• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.371.2-371.2
• /
• 2016

Graphene electronics is one of the promising technologies for the next generation electronic devices due to the outstanding properties such as conductivity, high carrier mobility, mechanical, and optical properties along with extended applications using 2 dimensional heterostructures. However, large contact resistance between metal and graphene is one of the major obstacles for commercial application of graphene electronics. In order to achieve low contact resistance, numerous researches have been conducted such as gentle plasma treatment, ultraviolet ozone (UVO) treatment, annealing treatment, and one-dimensional graphene edge contact. In this report, we suggest a fabrication method of one-dimensional graphene metal edge contact without using graphene exfoliation. Graphene is grown on Cu foil by low pressure chemical vapor deposition. Then, the graphene is transferred on $SiO_2/Si$ wafer. The patterning of graphene channel and metal electrode is done by photolithography. $O_2$ plasma is applied to etch out the exposed graphene and then Ti/Au is deposited. As a result, the one-dimensional edge contact geometry is built between metal and graphene. The contact resistance of the fabricated one-dimensional metal-graphene edge contact is compared with the contact resistance of vertically stacked conventional metal-graphene contact.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.126-126
• /
• 2016

Understanding adsorption behavior organic molecules at oxide surfaces is very important for the application of organic-inorganic hybrid materials. Recently, monoethanolamine (MEA) adsorbed on $TiO_2$ surface has received great interests because it can lower the work function of $TiO_2$ in photo-electronic devices such as OLED and solar cells. In this study, we investigated the role of surface defects in adsorption behaviors of MEA at the rutile $TiO_2$ (110) surface by combined study of scanning tunneling microscopy and density functional theory calculations. Our results revealed that oxygen vacancy is the most stable adsorption site for MEA on $TiO_2$ (110) surface at low coverage. As coverage increases, the oxygen vacancies are occupied with the molecules and MEA molecules start to adsorb at Ti rows at higher coverages. Our results show that the defects at oxide surfaces and the intermolecular interactions are important factors for determining stable adsorption structure of MEA at $TiO_2$ (110) surfaces.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.298.1-298.1
• /
• 2016

Two-dimensional materials have been received significant interest after the discovery of graphene due to their fascinating electronic and optical properties for the application of novel devices. However, graphene lack of certain bandgap which is essential requirement to achieve high performance field-effect transistors. Analogous to graphene materials, molybdenum disulfide ($MoS_2$) as one of transition-metal dichalcogenides family presents considerable bandgap and exhibits promising physical, chemical, optical and mechanical properties. Here we studied nonvolatile memory based on $MoS_2$ which is grown by chemical vapor deposition (CVD) method. $MoS_2$ growth was taken on $1.5{\times}1.5cm^2$ $SiO_2$/Si-substrate. The samples were analyzed by Raman spectroscopy, atomic force microscopy and X-ray photoelectron spectroscopy. Current-voltage (I-V) characteristic was carried out HP4156A. The CVD-$MoS_2$ was analyzed as few layers and 2H-$MoS_2$ structure. From I-V measurement for two metal contacts on CVD-$MoS_2$ sample, we found typical resistive switching memory effect. The device structures and the origin of nonvolatile memory effect will be discussed.

• Journal of Satellite, Information and Communications
• /
• v.9 no.3
• /
• pp.80-85
• /
• 2014

In this paper, we propose and analyze a novel synchronization scheme for ubiquitous home network system. In ubiquitous home network system, synchronization method is very important because many consumer electronic devices send the data simultaneously to each other through infrastructure such as access point. We employ digital watermarking sequence to improve synchronization performance without system overhead. The performance of proposed scheme is analyzed in terms of correlation performance. The results of the paper can be applied to design of various applications for ubiquitous home network systems.

• Korean Journal of Materials Research
• /
• v.19 no.11
• /
• pp.625-630
• /
• 2009

Embedding of active devices in a printed circuit board has increasingly been adopted as a future electronic technology due to its promotion of high density, high speed and high performance. One responsible technology is to embedded active device into a dielectric substrate with a build-up process, for example a chipin-substrate (CiS) structure. In this study, desmear treatment was performed before Cu metallization on an FR-4 surface in order to improve interfacial adhesion between electroless-plated Cu and FR-4 substrate in Cu via structures in CiS systems. Surface analyses using atomic force microscopy and x-ray photoemission spectroscopy were systematically performed to understand the fundamental adhesion mechanism; results were correlated with peel strength measured by a 90o peel test. Interfacial bonding mechanism between electrolessplated Cu and FR-4 substrate seems to be dominated by a chemical bonding effect resulting from the selective activation of chemical bonding between carbon and oxygen through a rearrangement of C-C bonding rather than from a mechanical interlocking effect. In fact, desmear wet treatment could result in extensive degradation of FR-4 cohesive strength when compared to dry surface-treated Cu/FR-4 structures.

