• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.4
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• pp.199-204
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• 2016

This paper was proposed floating island power MOSFET for lowering on state resistance and the proposed device was maintained 600 V breakdown voltage. The electrical field distribution of floating island power MOSFET was dispersed to floating island between P-base and N-drift. Therefore, we designed higher doping concentration of drift region than doping concentration of planar type power MOSFET. And so we obtain the lower on resistance than on resistance of planar type power MOSFET. We needed the higher doping concentration of floating island than doping concentration of drift region and needed width and depth of floating island for formation of floating island region. We obtained the optimal parameters. The depth of floating island was $32{\mu}m$. The doping concentration of floating island was $5{\times}1,012cm^2$. And the width of floating island was $3{\mu}m$. As a result of designing the floating island power MOSFET, we obtained 723 V breakdown voltage and $0.108{\Omega}cm^2$ on resistance. When we compared to planar power MOSFET, the on resistance was lowered 24.5% than its of planar power MOSFET. The proposed device will be used to electrical vehicle and renewable industry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.445-448
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• 2016

Transparent UV photodetector was achieved by using wide bandgap metal oxide materials. In order to realize transparent heterojunction UV photodetector, n-type ZnO and p-type NiO metal oxide materials were employed. High light-absorbing SnS layer was inserted into the n-ZnO and p-NiO layers. High-performing UV photodetector was realized by ZnO/SnS/NiO/ITO structures to provide extremely fast response times (Fall time: $7{\mu}s$ and rise time: $13{\mu}s$) and high rectifying ratio. The use of functional SnS-embedded photodetector would provide a route for high functional photoelectric devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.5
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• pp.284-288
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• 2016

Among the various physiological information that could be obtained from human body, heartbeat rate is a commonly used vital sign in the clinical milieu. Photoplethysography (PPG) sensor is incorporated into many wearable healthcare devices because of its advantages such as simplicity of hardware structure and low-cost. However, healthcare device employing PPG sensor has been issued in susceptibility of light and motion artifact. In this paper, to develop the real-time heart rate measurement device that is less sensitive to the external noises, we have fabricated an ultra-small wireless LC resonant pressure sensor by MEMS process. After performance evaluation in linearity and repeatability of the MEMS pressure sensor, heartbeat waveform and rate on radial artery were obtained by using resonant frequency-pressure conversion method. The measured data using the proposed heartbeat rate measurement system was validated by comparing it with the data of an commercialized heart rate measurement device. Result of the proposed device was agreed well to that of the commercialized device. The obtained real time heartbeat wave and rate were displayed on personal mobile system by bluetooth communication.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.77-78
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• 2009

We report numerical simulations to investigate of the dependence of the on/off current ratio and channel charge distributions in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width and thicknesses. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L of 10um, but varying the channel width W from 5nm to 5um, and thickness t from 10nm to 30nm. We have shown that $Q_{ON}/Q_{OFF}$ drastically decreases (from ${\sim}2.9{\times}10^4$ to ${\sim}9.8{\times}10^3$) as the channel thickness increases (from 10nm to 30nm). As a result of the simulation using a quantum model, even higher charge density in the bottom of SiNW channel was observed than that in the bottom of control channel.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.47-47
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• 2009

The formation of variable one-dimensional structures including core/shell structure is of particular significance with respect to potential applications for thermoelectric devices with the enhanced figure of merit ($ZT=S2{\sigma}T/{\kappa}$). We report the fabrication of Bi-Te core/shell nanowire based on a novel stress induced method. Fig. 1 schematically shows the nanowire fabrication process. Bi nanowires are grown on the Si substrate by the stress-induced method, and then Te is evaporated on the Bi nanowires. Fig. 2 is a transmission electron microscopy image clearly showing a core/shell structure for which effective phonon scattering and quantum confinement effect are expected. Electrical conductivity of the core/shell nanowire was measured at the temperatures from 4K to 300K, respectively. Our results demonstrate that Bi-Te core/shell nanowire can be grown successfully by the stress-induced method. Based on the result of electrical transport measurement and characteristic morphology of rough surface, Seebeck coefficient and thermal conductivity of Bi-Te core/shell nanowires are presented.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.33-36
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• 2012

