• Journal of information and communication convergence engineering
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• v.7 no.4
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• pp.475-479
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• 2009

In ad hoc network, the scarce energy management of the mobile devices has become a critical issue in order to extend the network lifetime. Current research activity for the Minimum Energy Multicast (MEM) problem has been focused on devising efficient centralized greedy algorithms for static ad hoc networks. In this paper, we consider mobile ad hoc networks(MANETs) that could provide the reliable monitoring and control of a variety of environments for remote place. Mobility of MANET would require the topology change frequently compared with a static network. To improve the routing protocol in MANET, energy efficient routing protocol would be required as well as considering the mobility would be needed. In this paper, we propose a new method, the CACH(Context-aware Clustering Hierarchy) algorithm, a hybrid and clustering-based protocol that could analyze the link cost from a source node to a destination node. The proposed analysis could help in defining the optimum depth of hierarchy architecture CACH utilize. The proposed CACH could use localized condition to enable adaptation and robustness for dynamic network topology protocol and this provide that our hierarchy to be resilient. As a result, our simulation results would show that CACH could find energy efficient depth of hierarchy of a cluster.

• The Transactions of the Korean Institute of Power Electronics
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• v.17 no.6
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• pp.495-499
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• 2012

Recently, DC distribution systems become hot issues since DC type loads increase rapidly according to the expansion of IT equipment such as computers, servers, and digital devices; DC type loads will cover 50% for all electricity loads in 2020 which was mere 10% in 2000. DC distribution systems are also accelerated by the expansion of renewable power systems since they are easy to be interfaced with DC grids rather than AC grids. However, removing the fault current in DC grids is comparably difficult since the current in DC grids has non zero-crossing point like in AC grids. Thus, developing dedicated DC circuit breakers for DC grids is necessary to get safety for human and electrical facilities. Magnet arc extinguishing method is proper to small size DC circuit breakers. However, simple Magnet arc extinguishing method is not enough to break inductive fault currents. This paper proposed a novel DC circuit breaker against inductive fault current defined by IEEE C37.14-2004 Standard for Low-Voltage DC Power Circuit Breakers Used in Enclosures. The performance of the proposed DC circuit breaker was verified by an experimental circuit breaker test system built in this research.

• Journal of Information Display
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• v.6 no.1
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• pp.28-32
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• 2005

The electronic structures of Al/RbF/tris-(8-hydroxyquinoline)aluminium ($Alq_3$) and $Al/CaF_2/Alq_3$interfaces were investigated using x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). For both systems, the UPS showed a significant valence band shift following the deposition of the thin fluoride layers on $Alq_3$. However, the formation of gap state in valence region and the extra peak N 1s core level spectra showed different trends, suggesting that the alkali fluoride and alkali-earth fluoride interlayer have different reaction mechanisms at the interface between Al cathode and $Alq_3$. In addition, the deposition of Al has considerably less effect on the valence band shift compared to the deposition of both RbF and $CaF_2$. These results suggest that the charge transfer across the interface and the resulting gap state formation may have lesser effect on the enhancement of organic light-emitting device performance than the observed valence band shift, which is thought to lower the electron injection barrier.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.55 no.4
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• pp.238-243
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• 2006

This paper presents novel ignition method for automotive 35W metal halide discharge lamp electronic ballast. At this study, the novel method of ignition is developed to reduce costs and size of the ballast. By use of the novel method, the voltage needed in ignition is decreased, which result in use of the lower voltage rating power devices compared with conventional method and product compactness was achieved by deleting a circuit generating negative voltage needed in ignition at an conventional circuit. In terms of luminosity, color rendering, light efficiency(lm/W) and lifespan, the metal halide lamp is superior to, but unlike halogen lamp, it have more complicated transient characteristics to reach its steady state than the conventional halogen lamp. Therefore, in this paper, the electronic ballast was designed such that the metal halide lamp could be optimized for the automotive, by applying a method of microcontroller-based digital control. The results of the proposed system is verified through various experiment results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.190-193
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• 2002

The processing technology of organic thin-film transistors (Ons) performances have improved fur the last decade. Gate insulator layer has generally used inorganic layer, such as silicon oxide which has properties of a low electrical conductivity and a high breakdown field. However, inorganic insulating layers, which are formed at high temperature, may affect other layers termed on a substrate through preceding processes. On the other hand, organic insulating layers, which are formed at low temperature, dose not affect pre-process. Known wet-processing methods for fabricating organic insulating layers include a spin coating, dipping and Langmuir-Blodgett film processes. In this paper, we propose the new dry-processing method of organic gate dielectric film in field-effect transistors. Vapor deposition polymerization (VDP) that is mainly used to the conducting polymers is introduced to form the gate dielectric. This method is appropriate to mass production in various end-user applications, for example, flat panel displays, because it has the advantages of shadow mask patterning and in-situ dry process with flexible low-cost large area displays. Also we fabricated four by four active pixels with all-organic thin-film transistors and phosphorescent organic light emitting devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.904-907
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• 2003

