• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.159-165
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• 2016

Recently, active efforts are being made for future Si CMOS technology by various researches on emerging devices and materials. Capability of low power consumption becomes increasingly important criterion for advanced logic devices in extending the Si CMOS. In this work, a junctionless field-effect transistor (JLFET) with ultra-thin poly-Si (UTP) channel is designed aiming the sub-10-nm technology for low-power (LP) applications. A comparative study by device simulations has been performed for the devices with crystalline and polycrystalline Si channels, respectively, in order to demonstrate that the difference in their performances becomes smaller and eventually disappears as the 10-nm regime is reached. The UTP JLFET would be one of the strongest candidates for advanced logic technology, with various virtues of high-speed operation, low power consumption, and low-thermal-budget process integration.

• Electrical & Electronic Materials
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• v.11 no.1
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• pp.80-85
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• 1998

• Electrical & Electronic Materials
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• v.22 no.5
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• pp.38-45
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• 2009

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.436-439
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• 2010

SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this work, we report the effect of the interface states ($Q_f$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized by using a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. When the $SiO_2$/SiC interface charge decreases, power losses and switching time also decrease, primarily due to the lowered channel mobilities. High density interface states can result in increased carrier trapping, or more recombination centers or scattering sites. Therefore, the quality of $SiO_2$/SiC interfaces has a important effect on both the static and transient properties of SiC MOSFET devices.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.12C
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• pp.1201-1207
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• 2006

In this paper, we say the adaptive shading correction system supporting multi-resolution for mobile camera. The shading effect is caused by non-uniform illumination, non-uniform camera sensitivity, or even dirt and dust on glass (lens) surfaces. In general this shading effect is undesirable [1-3]. Eliminating it is frequently necessary for subsequent processing and especially when quantitative microscopy is the fine goal. The proposed system is available on thirty nine kinds of image resolutions scanned by interlaced and progressive type. Moreover, the system is using forty kinds of continuous quadratic equations instead of using the piece-wise linear curve which is composed of multiple line segments. Finally, the system could correct the shading effect without discontinuity in any image resolution. The proposed system is implemented in VLSI with cell library based on Hynix $0.25{\mu}m$ CMOS technology.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.446-449
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• 2002

The video based electronic portal imaging device (EPID), which could display the portal image in near real time, was implemented to verify treatment position error in FSRT(Fractionated Stereotatic Radiation Therapy) instead of a portal film. Also, Developed FSRT system was composed of the stereotactic frame, frame mounting system and collimator cones. The verification of treatment position is very crucial in special therapies like FSRT. In general, the FSRT uses high dpse rate at small field size for treating small intracranial lesions. To evaluate quantitative positioning errors in FSRT, we used the first FSRT image as reference image and obtained the second FSRT image that was moved 2mm intentionally and detected intracranial contours after image processing. The generated 2mm error could be verified by overlapping only contours of two images. Through this study, the radiation treatment efficiency could be improved by performing precise radiation therapy with a developed video based EPID and FSRT.

• Journal of the Korea Society of Computer and Information
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• v.24 no.6
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• pp.125-133
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• 2019

This study aimed to investigate the political system related to the Electronic Government Law by analyzing the process of the common initiative of the law. To achieve the goal, this study applied the method of social analysis and sugessted the proper role of the assembly for realizing the electronic government and its control. The data were gathered from the bill information service of the national assembly. Netminer 4.0 was used for refining and analyzing data. The results are as follows. First, by analyzing three centrality(degree, betweenness, and eigenvector) of assembly member, the network effect of the powered party and reelected members were revealed as strong in the network. Second, through the component analysis, 5 sub-network has shown in total. The sub-networks showed two distinctive difference between two big parties. By the difference, members in two parties showed different characteristics in constituting communities and the effect of the powered party revealed as strong and clear. Based on the result, this study demonstrated the necessity of social solidarity rather than solipsism in committing common initiative. And a chronological research is need to anlayze $18^{th}$ and $19^{th}$ assembly to verify the effect of the powered party in prospect study.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.617-620
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• 1999

In this study, the polarization e(fecal and the birefringence effect of amorphous germanium (a-Ge) thin films were investigated by using linearly polarized He-Ne laser beam. The a-7e thin films were deposited on the quarts substrate by plasma enhanced chemical vapor deposition (PECVD) and thermal vacuum evaporation In order to obtain the optimum grating arrays, inorganci resists such as Si$_3$N$_4$ and a-Se$_{75}$ Ge$_{25}$ , were prepared with the optimized thickness by Monte Carlo (MC) simulation. As the results of MC simulation, the thickness ofa-Se$_{75}$ Ge$_{25}$ resist was determined with Z$_{min}$ of 360$\AA$ . The resists were exposed to Ga$^{+}$-FIB with accelerating energies of 50 keV, developed by wet etching, and a-Ge thin film was etched by reactive ion-etching (RIE). Finally, we were obtained grating arrays which grating width and linewidth are 0.8${\mu}{\textrm}{m}$, respectively and we studied the polarization and birefringence effect in transmission grating array made of high refractive amorphous material, and the applicability as waveplates and polarizers in optical device.e.e.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.24-25
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• 2008

The effect of heat treatment in $HfO_2$ as charge trap with $SiO_2/Si_3N_4/SiO_2$ as tunnel oxide layer in capacitors has been investigated. Rapid thermal annealing (RTA) were carried out at the temperature range of 600 - $900^{\circ}C$. It is found that all devices carried out heat treatment have large threshold voltage shift Especially, device performed heat treatment at $900^{\circ}C$ has been confirmed the largest memory window. Also, Threshold voltage shift of device used conventional $SiO_2$ as tunnel oxide layer was smaller than that with $SiO_2/Si_3N_4/SiO_2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.4
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• pp.231-236
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• 2016

A three-electrode type reflective display (electronic paper) is designed to apply an independent electric field to each three electrodes of the cell including two electric-type of particles and electrically neutral color fluid, so single color realization is possible. In particular, the movement of particles and optical properties are decided by the electric field between two electrodes on the lower substrate. So, the effect of electric field by the distance between two electrodes on the lower substrate is studied with electrode spacing with $10{\mu}m$, $15{\mu}m$, $20{\mu}m$, and $25{\mu}m$. By our experimentation, the driving voltage induces more reliable movement of charged particles and the optical properties as compared with the threshold voltage. We ascertain the single color realization and non-inverted particle separation is possible. So the more desirable optical properties are observed in case of the short electrode like $10{\mu}m$.