• Title/Summary/Keyword: Electron hole recombination

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Preparation and Properties of Organic Electroluminescent Devices (유기 전계발광소자의 제작과 특성 연구)

  • 노준서;장호정
    • Journal of the Microelectronics and Packaging Society
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    • v.9 no.1
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    • pp.9-13
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    • 2002
  • Recently, Organic electroluminescent devices (OELDs) have been demonstrated the medium sized full color display with effective multi-layer thin films. In this study, the multi-layer OELDs were prepared on the patterened ITO (indium tin oxide)/glass substrates by the vacuum thermal evaporation method. The low molecule compounds such as $Alq_3$(trim-(8-hydroxyquinoline)aluminum) and CTM (carrier transfer material) as the electron transport and injection layers as well as TPD (triphenyl-diamine) and CuPc (copper phthalocyanine) as the hole transport and injection layers were used. The luminance was rapidly increased above the threshold voltage of 10 V. The luminance and emission spectrum for the OELDs samples with $A1/CTM/Alq_3$/TPD/1TO structures were found to be 430 cd/$m^2$and 512 nm at 17 V showing green color emission. In contrast, the samples with $Li-A1/Alq_3$/TPD/CuPC/1TO multi-structures showed 508 nm in emission spectrum and 650 cd/$m^2$at 17 V in the luminance. The increment of luminance may be ascribed to the improved efficiency of recombination in the region of the emission layers by the deposition of CuPc as hole injection layer and the low work function of the Li-Al electrode compared to the Al electrode.

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Fabrication and Photoelectrochemical Properties of a Cu2O/CuO Heterojunction Photoelectrode for Hydrogen Production from Solar Water Splitting (태양광 물 분해를 통한 수소 생산용 Cu2O/CuO 이종접합 광전극의 제작 및 광전기화학적 특성)

  • Kim, Soyoung;Kim, Hyojin;Hong, Soon-Ku;Kim, Dojin
    • Korean Journal of Materials Research
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    • v.26 no.11
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    • pp.604-610
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    • 2016
  • We report on the fabrication and characterization of a novel $Cu_2O/CuO$ heterojunction structure with CuO nanorods embedded in $Cu_2O$ thin film as an efficient photocathode for photoelectrochemical (PEC) solar water splitting. A CuO nanorod array was first prepared on an indium-tin-oxide-coated glass substrate via a seed-mediated hydrothermal synthesis method; then, a $Cu_2O$ thin film was electrodeposited onto the CuO nanorod array to form an oxide semiconductor heterostructure. The crystalline phases and morphologies of the heterojunction materials were examined using X-ray diffraction and scanning electron microscopy, as well as Raman scattering. The PEC properties of the fabricated $Cu_2O/CuO$ heterojunction photocathode were evaluated by photocurrent conversion efficiency measurements under white light illumination. From the observed PEC current density versus voltage (J-V) behavior, the $Cu_2O/CuO$ photocathode was found to exhibit negligible dark current and high photocurrent density, e.g. $-1.05mA/cm^2$ at -0.6 V vs. $Hg/HgCl_2$ in $1mM\;Na_2SO_4$ electrolyte, revealing the effective operation of the oxide heterostructure. The photocurrent conversion efficiency of the $Cu_2O/CuO$ photocathode was estimated to be 1.27% at -0.6 V vs. $Hg/HgCl_2$. Moreover, the PEC current density versus time (J-T) profile measured at -0.5 V vs. $Hg/HgCl_2$ on the $Cu_2O/CuO$ photocathode indicated a 3-fold increase in the photocurrent density compared to that of a simple $Cu_2O$ thin film photocathode. The improved PEC performance was attributed to a certain synergistic effect of the bilayer heterostructure on the light absorption and electron-hole recombination processes.

Microfluidic Assisted Synthesis of Ag-ZnO Nanocomposites for Enhanced Photocatalytic Activity (광촉매 성능 강화를 위한 미세유체공정 기반 Ag-ZnO 나노복합체 합성)

  • Ko, Jae-Rak;Jun, Ho Young;Choi, Chang-Ho
    • Clean Technology
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    • v.27 no.4
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    • pp.291-296
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    • 2021
  • Recently, there has been increasing demand for advancing photocatalytic techniques that are capable of the efficient removal of organic pollutants in water. TiO2, a representative photocatalytic material, has been commonly used as an effective photocatalyst, but it is rather expensive and an alternative is required that will fulfill the requirements of both high performing photocatalytic activities and cost-effectiveness. In this work, ZnO, which is more cost effective than TiO2, was synthesized by using a microreactor-assisted nanomaterials (MAN) process. The process enabled a continuous production of ZnO nanoparticles (NPs) with a flower-like structure with high uniformity. In order to resolve the limited light absorption of ZnO arising from its large band gap, Ag NPs were uniformly decorated on the flower-like ZnO surface by using the MAN process. The plasmonic effect of Ag NPs led to a broadening of the absorption range toward visible wavelengths. Ag NPs also helped inhibit the electron-hole recombination by drawing electrons generated from the light absorption of the flower-like ZnO NPs. As a result, the Ag-ZnO nanocomposites showed improved photocatalytic activities compared with the flower-like ZnO NPs. The photocatalytic activities were evaluated through the degradation of methylene blue (MB) solution. Scanning electron microscopy (SEM), x-ray diffraction (XRD), and energy-dispersive x-ray spectroscopy (EDS) confirmed the successful synthesis of Ag-ZnO nanocomposites with high uniformity. Ag-ZnO nanocomposites synthesized via the MAN process offer the potential for cost-effective and scalable production of next-generation photocatalytic materials.

