• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.586-591
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• 2004

We studied the dependence of hot-tarrier-induced degradation characteristics on nitrogen concentration in NO(Nitrided-Oxide) gate of nMOS, under ac and dc stresses. The $\Delta$V$_{t}$ and $\Delta$G$_{m}$ dependence of nitrogen concentration were observed, We observed that device degradation was suppressed significantly when the nitrogen concentration in the gate was increased. Compared to $N_2$O oxynitride, NO oxynitride gate devices show a smaller sensitivity to ac stress frequency. Results suggest that the improved at-hot carrier immunity of the device with NO gate may be due to the significantly suppressed interface state generation and neutral trap generation during stress.ess.

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.26-32
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• 1997

The gate induced drain leakage(GIDL) current under the stress of worse case in -MOSFET's with ultrathin gate oxides has been measured and characterized. The GIDL current was shown that P-MOSFET's of the thicker gate oxide is smaller than that of the thinner gate oxide. It was the results that the this cur-rent is decreased with the increamental stress time at the same devices.It is analyzed that the formation components of GIDL current are both energy band to band tunneling at high gate-drain voltage and energy band to defect tunneling at low drain-gate voltage. The degradations of GIDL current was analyzed the mechanism of major role in the hot carriers trapping in gate oxide by on-state stress.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.201-204
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• 2001

In this paper, for modeling of electrical characteristics in Poly Silicon Thin Film Transistors with process parameters set up optimum values. So, the I-V characteristics of poly silicon TFT parameters are examined and simulated in terms of the variations in process parameter. And these results compared and analyzed simulation values with examination value. The simulation program for characteristic analysis used SUPREM IV for processing, Matlab for modeling by mathematics, and SPICE for electric characteristic of devices. Input parameter for simulation characteristics is like condition of device process sequence, these electric characteristic of I$_{D}$-V$_{D}$, I$_{D}$-V$_{G}$, variations of grain size. The Gate oxide thickness of poly silicon are showed similar results between real device characteristics and simulation characteristics.ristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.189-192
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• 2001

Recently, STI process is getting attention as a necessary technology for making high density of semiconductor by devices isolation method. However, it does have various problems caused by CMP process, such as torn oxide defects, nitride residues on oxide, damages of si active region, contaminations due to post-CMP cleaning, difficulty of accurate end point detection in CMP process, etc. In this work, the various defects induced by CMP process was introduced and the above mentioned Problems of CMP process was examined in detail. Finally, the guideline of future CMP process was presented to reduce the effects of these defects.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.437-440
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• 2000

In this study, the interfacial dielectric breakdown phenomenon of interface between Epoxy and Rubber was discussed, which affects the stability of insulation system of power delivery devices. The breakdown strength of specimens are observed by applying high AC voltage at the room temperature. The breakdown times under the constant voltage below the breakdown voltage were gained. As constant voltage is applied, the breakdown time is proportion to the breakdown strength. The life exponent n is gained by inverse power law and the long time breakdown life time can be evaluated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.250-253
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• 1997

Generally, Piezoelectric ceramics based lead-zirconate-titanate(PZT) system are well known to use in high power devices. In this pacer. Pb(Mn$\sub$1/3//Sb$\sub$2/3/)O$_3$(PMS) ceramics which have been shown to be adaptable for a high power usage is introduced. The stability of piezoelectric properties in PZ-PT-PMS solid solution system such as piezoelectric constants. electromechanical coupling coefficient and mechanical quality factor is discussed by the addition effect of CeO$_2$ as a additive. The CeO$_2$ ratio ranges from 0 to 2 wt%. The resonant and anti-resonant frequencies. mechanical quality factor, and force factor are also measured as a function of vibration velocity

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.525-528
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• 1997

In this study, Eu(TTA)$_3$(phen) was synthesized and its films were prepared by vapor deposition method. Its films were characterized by UV-Vis absorption spectroscopy, Atomic Force Microscopy(AFM) and Photoluminescence(PL) measurements. Their electroluminescent(EL) characteristics were investigated by PL measurements, where a cell structure of glass substrate/ITO/Eu(TTA)$_3$(phen)/Al was employed. It was found that its films were well prepared without any decomposition and the film thickness could be controlled by adjusting the amount of Eu(TTA)$_3$(phen) in a boat. The EL spectrum of these films was almost the same as that of PL spectrum of these films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.633-640
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• 2004

We have studied color tracking of a fringe-field driven homogenously aligned nematic liquid crystal (LC) cell with negative dielectric anisotropy and compared it with other devices such as the twisted nematic(TN) and in-plane switching(IPS) modes. According to studies, the TN device shows bluish color at grey scale and even at a low retardation cell it cannot avoid color tracking. The authentic IPS device having cell retardation value of 0.23 ${\mu}{\textrm}{m}$ also shows bluish white color. However, the FFS device shows excellent color tracking characteristics even at high retardation value of the cell while keeping high transmittance and greenish white.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.90-93
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• 1994

A surface acoustic wave(SAW) sensor for the detection of odorants has been constructed by depositing various phospholipids and fatty acids onto the surface of the SAW device. Applying the Langmuir-Blodgett technique. it was possible to deposit the optimal number of layer which was found to be between 10 and 20. The characteristics of a SAW device operating at 310 MHz deposited with phosphatidyl choline were analysed. Menthone, amylacetate, acetion, and other organic gases sho7\\\\`ed different affinities to the coated lipids. An explanation is given for differant odorant affinities based on the monolayer properties of phospholipids. The identification of odorants depending on the type of lipid used for coating is discussed in terms of a comparison of their normalized resonant frequency chi It pat terns. Using a number of different lipid-coated SAW devices. odorants can be identified by a computerized pattern recognition algorithm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.208-212
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• 2003

Silicon transient voltage suppressors (TVSs) are clamping devices that limit voltage spikes by low impedance avalanche breakdown of a rugged silicon PN junction. They are used to protect sensitive components from electrical overstress such as that caused by induces lightning, inductive load switching and electrostatic discharge. In this paper, we present static and dynamic characteristics of TVS diode using thermal analysis simulation software. And also, it is presented that the thermal dissipation characteristics of TVS diode in the transient state.