• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.149-152
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• 2000

AC impedance measurements on poly-p-phenylenevinylene (PPV) LEDs in the frequency range between 10 Hz and 10$\^$6/ Hz were carried out. The complex-plane impedance spectra indicate that PPV devices can be represented by equivalent circuits that corresponds to the bulk and interfacial regions at high and low frequencies, respectively. As a result of complex impedance analysis through the separation of bulk and interfacial region impedances, increase of forward bias in Al/PPV/ITO devices gave rise to relative decrease of the interfacial region impedance. Above the electric field of 10$\^$6/ V/cm the PPV device showed a space charge limited current (SCLC) conduction. The dependence of the transport mechanism and dielectric properties on the applied bias voltage is discussed.

• Electrical & Electronic Materials
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• v.7 no.5
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• pp.409-416
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• 1994

A double layered photoreceptor using phthalocyanine dye was made by dip-coating method. The under cutting layer(UCL) was coated with A1$\_$2/O$\_$3/ or polyamide, and the charge generation layer(CGL) was formed by .tau.-type metal-free phthalocyanine. The oxadiazole was used as a charge transport layer(CTL) and polycarbonate and poly(vinyl butyral) was employed as a host polymer. The .tau.-H$\_$2/Pc had an absorption peak around 780nm, which coincided with the emitting wavelengths of GaAlAs diode lasers. Maximum charge acceptance of CTL that gives thickness of 12.mu.m was -900V by corona charge of -6.0kV. In photo-induced discharge measurements, residual potential was less than -20V and sufficient for ordinary use, and sample films using of poly(vinyl butyral) was showed good charge retention. In printing test, drum that was employed polycarbonate as a host polymer showed the good print quality.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.668-672
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• 2004

Upon Debye's dielectric relaxation theory, we tried simple determination method of trap level in organic EL materials. From dielectric measurements in the 20 Hz - 1 MHz frequency range and in the 150 K - 320K temperature range, the depth of traps in Alq$_3$ filled with remaining electrons was determinated. Comparing to other determination techniques like TSL, or TL, the apparatus all we need is just simple LCR meter, thermometer and cooling method(liquid nitrogen). The mean activation energy is about 0.20 eV. It is in good agreement with previous determinations by other techniques like TSL. This results consolidate the validity of Burrow's transport mechanism model. Further intensified experiment with UV light on the dielectric absorption(Photodipolair effect) was nevertheless disturbed by the photoconductivity component.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.370-373
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• 2001

Temperature-dependent current-voltage characteristics of Organic Light-Emitting Diodes (OLEDs) were studied. The OLEDs were based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) as a hole transport and trois(8-hydroxyquinoline) aluminum(Alq$_3$) as an electron transport and emissive material. The current-voltage characteristics were measured in the temperature range of 10[K] and 300[K]. A conduction mechanism in OLEDs was interpreted in terms of tunneling and trap-filled limited current.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.678-681
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• 2011

We have investigated the effect of organic thin film on the driving voltage of OLED (organic light emitting diode) by inserting a 5 nm thick 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) or triphenylphosphineoxide ($Ph_3PO$) between tris-(8-hydroxyquinoline)aluminum ($Alq_3$) electron transport layer and 4,4'-bis(2,2'-diphyenylvinyl)-1,1'-biphenyl (DPVBi) emission layer. The device with 5 nm thick $Ph_3PO$ layer exhibited higher maximum current efficiency and lower driving voltage than the device with BCP layer, resulting from better electron injection from $Alq_3$ to DPVBi in the device with $Ph_3PO$ layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.343-344
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• 2007

Carrier mobility was measured using time-of-flight (TOF) measurements to investigate the transport properties of holes and electrons in stabilized a-Se film. A laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of a-Se with thickness of $400\;{\mu}m$. The measured transit times of hole and electron were about $8.73\;{\mu}s\;and\;229.17\;{\mu}s$, respectively. The experimental results showed that the hole and electron drifting mobility were $0.04584\;cm^2V^{-1}S^{-1}\;and\;0.00174\;cm^2V^{-1}s^{-1}\;at\;10\;V/{\mu}m$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.507-508
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• 2007

Temperature-dependent current-voltage characteristics of Organic Light-Emitting Diodes(OLEDs) were studied. The OLEDs were based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) as a hole transport and tris(8-hydroxyquinoline) aluminum($Alq_3$) as an electron transport and emissive material. The current-voltage characteristics were measured in the temperature range of 10[K] and 300[K]. A conduction mechanism in OLEDs was interpreted in terms of tunneling and trap-filled limited current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.934-941
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• 2000

We measured the electron transport coefficients, the electron drift velocity W and the longitudinal diffusion coefficient $D_{L}$ in the 0.526% and 5.05% $C_{3}F_{8}$-Ar mixtures over the E/N range from 0.01 Td to 100 Td by the double shutter drift tube, and compared the measured results by Hunter et al. with those. We determined the inelastic collision cross sections for the $C_{3}F_{8}$ molecule by the comparison of the present measurements and the calculation of electron transport coefficients in the $C_{3}F_{8}$-Ar mixtures by using a multi-term Boltzmann equation analysis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.376-382
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• 2000

We successfully fabricated OLED(Organic Light Emitting Diodes) with Al cathodes electrode deposited by the DC magnetron sputtering. The effects of a controlled Al cathode layer of an Indium Tin Oxide (ITO)/blended single polymer layer (PVK Bu:PBD:dye)/Al light emitting diodes are described. The PVK (Poly(N-vinylcarbazole)) and Bu-PBD (2-(4-biphenyl-phenyl)-1,3,4-oxadiazole) are used hole transport polymer and electron transport molecule respectively. We found that both current injection and electroluminescence output are significantly different with a variable DC sputtering power. The difference is believed to be due to the influence near the blended polymer layer/cathode interface that results from the DC power and H$\sub$2//O in a chamber. And DC sputtering deposition is an effective way to fabricate Al electrodes with pronounced orientational characteristics without damage occurring to metal-organic interface during the sputtering deposition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.31-36
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• 2002

In this work $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}:Co^{2+}$ single crystals were grown by the chemical transport reaction method and the structure of $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}:Co$ single crystals were monoclinic structure. The temperature dependence of optical energy gap was fitted well to Varshni equation. Also, the entropy, enthalpy and heat capacity were deduced from the temperature dependence of optical energy gap.