• Title/Summary/Keyword: Electronic conductivity

검색결과 1,035건 처리시간 0.031초

III, IV족 불순물이 첨가된 ZnO의 전자상태계산 (Calculation on Electronic Structure of ZnO with Impurities Belonging to III and IV Family)

  • 이동윤;김현주;구보근;이원재;송재성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.309-312
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    • 2004
  • The electronic structure of ZnO oxide semiconductor having high optical transparency and good electric conductivity was theoretically investigated by $DV-X_{\alpha}$(the discrete variation $X_{\alpha}$) method, which is a sort of the first principle molecular orbital method using Hatre-Fock-Slater approximation. The electrical and optical properties of ZnO are seriously affected by the addition of impurities. The imnurities are added to ZnO in order to increase the electric conductivity of an electrode without losing optical transparency. In this study, the effect of impurities of III and IV family on the band structure, impurity levels and the density of state of ZnO were investigated. The cluster model used for calculations was $[MZn_{50}O_{53}]^{-2}$(M=elements belonging to III and IV family).

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β-Ga2O3/4H-SiC MESFETs에서의 Self-Heating (Self-Heating Effects in β-Ga2O3/4H-SiC MESFETs)

  • 김민영;서현수;서지우;정승우;이희재;변동욱;신명철;;구상모
    • 한국전기전자재료학회논문지
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    • 제35권1호
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    • pp.86-92
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    • 2022
  • Despite otherwise advantageous properties, the performance and reliability of devices manufactured in β-Ga2O3 on semi-insulating Ga2O3 substrates may degrade because of poorly mitigated self-heating, which results from the low thermal conductivity of Ga2O3 substrates. In this work, we investigate and compare self-heating and device performance of β-Ga2O3 MESFETs on substrates of semi-insulating Ga2O3 and 4H-SiC. Electron mobility in β-Ga2O3 is negatively affected by increasing lattice temperature, which consequently also negatively influences device conductance. The superior thermal conductivity of 4H-SiC substrates resulted in reduced β-Ga2O3 lattice temperatures and, thus, mitigates MESFET drain current degradation. This, in turn, allows practically reduced device dimensions without deteriorating the performance and improved device reliability.

Oxygen Permeability Measurement of $ZrO_2-TiO_2-YB_2O_3$ Mixed Conductor

  • Hitoshi Naito;Kim, Hitoshi ishima;Toru Takahashi;Hiroo Yugami
    • The Korean Journal of Ceramics
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    • 제6권2호
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    • pp.124-128
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    • 2000
  • Electrical properties of $ZrO_2-TiO_2Yb_2O_3$mixed conductor (Ti-YbSZ) were investigated. This mixed conductor can be applied as a membrane for gas separation at high temperatures. The total conductivity decreased with increasing the $TiO_2$concentration. At high temperatures, the rate of the conductivity degradation became smaller than that at low temperatures. From the oxygen partial pressure dependence of the total conductivity of Ti-YbSZ, the electronic conductivity increased with increasing $TiO_2$concentration at low oxygen partial pressures and at high temperatures. Both 15 and 20 mol% $TiO_2$doped YbSZ showed high oxygen permeability. Mixed conductors, which has high $TiO_2$concentration in YbSZ, are promising materials for using as a membrane for gas separation at high temperatures.

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Computational Simulations of Thermoelectric Transport Properties

  • Ryu, Byungki;Oh, Min-Wook
    • 한국세라믹학회지
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    • 제53권3호
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    • pp.273-281
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    • 2016
  • This review examines computational simulations of thermoelectric properties, such as electrical conductivity, Seebeck coefficient, and thermal conductivity. With increasing computing power and the development of several efficient simulation codes for electronic structure and transport properties calculations, we can evaluate all the thermoelectric properties within the first-principles calculations with the relaxation time approximation. This review presents the basic principles of electrical and thermal transport equations and how they evaluate properties from the first-principles calculations. As a model case, this review presents results on $Bi_2Te_3$ and Si. Even though there is still an unsolved parameter such as the relaxation time, the effectiveness of the computational simulations on the transport properties will provide much help to experimental scientist researching novel thermoelectric materials.

