• Journal of Korea Society of Industrial Information Systems
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• v.14 no.1
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• pp.1-8
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• 2009

The objective of this study is to design a system that automatically monitors the state of interior spaces like offices where lots of people are coming and going through image data and environment data, which includes temperature, humidity, and other conditions, and implement and test related application programs. In practice, there are lots of image data automatically obtained by unmanned equipments, such as certain types of CCTVs, for monitoring situation in usual interior spaces. This image data can be used as a more effective manner by establishing a system that recognizes situation in specific interior spaces based on the relationship between image and environment data. For instance, it is possible to perform unmanned on/off controls for various electronic equipments, such as air conditioners, lights, and other devices, through analyzing the data acquisited from environment sensors (temperature, humidity, and illumination) as dynamic states are not maintained for a specified period of time. For implementing these controls, this study analyzes environment data acquisited from temperature and humidity sensors and image data input from wireless cameras to recognize situation and that can be used to automatically control environment variables configured by users. Experiments were applied in a laboratory where unmanned controls were effectively performed as automatic on/off controls for the air conditioner and lights installed in the laboratory as certain motions were detected or undetected for a specified period of time.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.75-87
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• 1996

This review is presented under the following headings: 1.Introduction 1.1 Brief review of the properties of AlN 1.2 Historical survey of work on ceramic and single crystal AlN 2.Thermochemical background 3.Crystal growth 4.Doping 5.Potential applications and future work The known properties of AlN which make it of interest for various are discussed briefly. The properties include chemical stability, crystal structure and lattice constants, refractive indices and other optical properties, dielectric constant, surface acoustic wave velocity and thermal conductivity. The history of work in single crystals, thin films and ceramics are outlined and the thermochemistry of AlN reviewed together with some of the relevant properties of aluminium and nitrogen; the problems encountered in growing crystals of AlN are shown to arise directly from these thermochemical relationships. Methods have been reported in the literature for growing AlN crystals from melts, solution and vapour and these methods are compared critically. It is proposed that the only practicable approach to the growth of AlN is by vapour phase methods. All vapour based procedures share the share the same problems: $.$the difficulty of preventing contamination by oxygen & carbon $.$the high bond energy of molecular nitrogen $.$the refractory nature of AlN (melting point~3073K at 100ats.) $.$the high reactivity of Al at high temperatures It is shown that the growth of epitactic layers and polycrystalline layers present additional problems: $.$chemical incompatibility of substrates $.$crystallographic mismatch of substrates $.$thermal mismatch of substrates The result of all these problems is that there is no good substrate material for the growth of AlN layers. Organometallic precursors which contain an Al-N bond have been used recently to deposit AlN layers but organometallic precursors gave the disadvantage of giving significant carbon contamination. Organometallic precursors which contain an Al-N bound have been used recently to deposit AlN layers but organometallic precursors have the disadvantage of giving significant carbon contamination. It is conclude that progress in the application of AlN to optical and electronic devices will be made only if considerable effort is devoted to the growth of larges, pure (and particularly, oxygen-free) crystals. Progress in applications of epi-layers and ceramic AlN would almost certainly be assisted also by the availability of more reliable data on the pure material. The essential features of any stategy for the growth of AlN from the vapour are outlined and discussed.

• Resources Recycling
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• v.31 no.6
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• pp.81-91
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• 2022

The use of lithium-ion batteries increases significantly with the rapid spread of electronic devices and electric vehicle and thereby an increase in the amount of waste batteries is expected in the near future. Therefore, studies are continuously being conducted to recover various resources of cathode active material (Ni, Co, Mn, Li) from waste battery. In order to recover the cathode active material, black mass is generally recovered from waste battery. The general process of recovering black mass is a waste battery collection - discharge - dismantling - crushing - classification process. This study focus on the crushing/classification process among the processes. Specifically, the particle size distribution of various samples at each crushing/classification step were evaluated, and the particle shape of each particle fraction was analyzed with a microscope and SEM (Scanning Electron Microscopy)-EDS(Energy Dispersive Spectrometer). As a result, among the black mass particle, fine particle less than 74 ㎛ was the mixture of cathode and anode active material which are properly liberated from the current metals. However, coarse particle larger than 100 ㎛ was present in a form in which the current metal and active material were combined. In addition, this study developed a PBM(Population Balance Model) system that can simulate two-species mixture sample with two different crushing properties. Using developed model, the breakage parameters of two species was derived and predictive performance of breakage distribution was verified.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.5
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• pp.315-324
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• 2023