• Proceedings of the KIEE Conference
• /
• 2006.10b
• /
• pp.154-158
• /
• 2006

The switching-mode power converter has been widely used because of its features of high efficiency and small weight and size. These features are brought by the ON-OFF operation of semiconductor switching devices. However, this switching operation causes the surge and EMI(Electromagnetic Interference) which deteriorate the reliability of the converter themselves and entire electronic systems. This problem on the surge and noise is one of the most serious difficulties in AC-to-DC converter. Random Pulse Width Modulation (RPWM) is peformed by adding a random perturbation to switching instant while output-voltage regulation of converter is performed. RPWM method for reducing conducted EMI in single switch three phase discontinuous conduction mode boost converter is presented. The more white noise is injected, the more conducted EMI is reduced. But output-voltage is not sufficiently regulated. This is the reason why carrier frequency selection topology is proposed. In the case of carrier frequency selection, output-voltage of steady state and transient state is fully regulated. A RPWM control method was proposed in order to smooth the switching noise spectrum and reduce it's level. Experimental results are verified by converter operating at 300v/1kW with $5%{\sim}30%$ white noise input. Spectrum analysis is performed on the Phase current and the CM noise voltage. The former is measured with Current Probe and the latter is achieved with LISN, which are connected to the spectrum analyzer respectively.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.23 no.9
• /
• pp.67-74
• /
• 2009

For the surge currents like lightning currents containing high frequency components and the abnormal currents having high frequencies which cause the EMI(Electromagnetic interference) problems for the electronic devices and communication instruments, the linear grounding electrodes have the significantly composite impedance characteristics which are dependent on the frequency of the applied current. The impedance of a grounding electrode is not lowered by expanding the dimension of the grounding electrode, and the length of grounding electrode having the minimum value of the grounding impedance for each condition of frequency and soil characteristics is existent, and it is defined as Critical length. In this paper, the critical lengths for the vertically and horizontally-buried grounding electrodes are calculated by using the distributed parameter circuit model. The propriety of the simulations has been confirmed by comparing the simulated results with the measured results.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.53 no.10
• /
• pp.495-499
• /
• 2004

Characteristics of ohmic Ni/Si/Ni contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Ni/Si/Ni sputtered sequentially The annealings were performed at 950℃ using RTP in vacuum ambient and N₂ ambient, respectively. The specific contact resistivity(p/sub c/), sheet resistance(R/sub s/), contact resistance (R/sub c/) transfer length(L/sub T/) were calculated from resistance(R/sub T/) versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were p/sub c/ = 3.8×10/sup -5/Ω㎠, R/sub c/ = 4.9 Ω and R/sub T/ = 9.8 Ω, those of sample annealed at N₂ ambient were p/sub c/ = 2.29×10/sup -4/Ω㎠, R/sub c/ = 12.9 Ω and R/sub T/ = 25.8 Ω. The physical properties of contacts were examined using XRD 3nd AES. The results showed that nickel silicide was formed on SiC and Ni was migrated into SiC. This result indicates that Ni/Si/Ni ohmic contact would be useful in high performance electronic devices.

• Journal of the Korean Institute of Telematics and Electronics C
• /
• v.36C no.7
• /
• pp.17-26
• /
• 1999

In this paper, Bit selectable and Bi-directional Interface Device is described, which can communicate data with the peripheral devices. Specially, an algorithm of truth-table comparison that synthesizes the pulse-type sequential circuit pulse has been proposed to design the Interrupt Generator, and implemented in designing the Interrupt Register. Also, a description of the asynchronous design method is given to remove the clock skew phenomenon, and the output asynchronous control method which finds the optimal clock and controls all the enable signal of the output pins at the same time is presented. Using this technique interface ports have delay time of less-than 0.7ns.

• Journal of KIISE:Software and Applications
• /
• v.26 no.1
• /
• pp.157-157
• /
• 1999

Researches on the gesture recognition have become a very interesting topic in the computer vision area, Gesture recognition from visual images has a number of potential applicationssuch as HCI (Human Computer Interaction), VR(Virtual Reality), machine vision. To overcome thetechnical barriers in visual processing, conventional approaches have employed cumbersome devicessuch as datagloves or color marked gloves. In this research, we capture gesture images without usingexternal devices and generate a gesture trajectery composed of point-tokens. The trajectory Is spottedusing phase-based velocity constraints and recognized using the discrete left-right HMM. Inputvectors to the HMM are obtained by using the LBG clustering algorithm on a polar-coordinate spacewhere point-tokens on the Cartesian space .are converted. A gesture vocabulary is composed oftwenty-two dynamic hand gestures for editing drawing elements. In our experiment, one hundred dataper gesture are collected from twenty persons, Fifty data are used for training and another fifty datafor recognition experiment. The recognition result shows about 95% recognition rate and also thepossibility that these results can be applied to several potential systems operated by gestures. Thedeveloped system is running in real time for editing basic graphic primitives in the hardwareenvironments of a Pentium-pro (200 MHz), a Matrox Meteor graphic board and a CCD camera, anda Window95 and Visual C++ software environment.