• 제목/요약/키워드: Electronic effect

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Study on the Thermal Transient Response of TSV Considering the Effect of Electronic-Thermal Coupling

  • Li, Chunquan;Zou, Meng-Qiang;Shang, Yuling;Zhang, Ming
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.3
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    • pp.356-364
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    • 2015
  • The transmission performance of TSV considering the effect of electronic-thermal coupling is an new challenge in three dimension integrated circuit. This paper presents the thermal equivalent circuit (TEC) model of the TSV, and discussed the thermal equivalent parameters for TSV. Si layer is equivalent to transmission line according to its thermal characteristic. Thermal transient response (TTR) of TSV considering electronic-thermal coupling effects are proposed, iteration flow electronic-thermal coupling for TSV is analyzed. Furthermore, the influences of TTR are investigated with the non-coupling and considering coupling for TSV. Finally, the relationship among temperature, thickness of $SiO_2$, radius of via and frequency of excitation source are addressed, which are verified by the simulation.

Dependence by the electric field effect in the photoinduced anisotropy(PA) of the chalcogenide thin film. (칼코게나이드 박막에서의 광유기 이방성(PA)의 전계효과 의존성)

  • Jang, Sun-Joo;Park, Jong-Hha;Yeo, Choel-Ho;Park, Jung-Il;Lee, Young-Jong;Chung, Hong-Bay
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1500-1502
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    • 2000
  • In this study, we have investigated the photoinduced anisotropy (PA) phenomena by the assisted. electric field effect on $As_{40}Ge_{10}Se_{15}S_{35}$ thin films. Investigation of photoinduced anisotropy on the assisted electric field effect was carried out using a He-Ne laser beams (inducing and probing beams) illuminating the same area of the thin film. To investigate the effect of electric field, various bias voltages applied. The result is shown the photoinduced anisotropy dependence on electric field. Also. we obtained the property of photoinduced anisotropy in the electric field effects by various voltages.

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The Effect of Obstacle Number, Shape and Blockage Degree in Flow Field of PEMFC on its Performance

  • Zongxi Zhang;Xiang Fan;Wenhao Lu;Jian Yao;Zhike Sui
    • Journal of Electrochemical Science and Technology
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    • v.15 no.1
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    • pp.132-151
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    • 2024
  • Proton exchange membrane fuel cell (PEMFC) has received extensive attention as it is the most common hydrogen energy utilization device. This research not only investigated the effect of obstacle number and shape on PEMFC performance, but also studied the effect of the blockage degree in the channel of PEMFC on its performance. It was found that compared with traditional scheme, longitudinally distributed obstacles scheme can significantly promote reactants transfer to catalyst layer, and the blockage degree in the channel effect PEMFC performance most. The scheme with 10 rectangular obstacles in single channel and 60% channel blockage had the best output performance and the most uniform distribution of reactants and products. Obstacle height distribution can significantly affect PEMFC performance, the blockage degree in the whole basin was large, particularly as the channel was blocked to higher degree in region 2 and region 3, higher net power density and better mass transfer effect can be obtained. Among them, the fuel cell with the blockage degree of 40%, 60% and 60% in region 1, region 2 and region 3 have the best PEMFC output performance and mass transfer, the net power density was 29.8% higher than that of traditional scheme.

Diode Embedded AlGaN/GaN Heterojuction Field-Effect Transistor

  • Park, Sung-Hoon;Lee, Jae-Gil;Cho, Chun-Hyung;Choi, Yearn-Ik;Kim, Hyungtak;Cha, Ho-Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.2
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    • pp.215-220
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    • 2016
  • Monolithically integrated devices are strongly desired in next generation power ICs to reduce the chip size and improve the efficiency and frequency response. Three examples of the embedment of different functional diode(s) into AlGaN/GaN heterojunction field-effect transistors are presented, which can minimize the parasitic effects caused by interconnection between devices.

The Protection Effect of Lightning Surge for electronic Equipments According to Installation of Surge Protective Device and Earth Leakage Breaker (서지보호소자와 누전차단기 설치에 따른 기기의 뇌보호 효과)

  • Lee, Suck-Woo;Ko, Yeon-Sung;Yeo, Dong-Goo;Seo, Ho-Joon;Rhie, Dong-Hee
    • Proceedings of the KIEE Conference
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    • 2005.11a
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    • pp.90-92
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    • 2005
  • Lightning surge damages of low voltage equipments in building are increasing due to increase in electrical and communication networks in the information-oriented society. And electronic equipments contained electrical circuits with semiconductor are very weak against lightning surge. The surge protective devices for electronic circuit in electronic equipments and AC power lines are becoming more widely. To achieve effective method of surge protection, there are needs for correlation between lightning surge protective effect of electronic equipment and installation method of surge protective device. This paper describes as a result of experiments for correlation between lightning surge protective effect and installation of surge protective device and Earth Leakage Breaker.