In this paper, we propose a real-time pose estimation method for a monocular camera using a particle filter integrated with UKF (unscented Kalman filter). While conventional camera tracking techniques combine camera images with data from additional devices such as gyroscopes and accelerometers, the proposed method aims to use only two-dimensional visual information from the camera without additional sensors. This leads to a significant simplification in the hardware configuration. The proposed approach is based on a particle filter integrated with UKF. The pose of the camera is estimated using UKF, which is defined individually for each particle. Statistics regarding the camera state are derived from all particles of the particle filter, from which the real-time camera pose information is computed. The proposed method demonstrates robust tracking, even in the case of rapid camera shakes and severe scene occlusions. The experiments show that our method remains robust even when most of the feature points in the image are obscured. In addition, we verify that when the number of particles is 35, the processing time per frame is approximately 25ms, which confirms that there are no issues with real-time processing.

• Composites Research
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• v.36 no.5
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• pp.349-354
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• 2023

Poly(3-hexylthiophene) (P3HT) is a conjugated polymer that is highly soluble in organic solvents and is readily available. However, its electrical properties as an active channel in electronic devices are not enough for practical applications, necessitating further improvement in the properties. In this study, we demonstrate that the blending of two P3HT polymers (i.e., regio-regular (RR) P3HT and regio-random (RRa) P3HT) with different regioregularities can significantly improve charge transport characteristics of the blend films. The morphological and electrical properties of the blend films were systematically investigated by varying the ratio between two P3HT polymers. Atomic force microscopy (AFM), X-ray diffraction (XRD), and UV-visible absorption spectroscopy (UV-vis) were employed to evaluate the morphological and optoelectronic properties of the blend films. The crystallinity of the blend films increased with increasing the content of RRa-P3HT to 20 wt% and gradually decreased as the content increased to 80%. Consistently, the highest charge carrier mobility was obtained from the blend films containing 20 wt% RRa-P3HT, which value was measured to be 0.029 cm²/V·s. The values gradually decreased to 0.0007 cm²/V·s with increasing the content of RRa-P3HT to 80 wt%.

• Journal of Adhesion and Interface
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• v.24 no.3
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• pp.100-104
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• 2023

Van der Waals heterostructures have garnered significant attention in recent research due to their excellent electronic characteristics arising from the absence of dangling bonds and the exclusive reliance on Van der Waals forces for interlayer coupling. However, most studies have been confined to fundamental research employing the Scotch tape (mechanical exfoliation) method. We fabricated Van der Waals vertical heterojunction transistors to advance this field using materials exclusively grown via chemical vapor deposition (CVD). CVDgrown graphene was patterned through photolithography to serve as electrodes, while CVD-grown MoSe₂ was employed as the pickup/transfer material, resulting in the realization of Van der Waals heterojunction transistors with interlayer charge transfer effects. The electrical characteristics of the fabricated devices were thoroughly examined. Additionally, we observed variations in the transistor's performance based on the presence of defects in MoSe₂ layer.

• Korean Security Journal
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• no.41
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• pp.37-66
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• 2014

In recent years, with the development of computers and electronics, electronics and communication technology in a growing and each part is dependent on the cross-referencing makes all electronic equipment is obsolete due to direct or indirect damage EMP. Korea and the impending standoff North Korea has a considerable level of technologies related to the EMP, EMP weapons you already have or in a few years, the development of EMP weapons will complete. North Korea launched a long-range missile and conducted a nuclear test on several occasions immediately after, when I saw the high-altitude nuclear blackmail has been strengthening the outright offensive nuclear EMP attacks at any time and practical significance for the EMP will need offensive skills would improve. At this point you can predict the damage situation of Korea's security reality that satisfy the need, more than anything else to build a protective system of the EMP. The scale of the damage that unforeseen but significant military damage and socio-economic damage and fatalities when I looked into the situation which started out as a satellite communications systems and equipment to attack military and security systems and transportation, finance, national emergency system, such as the damage elsewhere. In General, there is no direct casualties reported, but EMP medical devices that rely on lethal damage to people who can show up. In addition, the State power system failure due to a power supply interruption would not have thought the damage would bring State highly dependent on domestic power generation of nuclear plants is a serious nuclear power plant accident in the event of a blackout phenomenon can lead to the plant's internal problems should see a forecast. First of all, a special expert Committee of the EMP, the demand for protective facilities and equipment and conduct an investigation, he takes fits into your budget is under strict criteria by configuring the contractors should be sifting through. He then created the Agency for verification of performance EMP protection after you have verified the performance of maintenance, maintenance, safety and security management, design and construction company organized and systematic process Guard facilities or secret communications equipment and perfect for the EMP, such as protective equipment maneuver system should take.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.143-148
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• 2001