Enhancement and Quenching Effects of Photoluminescence in Si Nanocrystals Embedded in Silicon Dioxide by Phosphorus Doping (인의 도핑으로 인한 실리콘산화물 속 실리콘나노입자의 광-발광현상 증진 및 억제)

  • Kim Joonkon;Woo H. J.;Choi H. W.;Kim G. D.;Hong W.
    • Journal of the Korean Vacuum Society
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    • v.14 no.2
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    • pp.78-83
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    • 2005
  • Nanometric crystalline silicon (no-Si) embedded in dielectric medium has been paid attention as an efficient light emitting center for more than a decade. In nc-Si, excitonic electron-hole pairs are considered to attribute to radiative recombination. However the surface defects surrounding no-Si is one of non-radiative decay paths competing with the radiative band edge transition, ultimately which makes the emission efficiency of no-Si very poor. In order to passivate those defects - dangling bonds in the $Si:SiO_2$ interface, hydrogen is usually utilized. The luminescence yield from no-Si is dramatically enhanced by defect termination. However due to relatively high mobility of hydrogen in a matrix, hydrogen-terminated no-Si may no longer sustain the enhancement effect on subsequent thermal processes. Therefore instead of easily reversible hydrogen, phosphorus was introduced by ion implantation, expecting to have the same enhancement effect and to be more resistive against succeeding thermal treatments. Samples were Prepared by 400 keV Si implantation with doses of $1\times10^{17}\;Si/cm^2$ and by multi-energy Phosphorus implantation to make relatively uniform phosphorus concentration in the region where implanted Si ions are distributed. Crystalline silicon was precipitated by annealing at $1,100^{\circ}C$ for 2 hours in Ar environment and subsequent annealing were performed for an hour in Ar at a few temperature stages up to $1,000^{\circ}C$ to show improved thermal resistance. Experimental data such as enhancement effect of PL yield, decay time, peak shift for the phosphorus implanted nc-Si are shown, and the possible mechanisms are discussed as well.

Study on the Physical Properties of the Gamma Beam-Irradiated Teflon-FEP and PET Film (Teflon-FEP 와 PET Film 의 감마선 조사에 따른 물리적 특성에 관한 연구)

  • 김성훈;김영진;이명자;전하정;이병용
    • Progress in Medical Physics
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    • v.9 no.1
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    • pp.11-21
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    • 1998
  • Circular metal electrodes were vacuum-deposited with chromium on the both sides of Teflon-FEP and PET film characteristic of electret and the physical properties of the two polymers were observed during an irradiation by gamma-ray from $\^$60/Co. With the onset of irradiation of output 25.0 cGy/min the induced current increased rapidly for 2 sec, reached a maximum, and subsequently decreased. A steady-state induced current was reached about in 60 second. The dielectric constant and conductivity of Teflon-FEP were changed from 2.15 to 18.0 and from l${\times}$l0$\^$-17/ to 1.57${\times}$10$\^$-13/ $\Omega$-$\^$-1/cm$\^$-1/, respectively. For PET the dielectric constant was changed from 3 to 18.3 and the conductivity from 10$\^$-17/ to 1.65${\times}$10$\^$-13/ $\Omega$-$\^$-1/cm$\^$-1/. The increase of the radiation-induced steady state current I$\^$c/, permittivity $\varepsilon$ and conductivity $\sigma$ with output(4.0 cGy/min, 8.5 cGy/min, 15.6 cGy/min, 19.3 cGy/min) was observed. A series of independent measurements were also performed to evaluate reproducibility and revealed less than 1% deviation in a day and 3% deviation in a long term. Charge and current showed the dependence on the interval between measurements, the smaller the interval was, the bigger the difference between initial reading and next reading was. At least in 20 minutes of next reading reached an initial value. It may indicate that the polymers were exhibiting an electret state for a while. These results can be explained by the internal polarization associated with the production of electron-hole pairs by secondary electrons, the change of conductivity and the equilibrium due to recombination etc. Heating to the sample made the reading value increase in a short time, it may be interpreted that the internal polarization was released due to heating and it contributed the number of charge carriers to increase when the samples was again irradiated. The linearity and reproducibility of the samples with the applied voltage and absorbed dose and a large amount of charge measured per unit volume compared with the other chambers give the feasibility of a radiation detector and make it possible to reduce the volume of a detector.

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