• 한방안이비인후피부과학회지
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• 제30권3호
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• pp.62-75
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• 2017

Objectives : The aim of this study is to evaluate possibility of DITI as prognosis evaluation tool of facial palsy. Methods : We investigate prognosis of facial palsy through EMR(Electronic Medical Record) of inpatient from December 2016 to June 2017. We evaluated the sex, age distribution, length of hospital stay, paralysis site, number of treatment after discharge, change of H-B Grade at entrance and exit, temperature difference of both sides of DITI, and Nerve Conduction Study(NCS) with reference to EMR recorded symptom change. Results : 1. Significant correlations were not found between DITI and House-Brackmann Grade change, NCS(%), the date of admission. 2. There was a negative correlation between NCS(%) and hospitalization period in patients with facial palsy. The higher the NCS, the faster the recovery rate of facial palsy. 3. In patients with facial palsy, the temperature difference between the two sides after the DITI image shows that the affected side tends to be lower than the normal side. Conclusions : In this study, only DITI temperature difference between both sides of face is not significant in determining the prognosis of facial palsy. Further research is needed to conduct DITI at the same time and to improve accuracy through a sufficient assessment of the degree of facial palsy.

• 한국세라믹학회지
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• 제52권5호
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• pp.299-303
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• 2015

The electrolyte is an important component in determining the performance of Fuel Cells. Especially, investigation of the conduction properties of electrolytes plays a key role in determining the performance of the electrolyte. The electrochemical properties of Yttrium stabilized zirconia (YSZ) were measured to allow the use of this material as an electrolyte for solid oxide fuel cells (SOFC) in the temperature range of $700-1000^{\circ}C$ and in $0.21{\leq}pO_2/atm{\leq}10^{-23}$. A Hebb-Wagner polarization experimental cell was optimally manufactured; here we discuss typical problems associated with making cells. The partial conductivities due to electrons and holes for 8YSZ, which is known as a superior oxygen conductor, were obtained using I-V characteristics based on the Hebb-Wagner polarization method. Activation energies for holes and electrons are $3.99{\pm}0.17eV$ and $1.70{\pm}0.06eV$ respectively. Further, we calculated the oxygen ion conductivity with electron, hole, and total conductivity, which was obtained by DC four probe conductivity measurements. The oxygen ion conductivity was dependent on the temperature; the activation energy was $0.80{\pm}0.10eV$. The electrolyte domain was determined from the top limit, bottom limit, and boundary (p=n) of the oxygen partial pressure. As a result, the electrolyte domain was widely presented in an extensive range of oxygen partial pressures and temperatures.

• 한국세라믹학회지
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• 제45권4호
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• pp.220-225
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• 2008

Lead-free ferroelectric ceramics are widely researched today for industrial applications as sensors, actuators and transducers. Since $Pb(Zr_aTi_{1-a})O_3$-(PZT) has high Curie temperature($T_C$), high piezoelectric properties near its morphotropic phase boundary(MPB) composition and small temperature dependence electrical behavior, it has been used to commercial materials for wide temperature range and different application fields. According to the tolerance factor concept, since the $Bi^{3+}$ cation with 12-fold coordinate has a smaller ionic radius than 12-fold coordinate $Pb^{2+}$, most bismuth based perovskites possess a smaller tolerance factor. Therefore, MPBs with a higher $T_C$ may be expected in $Bi(Me^{3+})O_3PbTiO_3$ solid solutions. As in lead based perovskite systems, it is clear that we need to explore more materials in simple or complex bismuth based MPB systems. The objective of this study is to investigate the $Bi(Ni_{1_a}X_a)O_3-PbTiO_3(X=Ti^{4+},\;Nb^{5+})$ perovskite solid-solution. For improving the electronic conduction problem, the magnesium and manganese modified system was also studied.

• 한국정보통신학회논문지
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• 제18권3호
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• pp.657-662
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• 2014

본 연구에서는 비대칭 이중게이트(double gate; DG) MOSFET의 상 하단 게이트전압에 대한 문턱전압이하 스윙을 분석하였다. 비대칭 DGMOSFET는 4단자소자로서 상단과 하단의 게이트단자에 별도의 전압을 인가할 수 있는 구조이다. 그러므로 문턱전압이하 영역에서 전송특성을 분석하기 위해선 상단게이트전압에 대한 문턱전압이하 스윙뿐만이 아니라 하단게이트전압에 대한 문턱전압이하 스윙의 변화도 분석하여야 한다. 이를 위하여 가우시안 분포함수를 이용한 포아송방정식의 해석학적 전위분포를 구하여 문턱전압이하 스윙에 대한 해석학적 모델을 제시하였다. 이 문턱전압이하 모델을 이용하여 문턱전압이하 스윙을 상 하단 게이트 전압에 따라 관찰한 결과, 문턱전압이 하 스윙은 게이트전압에 따라 크게 변화하는 것을 알 수 있었다. 특히 상 하단 게이트 전압에 따라 전도중심이 변화하며 이로 인하여 문턱전압이하 스윙에 영향을 미치고 있다는 것을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.16-17
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• 2010

