• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.683-685
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• 2012

This paper have presented the analysis of the change for threshold voltage and drain induced barrier lowering among short channel effects occurred in subthreshold region for double gate(DG) MOSFET with two gates to be next-generation devices, based on scaling theory. To obtain the analytical solution of Poisson's equation, Gaussian function been used as carrier distribution to analyze closely for experimental results, and the threshold characteristics have been analyzed for device parameters such as channel thickness and doping concentration and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold chatacteristics. As a result to apply scaling theory, we know the threshold voltage and drain induced barrier lowering is changed, and the deviation rate is changed for device parameters for DGMOSFET.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.9 s.351
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• pp.59-63
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• 2006

With the increasing complexity of VLSI devices, more complex faults have appeared. Many methods for diagnosing the single stuck-at fault have been studied. Often multiple defects on a foiling chip better reflect the reality. So, we propose an efficient diagnosis algorithm for multiple stuck-at faults. By using vectorwise intersections as an important metric of diagnosis, the proposed algorithm can diagnose multiple defects using single stuck-at fault simulator. In spite of multiple fault diagnosis, the number of candidate faults is also drastically reduced. For fault identification, positive calculations and negative calculations based on variable weights are used for the matching algorithm. Experimental results for ISCAS85 and full-scan version of ISCAS89 benchmark circuits prove the efficiency of the proposed algorithm.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.12
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• pp.103-112
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• 2005

In this paper, in order to derive the current-voltage characteristics of n-AlGaN/GaN HEMTs with the piezoelectric and spontaneous polarizations, we suggested analytical solutions for the two-dimensional Poisson equation in the AlGaN and GaN regions by taking into account the longitudinal field variation, field-dependent mobility, and the continuity condition of the channel current flowing in the quantum well. Obtained expressions for long and short channel devices would be applicable to the entire operating regions in a unified manner. Simulation results show that the drain saturation current increases and the cutoff voltage decreases as drain voltage increases. Compared with the conventional models, the present model seems to provide more reasonable explanation for the drain-induced threshold voltage roll-off and the channel length modulation effect.

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.3
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• pp.433-438
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• 2017

Containing an Angle-of-Arrival(: AOA) estimation and interference suppression techniques, an adaptive beamformer is one of core techniques for the Signal Intelligence(: SIGINT) which collect various intelligence utilizing cutting edge devices including the radar and satellite. It generates a beam with the directivity in a corresponding direction, to efficiently receive a signal from the specific direction, using antenna array. In this paper, we present the received signal model including interference signals and noise, which can be applied to an input of the signal intelligence satellite system equipped with the AOA estimation and the interference cancellation techniques, and analysis the characteristics of various signals, which can be included in the proposed received signal model. This proposed signal model can be directly applied to the performance evaluation for a variety of beamforming techniques. Also, we verify the spectrum characteristic of the presented received signal model in the frequency domain through computer simulation examples.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.3
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• pp.413-418
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• 2018

In this paper, we describe the development of a non-enzymatic glucose sensor based on copper nanocubes(Cu NCs) electroplated laser induced graphene(LIG) electrodes which can detect a certain range of glucose concentrations. $CO_2$ laser equipment was used to form LIG electrodes on the PI film. This fabrication method allows easy control of the LIG electrode size and shape. The Cu NCs were electrochemically deposited on the LIG electrodes to improve electron transfer rates and thus enhancing electrocatalytic reaction with glucose. The average sheet resistances before and after electroplating were $15.6{\Omega}/{\Box}$ and $19.6{\Omega}/{\Box}$, respectively, which confirmed that copper nanocubes were formed on the laser induced graphene electrodes. The prepared electrode was used to measure the current according to glucose concentration using an electrochemical method. The LIG electrodes with Cu NCs demonstrated a high degree of sensitivity ($1643.31{\mu}A/mM{\cdot}cm^2$), good stability with a linear response to glucose ranging from 0.05 mM to 1 mM concentration, and a limit of detection of 0.05 mM. In order to verify that these electrodes can be used as flexible devices, the electrodes were bent to $30^{\circ}$, $90^{\circ}$, and $180^{\circ}$ and cyclic voltammetry measurements were taken while the electrodes were bent. The measured data showed that the peak voltage was almost constant at 0.42 V and the signal was stable even in the flexed condition. Therefore, it is concluded that these electrodes can be used in flexible sensors for detecting glucose in the physiological sample like saliva, tear or sweat.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.1
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• pp.21-25
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• 2017

