• Title/Summary/Keyword: Electronic Short Circuit Tester

Search Result 2, Processing Time 0.018 seconds

Development of Smart ICT-Type Electronic External Short Circuit Tester for Secondary Batteries for Electric Vehicles (전기자동차용 2차전지를 위한 스마트 ICT형 전자식 외부 단락시험기 개발)

  • Jung, Tae-Uk;Shin, Byung-Chul
    • Journal of the Korean Society of Industry Convergence
    • /
    • v.25 no.3
    • /
    • pp.333-340
    • /
    • 2022
  • Recently, the use of large-capacity secondary batteries for electric vehicles is rapidly increasing, and accordingly, the demand for technologies and equipment for battery reliability evaluation is increasing significantly. The existing short circuit test equipment for evaluating the stability of the existing secondary battery consists of relays, MCs, and switches, so when a large current is energized during a short circuit, contact fusion failures occur frequently, resulting in high equipment maintenance and repair costs. There was a disadvantage that repeated testing was impossible. In this paper, we developed an electronic short circuit test device that realizes stable switching operation when a large-capacity power semiconductor switch is energized with a large current, and applied smart ICT technology to this electronic short circuit stability test system to achieve high speed and high precision through communication with the master. It is expected that the inspection history management system based on data measurement, database format and user interface will be utilized as essential inspection process equipment.

SiC MOSFET Compared to Si Power Devices during Short Circuit Test (실리콘 카바이드와 실리콘 MOSFET의 단락회로 특성비교)

  • Nguyen, Thanh That;Ashraf, Ahmed;Park, Joung Hu
    • Proceedings of the KIPE Conference
    • /
    • 2013.11a
    • /
    • pp.89-90
    • /
    • 2013
  • Higher power density, higher operational temperature, lower on state resistance and higher switching frequency capabilities of Silicon Carbide (SiC) technology devices compared to Silicon (Si) devices makes it has higher promising market. One of the most developed SiC devices is the power MOSFET. This study tests the SiC MOSFET under short circuit conditions taking into account the effect of gate voltage characteristics. The results will be compared to IGBT and MOSFET Si devices with similar ratings. A tester circuit was designed to perform the short circuit operation.

  • PDF