In this study, the thickness effects of $Al_2O_3$ layer on the sensing properties of $SiO_2/Al_2O_3$ (OA) stacked membrane were investigated using electrolyte-insulator-semiconductor (EIS) structure for high quality pH sensor. The $Al_2O_3$ layers with a respective thickness of 5 nm, 15 nm, 23 nm, 50 nm, and 100 nm were deposited on the 5-nm-thick $SiO_2$ layers. The electrical characteristics and sensing properties of each OA membranes were investigated using metal-insulator-semiconductor (MIS) and EIS devices, respectively. As a result, the OA stacked membrane with 23-nm-thick $Al_2O_3$ layer shows the excellent characteristics as a sensing membrane of EIS sensor, which can enhance the signal to noise ratio.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.391-396
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• 2013

Recently, microcavity is studied to reduce the optical loss of BLU and OLED. In this paper, we suggest applying microcavity to photo-luminescent lamp with plasma discharge technology to meet the display applications for a BLU for LCD. The structure of photo-luminescent lamp consists of SUS foil and ITO glass with microcavity. The opto-electric characteristics of photo-luminescent lamp with microcavity was evaluated. The brightness of photo-luminescent device was increased over $111cd/m^2$ with the adaptation of patterned microcavity at $30{\mu}m$. The 3D optical simulation verified the enhanced light outcoupling when microcavity applied to the device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.93-98
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• 2020

We investigated the effect of a post-annealing process using ultraviolet (UV) light on the electrical properties of solution-processed InZnO (IZO) thin-film transistors (TFTs). UV light was irradiated on IZO TFTs for different time periods of 0s, 30s, and 90s. We measured transfer and retention stability curves to evaluate the performance of the fabricated TFTs. In addition, we measured height, amplitude, and phase AFM images to analyze changes in the surface and morphology of the devices. AFM measurements were performed by setting the drive amplitude of the cantilever tip to 47.9 mV in tapping mode, then dividing the device surface into 500 nm × 500 nm. In the case of IZO TFT irradiated with UV for 30s, the electron mobility and I_on/I_off ratio were improved, the threshold voltage was reduced by approximately 2 V, and the subthreshold swing also decreased form 1.34 V/dec to 1.11 V/dec.

• Journal of Electrical Engineering and Technology
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• v.8 no.3
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• pp.446-452
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• 2013

Under frequency load shedding (UFLS) is an effective way to prevent system blackout after a serious disturbance occurs in a power system. A novel centralized adaptive under frequency load shedding (AUFLS) scheme using the synchronous phase measurement unit (PMU) is proposed in this paper. Two main stages are consisted of in the developed technique. In the first stage, the active power deficit is estimated by using the simplest expression of the generator swing equation and static load model since the frequency, voltages and their rate of change can be obtained by means of measurements in real-time from various devices such as phase measurement units. In the second stage, the UFLS schemes are adapted to the estimated magnitude based on the presented model. The effectiveness of the proposed AUFLS scheme is investigated simulating different disturbance in IEEE 10-generator 39-bus New England test system.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.19 no.1
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• pp.11-18
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• 2020

The emergence of the flow-through cell (FTC) method has made up for the limitations of previous dissolution test methods, but the high cost of the FTC dissolution devices have seriously hindered the progression of research and application of the FTC. This new design uses a peristaltic pump to simulate the sinusoidal flow rate of a piston pump. The flow profile of each peristaltic pump was sinusoidal with a pulsation of 120 ± 1 pulses per minute, and the flow rate ranged from 1.0 - 36.0 mL/min. The flow control of each channel was adjusted independently so the flow errors of the seven channels were close to 2%. The structure of the system was simplified, and the cost was reduced through manual sampling and immersing the FTC in a water bath. The dissolution rate of the theophylline and aminophylline films was determined, and good experimental results were obtained.