Molecular spintronics has attracted attentions, which combines molecular electronics with the spin degree of freedom in electron transport. Among various molecules as candidates of the molecular spintronics, single molecule magnet (SMM) is one of the most promising material. SMM molecules show a ferromagnetic behavior even as a single molecule and hold the spin information even after the magnetic field is turned off. Here in this report, we show the spin behavior of SMM molecules adsorbed on the Au surface by combining the observation of Kondo peak in the STS and ESR-STM measurement. Kondo resonance state is formed near the Fermi level when degenerated spin state interacts with conduction electrons. ESR-STM detects the Larmor frequency of the spin in the presence of a magnet field. The sample include $MPc_2$ and $M_2Pc_3$ molecules ($M\;=\;Tb^{3+}$, $Dy^{3+}$, and $Y^{3+}$ Pc=phthalocyanine) whose critical temperature as a ferromagnet reaches 40 K. A clear Kondo peak was observed which is originated from an unpaired electron in the ligand of the molecule, which is the first demonstration of the Kondo peak originated from electron observed in the STS measurement. We also observed corresponding peaks in ESR-STM spectra. [1] In addition we found that the Kondo peak intensity shows a clear variation with the conformational change of the molecule; namely the azimuthal rotational angle of the Pc planes. This indicates that the Kondo resonance is correlated with the molecule electronic state. We examined this phenomena by using STM manipulation technique, where pulse bias application can rotate the relative azimuthal angle of the Pc planes. The result indicates that an application of ~1V pulse to the bias voltage can rotate the Pc plane and the Kondo peaks shows a clear variation in intensity by the molecule's conformational change.

• Journal of Electrochemical Science and Technology
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• 제13권3호
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• pp.362-368
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• 2022

The application of polymer composite electrolyte in all-solid-state lithium-sulfur battery (ASSLSBs) can guarantee high energy density and improve the interface contact between electrolyte and electrode, which has a broader application prospect. However, the inherent insulation of the sulfur-cathode leads to a low electron/ion transfer rate. Carbon materials with high electronic conductivity and electrolyte materials with high ionic conductivity are usually selected to improve the electron/ion conduction of the composite cathode. In this work, PEO-LiTFSI-LLZO composite polymer electrolyte (CPE) with high ionic conductivity was prepared. The ionic conductivity was 1.16×10^-4 and 7.26×10^-4 S cm^-1 at 20 and 60℃, respectively. Meanwhile, the composite sulfur cathode was prepared with Sulfur, reduced graphene oxide and composite polymer electrolyte slurry (S-rGO-CPEs). In addition to improving the ion conductivity in the cathode, CPEs also replaces the role of binder. The influence of different contents of CPEs in the cathode material on the performance of the constructed battery was investigated. The results show that the electrochemical performance of the all-solid-state lithium-sulfur battery is the best when the content of the composite electrolyte in the cathode is 40%. Under the condition of 0.2C and 45℃, the charging and discharging capacity of the first cycle is 923 mAh g^-1, and the retention capacity is 653 mAh g^-1 after 50 cycles.

• 접착 및 계면
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• 제24권2호
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• pp.60-63
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• 2023

AlGaN/GaN 이종접합 구조는 이차원 전자 가스층(2-DEG)으로 인해 높은 전자이동도를 갖고 있으며, 넓은 밴드갭을 갖기 때문에 고온에서 높은 항복전압을 갖는 특성을 가지고 있어, 고전력, 고주파 전자 소자로 주목받고 있다. 이러한 이점을 갖고 있음에도 불구하고, 전류 붕괴 등의 다양한 소자 신뢰성에 영향을 주는 인자들이 있기 때문에 이를 해결하고자, 본 논문에서는 금속-유기-화학기상증착법을 이용하여 AlGaN/GaN 이종 접합구조와 SiN 패시베이션 층을 연속 증착시켰다. 이를 통해 HEMTs소자에 SiN패시베이션이 미치는 재료 특성 및 전기적 특성을 분석했으며, 결과를 바탕으로 저주파 잡음 특성을 측정해 소자의 전도 메커니즘 모델과 채널 내의 결함의 원인에 대해서 분석하였다.