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Effects of Mobility-Gap States on the Performance of a-Si:H Field-Effect Transistors (이동도갭 상태들의 수소화된 비결정 실리콘 전계효과 트랜지스터 성능에 대한 영향)

  • 제갈장
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.11a
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    • pp.52-57
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    • 1995
  • An accurate and efficient single-integral semi-numerical model is developed and applied to analyse effects of localized electronic states in the mobility gap on the drain-current versus gale-voltage characteristics of hydrogenated amorphous field-effect transistors. It is shown that the low-density deep-gap states distributed in the midgap also sensitively and largely influence the device electronic performance as well as well as the large-density tail states distributed near the conduction band edge.

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Substitution Effect on Electronic Transition of Bi-substituted Benzyl-type Radicals: Symmetric Substitution

  • Ahn, Hyeon-Geun;Lee, Gi-Woo;Kim, Tae-Kyu;Lee, Sang-Kuk
    • Bulletin of the Korean Chemical Society
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    • v.28 no.11
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    • pp.1993-1995
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    • 2007
  • A substitution effect on the electronic transition of bi-substituted benzyl-type radicals was discovered. The origin of the electronic D1 → D0 transition of benzyl-type radicals was red-shifted upon substitution to the benzene ring. For symmetric bi-substituted benzyl-type radicals, it was found that the predicted shift obtained from mono-substituted benzyl-type radicals agreed well with the observation. The reason for this agreement is believed that the substituent contributes independently to the electronic energy. The substitution effect was applied to the symmetric bi-substituted difluoro-, dichloro- and dimethylbenzyl radicals.

Magnetic Suspension Effect of BiPbSrCaCuO Superconductor (Bi계 초전도체의 Magnetic Suspension)

  • 이상헌
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.101-103
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    • 2001
  • Suspension effect has been studied by using superconductor of BiPbSrCaCuO ceramics containing Ag$_2$O It has been cleared that Ag$_2$O acts as pinning center which plays an important role to the suspension effect. Magnetic repulsive force which affects a superconductor located in magnetic flux from toroidal magnet has been investigated. It has been concluded that the suspension effect arises from the interaction between the pinning effect and the diamagnetic effect.

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Analysis on the Effect of Operating Conditions on the Thermal Response of Electronic Assemblies during Infrared Reflow Soldering (적외선 리플로 솔더링시 작동조건이 전자조립품의 열적반응에 미치는 영향 분석)

  • Kim, Sung-Kwon;Son, Young-Seok;Shin, Jee-Young
    • Proceedings of the KSME Conference
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    • 2004.11a
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    • pp.1063-1068
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    • 2004
  • A numerical study is performed to predict the effect of operating conditions on the thermal response of electronic assemblies during infrared reflow soldering. The multimode heat transfer within the reflow oven as well as within the electronic assembly is simulated, and the predictions illustrate the detailed thermal responses. Parametric study is performed to determine the thermal response of electronic assemblies to various conditions such as conveyor speed, exhaust velocity, and component emissivity. The predictions of the detailed electronic assembly thermal response can be used in selecting the oven operating conditions to ensure proper soldering and minimization of thermally-induced electronic assembly stresses.

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Modeling and Controller Design of the Electronic Wedge Brake (Electronic Wedge Brake의 모델링 및 제어기 설계)

  • Han, Kwang-Jin;Huh, Kun-Soo
    • Transactions of the Korean Society of Automotive Engineers
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    • v.20 no.1
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    • pp.112-118
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    • 2012
  • The electronic wedge brake is one of the brake-by-wire systems with a self-energizing effect. The electronic wedge brake has faster response than the conventional hydraulic brake and requires only about one-tenth the power to operate. However, the electronic wedge brake cannot be implemented unless the self-energizing effect is reliably controlled. The self-energizing mechanisms may result in unintentional lock up and are very sensitive to environment and parametric variations of the friction coefficient. In this study, the electronic wedge brake is modeled into dynamic equations, and a sliding mode controller is designed based on the model. The performance of the proposed controller is verified in simulations.