• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.710-713
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• 2002

In order to improve the power efficiency of multi-layer organic light emitting diodes (OLEDs), electron injection into ETL(electron transport layer) from cathode at the interface between ETL and cathode was enhanced by interposing a proper electron injection layer at the interface. The HTL(hole transport layer) and ETL materials used were N, N'diphenyl- N, N' - bis(3-methylphenyl-1, 1'- biphenyl - 4, 4 'diamine (TPD) and tris (8-hydroxyquinoline) aluminum ($Alq_3$) respectively. Cathodes using co-evaporated Al-CsF, Al-KF, and Al-NaF composites are adopted to enhance the electrical and optical properties of OLEDs. OLEDs with alkaline metal-doped cathode show a luminance of as high as 35,000 cd/$m^2$, and external quantum efficiency about 1.35 %. In addition, they show higher power efficiency at all bias conditions and good reproducibility.

• 한국전기전자재료학회논문지
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• 제35권1호
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• pp.93-97
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• 2022

We report highly efficient quantum dot light-emitting diodes (QLEDs) with TiO₂ nanoparticles (NPs) as an alternative electron transport layer (ETL) and poly (methyl methacrylate) (PMMA) as an insulating layer. TiO₂ NPs were applied as ETLs of inverted structured QLEDs and the effect of the addition of PMMA between ETL and emission layer (EML) on device characteristics was studied in detail. A thin PMMA layer supported to make the charge balance in the EML of QLEDs due to its insulating property, which limits electron injection effectively. Green QLEDs with a PMMA layer produced the maximum luminance of 112,488 cd/m² and a current efficiency of 25.92 cd/A. We expect the extended application of TiO₂ NPs as the electron transport layer in inverted structured QLEDs device in the near future.

• ETRI Journal
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• 제34권5호
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• pp.690-695
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• 2012

We investigate the light-emitting performances of blue phosphorescent organic light-emitting diodes (PHOLEDs) with three different electron injection and transport materials, that is, bathocuproine(2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) (Bphen), 1,3,5-tri(m-pyrid-3-yl-phenyl)benzene (Tm3PyPB), and 2,6-bis(3-(carbazol-9-yl)phenyl)pyridine (26DCzPPy), which are partially doped with cesium metal. We find that the device characteristics are very dependent on the nature of the introduced electron injection layer (EIL) and electron transporting layer (ETL). When the appropriate EIL and ETL are combined, the peak external quantum efficiency and peak power efficiency improve up to 20.7% and 45.6 lm/W, respectively. Moreover, this blue PHOLED even maintains high external quantum efficiency of 19.6% and 16.9% at a luminance of $1,000cd/m^2$ and $10,000cd/m^2$, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.151.2-151.2
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• 2016

We characterized the n-type organic field-effect transistors (OFETs) with non-conjugated polyelectrolytes (NPEs) interlayers as the electron injection layer. Novel NPEs with various ions (Cl-, Br-, I-) improved the electron mobility from $5.06{\times}10^{-3}$ to $2.10{\times}10^{-2}cm^2V^{-1}s^{-1}$ in OFETs based [6,6]-Phenyl-$C_{61}$-butyric acid methyl ester (PCBM) when $PEIEH^+I^-$ spin-cast from 0.6% solution was deposited onto the PCBM layer. Reduced electron injection barrier (${\phi}_e$) at NPE/metal electrode interface was induced by dipole formation and led to increase the electron injection and transport. These findings are important for understanding how NPEs function in devices, the improvement of device performance, and the design of new materials for use in optoelectronic devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.305-306
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• 2009

In this study, we have invastigated the recombination zone in the blue phosphorescent organic light-emitting devices with various partially doped structures. The basic device structure of the blue PHOLED was anode / hole injection layer (HIL) / hole transport layer (HTL) / emittingvastigated the recombination zone in the blue layer (EML) / hole blocking layer (HBL) / electron transport layer (ETL) / electron injection layer (EIL) / cathode. After the preparation of the blue PHOLED, the current density (J) - voltage (V) - luminance (L) and current efficiency characteristics were measured.

• 청정기술
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• 제29권4호
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• pp.244-248
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• 2023