PbWO$_4$ can be densified at 85$0^{\circ}C$ and it shows fairy good microwave dielectric properties; dielectric constant($\varepsilon$$_{r}$) of 21.5, quality factor(Q $\times$f$_{0}$) of 37,224 GHz, and temperature coefficient of resonant frequency($\tau$/suf f/) of -31ppm/$^{\circ}C$. Due to its low sintering temperature, PbWO$_4$ can be used as a multilayered chip component at microwave frequency with high electrical performance by using high conductive electrode metals such as Ag and Cu. However, in order to use this material for microwave communication devices, the $\tau$$_{f}$ of PbWO$_4$ must be stabilized to near zero with high Q$\times$f$_{0}$. In present study, PbWO$_4$ was modified by adding TiO$_2$, B$_2$O$_3$, and CuO in order to improve the microwave dielectric properties without increasing the sintering temperature. The addition of TiO$_2$ increased the $\tau$$_{f}$ and $\varepsilon$$_{r}$, due to its high rr(200ppm/$^{\circ}C$) and $\varepsilon$$_{r}$(100). However, the addition of TiO$_2$ reduced the Q$\times$f$_{0}$ value. When the mot ratio of PbWO$_4$ and TiO$_2$ was 0.913:7.087, near zero $\tau$$_{f}$(0.2ppm/$^{\circ}C$) was obtaibed with $\varepsilon$$_{r}$=22.3, and Q$\times$f/$_{0}$=21,443GHz. With this composition, various amount of B$_2$O$_3$ and CuO were added in order to improve the quality factor. The addition, of B$_2$O$_3$ decreased the $\varepsilon$$_{r}$. However, increased Q$\times$f$_{0}$ and $\tau$$_{f}$. When 2.5 wt% of B$_2$O$_3$ was added to the 0.913PbWO$_4$-0.087TiO$_2$ ceramic, $\tau$$_{f}$ =8.2, $\varepsilon$$_{r}$=20.3, Q$\times$f$_{0}$=54784 GHz. When CuO added to the 0.913PbWO$_4$-0.087TiO$_2$ ceramic, $\tau$$_{f}$ was continuously decreased. And $\varepsilon$$_{r}$ . and Q$\times$f$_{0}$ were increased up to 1.0 wt% then decreased. At 0.1 wt% of CuO addition, the 0.913PbWO$_4$-7.087Ti0$_2$ Ceramic Showed $\varepsilon$$_{r}$=23.5, $\tau$$_{f}$=4.4ppm/$^{\circ}C$, and Q$\times$f$_{0}$=32,932 GHz.> 0/=32,932 GHz.X>=32,932 GHz.> 0/=32,932 GHz.

• Management & Information Systems Review
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• v.36 no.4
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• pp.33-51
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• 2017

With the advent of 'The Forth Industrial Revolution' and the growing demand for quality of life due to economic growth, needs for the quality of medical services are increasing. Artificial intelligence has been introduced in the medical field, but it is rarely used in chronic skin diseases that directly affect the quality of life. Also, atopic dermatitis, a representative disease among chronic skin diseases, has a disadvantage in that it is difficult to make an objective diagnosis of the severity of lesions. The aim of this study is to establish an intelligent severity recognition model of atopic dermatitis for improving the quality of patient's life. For this, the following steps were performed. First, image data of patients with atopic dermatitis were collected from the Catholic University of Korea Seoul Saint Mary's Hospital. Refinement and labeling were performed on the collected image data to obtain training and verification data that suitable for the objective intelligent atopic dermatitis severity recognition model. Second, learning and verification of various CNN algorithms are performed to select an image recognition algorithm that suitable for the objective intelligent atopic dermatitis severity recognition model. Experimental results showed that 'ResNet V1 101' and 'ResNet V2 50' were measured the highest performance with Erythema and Excoriation over 90% accuracy, and 'VGG-NET' was measured 89% accuracy lower than the two lesions due to lack of training data. The proposed methodology demonstrates that the image recognition algorithm has high performance not only in the field of object recognition but also in the medical field requiring expert knowledge. In addition, this study is expected to be highly applicable in the field of atopic dermatitis due to it uses image data of actual atopic dermatitis patients.