펄스레이저법으로 증착 제조된 AlN박막의 타겟 효과 (Effect of Targets on Synthesis of Aluminum Nitride Thin Films Deposited by Pulsed Laser Deposition)

  • 정준기;하태권
    • 소성∙가공
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    • 제29권1호
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    • pp.44-48
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    • 2020
  • Aluminum nitride (AlN), as a substrate material in electronic packaging, has attracted considerable attention over the last few decades because of its excellent properties, which include high thermal conductivity, a coefficient of thermal expansion that matches well with that of silicon, and a moderately low dielectric constant. AlN films with c-axis orientation and thermal conductivity characteristics were deposited by using Pulsed Laser Deposition (PLD). The epitaxial AlN films were grown on sapphire (c-Al2O3) single crystals by PLD with AlN target and Y2O3 doped AlN target. A comparison of different targets associated with AlN films deposited by PLD was presented with particular emphasis on thermal conductivity properties. The quality of AlN films was found to strongly depend on the growth temperature that was exerted during deposition. AlN thin films deposited using Y2O3-AlN targets doped with sintering additives showed relatively higher thermal conductivity than while using pure AlN targets. AlN thin films deposited at 600℃ were confirmed to have highly c-axis orientation and thermal conductivity of 39.413 W/mK.

스퍼터링 법으로 증착한 CdS 박막의 광전도도 특성 평가

  • 허성기;장동미;최명신;안준구;성낙진;윤순길
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.81-81
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    • 2008
  • Applications of CdS films in this study are to exhibit a high conductivity when they are exposed at light with visible wavelength and sequentially to show a low conductivity in dark state. For this purpose, CdS films should have a high photosensitivity, still maintaining a high conductivity at a visible light. In this study, CdS films were prepared at room temperature on glass substrates by rf magnetron sputtering. In order to increase the photo-conductivity in visible light, various defect levels should be located within the CdS band gap. In order to nucleate the defect sites within the CdS band gap, CdS films were deposited on glass substrates at room temperature using various $H_2$/(Ar+$H_2$) flow ratios by an rf magnetron sputtering. Through the investigation of the structural and photoconductive properties of CdS films by an addition of hydrogen, the relationship between photo- and dark-resistance in CdS films was investigated in detail. 200-nm-thick CdS films for photoconductive sensor applications were prepared at various $H_2$/(Ar+$H_2$) flow ratios on glass substrates at room temperature by rf magnetron sputtering. Sulfur concentration in CdS films crystallized at room temperature with (002) preferred orientation depends directly on the hydrogen atmosphere and the surface roughness of the films gradually increases with increasing hydrogen atmosphere. Films deposited at 8% of $H_2$/(Ar+$H_2$) exhibit an abrupt decrease of dark- and photo-resistance, showing a low photo-sensitivity ($R_{dark}/R_{photo}$). Onthe other hand, films deposited at a hydrogen atmosphere of 42% exhibit a photo-sensitivity of $5\times10^3$, maintaining a photo-resistance of an approximately $2\times10^4\Omega$/square. The dark- and photo-resistance values of CdS films were related with a composition, surface roughness, and defect sites within the band gap.

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상온 환경에서 PEDB를 이용한 울릉도 시추코어의 열전도도 예비 측정 (Thermal Conductivity Measurement of Rock Cores from Ulleung Island Using PEDB System at Room Temperature)

  • 이상규;이태종
    • 지구물리와물리탐사
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    • 제19권3호
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    • pp.121-130
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    • 2016
  • 다양한 지름의 암석코어에 대해 비교적 간편하고 정확하게 열전도도를 측정할 수 있는 divided bar형 열전도도 측정 시스템인 PEDB (potable electronic divided bar system)를 도입 이용하여 열전도도 측정시 고려해야 할 요소에 대해 검토하였다. 또한, 지열조사를 위해 울릉도에서 채취한 70개의 코어시료에 대해 적용하고 그 특성을 살펴보았다. 열전도도 측정에 있어서 실내온도의 변화가 가장 큰 영향을 미치므로 되도록 실내온도의 변화가 적거나 항온 환경에서 측정하는 것이 바람직하다. 열원(heat source)의 온도, 안정된 상태에서 평균하는 온도의 구간 등에 의한 영향은 실내온도 변화에 비해 미미하다. 열접촉 보조제인 바셀린을 사용하면 시편의 열전도도가 다소 높게 평가되고 특히 접촉면이 고르지 않은 암석시편에서는 그 차이가 더 크게 나타난다. 하나의 시편에 대해 반복 측정할 때, 실내온도가 $1^{\circ}C$ 이내로 유지된다면 표준시편에서는 ${\pm}0.3%$ 이내, 암석시편에서는 ${\pm}4%$ 이내의 좋은 반복성을 얻을 수 있다. 울릉도의 두 지열 조사공에서 얻은 암석코어의 열전도도는 심도 증가에 따라서 대체로 열전도도가 커지는 경향이 있으나 암종 변화와 특별한 상관성을 보이지는 않았다.

