• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.6
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• pp.1081-1086
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• 2017

The measurement and control device which is for controlling the best mixture rate is needed to produce the best quality concrete in Batch Plant. Present the workers do the measurement and control with each equipped devices such as a indicator, PLC and a scale. That is difficult to use especially for beginner in field. In this paper, we developed the integrated measurement and control system which is composed of hardware with PCB and software. It is easy to use for beginner worker in plant field.

• Journal of information and communication convergence engineering
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• v.8 no.4
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• pp.449-452
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• 2010

We have analyzed channel doping and dimensions(channel length, width and thickness) for the optimum subthreshold characteristics of DG(Double Gate) MOSFET based on the model of MicroTec 4.0. Since the DGMOSFET is the candidate device to shrink short channel effects, the determination of design rule for DGMOSFET is very important to develop sub-100nm devices for high speed and low power consumption. As device size scaled down, the controllability of dimensions and oxide thickness is very low. We have analyzed the short channel effects for the variation of channel dimensions, and found the design conditions of DGMOSFET having the optimum subthreshold characteristics for digital applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.382-385
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• 2009

In this study, we studied switching characteristics of germanium selenide(Ge-Se)/silver(Ag) contact formed by photodoping for use in programmable metallization cell devices. We have been investigated the switching characteristics of Ag-doped chalcogenide thin films. Changed resistance range by direction of applied voltage is about $1\;M{\Omega}$ $\sim$ hundreds of $\Omega$. The cause of these resistance change can be thought the same phenomenon such as resistance variation of PMC-RAM. The results imply that the separated Ag-ions react the atoms or defects in chalcogenide thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.271-272
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• 2008

We fabricated a pentacene thin-film transistor with Ni/Ag source/drain electrodes. Also, we obtained similar electrical characteristics as compared with source/drain electrode with Au. This device was found to have a field-effect mobility of about 0.021 $cm^2$/Vs, a threshold voltage of -5, -7 V, an subthreshold slope of 2.0, 4.5 V/decade, and an on!off current ratio of $3.6\times10^5$, $2.0\times10^6$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.18-19
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• 2008

Polycrystalline(poly) 3C-SiC film is a promising structural material for M/NEMS used in harsh environments, bio and fields. In order to realize poly 3C-SiC based M/NEMS devices, the electrical properties of poly 3C-SiC film have to be optimized. The n-type poly 3C-SiC thin film is deposited by APCVD using HMDS$(Si_2(CH_3)_6)$ as single precursor and are in-situ doped using N2. Resistivity values as low as 0.014 $\Omega$cm were achieved. The carrier concentration increased with doping from $3.0819\times10^{17}$ to $2.2994\times10^{19}cm^{-3}$ and electronicmobility increased from 2.433 to 29.299 $cm^2/V{\cdot}s$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.69-70
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• 2008

Micro resonators have been actively investigated for bio/chemical sensors and RF M/NEMS devices. Among various materials, SiC is a very promising material for micro/nano resonators since the ratio of its Young's modulus, E, to mass density, $\rho$, is significantly higher than other semiconductor materials, such as, Si and GaAs. Polycrystalline 3C-SiC cantilever with different lengths were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and its fundamental resonance was measured by a laser vibrometer in air and vacuum at room temperature, respectively. For the cantilever with $100{\mu}m$ length, $10{\mu}m$width and $1.3{\mu}m$ thickness, the fundamental frequency appeared at 147.2 kHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.197-198
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• 2008

이 논문에서는 다양한 SiNx의 band gap을 이용하여 MIS 구조의 메모리 소자를 제작하고 이를 분석하였다. SiNx 박막은 증착 가스비에 따라 다양한 band gap을 가지게 된다. 본 실험에서는 $SiH_4$ 가스와 $NH_3$ 가스를 사용하여 SiNx 박막을 증착하였다. n-type 단결정 실리콘 기판위에 다양한 가스비에 따라 단일 SiNx 박막을 증착 및 분석하였고, 이를 이용하여 NNN 구조의 MIS 소자를 제작하였다. 제작된 소자는 4.6 V의 hysteresis roof 폭과 1000 초 후에 84.8 %의 retention 값을 갖는 우수한 메모리 특성을 보였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.74-75
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• 2008

This work has suggested corrugation beam as a new structure for mechanical resonators. Micro beam resonators based on 3C-SiC films which have two side corrugations along the length of beams were simulated by finite-element modeling and compared to a flat rectangular beam with the same dimension. With the dimension of $36\times12\times0.5{\mu}m^3$, the flat cantilever has resonant frequency of 746 kHz. Meanwhile, this frequency reaches 1.252 MHz with the corrugated cantilever which has the same dimension with flat type but corrugation width of $6{\mu}m$ and depth of $0.4{\mu}m$. It is expected that mechanical resonators with corrugations will be very helpful for the research of sensing devices with high-resolution, high-performance oscillators and filters in wireless communications as well as measurement in basic physics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.356-357
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• 2008

The effects of $O_2$ plasma ashing process for surface treatment of nano-wire Bio-FET were investigated. In order to evaluate the plasma damage introduced by $O_2$ plasma ashing, a back-gate biasing method was developed and the electrical characteristics as a function of $O_2$ plasma power were measured. Serious degradations of electrical characteristics of nano-wire Bio-FET were observed when the plasma power is higher than 50 W. For curing the plasma damages, a forming gas anneal (2 %, $H_2/N_2$) was carried out at $400^{\circ}C$. As a result, the electrical characteristics of nano-wire Bio-FET were considerably recovered.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.409-410
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• 2008

We studied dielectric properties of Organic Light-emitting Diodes(OLEDs) depending on applied voltage of AF(Amorphous Polytetrafluoroethylene), material of hole injection layer in structure of ITO/hole injection layer (AF)/Al. AF is deposited 5 [nm] as deposition rate of 0.1~0.2 [$\AA$/s] in high vacuum of $5\times10^{-6}$ [Torr]. In result of these studies, we can know dielectric properties of OLEDs. The impedance decreases as the applied voltage increases and the Cole-Cole plots of devices are decreases as the applied voltage increases.