• 한국전기전자재료학회논문지
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• 제18권7호
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• pp.656-661
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• 2005

The effects of gas atmosphere and in-situ thermal annealing in buffet layers on the characteristic of the ZnO grown by RF magnetron sputtering have been investigated. It was shown that the introduction of buffer layers grown at the gas atmospheres of the mixed $Ar/O_2$ and the in-situ thermal treatment of the ZnO buffer layer improved the structural and optical properties. In addition, the ZnO films on the buffer layer thermal-annealed at $N_2$ gas ambience showed the strong emission of the near band gap exciton with narrow linewidth by combining the high-temperature growth of the ZnO film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.59-62
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• 1998

Thermal treatment dependences of MFS devices in $BaMgF_4$ on Si structures have been investigated. $BaMgF_4$ thin films have been directly deposited on the p-Si(100) wafers at a low temperature of $300^{\circ}$ in an ultra high vacuum(UHV) system. After in-situ post-deposition annealing was conducted for 20 s at $650^{\circ}$, bias and temperature were applied to $BaMgF_4/Si$ structures. Although X-ray diffraction analysis showed that the films were polycrystalline in nature before and after bias temperature, the C-V properties were some different between with and without bias-temperature treatment.

• 소성∙가공
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• 제29권1호
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• pp.44-48
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• 2020

Aluminum nitride (AlN), as a substrate material in electronic packaging, has attracted considerable attention over the last few decades because of its excellent properties, which include high thermal conductivity, a coefficient of thermal expansion that matches well with that of silicon, and a moderately low dielectric constant. AlN films with c-axis orientation and thermal conductivity characteristics were deposited by using Pulsed Laser Deposition (PLD). The epitaxial AlN films were grown on sapphire (c-Al₂O₃) single crystals by PLD with AlN target and Y₂O₃ doped AlN target. A comparison of different targets associated with AlN films deposited by PLD was presented with particular emphasis on thermal conductivity properties. The quality of AlN films was found to strongly depend on the growth temperature that was exerted during deposition. AlN thin films deposited using Y₂O₃-AlN targets doped with sintering additives showed relatively higher thermal conductivity than while using pure AlN targets. AlN thin films deposited at 600℃ were confirmed to have highly c-axis orientation and thermal conductivity of 39.413 W/mK.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.829-834
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• 2016

Coil specimens were prepared by continuous coating on a copper wire with flexible PAI (polyamideimide) and PAI/nanosilica (5 wt%) varnish and thermally aged at 150, 200 and $250^{\circ}C$ for 5, 10 and 15 days, respectively. AC insulation breakdown voltage was investigated under inverter surge condition at 60 Hz and 1,000 Hz and insulation breakdown voltage decreased with increasing aging temperature and aging time at each 60 and 1,000 Hz.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.251-251
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• 2009

The generation of energy and the cooling of system using thermoelectric semiconductor material have been in spotlight. Thermoelectric effect increases with the decrease of the thermal conductivity. In the thermoelectric devices, thermal conductivity is related to phonon scattering. Therefore, few studies have been conducted in the thermoelectric materials dispersed nano oxide particle for increasing the phonon scattering. However, core-shell structure which nano particle disperses in solvents and then which thermoelectric materials coated on the nano oxide particles has not been reported. In this study, we selected commercial nano powder such as $Al_2O_3$. This nano particle was about 20nm and was crushed aggregate by mechanical treatment. We have developed the effect of the dispersant and the solvent. The properties of particles were evaluated by SEM, TEM, particle size analysis, and BET. Dispersion and dispersion stability were evaluated by electronic microscope and turbidity.

• 한국주조공학회지
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• 제23권4호
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• pp.195-203
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• 2003

Hyper-eutectic Al-Si alloy is used much to automatic parts and material for the electronic parts because of the low coefficient of thermal expansion, superior thermal stability and superior wear resistance. In this work, A390 alloy specimens were fabricated for control of the Si particle size by various processes, such as spray-casting, permanent mold-casting and squeeze-casting. To minimize the effect of microporosity of the specimens, hot extrusion was carried out under equal condition. Each specimens were evaluated tensile properties at room temperature and thermal expansion properties in the range from room temperature to 400$^{\circ}C$. Ultimate tensile strength and elongation of the spray-cast and extruded specimens which have fine and well distributed Si particles were improved greatly compare to the permanent mold-cast and extruded ones. Specimens which have finer Si particles showed higher ultimate tensile strength and elongation than those having large Si particle size, and coefficient of thermal expansion of the specimens increased linearly with Si particle size. In case of the repeated high temperature exposures, thermal expansion properties of the spray-cast and extruded specimens were found to be more stable than those of the others due to the effect of fine and well distributed Si particles.

• 한국전기전자재료학회논문지
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• 제23권8호
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• pp.651-654
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• 2010

This paper describes the thermal and mechanical properties of doped thin film 3C-SiC and porous 3C-SiC. In this work, the in-situ doped thin film 3C-SiC was deposited by using atmospheric pressure chemical vapor deposition (APCVD) method at $120^{\circ}C$ using single-precursor hexamethyildisilane: $Si_2(CH_3)_6$ (HMDS) as Si and C precursors. 0~40 sccm $N_2$ gas was used as doping source. After growing of doped thin film 3C-SiC, porous structure was achieved by anodization process with 380 nm UV-LED. Anodization time and current density were fixed at 60 sec and 7.1 mA/$cm^2$, respectively. The thermal and mechanical properties of the $N_2$ doped porous 3C-SiC was measured by temperature coefficient of resistance (TCR) and nano-indentation, respectively. In the case of 0 sccm, the variations of TCR of thin film and porous 3C-SiC are similar, but TCR conversely changed with increase of $N_2$ flow rate. Maximum young's modulus and hardness of porous 3C-SiC films were measured to be 276 GPa and 32 Gpa at 0 sccm $N_2$, respectively.

• 전기학회논문지
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• 제57권12호
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• pp.2238-2243
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• 2008

The use of arc tubes made of ceramic material further enhanced some of the metal halide lamp's properties. These properties translate into higher efficacy with better color rendering, stable color through lamp long life. Recently, due to an increase in the application of the ceramic metal-halide lamp, the study for the property etc. according to Ballast's driving scheme and the study for arc tube material, optimization of gas and so on are being proceeded to improve the property of the lamp. Especially, to control ceramic metal-halide lamp, the vigorous study and practical use with respect to Electronic Ballast, which has been improved in the disadvantages of the conventional Magnetic Ballast are made. In this paper, Electrical, optical and thermal characteristics are analyzed by comparing magnetic ballast with electronic ballast.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.151-152
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• 2006

Bi-Te thermoelectric powder was fabricated by mechanical alloying method for 1 to 10 hours under vacuum in planetary mill. We investigated the properties of mechanically alloyed Bi-Te powder by thermal analysis, X-ray diffractometer and FESEM with EDS Bi-Te raw material was formed to $Bi_2Te_3$ phase at condition over 3.5 hours of mechanical alloying time.

• 한국전기전자재료학회논문지
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• 제19권8호
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• pp.785-789
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• 2006

BiSrCaCuO(2223) superconductor was fabricated by the thermal pyrolysis method. The superconducting precursor produced by the dehydration of the gel at $120^{\circ}C$ for 12 h is not in the amorphous state as expected but in a crystalline state. In this paper, the establishment of fabrication condition was examined so as to improve the related properties to the practical use of BiSrCaCuO superconductor, and we reported the production of the BiSrCaCuO by the pyrolysis method.