• Journal of the Ergonomics Society of Korea
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• v.31 no.5
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• pp.629-636
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• 2012

Objective: The purpose of this study is to compare the characteristics of single and double finger gestures related on the web browser and to extract the appropriate finger gestures. Background: As electronic equipment emphasizes miniaturization for improving portability various interfaces are being developed as input devices. Electronic devices are made smaller, the gesture recognition technology using the touch-based interface is favored for easy editing. In addition, user focus primarily on the simplicity of intuitive interfaces which propels further research of gesture based interfaces. In particular, the fingers in these intuitive interfaces are simple and fast which are users friendly. Recently, the single and double finger gestures are becoming more popular so more applications for these gestures are being developed. However, systems and software that employ such finger gesture lack consistency in addition to having unclear standard and guideline development. Method: In order to learn the application of these gestures, we performed the sketch map method which happens to be a method for memory elicitation. In addition, we used the MIMA(Meaning in Mediated Action) method to evaluate gesture interface. Results: This study created appropriate gestures for intuitive judgment. We conducted a usability test which consisted of single and double finger gestures. The results showed that double finger gestures had less performance time faster than single finger gestures. Single finger gestures are a wide satisfaction difference between similar type and difference type. That is, single finger gestures can judge intuitively in a similar type but it is difficult to associate functions in difference type. Conclusion: This study was found that double finger gesture was effective to associate functions for web navigations. Especially, this double finger gesture could be effective on associating complex forms such as curve shaped gestures. Application: This study aimed to facilitate the design products which utilized finger and hand gestures.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.3
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• pp.9-17
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• 2015

After its inception in 1994, the Journal of the Microelectronics and Packaging Society has continued to make significant strides in the number and quality of publications within its field. The interest in the microelectronics and packaging research has become more critical as consumer electronic products continue its increasing trend towards thinner and lighter devices that tests the boundaries of electronic devices. This study utilizes social network analysis of all published literature in the Journal for the past 22 years. Using the keywords and abstracts available within each individual article, the publications within the Journal has focused on major topics covering (1) flip chip, (2) reliability, (3) Cu, (4) IMC (intermetallic compounds), and (5) thin film. Using the social network relationship between keywords within articles, flip chip was closely associated with reliability, BGA (ball grid array), contact resistance, electromigration in many of the published research works within the Journal. From the centrality analysis, it was found that flip chip, reliability, Cu, thin film, IMC, and RF (radio frequency) to have a high degree of centrality suggesting these key areas of research have relatively high connectivity with other research topics within the Journal and is central to many of the research fields within the micro-electronics and packaging area. The cohesiveness analysis showed research clustering of five major cohesive sub-groups and was mapped to better understand the major area of research within this field. Research within the field of micro-electronics and packaging converges many disciplines of science and engineering. The continued evolution within this field requires an understanding of the rapidly changing industry environment and the consumer needs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.1
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• pp.6-9
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• 2020

Thin film transistors (TFTs) with large-area, high mobility, and high reliability are important factors for next-generation displays. In particular, thin transistors based on IGZO oxide semiconductors are being actively researched for this application. In this study, several methods for improving the reliability of a-IGZO TFTs by applying various materials on a passivation layer are investigated. In the literature, inorganic SiO₂, TiO₂, Al₂O₃, ZTSO, and organic CYTOP have been used for passivation. In the case of Al₂O₃, excellent stability is exhibited compared to the non-passivation TFT under the conditions of negative bias illumination stress (NBIS) for 3 wavelengths (R, G, B). When CYTOP passivation, SiO₂ passivation, and non-passivation devices were compared under the same positive bias temperature stress (PBTS), the Vth shifts were 2.8 V, 3.3 V, and 4.5 V, respectively. The Vth shifts of TiO₂ passivation and non-passivation devices under the same NBTS were -2.2 V and -3.8 V, respectively. It is expected that the presented results will form the basis for further research to improve the reliability of a-IGZO TFT.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.5
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• pp.345-350
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• 2018

Nanomaterials have considerable potential to solve several key challenges in various electrochemical devices, such as fuel cells. However, the use of nanoparticles in high-temperature devices like solid-oxide fuel cells (SOFCs) is considered problematic because the nanostructured surface typically prepared by deposition techniques may easily coarsen and thus deactivate, especially when used in high-temperature redox conditions. Herein we report the synthesis of a self-regenerated Pd metal nanoparticle on the perovskite oxide anode surface for SOFCs that exhibit self-recovery from their degradation in redox cycle and $CH_4$ fuel running. Using Pd-doped perovskite, $La(Sr)Fe(Mn,Pd)O_3$, as an anode, fairly high maximum power densities of 0.5 and $0.2cm^{-2}$ were achieved at 1,073 K in $H_2$ and $CH_4$ respectively, despite using thick electrolyte support-type cell. Long-term stability was also examined in $CH_4$ and the redox cycle, when the anode is exposed to air. The cell with Pd-doped perovskite anode had high tolerance against re-oxidation and recovered the behavior of anodic performance from catalytic degradation. This recovery of power density can be explained by the surface segregation of Pd nanoparticles, which are self-recovered via re-oxidation and reduction. In addition, self-recovery of the anode by oxidation treatment was confirmed by X-ray diffraction (XRD) and scanning electron microscopy (SEM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.111-118
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• 2002

