• 제목/요약/키워드: Electron carrier

검색결과 514건 처리시간 0.033초

Novel Activation by Electrochemical Potentiostatic Method

  • 이학형;이준기;정동렬;권광우;김익현
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 춘계학술발표대회
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    • pp.29.1-29.1
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    • 2009
  • Fabrication of good quality P-type GaN remained as a challenge for many years which hindered the III-V nitrides from yielding visible light emitting devices. Firstly Amano et al succeeded in obtaining P-type GaN films using Mg doping and post Low Energy Electron Beam Irradiation (LEEBI) treatment. However only few region of the P-GaN was activated by LEEBI treatment. Later Nakamura et al succeeded in producing good quality P-GaN by thermal annealing method in which the as deposited P-GaN samples were annealed in N2 ambient at temperatures above $600^{\circ}C$. The carrier concentration of N type and P-type GaN differs by one order which have a major effect in AlGaN based deep UV-LED fabrication. So increasing the P-type GaN concentration becomes necessary. In this study we have proposed a novel method of activating P-type GaN by electrochemical potentiostatic method. Hydrogen bond in the Mg-H complexes of the P-type GaN is removed by electrochemical reaction using KOH solution as an electrolyte solution. Full structure LED sample grown by MOCVD serves as anode and platinum electrode serves as cathode. Experiments are performed by varying KOH concentration, process time and applied voltage. Secondary Ion Mass Spectroscopy (SIMS) analysis is performed to determine the hydrogen concentration in the P-GaN sample activated by annealing and electrochemical method. Results suggest that the hydrogen concentration is lesser in P-GaN sample activated by electrochemical method than conventional annealing method. The output power of the LED is also enhanced for full structure samples with electrochemical activated P-GaN. Thus we propose an efficient method for P-GaN activation by electrochemical reaction. 30% improvement in light output is obtained by electrochemical activation method.

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Unusual Facilitated Olefin Transport through Polymethacrylate/Silver Salt Complexes

  • Kim, Jong-Hak;Joo, Seung-Hwan;Kim, Chang-Kon;Kang, Yong-Soo;Jongok Won
    • Macromolecular Research
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    • 제11권5호
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    • pp.375-381
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    • 2003
  • Silver salt complex membranes with glassy poly(methyl methacrylate) (PMMA) unexpectedly showed higher propylene permeance than those with rubbery poly(butyl methacrylate) (PBMA) where as neat PMMA is much less permeable to propylene than that of neat PBMA. Such unusual facilitated olefin transport has been systematically investigated by changing the side chain length of polymethacrylates (PMAs) from methyl, ethyl to butyl. The ab initio calculation showed almost the same electron densities of the carbonyl oxygens in the three PMAs, expecting very similar intensity of the interaction between carbonyl oxygen and silver ion. However, the interaction intensity decreases with the length of the alkyl side chain: PMMA > PEMA > PBMA according to wide angle X-ray scattering and FT-Raman spectroscopy. The difference in the interaction intensity may arise from the difference in the hydrophilicity of the three PMAs, as confirmed by the contact angle of water, which determines the concentrations of the ionic constituents of silver salts: free ion, contact ion pair and higher order ionic aggregate. However, propylene solubilities and facilitated propylene transport vary with the side chain length significantly even at the same concentration of the free ion, the most active olefin carrier, suggesting possible difference in the prohibition of the molecular access of propylene to silver ion by the side chains: the steric hindrance. Therefore, it may be concluded that both the hydrophilicity and the steric hindrance associated with the side chain length in the three PMAs are of pivotal importance in determining facilitated olefin transport through polymer/silver salt complex membranes.

Chondrogenic Differentiation of Bone Marrow Stromal Cells in Transforming Growth $Factor-{\beta}_{1}$ Loaded Alginate Bead

  • Park, Ki-Suk;Jin Chae-Moon;Kim, Soon-Hee;Rhee John M.;Khang Gil-Son;Han, Chang-Whan;Yang, Yoon-Sun;Kim, Moon-Suk;Lee, Hai-Bang
    • Macromolecular Research
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    • 제13권4호
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    • pp.285-292
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    • 2005
  • We developed alginate beads loaded with transforming growth $factor-{\beta}_{1}(TGF-{\beta}_{1})$ to examine the possible application of the scaffold and cytokine carrier in tissue engineering. In this study, bone marrow stromal cells (BMSCs) and $TGF{\beta}_{1}$ were uniformly encapsulated in the alginate beads and then cultured in vitro. The cell morphology and shape of the alginate beads were observed using inverted microscope, scanning electron microscope (SEM), histological staining and RT-PCR to confirm chondrogenic differentiation. The amount of the $TGF{\beta}_{1}$ released from the $TGF-{\beta}_{1}$ loaded alginate beads was analyzed for 28 days in vitro in a phosphate buffered saline (pH 7.4) at $37^{\circ}C$. We observed the release profile of $TGF-{\beta}_{1}$ from $TGF-{\beta}_{1}$ loaded alginate beads with a sustained release pattern for 35 days. Microscopic observation showed the open cell pore structure and abundant cells with a round morphology in the alginate beads. In addition, histology and RT-PCR results revealed the evidence of chondrogenic differentiation in the beads. In conclusion, these results confirmed that $TGF-{\beta}_{1}$ loaded alginate beads provide excellent conditions for chondrogenic differentiation.

