• 제목/요약/키워드: Electron wavelength

검색결과 377건 처리시간 0.027초

나노입자 배열을 이용한 분자 검출 (Detection of Molecules using the Nanoparticle Arrays)

  • 하동한;김상훈;윤용주;박형주;윤완수
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2008년도 추계학술대회A
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    • pp.1617-1622
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    • 2008
  • We report a new molecular detection process which measures the changes in the plasmon resonance peaks of periodic Au nanoparticle arrays fabricated using the electron beam lithography. As the Au nanoparticle arrays are modified by the chemical reaction in solutions having various concentrations of a target molecule, both the position and intensity of the plasmon peak change in proportion to the concentration of the target molecule. We expect that the process developed in this work can be employed for fine tuning of the plasmon peak wavelength and also for the optical detection of various kinds of molecules. Moreover, this method may improve the measurement accuracy compared with existing approaches that use only one change (peak wavelength or peak intensity) as a readout value for the molecular detection.

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EPD time delay in etching of stack down WSix gate in DPS+ poly chamber

  • Ko, Yong Deuk;Chun, Hui-Gon
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
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    • pp.130-136
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    • 2002
  • Device makers want to make higher density chips as devices shrink, especially WSix poly stack down is one of the key issues. However, EPD (End Point Detection) time delay was happened in DPS+ poly chamber which is a barrier to achieve device shrink because EPD time delay killed test pattern and next generation device. To investigate the EPD time delay, a test was done with patterned wafers. This experimental was carried out combined with OES(Optical Emission Spectroscopy) and SEM (Scanning Electron Microscopy). OES was used to find corrected wavelength in WSix stack down gate etching. SEM was used to confirm WSix gate profile and gate oxide damage. Through the experiment, a new wavelength (252nm) line of plasma is selected for DPS+ chamber to call correct EPD in WSix stack down gate etching for current device and next generation device.

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광화학 반응에 의한 TiO2 나노입자 형성 및 광학특성(I) (Photochemical Synthesis and Optical Properties of TiO2 Nanoparticles( I ))

  • 정재훈;문정오;문병기;손세모;정수태
    • 한국전기전자재료학회논문지
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    • 제16권2호
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    • pp.125-130
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    • 2003
  • TiO$_2$ nanoparticles were prepared by photochemical synthesis in the dry toluene. The shape and size of the amorphous TiO$_2$ nanoparticles were investigated by transmission electron microscope. The particle size was varied by the contents of the titanium (IV) isopropoxide in dry toluene. Especially networked TiO$_2$ particles were formed from 40% titanium (IV) isopropoxide solution. The optical absorption spectra, photoluminescence, and PL excitation spectra of TiO$_2$ in dry toluene were obtained. The were shifted to the short wavelength as the contents of TiO$_2$ were increased. PL excitation had the peak at the wavelength regions is which the absorption increased steeply.

$Mg_2$$SnO_4$:Mn 녹색 형광체의 저전압 음극선 발광 특성 (Cathodoluminescence of $Mg_2$$SnO_4$:Mn,:Mn Green Phosphor under Low-Voltage Electron Excitation)

  • 김경남;정하균;박희동;김도진
    • 한국재료학회지
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    • 제11권9호
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    • pp.759-762
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    • 2001
  • Mg$_2$SnO$_4$having an inverse spinel structure was selected as a new host material of $Mn^{2+}$ activator. The luminescence of the $Mg_2$SnO$_4$:Mn phosphor prepared by the solid-state reaction were investigated under ultraviolet and low-voltage electron excitation. The Mn-doped magnesium tin oxide exhibited strong green emission with the spectrum centered at 500nm wavelength. It was explained that the green emission in $Mg_2$SnO$_4$:Mn phosphor is due to energy transfer from $^4T_1to ^6A_1\;of\; Mn^{2+}$ ion at tetrahedral site in the spinel structure. The optimum concentration of $Mn^{2+}$/ion exhibiting maximum emission intensity by the low-voltage electron excitation was 0.6mol%. ?

