• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.5
• /
• pp.463-467
• /
• 2008

Aluminum nitride (AlN) thin films have been deposited on Au electrodes by using reactive RF magnetron sputtering method in a gas mixture of Ar and $N_2$ at different substrate temperature. It was found that substrate temperature was varied in the range up to $400^{\circ}C$, highly c-axis oriented film can be obtained at $300^{\circ}C$ with full width at half maximum (FWHM) $3.1^{\circ}$. Increase in surface roughness from 3.8 nm to 5.9 nm found to be associated with increase in grain size, with substrate temperature; however, the AlN film fabricated at $400^{\circ}C$ exhibited a granular type of structure with non-uniform grains. The Al 2p and N 1s peak in the X-ray photoelectron spectroscopy (XPS) spectrum confirmed the formation of Al-N bonds. The XPS spectrum also indicated the presence of oxynitrides and oxides, resulting from the presence of residual oxygen in the vacuum chamber. It is concluded that the AlN film deposited at substrate temperature of $300^{\circ}C$ exhibited the most desirable properties for the application of high-frequency surface acoustic devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.2
• /
• pp.98-102
• /
• 2010

This paper describes that single crystalline 3C-SiC (cubic silicon carbide) thin films have been deposited on carbonized Si(100) substrates using hexamethyldisilane (HMDS, $Si_2(CH_3){_6}$) as a safe organosilane single precursor and a nonflammable mixture of Ar and $H_2$ gas as the carrier gas by APCVD at $1280^{\circ}C$. The deposition was performed under various conditions to determine the optimized growth condition. The crystallinity of the 3C-SiC thin film was analyzed by XRD (X-ray diffraction). The surface morphology was also observed by AFM (atomic force microscopy) and voids between SiC and Si interfaces were measured by SEM (scanning electron microscopy). Finally, residual strain and hall mobility was investigated by surface profiler and hall measurement, respectively. From these results, the single crystalline 3C-SiC film had a good crystal quality without defects due to viods, a low residual stress, a very low roughness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.11a
• /
• pp.56-59
• /
• 1997

SAW filters of transversal type were fabricated on some piezoelectric substrates of the LN 128$^{\circ}$ Y-X, LN 64$^{\circ}$Y-X, Quartz ST-cut wafers through the simulation in which the number o: IDT and window function were changed for the required frequency, and the mask making. Their IDT spacing and width were 3 ${\mu}{\textrm}{m}$, chip size was 4.462 $\times$ 2.086 mm$^2$, and they had double electrode transversal type IDTs. In addition to pure Al electrode devices, Ti thin films having the different thicknesses was introduced between the Al electrode and the substrate for improving the power resistance strength. They had 11-12 dB insertion losses similar to those of pure Al electrode SAW filters in case of LN 128$^{\circ}$ Y-X, LN 64$^{\circ}$ Y-X, meaning that Ti thin film was not detrimental to the insertion loss and general frequency properties. The filters had the center frequencies 162MHz for LN 128$^{\circ}$ Y-X, 186MHz for 64$^{\circ}$ Y-X, and 131MHz for Quartz ST-cut substrates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1992.05a
• /
• pp.82-85
• /
• 1992

In this study, charge pumping method was used to investigate the Si-SiO$_2$interface characteristics of the nonvolatile SNOSFET memory devices, fabricated using the CMOS 1 Mbit processes (1.2$\mu\textrm{m}$ design rule), with thin oxide layer of 30${\AA}$ thick and nitride layer of 525${\AA}$ thick on the n-type silicon substrate (p-channel). Charge pumping current characteristics with the pulse base level were measured for various frequencies, falling times and rising times. By means of the charge dynamics in a non-steady state, the average Si-SiO$_2$interface state density and capture cross section were determined to be 3.565${\times}$10$\^$11/cm$\^$-2/eV$\^$-1/ and 4.834${\times}$10$\^$-16/$\textrm{cm}^2$, respectively. However Si-SiO$_2$ interface state densities were disributed 2.8${\times}$10$\^$-11/～5.6${\times}$10$\^$11/cm$\^$-2/～6${\times}$10$\^$11/cm$\^$-2/eV$\^$-1/ in the lover half of energy gap.

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2006.09a
• /
• pp.315-316
• /
• 2006

The paper presents some results regarding the obtaining of some copper heat pipes with a porous copper internal layer for electronic components cooling. The heat pipes were realized by sintering of spherical copper powders of $90{\div}125\;{\mu}m$ size directly on the internal side of a copper pipe of 18 mm in diameter. The obtained pipes were then brazed in order to obtain a heat pipe of 0.5 m in length. After that, the heat pipe was sealed and filled with a small quantity of distilled water as working fluid. To establish the total heat transport coefficient and the thermal flow transferred at the evaporator, some external devices were realized to allow the heating of the evaporator and the cooling of the condenser. Water heat pipes are explored in the intermediate temperature range of 303 up to 500 K. Test data are reported for copper water heat pipe, which was tested under different orientations. The obtained results show that the water heat pipe has a good thermal transfer performance in the temperatures range between 345 and 463 K.

