• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.710-713
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• 2002

In order to improve the power efficiency of multi-layer organic light emitting diodes (OLEDs), electron injection into ETL(electron transport layer) from cathode at the interface between ETL and cathode was enhanced by interposing a proper electron injection layer at the interface. The HTL(hole transport layer) and ETL materials used were N, N'diphenyl- N, N' - bis(3-methylphenyl-1, 1'- biphenyl - 4, 4 'diamine (TPD) and tris (8-hydroxyquinoline) aluminum ($Alq_3$) respectively. Cathodes using co-evaporated Al-CsF, Al-KF, and Al-NaF composites are adopted to enhance the electrical and optical properties of OLEDs. OLEDs with alkaline metal-doped cathode show a luminance of as high as 35,000 cd/$m^2$, and external quantum efficiency about 1.35 %. In addition, they show higher power efficiency at all bias conditions and good reproducibility.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.93-97
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• 2022

We report highly efficient quantum dot light-emitting diodes (QLEDs) with TiO₂ nanoparticles (NPs) as an alternative electron transport layer (ETL) and poly (methyl methacrylate) (PMMA) as an insulating layer. TiO₂ NPs were applied as ETLs of inverted structured QLEDs and the effect of the addition of PMMA between ETL and emission layer (EML) on device characteristics was studied in detail. A thin PMMA layer supported to make the charge balance in the EML of QLEDs due to its insulating property, which limits electron injection effectively. Green QLEDs with a PMMA layer produced the maximum luminance of 112,488 cd/m² and a current efficiency of 25.92 cd/A. We expect the extended application of TiO₂ NPs as the electron transport layer in inverted structured QLEDs device in the near future.

• ETRI Journal
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• v.34 no.5
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• pp.690-695
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• 2012

We investigate the light-emitting performances of blue phosphorescent organic light-emitting diodes (PHOLEDs) with three different electron injection and transport materials, that is, bathocuproine(2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) (Bphen), 1,3,5-tri(m-pyrid-3-yl-phenyl)benzene (Tm3PyPB), and 2,6-bis(3-(carbazol-9-yl)phenyl)pyridine (26DCzPPy), which are partially doped with cesium metal. We find that the device characteristics are very dependent on the nature of the introduced electron injection layer (EIL) and electron transporting layer (ETL). When the appropriate EIL and ETL are combined, the peak external quantum efficiency and peak power efficiency improve up to 20.7% and 45.6 lm/W, respectively. Moreover, this blue PHOLED even maintains high external quantum efficiency of 19.6% and 16.9% at a luminance of $1,000cd/m^2$ and $10,000cd/m^2$, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.151.2-151.2
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• 2016

We characterized the n-type organic field-effect transistors (OFETs) with non-conjugated polyelectrolytes (NPEs) interlayers as the electron injection layer. Novel NPEs with various ions (Cl-, Br-, I-) improved the electron mobility from $5.06{\times}10^{-3}$ to $2.10{\times}10^{-2}cm^2V^{-1}s^{-1}$ in OFETs based [6,6]-Phenyl-$C_{61}$-butyric acid methyl ester (PCBM) when $PEIEH^+I^-$ spin-cast from 0.6% solution was deposited onto the PCBM layer. Reduced electron injection barrier (${\phi}_e$) at NPE/metal electrode interface was induced by dipole formation and led to increase the electron injection and transport. These findings are important for understanding how NPEs function in devices, the improvement of device performance, and the design of new materials for use in optoelectronic devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.305-306
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• 2009

In this study, we have invastigated the recombination zone in the blue phosphorescent organic light-emitting devices with various partially doped structures. The basic device structure of the blue PHOLED was anode / hole injection layer (HIL) / hole transport layer (HTL) / emittingvastigated the recombination zone in the blue layer (EML) / hole blocking layer (HBL) / electron transport layer (ETL) / electron injection layer (EIL) / cathode. After the preparation of the blue PHOLED, the current density (J) - voltage (V) - luminance (L) and current efficiency characteristics were measured.