In this study, we have fabricated Schottky barrier diodes (SBD) on single-crystal ${\beta}-Ga_2O_3$ semiconductor that has received much attention for use in next-generation power devices. The SBD had a Pt/Ti/Au Schottky contact on a $2{\mu}m$ Sn-doped low concentration N-type epitaxial layer. The fabricated device exhibited a breakdown voltage of > 180 V, a specific on-resistance of $1.26m{\Omega}{\cdot}cm^2$, and forward current densities of $77A/cm^2$ at 1 V and $473A/cm^2$ at 1.5 V, which proved the potential for use in power device fabrication.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.131-131
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility ($\sim900cm^2/Vs$). These electronic properties allow high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances, the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. This paper studies different channel dimensons ($L_{CH}$ : $0.5{\mu}m$, $1\;{\mu}m$, $1.5\;{\mu}m$) and their effect on the the device transient characteristics. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship. with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. We observe an increase in the turn-on and turn-off time with increasing the channel length. The switching time in 4H-SiC DMOSFETs have been found to be seriously affected by the various intrinsic parasitic components, such as gate-source capacitance and channel resistance. The intrinsic parasitic components relate to the delay time required for the carrier transit from source to drain. Therefore, improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.22-22
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• 2009

The silver thick film has been used in many industries such as display, chip, solar cell, automobile, and decoration with conventional heating. The silver thick film is fired with optimal time and temperature. However, decreasing the fabrication time is required due to high production power. Furthermore, there is a problem that silver in electrode is diffused throughout any substrates. For inhibiting the Ag diffusion and long fabrication time we considered a microwave heating. We investigated firing of silver thick film with conventional and microwave heating. The temperature of substrate was measured by thermal paper and the temperature of substrate was under $100\;^{\circ}C$ The shrinkage of electrode was measured with optical microscopy and optical profilometry. The shrinkage of electrode heat treated with microwave for 5min was similar to the that fired by the conventional heating for several hours. After firing by two types of heating, the diffusion of silver was determined using a optical microscope. The microstructure of sintered silver thick film was observed by SEM. Based on our results, the microwave heating should be a candidate heating source for the fabrication electronic devices in terms of saving the tact time and preventing the contamination of substrate.

• Journal of Sensor Science and Technology
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• v.9 no.2
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• pp.134-140
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• 2000

Si wafer direct bonding(SDB) technology is very attractive for both Si-on-insulator(SOI) electronic devices and MEMS applications. This paper presents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration and applied pressure. The bonding strength was evaluated by tensile strength method. A bond characteristic on the interface was analyzed by using FT-IR, and surface roughness according to HF concentration was analyzed by AFM. Si-F bonds on Si surface after HF pre-treatment are replaced by Si-OH during a DI water rinse. Consequently, hydrophobic wafer was bonded by hydrogen bonding of Si-OH$\cdots$(HOH$\cdots$HOH$\cdots$HOH)$\cdots$OH-Si. The pre-bonding strength depends on the HF pre-treatment condition before pre-bonding. (Min : $2.4kgf/cm^2{\sim}$Max : $14.9kgf/cm^2$)

• Restorative Dentistry and Endodontics
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• v.21 no.1
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• pp.289-299
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• 1996

It is necessary to measure the length of a root canal in order to attain a satisfactory prognosis after root canal therapy. There are several methods for determining root canal length, such as tactile sensation by the dental practitioner, the utilization of x-ray film, and electronic root canal measurement. Among these, the electrical measurement methods, in which the impedence between the oral mucous membrane and periodontal membrane is determined, have advantages of simplicity and accuracy. During root canal treatment, the root canal contains a solution of high electrical conductivity such as pus, blood, sodium hypochlorite and so on. Recently a new electronic root canal measurement device of frequency-dependent type has been developed, which is capable of measuring the length of root canal under moist conditions. Endex and Root ZX, which are frequency-dependent type, were evaluated for accuracy of measuring root canal length in vivo by stereomicroscope. The result were as follows ; 1. 82.5% of Endex and 87.5% of Root ZX measured in the range of ${\pm}0.5$ mm from the apical foramen and both showed 57.5 % in the range of 0.1 mm to 0.5 mm. 2. Endex showed significantly higher accuracy in vital teeth than nonvital teeth(p<0.05). But in case of Root ZX, there was no significant difference between vital and nonvital teeth. 3. As a result of this study, there was no significant difference in accuracy between Endex and Root ZX, and both devices showed file passes the apical foramen in more than half of the cases, and it is thought that this must be considered clinically.