• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.348-348
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• 2005

High capacitance MLCC has been enabled through the use of nickel electrodes to produce thinner layers at acceptable costs. High capacitance MLCC devices offer significant advantages to electrolytics such as tantalum and aluminum ; Lower ESR for high frequency applications. Non-polarized. Many process improvement have enabled this technology Higher dielectric constants Thinner dielectric and electrode layers through BME More accurate layer construction. This study is high capacitance MLCC electrical propertics. reliability, Analysis on DOE(Design Of Experiment) of the electical propertics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.284-285
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• 2005

Bi-2223 High-Temperature Superconducting(HTS) tape is one of the most widely used HTS tape for power application. Characteristics of the over current of HTS tape with different sheath are described. This paper presents the basic properties such as temperature and resistivity rise of the Bi-2223 HTS tape which is exposed to the over current. It is expected that results from this study can be utilized as basic data in designing superconducting power devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.133-134
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• 2005

When Power MOSFET is operated, it causes lots of heat, which influences negatively on the characteristics of the devices and shorten the lifespan of them. Therefore, a heat sink should be mounted on to emit the heat. In this experiment, we've found the changes of the characteristics of Thermal Transient of MOSFET when a heat sink is applied. In addition, we've found other changes when heat sink compound is applied as well.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.537-538
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• 2005

A way of measuring an efficiency of organic light-emitting diodes are studied. The efficiency is obtained from the current-voltage-luminance characteristics of the devices. Basically, number of charge carriers are obtained from the current-voltage characteristics, and the number of photons are obtained from the current of Si-photodetector. The organic light-emitting diodes are assumed as a lambertian light source and a program is made for calculating the efficiency. A device structure of ITO/TPD/$Alq_3$/Al is manufactured using thermal-vapor evaporation. This device is set into a measuring system and measured the efficiency. The efficiencies are measured using the lab-made program and commercially available equipments. The obtained values are similar to each other within 10% uncertainty.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.125-126
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• 2005

Recently semiconductor devices are required more smaller scale and more powerful performance. For smaller scale of device, multilayer structure is proposed. And, for the higher performance, interconnection material is change to copper, because copper has high EM(Electro-migration)and low resistivity. Then copper CMP process is a great role in a multilayer formation of semiconductor. Copper process is different from aluminum process. ECP process is one of the copper processes. In this paper, we focused on the defects tendency by copper thickness which filled using ECP process. we observed hump high and dishing. Conclusively, hump hight reduced at copper thickness increased Also dishing reduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.140-141
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• 2006

Background doping concentration (BDC) is proven to be a critical factor to affect the high current behavior of the extended drain NMOSFET (EDNMOS) devices. The EDNMOS device with low BDC suffers from strong snapback in the high current region, which results in poor electrostatic discharge (ESD) protection performance and high latchup risk. However, the strong snapback can be avoided in the EDNMOS device with high BDC. This implies that both the good ESD protection performance and the latchup immunity can be realized in terms of the EDNMOS by properly controlling its BDC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.412-413
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• 2006

The electrical conduction mechanism of ITO / Terbium tris - (1 - phenyl - 3 - methyl - 4 - (tertiarybutyryl) - pyrazol - 5 - one) triphenylphosphine oxide [$(tb-PMP)_3Tb-(Ph_3PO)$]/Mg/Al devices has been investigated. The calculation of electric field in single layer organic layer between cathode and anode shows the uniform distribution for the electron injection barrier of over 1.4 eV. The measured current-voltage curve shows well matching with the calculated curve based on the tunneling injection of electron under the uniform distribution of electric field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.122-124
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• 2006

Ta-Mo를 co-sputtering으로 증착하여 MOS-C(Capacitor)를 제작하였다. 열적 화학적 안정성을 판별하기 위해 $600^{\circ}C$, $700^{\circ}C$, $800^{\circ}C$ 에서 급속 열처리를 행하였고, C-V 측정으로 얻은 데이터로 평탄 전압, 일함수, EOT값을 계산 하였다. I-V 측정으로 누설 전류 특성을 파악 하였다. 위의 실험 데이터를 종합하여 폴리 실리콘 게이트를 대체할 차세대 게이트 물질로써 Ta-Mo 게이트 물질을 제안하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.97-98
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• 2006

High current behaviors of the grounded gate extended drain N-type metal-oxide-semiconductor field effects transistor (GG_EDNMOS) electro-static discharge (ESD) protection devices are analyzed. Simulation based contour analyses reveal that combination of BJT operation and deep electron channeling induced by high electron injection gives rise to the 2-nd on-state. Thus, the deep electron channel formation needs to be prevented in order to realize stable and robust ESD protection performance. Based on our analyses, general methodology to avoid the double snapback and to realize stable ESD protection is to be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.161-162
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• 2006

Scaling rules for TFT application devices have led to the necessity of ultra thin dielectric films and high-k dielectric layers. In this paper, The advantages of high concentration of nitrogen in silicon oxide layer deposited by using $N_2O$ in Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) reported about Ellipsometric measurement, Capacitance-Voltage characterization and processing conditions.