최근 많은 정보를 신속하게 전달하기위한 방법으로 디스플레이의 역할은 아주 중요하며 다양한 색을 자연색에 가깝게 재현하기 위한 연구가 진행 중이다. 특히 정확하고 풍부한 색을 표현하기 위한 방법으로 발광 구조에 대한 연구가 진행되고 있다. 기술의 고도화, 디바이스의 소형화로 인해 작지만 높은 시인성과 에너지 소모에서 높은 효율을 가진 디스플레이의 필요성이 지속적으로 증가되고 있는 실정이다. OLED의 효율을 향상시키기 위해서는 운반자 주입의 향상, 전자와 정공이 수적인 균형을 이루며 효율적으로 재결합 할 수 있는 소자의 구조, 발광 효율이 큰 물질의 개발 등 OLED의 효율을 향상시키고자 하는 노력은 다방면에서 진행되고 있다. 본 연구에서는 7층 적층구조 배면발광 청색 OLED 소자의 전기적 특성 및 광학적 특성을 분석하였다. 소자는 제작이 용이하며, 고효율 및 고휘도화가 가능한 Blue 발광물질인 4,4'-Bis(carbazol-9-yl)biphenyl : Ir(difppy)2(pic)를 사용하였다. OLED 소자 제작은 SUNICEL PLUS 200 시스템을 이용하여 5×10-8 Torr 이하의 고진공 상태에서 In-Situ 방식으로 증착하였다. Electron or Hole Injection Layer(EIL or HIL) Electron or Hole Transport Layer(ETL or HTL) 등이 추가된 5층 구조에 Electron or Hole Blocking Layer(EBL or HBL)을 추가한 7층 구조로 실험을 진행하였다. 제작한 소자의 전기적, 광학적 특성을 분석한 결과 EBL 층과 HBL층을 삽입하여 색의 확산을 방지한 소자는 색 순도가 우수하게 나타났다. 본 연구결과를 이용하여 청색 OLED 디스플레이 소자의 연구 개발 기초 및 실용화에 크게 기여할 것으로 기대된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.147-147
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• 2015

The multilayer structure of the organic light emitting diode has merits of improving interfacial characteristics and helping carriers inject into emission layer and transport easier. There are many reports to control hole injection from anode electrode by using transition metal oxide as an anode buffer layer, such as V2O5, MoO3, NiO, and Fe3O4. In this study, we apply thin films of LiF which is usually inserted as a thin buffer layer between electron transport layer(ETL) and cathode, as an anode buffer layer to reduce the hole injection barrier height from ITO. The thickness of LiF as an anode buffer layer is tested from 0 nm to 1.0 nm. As shown in the figure 1 and 2, the luminous efficiency versus current density is improved by LiF anode buffer layer, and the threshold voltage is reduced when LiF buffer layer is increased up to 0.6 nm then the device does not work when LiF thickness is close to 1.0 nm As a result, we can confirm that the thin layer of LiF, about 0.6 nm, as an anode buffer reduces the hole injection barrier height from ITO, and this results the improved luminous efficiency. This study shows that LiF can be used as an anode buffer layer for improved hole injection as well as cathode buffer layer.

• 한국전기전자재료학회논문지
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• 제37권3호
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• pp.309-313
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• 2024

The key to determining the lifetime of OLED device is how much brightness can be maintained. It can be said that there are internal and external causes for the degradation of OLED devices. The most important cause of internal degradation is bonding and degradation in the excited state due to the electrochemical instability of organic materials. The structure of OLED modeled in this paper consists of a cathode layer, electron injection layer (EIL), electron transport layer (ETL), light emission layer, hole transport layer (HTL), hole injection layer (HIL), and anode layer on a glass substrate from top to bottom. It was confirmed that the temperature generated in OLED was distributed around the maximum of 343.15 K centered on the emission layer. It can be seen that the heat distribution generated in the presented OLED structure has an asymmetrically high temperature distribution toward the cathode, which is believed to be because the sizes of the cathode and positive electrode are asymmetric. Therefore, when designing OLED, it is believed that designing the structures of the cathode and anode electrodes as symmetrically as possible can ensure uniform heat distribution, maintain uniform luminance of OLED, and extend the lifetime. The thermal distribution of OLED was analyzed using the finite element method according to Comsol 5.2.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.51-54
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• 2007

Top-emission 3.5 inch qVGA IOD (Inverted AMOLED) was fabricated with inverted EL structure driven by a-Si TFT backplane. In order to get stable driving TFT, we used FCP(Field Control Plate) layer which was connected with the source of the driving TFT. And we developed planarization process to planarize the cathode layer which was the bottom layer of inverted OLED. Our unique IOD structure is “a-Si TFT/ Al(Cathode)/ LiF/ LG-201(ETL)/ EML(RGB)/ HTL/ LG-101(HIL & Buffer layer)/ IZO(Anode)”. LG-201(ETL) layer was studied for more efficient electron injection from cathode to EML, and LG-101(HIL & Buffer layer) covered by IZO anode was also explored for decreasing the EL surface damage.

• 폴리머
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• 제36권4호
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• pp.519-524
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• 2012

공액고분자 전해질 전자수송층을 이용하는 고분자 발광소자의 정전용량을 측정하는 것은 전류밀도-전압-발광특성을 측정하는 방법과 더불어 전자수송층으로서 공액고분자 전해질의 기능을 이해하기 위한 소자물리 연구에서 중요한 정보를 제공해준다. 본 연구에서는 고분자 전해질의 반대 이온의 종류에 따라 저주파수 영역에서 정전용량의 거동이 변화하는 것으로부터 전하 주입의 메카니즘에서 차이점이 있음을 분석하였다. 정전용량 모델을 이용한 분석은 전자주입 메카니즘이 음극/전자수송층/발광층 사이의 계면에서 발생하는 쌍극자 배열 또는 전하수송체의 축적에 의한 것임을 나타내었다.