We synthesized dendrimers containing light switchable units, azobenzene group. To apply to the molecular level devices or data storage system using Langmuir-Blodgett(LB) film, we firstly investigated the monolayer behavior using the surface pressure-area(${\pi}-A$) isotherms at air-water interface. And then the surface pressure shift of monolayer by light irradiation was also measured to the dendrimer with azobezene group. As a result, the monolayer of dendrimer with azobenzene group showed the reversible photo-switching behavior by the isomerization of azobenzene group in their periphery. This results suggest that the dendrimers with azobenzene group can be applied to high efficient nano-device of molecular level. And we measured the electrical properties by MIM and STM. The dendrimer with azobenzene group compared trans form and cis form at electrical properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.111-116
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• 2001

Poly-Si TFT's(Polysilicon thin filmtransistors) have been actively studied due to their applications in active matrix liquid crystal displays and active pull-up devices of CMOS SRAM's. For such applications, the leakage current has to be in the range of sub-picoampere. However, poly-Si TFT's suffer from anomalous high leakage currents, which is attributed to the emission of the traps present at gain boundaries in the drain junction. The leakage current has been analyzed by the field emission via grain-boundary traps and thermionic field emission over potential barrier located at the grain boundary. We found that the models proposed before are not consistent with the experimental results at far as drain-offset poly-Si TFT's we fabricated concern. In this paper, leakage current of drain-offset poly-Si TFT's with different offset lengths was studied. A conduction model based on the thermionic emission of the tunneling electrons is developed to identify the leakage mechanism. It was found that the effective grain size of the drain-offset region is important factor in the leakage current. A good agreement between experimental and simulated results of the leakage current is obtained.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.48 no.6
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• pp.760-772
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• 1999

The CAN is a serial communication protocol for distributed real-time control and automation systems. Data generated from field devices in the distributed control of power plant are classified into three categories: real-time event data, real-time control data, non-real-time data. These data share a CAN medium. If the traffic of the CAN protocol is not efficiently controlled, performance requirements of the power plant system could not be satisfied. This paper proposes a bandwidth allocation algorithm that can be applicable to the CAN protocol. The bandwidth allocation algorithm not only satisfies the performance requirements of the real-time systems in the power plant but also fully utilizes the bandwidth of CAN. The bandwidth allocation algorithm introduced in this paper is validated using the integrated discrete-event/continuous-time simulation model which comprises the CAN network and distributed control system of power plant.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.7
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• pp.641-646
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• 2005

To fabricate a single layer white organic light emitting diode (OLED), a novel non-conjugated blue emitting material PPPMA-co-DTPM copolymer was synthesized containing a perylene moiety unit with hole transporting and blue emitting ability and a triazine moiety unit with electron transporting ability. The devices were fabricated using PPPMA-co-DTPM $(PPPMA[70\;wt\%]:DTPM[30\;wt\%])$ copolymer by varying the doping concentrations of each red, green and blue fluorescent dye, by molecular-dispersing into Toluene solvent with spin coating method. In case of ITO/PPPMA-co-DTPM:TPB$(3\;mol\%):C6(0.04\;mol\%):NR(0.015\;mol\%)/Al$ structure, as they were molecular-dispersing into 30 mg/ml Toluene solvent, nearly-pure white light was obtained both (0.325, 0.339) in the CIE coordinates at 18 V and (0.335, 0.345) at 15 V. The turn-on voltage was 3 V, the light-emitting turn-on voltage was 4 V, and the maximum external quantum efficiency was $0.667\%$ at 24.5 V. Also, in case of using 40 mg/ml Toluene solvent, the CIE coordinate was (0.345, 0.342) at 20 V.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.117-122
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• 1994

The role of ZnS buffer layer not only suppresses chemical reactions between emission material and insulating material but also alters the luminescence and the crystallinity of the emission layer, if ZnS buffer layer was sandwiched between emission layer and insulating layer of electroluminescent device. In this research, we fabricated ZnS thin film with rf magnetron sputter system by varying rf power 100, 200W, substrate temperature 100, 150, 200, 250.deg. C and post-annealing temperature 200, 300, 400, 500.deg. C and analysed X-ray diffraction pattern, transmission spectra and cross section by SEM photograph for seeking the optimal crystallization condition of ZnS buffer layer. As a result, increasing the rf power, the crystallinity of ZnS thin film was improved. It was found that the ZnS thin film had better properties than anything else when fabricated with the following conditions ; rf power 200W, substrate temperature 150.deg. C, and post-annealing temperature 400.deg. C. ZnS thin film had the transmittance more than 80% in visible range. So it is suitable to use as a buffer layer of electroluminescent devices.