• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.8
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• pp.921-926
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• 2015

For the over-heat protection purpose in power strip devices, over-current detection/protection circuits, such as bimetal, switching circuit, and microprocessor-based relay circuit, have been widely setup in high-end products. Most of these circuits are connected to the power line in parallel and, thus, they are sensitive to the line voltage and current distortion. Moreover, these protection circuits are often costly and, therefore, it is hard to meet the commercial requirements. A low-cost over-current detection circuit with the contactless current transducer is designed and tested in this paper. The detection circuit is galvanically isolated from the power line and, thus, less sensitive to the line voltage distortion. The experimental results show that the proposed circuit accurately operates despite of its simple structure and low-cost electronic parts.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.11
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• pp.717-721
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• 2017

We studied the performance enhancement of organic light-emitting diodes (OLEDs) using 2,3,5,6-fluoro-7,7,8,8-tetracyanoquinodimethane ($F_4-TCNQ$) as the hole-transport layer. To investigate how $F_4-TCNQ$ affects the device performance, we fabricated a reference device in an ITO (170 nm)/TPD(40 nm)/$Alq_3$(60 nm)/LiF(0.5 nm)/Al(100 nm) structure. Several types of test devices were manufactured by either doping the $F_4-TCNQ$ in the TPD layer or forming a separate $F_4-TCNQ$ layer between the ITO anode and TPD layer. N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD), tri(8-hydroxyquinoline) aluminum ($Alq_3$), and $F_4-TCNQ$ layers were formed by thermal evaporation at a pressure of $10_{-6}$ torr. The deposition rate was $1.0-1.5{\AA}/s$ for TPD and $Alq_3$. The LiF was subsequently thermally evaporated at a deposition rate of $0.2{\AA}/s$. The performance of the OLEDs was considered with respect to the turn-on voltage, luminance, and current efficiency. It was found that the use of $F_4-TCNQ$ in OLEDs enhances the performance of the device. In particular, the use of a separate layer of $F_4-TCNQ$ realizes better device performance than other types of OLEDs.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.9 no.6
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• pp.591-598
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• 2016

For the mobile healthcare environment, it is important to measure the exact biomedical signals in real time, and another key point is to design mobile healthcare devices with low power consumption. In this paper, we propose a method in which the piezo film sensor(PFS), having a low power characteristic, is used to measure the pulse signal synchronized with the heart rate from the radial artery. The critical issue in the bio-signal processing is the existence of the motion artifacts. To dissolve this problem, we have applied the periodic moving average filter using the quasi-periodicity of the pulse signal in addition to the conventional method of the adaptive filtering using the reference signal. Results of simulation and experiments are presented to confirm that the quasi-periodicity of the PFS signal can be used to eliminate completely the motion artifacts which still appears after the adaptive filtering.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.7
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• pp.3175-3181
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• 2012

The need of multimedia based application service is increasing as the number of smart mobile devices such as smart phone, tablet PC, and netbook is increasing rapidly and the development of application service like IPTV. There are various proposed policies to control the limited network resources. The IMS is used to control wired and wireless aggregation network to support multimedia services that are suitable to the user's need and the policy based models using the PDF of the IMS have emerged. In this paper, we propose the QoS adaption model using various protocols with the PDF of the IMS and the user scenario.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.308-313
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• 2006

We report a photoluminescence (PL) study on the growth process of self-assembled InAs quantum dots (QDs) under the various growth conditions. Distinctive double-peak feature was observed in the PL spectra of the QD samples grown at the relatively high substrate temperature. From the excitation power-dependent PL and the temperature-dependent PL measurements, the double-peak feature is associated with the ground state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.7
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• pp.42-49
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• 1999

In this paper, we proposed a simple measurement method to find the behaviors of the fiber-to-waveguide coupler. The polished fiber blocks and planar waveguides on silicon dioxide were fabricated independently and then optically coupled by physical pressure. Several kinds of polymer with different refractive indices were used for waveguide films. The proposed method makes it possible to measure the center wavelength, bandwidth, extinction ratio, and polarization dependence of the coupler during fabrication procedure. The wavelength sensitivity increased with refractive index of polymer. The symmetric planar waveguide structure and isotropic property of guiding materials reduced polarization dependent property. Insertion loss of the coupler was less than 0.5dB. It is expected that our measurement method is useful for developing various optical devices using evanescent coupling between polished fiber and planar waveguide such as optical modulators and filters etc.