• Transactions of the Korean Society of Automotive Engineers
• /
• v.22 no.7
• /
• pp.57-62
• /
• 2014

This study presented the feasibility of a coolant heat-source heat pump system as an alternative heating system for electrically driven vehicles. Heat pumps are among the most environmentally friendly and efficient heating technologies in residential buildings. In various countries, electric mobiles devices such as EV, PHEV, and FCEV, have been mainly concerned with heat pumps for new mobile markets. The experiments herein were conducted for various ambient temperatures and coolant temperatures to reflect the winter season. The system, a coolant heat-source heat pump, consisted of an inside heat exchanger, an outside heat exchanger, a motor driven compressor, an electronic expansion valve, and plumbing parts. For the experimental results, the maximum heating capacity and air discharge temperature are up to 6.3 kW and $62^{\circ}C$ respectively at an ambient temperature of $10^{\circ}C$, and coolant at $10^{\circ}C$. However, at $-20^{\circ}C$ ambient temperature and $-10^{\circ}C$ coolant temperature, conditions were insufficient to warm the cabin as the air discharge temperature was $13^{\circ}C$.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.29 no.11
• /
• pp.59-65
• /
• 2015

By harnessing the thermal hysteresis behavior of vanadium dioxide($VO_2$), we demonstrated multi-resistance states in a two-terminal electronic device based on a $VO_2$ thin film by using a 966nm infrared laser diode as an excitation light source for resistance modulation. Before stimulating the device using 966nm laser pulses, the thermal hysteresis behavior of the device resistance was measured by using a temperature chamber. After that, the $VO_2$ device was thermally biased at ${\sim}71.6^{\circ}C$ so that its temperature fell into the thermal hysteresis region of the device resistance. Six multi-states of the device resistance could be obtained in the fabricated $VO_2$ device by five successive laser pulses with equal 10ms duration and increasing power. Each resistance states were maintained while the temperature bias was applied. And, the resistance fluctuation level was within 2.2% of the stabilized resistance and decreased down to less than 0.9% of the stabilized resistance 5s after the illumination.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.27 no.9
• /
• pp.36-43
• /
• 2013

The prevalence of electronic devices in our modern life is accompanied with the generation of harmonics caused by the nonlinear characteristic load. Especially, the employment of LED have brought the rapid use of SMPS. SMPS is used for supplying the constant DC electric power to the LED display board, but it has a big problem which gives birth of harmonics causing by its high-speed switching. measurement HIOKI 3196 equipment to solve these harmonics were measured. In this study, we are LED Display Board Load Measuring the impedance response with $X_L$ changes for removing harmonics in the measured. And we adopted the suitable passive filter by the impedance response characteristic obtained in the $X_L$ variation experiments. We are trying to deeply the application of passive harmonic filter characteristics that generation in the LED Display Board through EDSA LED simulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.331-332
• /
• 2007

Surface micromachined SiC devices have readily been fabricated from the polycrystalline (poly) 3C-SiC thin film which has an advantage of being deposited onto $SiO_2$ or $Si_3N_4$ as a sacrificial layer. Therefore, in this work, magnetron reactive ion etching process which can stably etch poly 3C-SiC thin films grown on $SiO_2$/Si substrate at a lower energy (70 W) with $CHF_3$ based gas mixtures has been studied. We have investigated the etching properties of the poly 3C-SiC thin film using PR/Al mask, according to $O_2$ flow rate, pressure, RF power, and electrode gap. The etched RMS (root mean square), etch rate, and etch profile of the poly 3C-SiC thin films were analyzed by SEM, AFM, and $\alpha$-step.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.313-314
• /
• 2007

AlN is used a wide variety of applications such as electroacoustic devices, blue diode and metal-insulator-semiconductor structures. AlN thin films were deposited on Si substrates by rf sputter technique with low temperature process. The orientation and morphology of AlN thin films at various power in the range from 150 to 300 w was studied. X-ray diffraction (XRD), full width at half-maximum (FWHM) and field emission scanning electron microscopy were employed to characterize the deposited films. The c-axis orientation along (002) Plane at experimental results was enhanced with the increasing of the rf power from 150 to 300 w and the surface morphology of the films showed a homogeneous and nano-sized microstructure.