• Journal of the Korean Chemical Society
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• 제39권7호
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• pp.501-507
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• 1995

The electronic structure of cis-$[Cr(cyclam)Cl_2]Cl$ has been investigated by the emission and excitation spectroscopy at 77K, and infrared and visible spectroscopy at room temperature. The ten electronic transitions due to spin-allowed and spin-forbidden are assigned. The zero-phonon line in the excitation spectrum splits into two components by $139\;cm^{-1}$, and it can be reproduced by modern ligand field theory. According to the results of ligand field analysis, we can confirm that nitrogen atoms of the cyclam ligand have a strong ${\sigma}$-donor character, but chloride ligand has weak ${\sigma}-$ and ${\pi}-$donor properties toward chromium(III) ion.

• Electrical & Electronic Materials
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• 제10권2호
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• pp.105-112
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• 1997

Undoped and Co$^{2+}$-doped Zn$_{4}$GeSe$_{6}$ single crystals were grown by the Chemical Transport Reaction method using iodine as a transporting agent. The crystal structure of these compounds determined by X-ray diffraction analysis was monoclinic structure. The direct energy gaps of these compounds were measured and the temperature dependence of the optical energy gap were closely investigated over the temperature range 10-290K. The temperature dependence of the optical energy gap is well presented by the Varshni equation. Also the optical absorption peaks of Zn$_{4}$GeSe$_{6}$ :Co$^{2+}$ single crystal observed, centered at 5437, 6079, 7142, 12950, 13462, 14786 and 15735 $cm^{-1}$ /, can be explained in terms of the electronic transitions of Co$^{2+}$ ions located at Td symmetry of the host materials. According to the crystal-field theory, the crystal-field, Racah and spin-orbit coupling parameters obtained from the absorption bands are given by Dq = 361$cm^{-1}$ /, B = 655$cm^{-1}$ / and .lambda. = 284$cm^{-1}$ / respectively.ively.

• Journal of Power Electronics
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• 제17권4호
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• pp.1097-1108
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• 2017

Accurate calculation of the conduction and switching losses of a power electronic converter is required to achieve the efficiency of the converter. Such calculation is also useful for computing the junction temperature of the switches. A few models have been developed in the articles for calculating the switching energy losses during switching transitions for the given values of switched voltage and switched current. In this study, these models are comprehensively reviewed and investigated for the first time for ease of comparison among them. These models are used for calculating the average amount of switching power losses. However, some points and details should be considered in utilizing these models when switched current or switched voltage presents time-variant and alternative quantity. Therefore, an applicable technique is proposed in details to use these models under the above-mentioned conditions. A proper switching loss model and the presented technique are used to establish a new and fast method for obtaining the average switching power losses in any type of power electronic converters. The accuracy of the proposed method is evaluated by comprehensive simulation studies and experimental results.

• Proceedings of the KIEE Conference
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1980-1982
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• 1999

Conductive Langmuir-Blodgett(LB) films have recently attracted much interest from the viewpoint of ultrathin film conductors at the molecular level. The result shows that the Maxwell-displacement-current (MDC) measuring technique is useful in the detection of phase-transitions over the entire range of molecule areas. In this parer, electrical properties of PBDG Langmuir(L) films were investigated using a displacement current measuring technique with pressure stimulation. Displacement current was generated When the Spread volume $150{\mu}{\ell}$ and compression velocity was about 30, 40, 50 mm/min. In the result, it is known that current is generated of higher current peek as compression velocity become faster.

• Transactions on Electrical and Electronic Materials
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• 제9권6호
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• pp.265-272
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• 2008

In this paper, AC losses of long wire Bi-2223 tapes with different twist pitch of superconducting core were fabricated, measured and analyzed. These samples produced by a powder-in-tube method are multi-filamentary tape with Ag matrix. Also, it's produced by non-twist. The critical current measurement was carried out under the environment in Liquid nitrogen and in zero field by 4-prob method. And the Magnetic measurement was carried out under the environment of applied time-varying transport current by transport method. From experiment, the susceptibility measurements were conducted while cooling in a magnetic field. Flux loss measurements were conducted as a function of ramping rate, frequency and field direction. The AC flux loss increases as the twist-pitch of the tapes decreased, in agreement with the Norris Equation. Neutron-diffraction measurements have been carried out investigate the crystal structure, magnetic structures, and magnetic phase transitions in Bi-2223([Bi, Pb]:Sr:Ca:Cu:O).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.66-66
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• 2009

The photoconductive $CdGa_2Se_4$ layer was grown through the hot wall epitaxy method. From the photocurrent (PC) measurements, the three peaks in the PC spectra were associated with the band-to-band transitions. The PC intensities were observed to decrease with decreasing temperature. The valence-band splitting on $CdGa_2Se_4$ was also observed by means of the PC spectroscopy. The crystal field splitting and the spin orbit splitting turned out to be 0.1604 and 0.4179 eV at 10 K, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.47-47
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• 2009

The photoconductive $CdGa_2Se4$ layer has been investigated using photocurrent (PC) spectroscopy as a function of temperature. Three peaks corresponding to the band-to-band transitions were observed in the PC spectra for all temperature ranges. Also, contrary to our expectation, the PC intensities decreased with decreasing temperatures. From the relation of log $J_{ph}$ vs 1/T, where $J_{ph}$ is the PC density, two dominant levels by the exponential variation of the PC with varying temperature were observed, one at high temperatures and the other at low temperatures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.146-147
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• 2009

$CuGaSe_2$ (CGS) layers were grown by the hot wall epitaxy method. The optimum temperatures of the substrate and source for growth turned out to be 450 and $610^{\circ}C$, respectively. Based on the absorption measurement, the band-gap variation of CGS was well interpreted by the Varshni's equation. By analyzing these emissions, a band diagram of the observed optical transitions was obtained. From the solar cell measurement, an 11.17 % efficiency on the n-CdS/p-CGS junction was achieved.

• Journal of the Korean Society for Nondestructive Testing
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• 제32권2호
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• pp.131-141
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• 2012

A field theoretical approach to deformation and fracture of solid-state material is outlined, and its application to diagnosis of deformational status of metal specimens is discussed. Being based on a fundamental physical principle known as local symmetry, this approach is intrinsically scale independent, and capable of describing all stages of deformation on the same theoretical foundation. This capability enables us to derive criteria that can be used to diagnose transitions from the elastic to plastic regime, and the plastic to fracturing regime. For practical applications of these criteria, an optical interferometric technique known as electronic speckle-pattern interferometry is proved to be quite powerful; it is able to visualize the criteria as a whole image of the object on a real-time basis without numerical processing. It is demonstrated that this method is able to reveal loading hysteresis as well.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제21권12호
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• pp.1057-1062
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• 2008

The ${\alpha}-In_2S_3:Co^{2+}$ single crystal with a good quality and stabilized property were gained successfully by the CTR(Chemical Transport Reaction)method. XRD analysis showed that the grown single crystals were cubic structure. The optical absorption spectra of ${\alpha}-In_2S_3:Co^{2+}$ single crystal showed impurity absorption peaks due to cobalt impurity. These impurity absorption pesks were assigned to the ligand transition between the split energy levels of $Co^{2+}$ ions sited in $T_d$ symmetry of these semiconductor host lattice.