• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.106-107
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• 2007

We fabricated anodic aluminium oxides (AAO) on Si and sapphire substrates from the electrochemical reactions of thin AI films in an aqueous solution of oxalic acid. The thin AI films have deposited on Si and Sapphire substructure by using E-beam evaporation and thermal evaporation, respectively. The formation of AAO structures has investigated from FE-SEM measurement image and showed randomly distributed phase of nanoholes instead of the periodic lattice of photonic crystals. The AAO structure on sapphire shows the double layers of nanoholes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.427-427
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• 2007

The global applications of aspherics surfaces will expand rapidly on the electronics, optical components, communications, aerospace, defense, and medical optics devices etc. Especially, Asymmetric aspheric prism lens is one of the important parts in HMD(Head Mounted Display) because it affects dominantly on the optical performance of HMD. The mold core is the most important device to produce the plastic lenses by injection molding method. In this study, the mold cores for asymmetric aspheric prism lens were processed using fly-cutting method which is kind of the ultra precision processing and form accuracy and surface roughness of the cores were measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.60-61
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• 2007

In this paper, the p-channel poly Si thin-film transistors (Poly-Si TFT's) using formed by solid phase crystallization (SPC) on glass substrate were fabricated. And we propose an ONO(Oxide-Nitride-Oxide) multilayer as the gate insulator for poly-Si TFT's to indicate non-volatile memory (NVM) effect. Poly-Si TFT is investigated by measuring the electrical properties of poly-Si films, such as I-V characteristics, on/off current ratio. NVM characteristics is showed by measuring the threshold voltage change of TFT through I-V characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.7
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• pp.550-554
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• 2013

Carbon nanotubes (CNT) / polyvinylidene fluoride (PVDF) piezoelectric composite films for nanogenerator devices were fabricated by spray coating method. When the CNT/PVDF mixture solution passes through the spray nozzle with small diameter by the compressed nitrogen gas, electric charges are generated in the liquid by a triboelectric effect. Then randomly distributed ${\beta}$ phase PVDF film could be re-oriented by the electric field resulting from the accumulated electrical charges, and might be resulted in extremely one-directionally aligned ${\beta}$ phase PVDF film without additional electric field for poling. X-ray diffraction patterns were used to investigate crystal structure of the CNT/PVDF composite films. It was confirmed that they revealed extremely large portion of the ${\beta}$ phase PVDF crystalline in the film. Therefore we could obtain the poled CNT/PVDF piezoelectric composite films by the spray coating method without additional poling process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.11
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• pp.922-927
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• 2001

Single-layer green ELs was fabricated with using molecularly-dispersed Bu-PBD into poly-N-vinylcarbazole(PVK) which has low operating voltage and high quantum efficiency. A EL cell structure of glass substrate/indium-tin-oxide/PVK:Bu-PBD:C6(∼ 100nm)/Ca(20nm)/Al(20nm) was employed with variable doping concentration. The keys to obtain high quantum efficiency was excellent film forming capability of molecularly dispersed into PVK and appropriate combination of cathode for avoiding exciplex. We obtained the turn-on voltage of 4.2V and quantum efficiency of 0.52% at 0.lmol% of C6 concentration which has been improved about a factor of 50 in comparison with the undoped cell. The PL peak wavelengths wouldn\`t be turned by changing the concentration of the C6 dopant. Green EL emission peak and FWHM were 520nm and 70nm respectively. PL emission peak was obtained at 495nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.344-348
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• 2002

As microelectronics technology continues to progress, there is also a continuous demand on highly integration and miniaturization of systems. For example, it is desirable to package several integrated circuits together in multilayer structure, such as multichip modules, to achieve higher levels of compactness and higher performance. Passive components (i.e., capacitors, resistors, and inductors) are very important fort many MCM applications. In addition, the low-temperature co-fired ceramic (LTCC) process has considerable potential for embedding passive components in a small area at a low cost. In this paper, we investigate a method of statistically modeling integrated passive devices from just a small number of test structures. A set of LTCC inductors is fabricated and their scattering parameters (s-parameters) are measured for a range of frequencies from 50MHz to 5GHz. An accurate model for each test structure is obtained by using a building block based modeling methodology and circuit parameter optimization using the HSPICE circuit simulator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.731-734
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• 2000

The characterization of Zinc diffusion processes applied fur high-speed avalanche photodiodes has been examined. The different diffusion process conditions for InP test structures were explored. The Zinc diffusion profiles, such as the diffusion depth and the Zinc dopant concentration, were examined using secondary ion mass spectrometry with varying the process variables and material parameters. It is observed that the diffusion profiles are severely impacted on the process parameters, such as the amount of Zn$_3$P$_2$source and the diffusion time, as well as material parameters, such as doping concentration of diffusion layer. These results can be utilized for the high-speed avalanche photodiode fabrication.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.347-352
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• 1998

In this paper, the extraction and optimization of SPICE parameters on SONOSFET for NVSM circuit design were discussed. SONOSFET devices with different channel widths and lengths were fabricated using conventional 1.2 um n-well CMOS process. And, electric properties for dc parameters and capacitance parameters were measured on wafer. SPICE parameters for the SONOSFET were extracted from the UC Berkeley level 3 model for the MOSFET. And, local optimization of Ids-Vgs curves has carried out in the bias region of subthreshold, linear, saturation respectively. Finally, the extracted SPICE parameters were optimized globally by comparing drain current (Ids), output conductance(gds), transconductance(gm) curves with theoretical curves in whole region of bias conditions. It is shown that the conventional model for the MOSFET can be applied to the SONOSFET modeling except sidewalk effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.794-797
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• 2000

The fabrication of high quality superconducting thin films using pulsed laser deposition (PLD) has been reported to find optimized processing conditions and to make the millimeter-wave devices. High temperature superconducting (HTS) YBCO films were prepared on MgO (10${\times}$10${\times}$0.5mm) substrates by the PLD. The 3 pole bandpass filter with the center frequency of 22 GHz for satellite communication was designed consisting of hairpin coupled-lines to reduce the configuration in size. YBCO films are c-axis oriented and show superconductive transition temperatures of 88∼89 K with the transition widths < 0.5 K. The insertion loss of passband at 70 K was about 5 dB. The measured frequency response of superconducting filter will be compared with the simulation result.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.798-801
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• 2000

For the performance enhancement of communication system, high quality filters are required. Also a minimization of size of filter is required for the interation of devices in the limited area. Conventional metal filters made of copper can be substituted by high quality high temperature superconducting(HTS) films for better performance. Hairpin type filters have been designed with the center frequency 14 GHz for the size reduction. 3-pole and 4-pole filters centered at 14 GHz with the bandwidth of about 300 MHz were designed and fabricated. With the simulation results, the frequency responses showed low insertion loss and sharp skirts characteristics. The frequency response of HTS 14 GHz fi1ter was measured at 77 K and compared with the simulation results. We have compared YBCO filters and copper filters which were made with the same design rules. Simulated and measured frequency responses reveal that HTS YBCO hairpin type bandpass filters show better performance than copper filters.