• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.465-468
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• 1987

This paper describes a model to calculate the equilibrium electron density of MODFET at the interface that takes into account the simultaneous shallow and deep level in the Al-GaAs layer. In the present study we have made an investigation of the interface electron density with different values of the AlGaAs doping density and spacer layer thickness, considering simultaneously two doner levels. In this case, the ratio of the shallow to the deep donor concentraction is considered. From the comparison with early experimental results we could find the deep level and that the deep donor concentration is about 50% with the Al mole fraction X ${\sim}0.3$, activation energy Edx=65meV, temperature $77^{\circ}K$ and spacer thickness range $50A{\sim}100A$. Also we have investigated the effect of the temperature. As temperature increase, at critical mole fraction X the nature of the donor concentration changes from $\Gamma$ to L and X.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.05a
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• pp.651-652
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• 2012

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1602-1605
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• 2008

We considered most general electron emission caused by temperature as well as electric field with a free electron gas model. The total electron emission current density comes from field emission effect where electron energy is lower than vacuum and from thermionic emission effect where electron energy is higher than vacuum. The total electron emission current density is shown as a function of temperature for constant electric field, and as a function of electric field for constant temperature.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1817-1819
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• 2004

From the plasma application point of view, electron temperature and density are one of the most important parameters for plasma process. But it is only available to control plasma by adjusting external factors like gas pressure and input power. In this paper, pulse-modulated plasma is generated by modulating 13.56GHz RF power with 1, 5, 10kHz pulse. And Langmuir probe technique is used to study the distribution of electron temperature and density. When modulated pulse is off, electron temperature decreases gradually in form of exponential decay. The value t of exponential decay slope is 33.619, 13.834, 10.803 in 1kHz. 5kHz. 10kHz. This implies that this method can be used to control electron temperature and density.

• ETRI Journal
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• v.24 no.4
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• pp.270-279
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• 2002

We present a self-consistent numerical method for calculating the conduction-band profile and subband structure of AlGaN/GaN single heterojunctions. The subband calculations take into account the piezoelectric and spontaneous polarization effect and the Hartree and exchange-correlation interaction. We calculate the dependence of electron sheet concentration and subband energies on various structural parameters, such as the width and Al mole fraction of AlGaN, the density of donor impurities in AlGaN, and the density of acceptor impurities in GaN, as well as the electron temperature. The electron sheet concentration was sensitively dependent on the Al mole fraction and width of the AlGaN layer and the doping density of donor impurities in the AlGaN. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.

• The Korean Journal of Rheology
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• v.10 no.4
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• pp.256-258
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• 1998

An experimental study was done to improve the processability and optical property of linear low density polyethylene(LLDPE) film. By modifying the molecular structure of LLDPE with electron beam we could get the improved processability and optical property of film. By appropriate dosing of electron beam and a small addition of UV-stabilizer it was possible to produce gel-free film with low haze. The proceassability was also improved.

• Journal of Electrical Engineering and Technology
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• v.10 no.4
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• pp.1734-1737
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• 2015

Insulating characteristics of Cl₂-He mixture gases in gas discharges were analysed to evaluate ability of these gases for using in medium voltage and many industries. These are electron transport coefficients, which are the electron drift velocity, density-normalized longitudinal diffusion coefficient, and density-normalized effective ionization coefficient, in Cl₂-He mixtures. A two-term approximation of the Boltzmann equation was used to calculate the electron transport coefficients for the first time over a wide range of E/N (ratio of the electric field E to the neutral number density N). The limiting field strength values of E/N, (E/N)_lim, for these binary gas mixtures were also derived and compared with those of the pure SF₆ gas.

• Bulletin of the Korean Chemical Society
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• v.34 no.12
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• pp.3649-3653
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• 2013

As anode fabrication with different materials has been proven to be a successful alternative for enhancing power generation in the microbial fuel cells, a new approach to improved performance of MFCs with the use of menadione/carbon powder composite-modified carbon cloth anode has been explored in this study. Menadione has formal potential to easily accept electrons from the outer membrane cytochromes of electroactive bacteria that can directly interact with the solid surface. Surface bound menadione was able to maintain an electrical wiring with the trans-membrane electron transfer pathways to facilitate extracellular electron transfer to the electrode. In a single chamber air cathode MFC inoculated with aerobic sludge, maximum power density of $1250{\pm}35mWm^{-2}$ was achieved, which was 25% higher than that of an unmodified anode. The observed high power density and improved coulomb efficiency of 61% were ascribed to the efficient electron shuttling via the immobilized menadione.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.272-274
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• 1993

In this paper, We were studied the discharge occurrence voltage characteristics. discharge current-discharge voltage characteristics, electron temperature and electron density characteristics on the Facing Tarcket Sputtering System(FTSS) and fabrication of TiN thin films. The discharge occurrence voltage characteristics and discharge current are significantly affected by magnetic flux density. The minimum value of discharge occurrence voltage are obtained about 100[Gauss]. The electron temperature are about 4-8 [eV], and electron density are about $10^{10}cm^{-3}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.235.2-235.2
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• 2014

Plasma hardly grows in low pressure because of lack of collision. Especially, in extremely low pressure like 1 mTorr, the experiment scale is far larger than mean free path therefore plasma is hardly generated in such low pressure. But low pressure plasma has useful properties like low damage or fine sputtering process because it has typically low electron density. In here, thermal electron is used to make breakdown in low pressure easily and cylindrical geometry is used to help discharge easily. And we changed magnetic field strength to control electron density or temperature. In low pressure, density and temperature behavior is very interesting so its characteristics are examined here.