Wireless Communication at 310 GHz using GaAs High-Electron-Mobility Transistors for Detection

  • Blin, Stephane;Tohme, Lucie;Coquillat, Dominique;Horiguchi, Shogo;Minamikata, Yusuke;Hisatake, Shintaro;Nouvel, Philippe;Cohen, Thomas;Penarier, Annick;Cano, Fabrice;Varani, Luca;Knap, Wojciech;Nagatsuma, Tadao
    • Journal of Communications and Networks
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    • 제15권6호
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    • pp.559-568
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    • 2013
  • We report on the first error-free terahertz (THz) wireless communication at 0.310 THz for data rates up to 8.2 Gbps using a 18-GHz-bandwidth GaAs/AlGaAs field-effect transistor as a detector. This result demonstrates that low-cost commercially-available plasma-wave transistors whose cut-off frequency is far below THz frequencies can be employed in THz communication. Wireless communication over 50 cm is presented at 1.4 Gbps using a uni-travelling-carrier photodiode as a source. Transistor integration is detailed, as it is essential to avoid any deleterious signals that would prevent successful communication. We observed an improvement of the bit error rate with increasing input THz power, followed by a degradation at high input power. Such a degradation appears at lower powers if the photodiode bias is smaller. Higher-data-rate communication is demonstrated using a frequency-multiplied source thanks to higher output power. Bit-error-rate measurements at data rates up to 10 Gbps are performed for different input THz powers. As expected, bit error rates degrade as data rate increases. However, degraded communication is observed at some specific data rates. This effect is probably due to deleterious cavity effects and/or impedance mismatches. Using such a system, realtime uncompressed high-definition video signal is successfully and robustly transmitted.

Robustness Examination of Tracking Performance in the Presence of Ionospheric Scintillation Using Software GPS/SBAS Receiver

  • Kondo, Shun-Ichiro;Kubo, Nobuaki;Yasuda, Akio
    • 한국항해항만학회:학술대회논문집
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    • 한국항해항만학회 2006년도 International Symposium on GPS/GNSS Vol.2
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    • pp.235-240
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    • 2006
  • Ionospheric scintillation induces a rapid change in the amplitude and phase of radio wave signals. This is due to irregularities of electron density in the F-region of the ionosphere. It reduces the accuracy of both pseudorange and carrier phase measurements in GPS/satellite based Augmentation system (SBAS) receivers, and can cause loss of lock on the satellite signal. Scintillation is not as strong at mid-latitude regions such that positioning is not affected as much. Severe effects of scintillation occur mainly in a band approximately 20 degrees on either side of the magnetic equator and sometimes in the polar and auroral regions. Most scintillation occurs for a few hours after sunset during the peak years of the solar cycle. This paper focuses on estimation of the effects of ionospheric scintillation on GPS and SBAS signals using a software receiver. Software receivers have the advantage of flexibility over conventional receivers in examining performance. PC based receivers are especially effective in studying errors such as multipath and ionospheric scintillation. This is because it is possible to analyze IF signal data stored in host PC by the various processing algorithms. A L1 C/A software GPS receiver was developed consisting of a RF front-end module and a signal processing program on the PC. The RF front-end module consists of a down converter and a general purpose device for acquiring data. The signal processing program written in MATLAB implements signal acquisition, tracking, and pseudorange measurements. The receiver achieves standalone positioning with accuracy between 5 and 10 meters in 2drms. Typical phase locked loop (PLL) designs of GPS/SBAS receivers enable them to handle moderate amounts of scintillation. So the effects of ionospheric scintillation was estimated on the performance of GPS L1 C/A and SBAS receivers in terms of degradation of PLL accuracy considering the effect of various noise sources such as thermal noise jitter, ionospheric phase jitter and dynamic stress error.

