a LCD Panel that form storage capacitance for pixels between pixel electrode of bottom glass and common electrode of top glass. This method could make higher transmission and higher production yield than before by removing storage electrode line and capacitance on the bottom glass by simplifying bottom pixel structure.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.295-298
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• 2008

We developed a novel PVA pixel design for mobile application with excellent off-axis image quality and optical performance by introducing Active Level Shift technology and optimizing pixel structure. Our new pixel design enables better off-axis image quality without sacrificing other optical properties compared with a conventional mPVA structure.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1006-1009
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• 2006

The chemical structure of the interface between Ag with $Li_2O$ and tri (8-hydroxyquinoline) aluminum (Alq) was investigated by using in-situ characterization of x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). $Li_2O$ on Ag had lower barrier height than LiF on Ag. XPS and UPS results show the interaction between $Li_2O$ and Alq leads to gap state formation in HOMO of Alq.