• Restorative Dentistry and Endodontics
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• 제46권3호
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• pp.42.1-42.15
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• 2021

Objectives: This study aimed to analyze the main features of the 25 most-cited articles in minimally invasive access cavities. Materials and Methods: An electronic search was conducted on the Clarivate Analytics' Web of Science 'All Databases' to identify the most-cited articles related to this topic. Citation counts were cross-matched with data from Elsevier's Scopus and Google Scholar. Information about authors, contributing institutions and countries, year and journal of publication, study design and topic, access cavity, and keywords were analyzed. Results: The top 25 most-cited articles received a total of 572 (Web of Science), 1,160 (Google Scholar) and 631 (Scopus) citations. It was observed a positive significant association between the number of citations and age of publication (r = 0.6907, p < 0.0001); however, there was no significant association regarding citation density and age of publication (r = -0.2631, p = 0.2038). The Journal of Endodontics made the highest contribution (n = 15, 60%). The United States had the largest number of publications (n = 7) followed by Brazil (n = 4), with the most contributions from the University of Tennessee and Grande Rio University (n = 3), respectively. The highest number of most-cited articles were ex vivo studies (n = 16), and 'fracture resistance' was the major topic studied (n = 10). Conclusions: This study revealed a growing interest for researchers in the field of minimally invasive access cavities. Future trends are focused on the expansion of collaborative networks and the conduction of laboratory studies on under-investigated parameters.

• 한국정보전자통신기술학회논문지
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• 제16권6호
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• pp.434-440
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• 2023

본 논문에서는 교류 서보 전동기 PI 전류제어를 위한 주요 시스템 파라미터인 상저항과 상인덕턴스를 측정하는 방법을 제시한다. 서보 전동기 전류제어를 위한 PI 제어이득은 주요 계통 파라미터인 권선간 저항과 인덕턴스 정보를 활용하여 튜닝하는 자동적 방법이 기본적으로 사용된다. 본 연구에서는 이 두 파라미터를 3상 인버터 제어를 통해 계측하는 방법을 제시한다. 이 제어 및 계측 방법은 3상 인버터를 이용하여 3상 권선에 비례입력 만을 이용하는 스텝 전류제어를 수행하고 그 결과로 얻어진 출력 상전류를 측정함으로써 구현된다. 더불어 이 방법은 권선간 인덕턴스 계측을 위해 특정 스위칭모드에서의 인버터 자연-순환(freewheeling) 전류를 이용한다. 이 인버터 제어를 이용하는 측정 방법은 새로운 추가 계측 회로 및 복잡한 계측 알고리즘을 사용하지 않고 실시간으로 파라미터들을 계측 및 연산할 수 있는 해석적 방법이다. 실제 전동기 제어에 사용되어지는 구동기 회로를 그대로 사용하면서 스위칭소자의 도통저항과 각종 결선 저항을 포함하는 합성 저항 및 인덕턴스를 계측할 수 있는 방법이다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.284-284
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• 2016

Topological insulator (TI) is a bulk-insulating material with topologically protected Dirac surface states in the band gap. In particular, $Bi_2Se_3$ attracted great attention as a model three-dimensional TI due to its simple electronic structure of the surface states in a relatively large band gap (~0.3 eV). However, experimental efforts using $Bi_2Se_3$ have been difficult due to the abundance of structural defects, which frequently results in the bulk conduction being dominant over the surface conduction in transport due to the bulk doping effects of the defect sites. One promising approach in avoiding this problem is to reduce the structural defects by heteroepitaxially grow $Bi_2Se_3$ on a substrate with a compatible lattice structure, while also preventing surface degradation by encapsulating the pristine interface between $Bi_2Se_3$ and the substrate in a clean growth environment. A particularly promising choice of substrate for the heteroepitaxial growth is hexagonal boron nitride (h-BN), which has the same two-dimensional (2D) van der Waals (vdW) layered structure and hexagonal lattice symmetry as $Bi_2Se_3$. Moreover, since h-BN is a dielectric insulator with a large bandgap energy of 5.97 eV and chemically inert surfaces, it is well suited as a substrate for high mobility electronic transport studies of vdW material systems. Here we report the heteroepitaxial growth and characterization of high quality topological insulator $Bi_2Se_3$ thin films prepared on h-BN layers. Especially, we used molecular beam epitaxy to achieve high quality TI thin films with extremely low defect concentrations and an ideal interface between the films and substrates. To optimize the morphology and microstructural quality of the films, a two-step growth was performed on h-BN layers transferred on transmission electron microscopy (TEM) compatible substrates. The resulting $Bi_2Se_3$ thin films were highly crystalline with atomically smooth terraces over a large area, and the $Bi_2Se_3$ and h-BN exhibited a clear heteroepitaxial relationship with an atomically abrupt and clean interface, as examined by high-resolution TEM. Magnetotransport characterizations revealed that this interface supports a high quality topological surface state devoid of bulk contribution, as evidenced by Hall, Shubnikov-de Haas, and weak anti-localization measurements. We believe that the experimental scheme demonstrated in this talk can serve as a promising method for the preparation of high quality TI thin films as well as many other heterostructures based on 2D vdW layered materials.