• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.285.2-285.2
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• 2008

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권5호
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• pp.682-687
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• 2014

We have performed reverse gate bias stress tests on AlGaN/GaN-on-Si Heterostructure FETs (HFETs). The shift of threshold voltage ($V_{th}$) and the reduction of on-current were observed from the stressed devices. These changes of the device parameters were not permanent. We investigated the temporary behavior of the stressed devices by analyzing the temperature dependence of the instabilities and TCAD simulation. As the baseline temperature of the electrical stress tests increased, the changes of the $V_{th}$ and the on-current were decreased. The on-current reduction was caused by the positive shift of the $V_{th}$ and the increased resistance of the gate-to-source and the gate-to-drain access region. Our experimental results suggest that electron-trapping effect into the shallow traps in devices is the main cause of observed instabilities.

• Transactions on Electrical and Electronic Materials
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• 제14권4호
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• pp.203-207
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• 2013

P-type Si wafers were dipped in HF solution. The minority carrier lifetime (lifetime) increased after HF treatment due to the hydrogen termination effect. To investigate the film passivation effect, PECVD was used to deposit $SiN_x$ on both HF-treated and untreated wafers. $SiN_x$ generally helped to improve the lifetime. A thermal process at $850^{\circ}C$ reduced the lifetime of all wafers because of the dehydrogenation at high temperature. However, the HF-treated wafers showed better lifetime than untreated wafers. PERCs both passivated and not passivated by HF treatment were fabricated on the rear side, and their characteristics were measured. The short-circuit current density and the open-circuit voltage were improved due to the effectively increased lifetime by HF treatment.

• 대한전자공학회논문지SD
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• 제37권8호
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• pp.57-66
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• 2000

비대칭 광섬유 커플러 ADF(add/drop filter)의 필터링 특성을 새로운 연산자 분리 시영역 모델을 이용해서 해석하였다. 연산자 분리 시영역 모델은 방향성 결합기와 브래그 격자를 포함하는 구조의 소자를 전산모사 할 때 미우 유용하다. 먼저 이 모델을 이용하여 대칭구조의 고아섬유 커플러 ADF의 특성을 해석하여 연산자 분리 알고리듬의 정확도를 확인 한 후에, 비대칭 구조 ADF의 특성을 해석하여 필터링 성능의 최적화에 필요한 파라미터 값들을 도출하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.279-280
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• 2009

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2002년도 춘계학술대회 논문집
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• pp.16-21
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• 2002

Generally, Oxidization film are generated by friction and wear in lubricant oil. It is effect that the heat and pressure act on contact area. Because the electrons movement progress the oxidization, if the electrons movement be regulated, the thickness of oxidization film can be regulated and friction characteristics can be improved. But electronic current can deteriorate friction characteristics, so various characteristics must be investigated on transforming of electronic current. Therefor, using the Norton equation, short current were transformed between ball and disk. Also, an experiment was carried out using ball on disk type tester. So, we studied up on effect of current for friction characteristics.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 제35회 춘계학술대회
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• pp.150-155
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• 2002

Generally, Oxidization film are generated by friction and wear in lubricant oil. It is effect that the heat and pressure act on contact area. Because the electrons movement progress the oxidization, if the electrons movement be regulated, the thickness of oxidization film can be regulated and friction characteristics can be improved. But electronic current can deteriorate friction characteristics, so various characteristics must be investigated on transforming of electronic current. Therefor, using the Norton equation, short current were transformed between ball and disk. Also, an experiment was carried out using ball on disk type tester. So, we studied up on effect of current for friction characteristics.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 A
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• pp.130-132
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• 2005

In recent years, We have had many civil application about electromagnetic waves according to increasing of construction of electric power facilities. This paper describes human body effect by regulation management and the guidelines of human body protection of electromagnetic waves. We try to evaluate the effect of electromagnetic waves by actual measurement at wind power generation complexes in Hang-won, Jeju.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.182-183
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• 2006

An electromagnetic memory effect observed in superconducting YBCO system was studied. From the measurement of differential conductance, it was cleared that the mechanism of electromagnetic memory can not be explained by using conventional flux flow model. By changing the density of external magnetic flux, changes m inductance of a coil in which a superconducting bar is inserted were also measured. It was concluded that the electromagnetic memory effect aries from the interaction between the trapped magnetic flux and the weak link of the filament formed in the superconducting bar.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.363-366
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• 1998

25.deg. C 에서 120.deg. C까지 온도를 증가시키면서 hot carrier effect에 의한 nMOSFET의 degradation을 drain current와 transconductance의 변화를 통해 알아보았다. 온도가 증가할수록 hot carrier에 의한 degradation 이 전체적으로 줄어드는 것을 볼수 있었다. stress를 가한 후 reverse mode로 측정하였는데 saturation 영역보다 linear 영역에서 drain current의 degradation이 크게 나탔으며 온도가 증가할수록 이러한 경향이 유지되면서 degradation이 감소하였다. transconductance는 linear 영역과 saturation 영역에서 각각 측정하였는데 온도가 증가할수록 linear 영역의 degradation이 더많이 감소하였다.