• Transactions on Electrical and Electronic Materials
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• v.18 no.6
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• pp.323-329
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• 2017

This reports the electrical behavior, bonding structure and Schottky contact of gallium-zinc-oxide (GZO) thin film annealed at $100{\sim}400^{\circ}C$. The mobility of GZO with high density of PL spectra and crystal structure was also increased because of the structural matching between GZO and Si substrate of a crystal structure. However, the GZO annealed at $200^{\circ}C$ with an amorphous structure had the highest mobility as a result of a band to band tunneling effect. The mobility of GZO treated at low annealing temperatures under $200^{\circ}C$ increased at the GZO with an amorphous structure, but that at high temperatures over $200^{\circ}C$ also increased when it was the GZO of a crystal structure. The mobility of GZO with a Schottky barrier (SB) was mostly increased because of the effect of surface currents as well as the additional internal potential difference.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.347-347
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• 2012

Nickel Oxide (NiO) is a transition metal oxide of the rock salt structure that has a wide band gap of 3.5 eV. It has a variety of specialized applications due to its excellent chemical stability, optical, electrical and magnetic properties. In this study, we concentrated on the application of NiO thin film for transparent conducting oxide. The energy band structure, electronic and optical properties of Nickel Oxide (NiO) thin films grown on Si by using electron beam evaporation were investigated by X-Ray Photoelectron Spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and UV-Spectrometer. The band gap of NiO thin films determined by REELS spectra was 3.53 eV for the primary energies of 1.5 keV. The valence-band offset (VBO) of NiO thin films investigated by XPS was 3.88 eV and the conduction-band offset (CBO) was 1.59 eV. The UV-spectra analysis showed that the optical transmittance of the NiO thin film was 84% in the visible light region within an error of ${\pm}1%$ and the optical band gap for indirect band gap was 3.53 eV which is well agreement with estimated by REELS. The dielectric function was determined using the REELS spectra in conjunction with the Quantitative Analysis of Electron Energy Loss Spectra (QUEELS)-${\varepsilon}({\kappa},{\omega})$-REELS software. The Energy Loss Function (ELF) appeared at 4.8, 8.2, 22.5, 38.6, and 67.0 eV. The results are in good agreement with the previous study [1]. The transmission coefficient of NiO thin films calculated by QUEELS-REELS was 85% in the visible region, we confirmed that the optical transmittance values obtained with UV-Spectrometer is the same as that of estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS within uncertainty. The inelastic mean free path (IMFP) estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS is consistent with the IMFP values determined by the Tanuma-Powell Penn (TPP2M) formula [2]. Our results showed that the IMFP of NiO thin films was increased with increasing primary energies. The quantitative analysis of REELS provides us with a straightforward way to determine the electronic and optical properties of transparent thin film materials.

• The Journal of the Korea institute of electronic communication sciences
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• v.11 no.9
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• pp.841-848
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• 2016

In this paper, a microstrip-fed dual-band monopole antenna with DGS(: Defected Ground System) for WLAN(: Wireless Local Area Networks) applications was designed, fabricated and measured. The proposed antenna is based on a microstrip-fed structure, and composed of two strip lines and DGS structure and then designed in order to get dual band characteristics. We used the simulator, Ansoft's High Frequency Structure Simulator(: HFSS) and carried out simulation about parameters W2, L10, W3, and DGS to get the optimized parameters. The proposed antenna is made of $21.0{\times}36.0{\times}1.6mm3$ and is fabricated on the permittivity 4.4 FR-4 substrate. The experiment results are shown that the proposed antenna obtained the -10 dB impedance bandwidth 700 MHz(2.10~2.80 GHz) and 1,780 MHz(5.02~6.80 GHz) covering the WLAN bands. Also, the measured gain and radiation patterns characteristics of the proposed antenna are presented at required dual-band(2.4GHz band/5.0GHz band), respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.8
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• pp.940-945
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• 2008

In this paper, we have designed the Brick Transmit/Receive Module for K-band which can be applied to active phase array radar system. The proposed structure of T/R Module for K band is brick type for MCM(Multi Chip Module) form and the satisfaction of tile type T/R Module can apply to structure of cavity and main characteristic. The fabricated brick type T/R Module confirmed the main characteristic for electrical goal performance in test and this structure can be applied to active phase array radar.