ASTM D5470 방법으로 연강과 스테인리스강의 열전도도 측정시 열그리스의 영향 (Effect of Thermal Grease on Thermal Conductivity for Mild Steel and Stainless Steel by ASTM D5470)

  • 조영욱;한병동;이주호;박성혁;백주환;조영래
    • 한국재료학회지
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    • 제29권7호
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    • pp.443-450
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    • 2019
  • Thermal management is a critical issue for the development of high-performance electronic devices. In this paper, thermal conductivity values of mild steel and stainless steel(STS) are measured by light flash analysis(LFA) and dynamic thermal interface material(DynTIM) Tester. The shapes of samples for thermal property measurement are disc type with a diameter of 12.6 mm. For samples with different thickness, the thermal diffusivity and thermal conductivity are measured by LFA. For identical samples, the thermal resistance($R_{th}$) and thermal conductivity are measured using a DynTIM Tester. The thermal conductivity of samples with different thicknesses, measured by LFA, show similar values in a range of 5 %. However, the thermal conductivity of samples measured by DynTIM Tester show widely scattered values according to the application of thermal grease. When we use the thermal grease to remove air gaps, the thermal conductivity of samples measured by DynTIM Tester is larger than that measured by LFA. But, when we did not use thermal grease, the thermal conductivity of samples measured by DynTIM Tester is smaller than that measured by LFA. For the DynTIM Tester results, we also find that the slope of the graph of thermal resistance vs. thickness is affected by the usage of thermal grease. From this, we are able to conclude that the wide scattering of thermal conductivity for samples measured with the DynTIM Tester is caused by the change of slope in the graph of thermal resistance-thickness.

상변화 메모리 응용을 위한 ${Ge_1}{Se_1}{Te_2}$ 비정질 칼코게나이드 박막의 전도 록성 (Conductivity Characteristics of ${Ge_1}{Se_1}{Te_2}$ Amorphous Chalcogenide Thin Film for the Phase-Change Memory Application)

  • 최혁;김현구;조원주;정홍배
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.32-33
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    • 2006
  • As next generation nonvolatile memory, chalcogenide-based phase change memory can substitute for a conventional flash memory from its high performance. Also, fast writing speed, low writing voltage, high sensing margin, low power consumption and repetition reliability over $10^{15}$ cycle shows its possibility. At our laboratory, we invented ${Ge_1}{Se_1}{Te_2}$ material to alternate with conventional ${Ge_2}{Sb_2}{Te_5}$ for improve its ability. We respect the ${Ge_1}{Se_1}{Te_2}$ material can be a solution for high power consumption problem and long time at 'set' performance. A conductivity experiment from variable temperature was performed to see reliability of repetition at read and write performance. Compare with conventional ${Ge_2}{Sb_2}{Te_5}$ material, these two materials are used as complex compound to get the finest parameter.

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리튬폴리머전지용 정극활물질 LiFePO4의 전기화학적 특성 (Electrochemical Properties of LiFePO4 Cathode Materials for Lithium Polymer Batteries)

  • 공명철;김현수;구할본
    • 한국전기전자재료학회논문지
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    • 제19권6호
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    • pp.519-523
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    • 2006
  • $LiFePO_4$ has been received attention as a potential cathode material for the lithium secondary batteries. In our study, $LiFePO_4$ cathode active materials were synthesized by a solid-state reaction. It was modified by coating $TiO_2$ and carbon in order to enhance cyclic performance and electronic conductivity. $TiO_2$ and carbon coatings on $LiFePO_4$ materials enhanced the electronic conductivity and its charge/discharge capacity. For lithium polymer battery applications, $LiFePO_4$/solid polymer electrolyte (SPE)/Li and $LiFePO_{4}-TiO_{2}/SPE/Li$ cells were characterized by a cyclic voltammetry and charge/discharge cycling. The electrode with $LiFePO_{4}-carbon-TiO_{2}$ in PVDF-PC-EC-$LiClO_{4}$ electrolyte showed promising capacity of above 100 mAh/g at 1C rate.