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Electron Pre-acceleration in Weak Quasi-perpendicular Shocks in Clusters of Galaxies

  • Ha, Ji-Hoon;Kang, Hyesung;Ryu, Dongsu
    • 천문학회보
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    • 제44권1호
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    • pp.49.1-49.1
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    • 2019
  • Giant radio relics in the outskirts of galaxy clusters have been observed and they are interpreted as synchrotron emission from relativistic electrons accelerated via diffusive shock acceleration (DSA) in weak shocks of Ms < 3.0. In the DSA theory, the particle momentum should be greater than a few times the momentum of thermal protons to cross the shock transition and participate in the Fermi acceleration process. In the equilibrium, the momentum of thermal electrons is much smaller than the momentum of thermal protons, so electrons need to be pre-accelerated before they can go through DSA. To investigate such electron injection process, we study the electron pre-acceleration in weak quasi-perpendicular shocks (Ms = 2.0 - 3.0) in an ICM plasma (kT = 8.6 keV, beta = 100) through 2D particle-in-cell simulations. It is known that in quasi-perpendicular shocks, a substantial fraction of electrons could be reflected upstream, gain energy via shock drift acceleration (SDA), and generate oblique waves via the electron firehose instability (EFI), leading the energization of electrons through wave-particle interactions. We find that such kinetic processes are effective only in supercritical shocks above a critical Mach number, $Ms{\ast}{\sim}2.3$. In addition, even in shocks with Ms > 2.3, energized electrons may not reach high energies to be injected to DSA, because the oblique EFI alone fails to generate long-wavelength waves. Our results should have implications for the origin and nature of radio relics.

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Eye safety 라이다 센서용 황화납 양자점 기반 SWIR photodetector 개발 (Shortwave Infrared Photodetector based on PbS Quantum Dots for Eye-Safety Lidar Sensors)

  • 최수지;권진범;하윤태;정대웅
    • 센서학회지
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    • 제32권5호
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    • pp.285-289
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    • 2023
  • Recently, the demand for lidar systems for autonomous driving is increasing, and research on Shortwave Infrared(SWIR) photodetectors for this purpose is being actively conducted. Most SWIR photodetectors currently being developed are based on InGaAs, and have the disadvantages of complex processes, high prices, and limitations in research due to monopoly. In addition, current SWIR photodetectors use lasers in the 905 nm wavelength band, which can pass through the pupil and cause damage to the retina. Therefore, it is required to develop a SWIR photodetector using a wavelength band of 1400 nm or more to be safe for human eyes, and to develop a material that can replace the proprietary InGaAs. PbS QDs are group 4-6 compound semiconductors whose absorption wavelength band can be adjusted from 1000 to 2700 nm, and have the advantage of being simple to process. Therefore, in this study, PbS QDs having an absorption wavelength peak of 1415 nm were synthesized, and a SWIR photodetector was fabricated using this. In addition, the photodetector's responsivity was improved by applying P3HT and ZnO NPs to improve electron hole mobility. As a result of the experiment, it was confirmed that the synthesized PbS QDs had excellent FWHM characteristics compared to commercial PbS QDs, and it was confirmed that the photodetector had a maximum current change of about 1.6 times.

단일 ZnO 나노선의 광전도 메카니즘에 대한 연구 (Study for photoconduction mechanism of a single ZnO nanowire)

  • 김기현;김상식
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.60-61
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    • 2005
  • Electrodes were fabricated on a single ZnO nanowire by photolithography process, metal evaporation, and lift-off. The slow photoresponses of the ZnO nanowire under the continuous illumination of 325nm-wavelength light (corresponding to above-bandgap excitation) indicate that the traps related to oxygen vacancy disturb the flow of electron in ZnO nanowire. The photoresponse and PL spectra were measured, and observed that the excitonic band in the PL spectrum was absent in the photoresponse.

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차세대 에너지 이용을 위한 전자빔 발생장치에 관한 연구 (A Study on Producing Electron Beam For the lustallation of Future Energy)

  • 김원섭
    • 한국조명전기설비학회:학술대회논문집
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    • 한국조명전기설비학회 2004년도 춘계학술대회 논문집
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    • pp.374-377
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    • 2004
  • We present a detailed design study of high power large diameter backward wave oscillator operating at 24 GHz for a beam energy of 100 keV. The ratio of the mean diameter of the slow wave structure to the wavelength of output microwaves is increased to be 4.8. Analysis is made within the scope of linear theory of absolute instability.

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A $32{\times}33$ Photo-elements MOS Image Sensor

  • Park, Sang-Sik;Park, Jeong-Ok;Lee, Jong-Duk
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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    • pp.411-415
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    • 1987
  • A $32{\times}33$ MOS-type area image sensor has been fabricated. The blooming current is reduced to 1/14 by forming +p photocell in P-well instead of a simple p-type substrate. A shallow n+ junction is made to improve the sensitivity of photodiode on short wavelength. Bootstrapping circuit technique is applied to obtain high speed dynamic shift register. The shift register operates at up to 10MHz for 7V clock.

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