• International Journal of Internet, Broadcasting and Communication
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• v.12 no.1
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• pp.37-44
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• 2020

In this paper, we proposed a compact printed monopole antenna with an inverted L-shaped slot for dual-band operations. Two operating frequency bands are achieved with the use of an inverted L-shaped slot etched on the radiating strip for bandwidth enhancement and a defected ground structure for return loss improvement in the higher frequency band. The measured results showthat the proposed antenna has impedance bandwidths (S₁₁< -10 dB) of 270 MHz (1.81-2.08 GHz) and 340 MHz (2.36-2.70 GHz), covering the required bandwidths for PCS (1850.5-1989.5 MHz), CDMA 2000 (1850-1990 MHz), TD-SCDMA (1880-2025 MHz) and 2.4 GHz WLAN (2400-2484 MHz). The measured return loss of the proposed antenna has a good value of approximately 27.2 dB at 2.4 GHz WLAN. The antenna's peak gains also have a high value of 1.92 dBi at 2 GHz and 2.12 dBi at 2.45 GHz. The proposed antenna shows omnidirectional radiation patterns over the entire frequency range of interest.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.8
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• pp.68-73
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• 2010

In this paper, a compact Ultra-Wideband band-pass filter with notched band at 5.8GHz by using LC resonator is proposed. The structure of the proposed band-pass filter is very simple, and the DGS(Defected Ground Structure) is used to get the low-pass filter characteristics and the LC resonator is used to get the notched filter. The proposed band-pass filter can be much smaller than a cascaded filter type. The LC resonator is designed with a radial stub and small stub. As a result of measurement, the insertion loss is less than 0.5dB throughout the pass-band of 2.21GHz~10.92GHz, the return loss is more than 16dB and the maximum variation of group delay is 0.29ns and a notched band is 5.2GHz~6.2GHz.

• Proceeding of EDISON Challenge
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• 2014.03a
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• pp.412-414
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• 2014

In this study, we investigate atomic and electronic structure of graphene with substitutional impurities such as boron or nitrogen atom using density functional theory (DFT) calculations. To investigate the effects of substitutional impurities in graphene, we consider a ($6{\times}6$) supercell of graphene in our calculations. For detailed electronic properties of graphene, we compare the energy band structure of B- or N-doped graphene with that of pristine graphene.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.2
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• pp.218-223
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• 2010

In this paper, a novel CPW(Coplanar Waveguide)-fed UWB(Ultra Wide Band) antenna is designed, implemented, and measured for UWB communications. CPW-fed planar antenna has advantages of wide-bandwidth, low-cost and easy interaction with radio frequency front end circuitry. We have used HFSS(High Frequency Structure Simulator) of Ansoft which is based on the FEM(Finite Element Method) to simulate the proposed antenna. FR-4 substrate of thickness 1.6 mm and relative permitivity 4.4 is used for implementation. The proposed antenna showed VSWR(Voltage Standarding Wave Ratio)${\leq}2$ for the frequency band from 3.1 GHz to 10.6 GHz which is used for ultra wide band communication. Measured peak gains are 2.61, 4.95, 2.89, 7.35 dBi at 3, 6, 8, 11 GHz, respectively.

• Journal of electromagnetic engineering and science
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• v.5 no.4
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• pp.208-212
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• 2005

In this paper, we introduced a band-pass filter employed the PBG structure and the aperture on the ground together. The harmonics of band pass filter have been suppressed by employing the PBG structure and the bandwidth of it has been broadened by using the aperture on the ground. The designed PBG cells have three different sizes. The largest cells, the middle cells, and the smallest cells have suppressed the multiple of second harmonics, the multiple of third harmonics, and the multiple of fifth harmonics, respectively. The center frequency has been 2.18 GHz. The bandwidth has been increased from 230 MHz up to 310 MHz(80 MHz, about $35\%$) by the aperture and the ripple characteristics in passband have been improved and the harmonic frequencies have been suppressed about 30 dB by the PBG.

• Advances in nano research
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• v.7 no.3
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• pp.209-221
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• 2019

Graphene, with impressive electronic properties, have high potential in the microelectronic field. However, graphene itself is a zero bandgap material which is not suitable for digital logic gates and its application. Thus, much focus is on graphene nanoribbons (GNRs) that are narrow strips of graphene. During GNRs fabrication process, the occurrence of defects that ultimately change electronic properties of graphene is difficult to avoid. The modelling of GNRs with defects is crucial to study the non-idealities effects. In this work, nearest-neighbor tight-binding (TB) model for GNRs is presented with three main simplifying assumptions. They are utilization of basis function, Hamiltonian operator discretization and plane wave approximation. Two major edges of GNRs, armchair-edged GNRs (AGNRs) and zigzag-edged GNRs (ZGNRs) are explored. With single vacancy (SV) defects, the components within the Hamiltonian operator are transformed due to the disappearance of tight-binding energies around the missing carbon atoms in GNRs. The size of the lattices namely width and length are varied and studied. Non-equilibrium Green's function (NEGF) formalism is employed to obtain the electronics structure namely band structure and density of states (DOS) and all simulation is implemented in MATLAB. The band structure and DOS plot are then compared between pristine and defected GNRs under varying length and width of GNRs. It is revealed that there are clear distinctions between band structure, numerical DOS and Green's function DOS of pristine and defective GNRs.