• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05b
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• pp.31-34
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• 2003

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by chemical and mechanical polishing(CMP) process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of sapphire crystalline wafer at surfaces has a full width at half maximum 89 arcses. The surfaces of sapphire wafers were mechanically affected by residual stress and surface default. Sapphire wafers's waveness has higher abrasion rate in the edge of the wafer than its center due to Newton's Ring interference.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.296-299
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• 2008

The effects of radio frequency (RF) source power for decoupled plasma nitridation (DPN) process on the electrical properties and Fowler-Nordheim (FN) stress immunity of the oxynitride gate dielectrics for deep nano-technology devices has been investigated. With increase of RF source power, the threshold voltage (Vth) of a NMOS transistor(TR) decreased and that of a PMOS transistor increased, indicating that the increase of nitrogen incorporation in the oxynitride layer due to higher RF source power induced more positive fixed charges. The improved off-current characteristics and wafer uniformity of PMOS Vth were observed with higher RF source power. FN stress immunity, however, has been degenerated with increasing RF source power, which was attributed to the increased trap sites in the oxynitride layer. With the experimental results, we could optimize the DPN process minimizing the power consumption of a device and satisfying the gate oxide reliability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.3
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• pp.182-186
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• 2012

Resistance-change Random Access Memory(ReRAM) memory, which utilizes electrochemical control of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this work, we investigated the nature of thin films formed by photo doping of $Ag^+$ ions into chalcogenide materials for use in solid electrolyte of Resistance-change RAM devices and switching characteristics according to field-effect.

• Carbon letters
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• v.11 no.4
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• pp.347-356
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• 2010

Recently, the use of thermal conductive polymeric composites is growing up, where the polymers filled with the thermally conductive fillers effectively dissipate heat generated from electronic components. Therefore, the management of heat is directly related to the lifetime of electronic devices. For the purpose of the improvement of thermal conductivity of composites, fillers with excellent thermally conductive behavior are commonly used. Thermally conductive particles filled polymer composites have advantages due to their easy processibility, low cost, and durability to the corrosion. Especially, carbon-based 1-dimensional nanomaterials such as carbon nanotube (CNT) and carbon nanofiber (CNF) have gained much attention for their excellent thermal conductivity, corrosion resistance and low thermal expansion coefficient than the metals. This paper aims to review the research trends in the improvement of thermal conductivity of the carbon-based materials filled polymer composites.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.58.1-58.1
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• 2012

Direct write technologies provide flexible and economic means to manufacture low-cost large-area electronics. In this regard inkjet printing has frequently been used for the fabrication of electronic devices. Full advantage of this method, which is capable of reliable direct patterning with line and space dimensions in the 10 to 100 um regime, is only made with all-solution based processing. Among these printable electronic materials, silver and copper nanoparticles have been used as interconnecting materials. Specially, solutions of organic-encapsulated silver and copper nanoparticles may be printed and subsequently annealed to form low-resistance conductor patterns. In this talk, we describe novel processes for forming silver nanoplates and copper ion complex which have unique properties, and discuss the optimization of the printing/annealing processes to demonstrate plastic-compatible low-resistance conductors. By optimizing both the interconnecting materials and the surface treatments of substrate, it is possible to produce particles that anneal at low-temperatures (< $200^{\circ}C$) to form continuous films having low resistivity and appropriate work function for formation of rectifying contacts.

• Journal of the Semiconductor & Display Technology
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• v.13 no.3
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• pp.51-55
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• 2014

Ni-CNT(Carbon Nanotubes) composite coating is often used for the surface treatment of mechanical/electronic devices to improve the properties of the Ni coating. For the Ni-CNT coating, the dispersion of CNT fibers is a critical process. In this study, ultrasonic treatment instead of the conventional ball milling was attempted as a dispersion method for the electroless Ni-CNT coating. SEM-EDX analysis was performed and contact angle, sheet resistance, and micro-hardness were measured. Results showed that the ultrasonic treatment was comparable to the ball milling, as a dispersion method, but the difference was negligible. However, combined ball milling and ultrasonic treatment(double treatment) showed much improved micro-hardness value, above 350Hv(close to the value obtained by the Ni-CNT electroplating). In addition, electroless Ni-CNT(double-treated) coatings formed on the thin Ni film deposited by the electroless plating(double coating) showed better mechanical properties. Thus, double treatment and double coating are suggested as an improved electroless Ni-CNT coating method.

• Journal of the Semiconductor & Display Technology
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• v.15 no.4
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• pp.22-26
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• 2016

In this paper, we measured the efficiency of the receiver for 5.8GHz Microwave Smartphone Charging. We have designed and fabricated 1W and 2W power amplifier, respectively. A 1W power amplifier used a TC3531 power device of TRANSCOM Inc. In addition, a 2W power amplifier using the two TC3531 devices was constructed with divider and combiner. We used the Wilkinson divider theory for divider and combiner. The voltage was measured using the 1W and 2W power amplifier and integrated receivers to the distance of 50cm.

• Journal of the Semiconductor & Display Technology
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• v.16 no.1
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• pp.102-105
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• 2017

Currently, the size of the electronic device is in the nano area. In order to control the movements of these nanoscale devices, one should be able to understand the physical phenomena in the nano area. Recently, due to carbon nanotubes and mechanical outstanding electrical conductivity and mechanical characteristics of the carbon nanotubes and Graphene behaves to apply. Efforts have been active. There are various tubes with a radius of a in a compact mass in the form of a Multi walled carbon nanotubes in different between the radius. Van der Waals force can move smoothly without friction with each other by the nanoscale motor turning, using the properties, making. This is the lightest solids per unit area on the thickness is electrical atomic layer one of the substance and the electrical conductivity, the best material and mechanical characteristics are very much. Many studies because great is the ideal nanoelectromechanical device of material is being considered. In this study, electrical resonator for a new structure proposed and the nature and methodology would like to come up.

• ETRI Journal
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• v.39 no.6
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• pp.803-812
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• 2017

A decode-and-forward system with an energy-harvesting relay is analyzed for the case when an arbitrary number of independent interference signals affect the communication at both the relay and the destination nodes. The scenario in which the relay harvests energy from both the source and interference signals using a time switching scheme is analyzed. The analysis is performed for the interference-limited Nakagami-m fading environment, assuming a realistic nonlinearity for the electronic devices. The closed-form outage probability expression for the system with a nonlinear energy harvester is derived. An asymptotic expression valid for the case of a simpler linear harvesting model is also provided. The derived analytical results are corroborated by an independent simulation model. The impacts of the saturation threshold power, the energy-harvesting ratio, and the number and power of the interference signals on the system performance are analyzed.

• Journal of the Microelectronics and Packaging Society
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• v.4 no.2
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• pp.1-16
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• 1997

Modern electronic components require its sophistication to meet the stringent requirements which are demanded for high tech industry. In an attempt to meet to such demand miniaturization of the components has been considrably progressed to increase its circuit density. High density of the components can be achieved by an innovative technology of design and manufacturing with functionally improved or new materials such as small bulk devices thick films and thin films circuits (2D). Recently many efforts have been extensively made in the community of the Hybrid Microelectronics through out world. In this paper an approach is introduced in realizing a sophisticated passive circuit for the microelectronics applications by use of hybrid thick/thin films technology. The merit of this technology is discussed and the future trend is speculated.