• Electrical & Electronic Materials
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• v.12 no.7
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• pp.7-11
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• 1999

Fully sealed field emission display in size of 4.5 inch has been fabricated using single-wall carbon nanotubes-organic vehicle com-posite. The fabricated display were fully scalable at low temperature below 415$^{\circ}C$ and CNTs were vertically aligned using paste squeeze and surface rubbing techniques. The turn-on fields of 1V/${\mu}{\textrm}{m}$ and field emis-sion current of 1.5mA at 3V/${\mu}{\textrm}{m}$ (J=90${\mu}{\textrm}{m}$/$\textrm{cm}^2$)were observed. Brightness of 1800cd/$m^2$ at 3.7V/${\mu}{\textrm}{m}$ was observed on the entire area of 4.5-inch panel from the green phosphor-ITO glass. The fluctuation of the current was found to be about 7% over a 4.5-inch cath-ode area. This reliable result enables us to produce large area full-color flat panel dis-play in the near future. Carbon nanotubes (CNTs) have attracted much attention because of their unique elec-trical properties and their potential applica-tions [1, 2]. Large aspect ratio of CNTs together with high chemical stability. ther-mal conductivity, and high mechanical strength are advantageous for applications to the field emitter [3]. Several results have been reported on the field emissions from multi-walled nanotubes (MWNTs) and single-walled nanotubes (SWNTs) grown from arc discharge [4, 5]. De Heer et al. have reported the field emission from nan-otubes aligned by the suspension-filtering method. This approach is too difficult to be fully adopted in integration process. Recently, there have been efforts to make applications to field emission devices using nanotubes. Saito et al. demonstrated a car-bon nanotube-based lamp, which was oper-ated at high voltage (10KV) [8]. Aproto-type diode structure was tested by the size of 100mm $\times$ 10mm in vacuum chamber [9]. the difficulties arise from the arrangement of vertically aligned nanotubes after the growth. Recently vertically aligned carbon nanotubes have been synthesized using plasma-enhanced chemical vapor deposition(CVD) [6, 7]. Yet, control of a large area synthesis is still not easily accessible with such approaches. Here we report integra-tion processes of fully sealed 4.5-inch CNT-field emission displays (FEDs). Low turn-on voltage with high brightness, and stabili-ty clearly demonstrate the potential applica-bility of carbon nanotubes to full color dis-plays in near future. For flat panel display in a large area, car-bon nanotubes-based field emitters were fabricated by using nanotubes-organic vehi-cles. The purified SWNTs, which were syn-thesized by dc arc discharge, were dispersed in iso propyl alcohol, and then mixed with on organic binder. The paste of well-dis-persed carbon nanotubes was squeezed onto the metal-patterned sodalime glass throuhg the metal mesh of 20${\mu}{\textrm}{m}$ in size and subse-quently heat-treated in order to remove the organic binder. The insulating spacers in thickness of 200${\mu}{\textrm}{m}$ are inserted between the lower and upper glasses. The Y\ulcornerO\ulcornerS:Eu, ZnS:Cu, Al, and ZnS:Ag, Cl, phosphors are electrically deposited on the upper glass for red, green, and blue colors, respectively. The typical sizes of each phosphor are 2~3 micron. The assembled structure was sealed in an atmosphere of highly purified Ar gas by means of a glass frit. The display plate was evacuated down to the pressure level of 1$\times$10\ulcorner Torr. Three non-evaporable getters of Ti-Zr-V-Fe were activated during the final heat-exhausting procedure. Finally, the active area of 4.5-inch panel with fully sealed carbon nanotubes was pro-duced. Emission currents were character-ized by the DC-mode and pulse-modulating mode at the voltage up to 800 volts. The brightness of field emission was measured by the Luminance calorimeter (BM-7, Topcon).