• Journal of information and communication convergence engineering
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• v.10 no.2
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• pp.187-193
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• 2012

A 1 GHz CMOS fast-lock phase-locked loop (PLL) is proposed to support the quick wake-up time of mobile consumer electronic devices. The proposed fast-lock PLL consists of a conventional charge-pump PLL, a frequency-to-digital converter (FDC) to measure the frequency of the input reference clock, and a digital-to-analog converter (DAC) to generate the initial control voltage of a voltage-controlled oscillator (VCO). The initial control voltage of the VCO is driven toward a reference voltage that is determined by the frequency of the input reference clock in the initial mode. For the speedy measurement of the frequency of the reference clock, an FDC with a parallel architecture is proposed, and its architecture is similar to that of a flash analog-to-digital converter. In addition, the frequency-to-voltage converter used in the FDC is designed simply by utilizing current integrators. The circuits for the proposed fast-lock scheme are disabled in the normal operation mode except in the initial mode to reduce the power consumption. The proposed PLL was fabricated by using a 0.18-${\mu}m$ 1-poly 6-metal complementary metal-oxide semiconductor (CMOS) process with a 1.8 V supply. This PLL multiplies the frequency of the reference clock by 10 and generates the four-phase clock. The simulation results show a reduction of up to 40% in the worstcase PLL lock time over the device operating conditions. The root-mean-square (rms) jitter of the proposed PLL was measured as 2.94 ps at 1 GHz. The area and power consumption of the implemented PLL are $400{\times}450{\mu}m^2$ and 6 mW, respectively.

• Transactions on Electrical and Electronic Materials
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• v.11 no.3
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• pp.120-125
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• 2010

For the fabrication of PMOS and integrated semiconductor devices, B, $BF_2$ and dual elements with B and $BF_2$ can be implanted in silicon. 15 keV B ions were implanted in silicon at $7^{\circ}$ wafer tilt and a dose of $3.0{\times}10^{16}\;cm^{-2}$. 67 keV $BF_2$ ions were implanted in silicon at $7^{\circ}$ wafer tilt and a dose of $3.0{\times}10^{15}\;cm^{-2}$. For dual implantations, 67 keV $BF_2$ and 15keV B were carried out with two implantations with dose of $1.5{\times}10^{15}\;cm^{-2}$ instead of $3.0{\times}10^{15}\;cm^{-2}$, respectively. For the electrical activation, the implanted samples were annealed with rapid thermal annealing at $1,050^{\circ}C$ for 30 seconds. The implanted profiles were characterized by using secondary ion mass spectrometry in order to measure profiles. The implanted and annealed results show that concentration profiles for the ${BF_2}^+$ implant are shallower than those for a single $B^+$ and dual ($B^+$ and ${BF_2}^+$) implants in silicon. This effect was caused by the presence of fluorine which traps interstitial silicon and ${BF_2}^+$ implants have lower diffusion effect than a single and dual implantation cases. For the fabricated diodes, current-voltage (I-V) and capacitance-voltage (C-V) were also measured with HP curve tracer and C-V plotter. Electrical measurements showed that the dual implant had the best result in comparison with the other two cases for the turn on voltage characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.194-198
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• 2010

Recently as the electronic devices are getting to be more and more smaller, transformers are needed to be micro fabricated using MEMS technology. In this paper transformers have been fabricated and measured by depositing insulation layer to reduce the loss of eddy current and in the middle core a high permeability permalloy was designed based on the turns ratio between primary coil and secondary coil which are 1:1 transformers. (the number of turns of primary coil and secondary coil: 3/3, 5/5, 7/7). The size of the transformers including ground shield are $1mm{\times}1.5mm$, $1mm{\times}1.95mm$, $1mm{\times}2.35mm$ respectively. The line width, pitch and the height of post are 50um. Based on the measured data from the micro fabricated transformers, the 3/3 turns in the primary coil and secondary coil showed the lowest insertion loss with 1.5 dB at 480 MHz and the 7/7 turns in the primary coil and secondary coil showed the highest insertion loss with 2.5 dB at 280 MHz. Also confirmed that the bandwidth goes up as the number of turns goes down. There was some difference between the actual measured data and the HFSS simulation result. It looks as if it is an error of the difference between oxidation of copper or the permeability of SU-8.