• Clean Technology
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• v.29 no.4
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• pp.244-248
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• 2023

Recently, displays play an important role in quickly delivering a lot of information. Research is underway to reproduce various colors close to natural colors. In particular, research is being conducted on the light emitting structure of displays as a method of expressing accurate and rich colors. Due to the advancement of technology and the miniaturization of devices, the need for small but high visibility displays with high efficiency in energy consumption continues to increase. Efforts are being made in various ways to improve OLED efficiency, such as improving carrier injection, structuring devices that can efficiently recombine electrons and holes in a numerical balance, and developing materials with high luminous efficiency. In this study, the electrical and optical properties of the seven-layer stacked structure rear-light emitting blue OLED device were analyzed. 4,4'-Bis(carazol-9-yl)biphenyl:Ir(difppy)2(pic), a blue light emitting material that is easy to manufacture and can be highly efficient and brightened, was used. OLED device manufacturing was performed via the in-situ method in a high vacuum state of 5×10-8 Torr or less using a Sunicel Plus 200 system. The experiment was conducted with a seven-layer structure in which an electron or hole blocking layer (EBL or HBL) was added to a five-layer structure in which an electron or hole injection layer (EIL or HIL) or an electron or hole transport layer (ETL or HTL) was added. Analysis of the electrical and optical properties showed that the device that prevented color diffusion by inserting an EBL layer and a HBL layer showed excellent color purity. The results of this study are expected to greatly contribute to the R&D foundation and practical use of blue OLED display devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.147-147
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• 2015

The multilayer structure of the organic light emitting diode has merits of improving interfacial characteristics and helping carriers inject into emission layer and transport easier. There are many reports to control hole injection from anode electrode by using transition metal oxide as an anode buffer layer, such as V2O5, MoO3, NiO, and Fe3O4. In this study, we apply thin films of LiF which is usually inserted as a thin buffer layer between electron transport layer(ETL) and cathode, as an anode buffer layer to reduce the hole injection barrier height from ITO. The thickness of LiF as an anode buffer layer is tested from 0 nm to 1.0 nm. As shown in the figure 1 and 2, the luminous efficiency versus current density is improved by LiF anode buffer layer, and the threshold voltage is reduced when LiF buffer layer is increased up to 0.6 nm then the device does not work when LiF thickness is close to 1.0 nm As a result, we can confirm that the thin layer of LiF, about 0.6 nm, as an anode buffer reduces the hole injection barrier height from ITO, and this results the improved luminous efficiency. This study shows that LiF can be used as an anode buffer layer for improved hole injection as well as cathode buffer layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.3
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• pp.309-313
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• 2024

The key to determining the lifetime of OLED device is how much brightness can be maintained. It can be said that there are internal and external causes for the degradation of OLED devices. The most important cause of internal degradation is bonding and degradation in the excited state due to the electrochemical instability of organic materials. The structure of OLED modeled in this paper consists of a cathode layer, electron injection layer (EIL), electron transport layer (ETL), light emission layer, hole transport layer (HTL), hole injection layer (HIL), and anode layer on a glass substrate from top to bottom. It was confirmed that the temperature generated in OLED was distributed around the maximum of 343.15 K centered on the emission layer. It can be seen that the heat distribution generated in the presented OLED structure has an asymmetrically high temperature distribution toward the cathode, which is believed to be because the sizes of the cathode and positive electrode are asymmetric. Therefore, when designing OLED, it is believed that designing the structures of the cathode and anode electrodes as symmetrically as possible can ensure uniform heat distribution, maintain uniform luminance of OLED, and extend the lifetime. The thermal distribution of OLED was analyzed using the finite element method according to Comsol 5.2.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.51-54
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• 2007

Top-emission 3.5 inch qVGA IOD (Inverted AMOLED) was fabricated with inverted EL structure driven by a-Si TFT backplane. In order to get stable driving TFT, we used FCP(Field Control Plate) layer which was connected with the source of the driving TFT. And we developed planarization process to planarize the cathode layer which was the bottom layer of inverted OLED. Our unique IOD structure is “a-Si TFT/ Al(Cathode)/ LiF/ LG-201(ETL)/ EML(RGB)/ HTL/ LG-101(HIL & Buffer layer)/ IZO(Anode)”. LG-201(ETL) layer was studied for more efficient electron injection from cathode to EML, and LG-101(HIL & Buffer layer) covered by IZO anode was also explored for decreasing the EL surface damage.

• Polymer(Korea)
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• v.36 no.4
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• pp.519-524
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• 2012

Capacitance measurements of the polymer light-emitting diodes (PLEDs) with conjugated polyelectrolyte (CPE) electron transporting layers (ETLs) provide important information of device physics for understanding the function of CPEs as ETLs, together with current density-voltage-luminescence measurements. We investigated the counterion-dependent capacitance behaviors that present a highly negative or positive capacitance at the low frequency, and suggested different carrier injection mechanisms. Capacitance model study reveals that the electron injection mechanism can be described either by the dipole alignment scheme or by electronic charge carrier accumulation at the cathode/ETL/emission layer interfaces.