A new lithium niobate optical modulator with a polymer buffer layer on Ni in-diffused optical waveguide is proposed for the fist time, successfully fabricated and examined at a wavelength of 1.3 mm. By determining the diffusion parameters of Ni in-diffused waveguide to achieve more desirable mode size which is well matched to the mode in the fiber, the detailed results on the achievement of high optical throughput are reported. In addition, the usefulness of polymer buffer layer which can be applicable to a buffer layer in Ni in-diffused waveguide devices is demonstrated. Several sets of channel waveguides fabricated on Z-cut lithium niobate by Ni in-diffusion were obtained and on which coplanar traveling-wave type electrodes with a polymer-employed buffer layer were developed by a conventional fabrication method for characterizing of electro-optical performances of the proposed device. The experimental results show that the measured half-wave voltage is of ~10 V and the total measured fiber-to-fiber insertion loss is of ~6.4 dB for a 40 mm long at a wavelength of =1.3 mm, respectively. From the experimental results, it is confirmed that the polymer-employed buffer layer in LiNbO3 optical modulator can be a substitute material instead of silicon oxide layer which is usually processed at a high temperature of over $300^{\circ}C$. Moreover, the fabrication tolerances by using polymer materials in LiNbO3 optical modulators are much less strict in comparison to the case of dielectric buffer layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.104-104
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• 2009

Critical dimensions has rapidly shrunk to increase the degree of integration and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate insulator layer and the low conductivity characteristic of poly-silicon. To cover these faults, the study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$ and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-silicon gate is not compatible with high-k materials for gate-insulator. To integrate high-k gate dielectric materials in nano-scale devices, metal gate electrodes are expected to be used in the future. Currently, metal gate electrode materials like TiN, TaN, and WN are being widely studied for next-generation nano-scale devices. The TaN gate electrode for metal/high-k gate stack is compatible with high-k materials. According to this trend, the study about dry etching technology of the TaN film is needed. In this study, we investigated the etch mechanism of the TaN thin film in an inductively coupled plasma (ICP) system with $O_2/BCl_3/Ar$ gas chemistry. The etch rates and selectivities of TaN thin films were investigated in terms of the gas mixing ratio, the RF power, the DC-bias voltage, and the process pressure. The characteristics of the plasma were estimated using optical emission spectroscopy (OES). The surface reactions after etching were investigated using X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.275-276
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• 2009

We have studied physical properties of organic light-emitting diodes (OLEDs) in a device with 7,7,8,8-tetracyanoquinodimethane (TCNQ). Since the TCNQ has a high electron affinity, it is widely used for a charge-transport and injection layer. And the TCNQ-derivatives have also been used to control the conductivity of the materials. It is known that a charge injection and transport in OLEDs with a TCNQ-derivative enhances a performance of the devices such as operating voltage and efficiency. To see how the TCNQ affects on the device performance, we have made a reference device in a structure of ITO(170nm)/TPD(40nm)/$Alq_3$(60nm)/LiF(0.5nm)/Al(100nm). And several type of devices were manufactured by doping TCNQ either in TPD or $Alq_3$ layer. The TCNQ layer was also formed in between the organic layers. N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD), tri(8-hydroxy quinoline) aluminium ($Alq_3$), and TCNQ layers were formed by thermal evaporation at a pressure of $10^{-6}$ torr. The deposition rate was $1.0{\sim}1.5\;{\AA}/s$ for TPD, and $1.0{\sim}1.5\;{\AA}$ for $Alq_3$. The LiF was thermally evaporated at a deposition rate of $0.2\;{\AA}/s$ successively. The device with TCNQ-derivative improved the turn-on voltage compared to the one without TCNQ-derivative.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.295-296
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• 2009

There are various application of liquid crystal materials to devices, especially, blue phase liquid crystal (BPLC) and nano-structured liquid crystal mixture have been studied recently because BPs existing temperature range has been expanded by polymer-stabilization and liquid crystal has been confined in room which has certain coherence length so that their particular characters, such as fast response time and optically isotropic state at no electric field, could apply to advanced liquid crystal display devices. However, there is an crucial problem which is high operating voltage from low Kerr constant and limited electric field utilization using in-plain electric field. In this paper, we will analyze cell structure in the way of using electric field and show effective electric field utilization to reduce operating voltage.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.12
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• pp.1113-1119
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• 2013

In this letter, a new approach is proposed for the design of a multi antenna for MIMO wireless devices. The proposed antenna covers various LTE(Long Term Evolution) service bands: band 17(704~746 MHz), band 13(746~787 MHz), band 5(824~894 MHz), and band 8(880~960 MHz). The proposed main antenna consists of a conventional monopole antenna with an inverted L-shaped slit for wideband operation. The proposed the LTE sub antenna is based on a switch loaded loop antenna structure, with a resonance frequency that can be controlled by capacitance of a logic circuit. The tuning technique for the LTE Rx antenna uses a RF MEMS(Micro-Electro mechanical system) to match the impedances to realize the bands of interest. Because the two proposed antennas are polarized orthogonally to each other, the ECC(Envelope Correlation Coefficient) characteristic between two antennas was measured to be very low (below 0.06) with an isolation characteristic below -20 dB between the two antennas in the operating overall LTE bands. The proposed antenna is particularly attractive for mobile devices that integrate LTE multiple systems.

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.5
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• pp.865-872
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• 2017

Recently, in response to the Internet age, the demand for hardware devices has been increasing, centering on the rapidly growing smart home field, due to the growth and management of sensor and control technology, mobile application, network traffic, big data management and cloud computing. In order to maintain the sustainable development of the hardware system, it is necessary to update the system, and the hardware device is absolutely necessary in real time processing of complex data (voice, image, etc.) as well as data collection. In this paper, we propose a method to simplify the control and communication method by integrating the hardware devices in two operating systems in a unified structure to solve the simultaneous control and communication method of hardware under different operating systems. The performance evaluation results of the proposed integrated hardware and the cloud control system connected to the cloud server are described and the main directions to be studied in the field of internet smart home are described.