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Ga 함유량에 따른 Co-evaporation 방법에 의해 제조된 Cu(In1-x,Gax)Se2 박막 태양전지의 구조 및 전기적 특성 (Structural and Electrical Properties of Co-evaporated Cu(In1-x,Gax)Se2 Thin Film Solar Cells with Varied Ga Content)

  • 임종엽;이용구;박종범;김민영;양계준;임동건
    • 한국전기전자재료학회논문지
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    • 제24권9호
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    • pp.755-759
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    • 2011
  • $Cu(In_{1-x},Ga_x)Se_2$ thin films have been considered as an effective absorber material for high efficient solar cells. In this paper, the CIGS thin films with varied Ga content were prepared using a co-evaporation process of three stage. We carry out structure and electrical optical property on the thin film in varied Ga content. CIGS thin films have been characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM), energy-dispersive spectroscopy(EDS), four-point probe measurement, and the Hall measurement. To optimize Ga contents, Ga/(In+Ga) ratio were changed from 0.13 to 0.72. At this time the carrier concentrations were varied from $1.22{\times}10^{11}\;cm^{-3}$ to $5.07{\times}10^{16}\;cm^{-3}$, and electrical resistivity were varied from $1.11{\times}10^0\;{\Omega}-cm$ to $1.08{\times}10^2\;{\Omega}-cm$. A strong <220/204> orientation and a lager grain size were obtained at a Ga/(In+Ga) of 0.3. We were able to achieve conversion efficiency as high as 15.95% with a Ga/(In+Ga) of 0.3.

Azotobacter vinelandii Shethna Flavoprotein 의 Free Radical 생성(生成)을 위(爲)한 전자전달물질(電子傳達物質)- (Electron Transport Carrier for the Free Radical Shethna Flavoprotein in Azotobacter vinelandii)

  • 전재근;골드 토-린
    • Applied Biological Chemistry
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    • 제16권1호
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    • pp.31-40
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    • 1973
  • Azotobacter vinelandi의 세포추출물(細胞抽出物)들이 Shethna flavoprotein의 free radical 형(型)으로의 전자전달기구(電子傳達機構)에 관하여 연구(硏究)하였다. 전자전달(電子傳達)에 관여도(關與度)가 높은 단백질(蛋白質)로 황색형광성단백질(黃色榮光性蛋白質)(protein I)과 갈색단백질(褐色蛋白質)(protein II)을 정제(精製)하였고 이들은 $N_2$ 기압하(氣壓下) 또는 aceton-dry ice 동결(凍結)저장하에서도 쉽게 실활(失活)되었고 반응속도(反應速度) 역시 너무 완만하여 생체내반응(生體內反應)이기에는 의문점을 보였다. 한편 세포추출물중(細胞抽出物中)의 FMN은 NADH에 의(依)하여 환원이 쉽게 이루어졌으며, 환원형 $FMNH_2$는 비효소적(非酵素的)으로 Shethna flavoprotein 의 free radical 을 형성(形成)시켰으며 , 효소적반응속도(酵素的反應速度)보다 15배(倍)의 높은 반응속도(反應速度)를 보였다. 비록 FMN이 생체내(生體內)에서 타(他)단백질과 비결합형(非結合型)으로 존재(存在)하지 않는다해도 FMN의 전자전달체(電子電達體)의 가능성(可能性)을 제시(提示)하였다.

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SiGe/Si 이종접합구조의 채널을 이용한 SOI n-MOSFET의 DC 특성 (DC Characteristic of Silicon-on-Insulator n-MOSFET with SiGe/Si Heterostructure Channel)

  • 최아람;최상식;양현덕;김상훈;이상흥;심규환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.99-100
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    • 2006
  • Silicon-on-insulator(SOI) MOSFET with SiGe/Si heterostructure channel is an attractive device due to its potent use for relaxing several limits of CMOS scaling, as well as because of high electron and hole mobility and low power dissipation operation and compatibility with Si CMOS standard processing. SOI technology is known as a possible solution for the problems of premature drain breakdown, hot carrier effects, and threshold voltage roll-off issues in sub-deca nano-scale devices. For the forthcoming generations, the combination of SiGe heterostructures and SOI can be the optimum structure, so that we have developed SOI n-MOSFETs with SiGe/Si heterostructure channel grown by reduced pressure chemical vapor deposition. The SOI n-MOSFETs with a SiGe/Si heterostructure are presented and their DC characteristics are discussed in terms of device structure and fabrication technology.

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Al의 열산화 방법을 이용한 AlGaN/GaN 구조의 표면 Al2O3 패시베이션 효과 (Effect of Al2O3 Surface Passivation by Thermal Oxidation of Aluminum for AlGaN/GaN Structure)

  • 김정진;안호균;배성범;박영락;임종원;문재경;고상춘;심규환;양전욱
    • 한국전기전자재료학회논문지
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    • 제25권11호
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    • pp.862-866
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    • 2012
  • Surface passivation of AlGaN/GaN heterojunction structure was examined through the thermal oxidation of evaporated Al. The Al-oxide passivation increased channel conductance of two dimensional electron gas (2DEG) on the AlGaN/GaN interface. The sheet resistance of 463 ohm/${\Box}$ for 2DEG channel before $Al_2O_3$ passivation was decreased to 417 ohm/${\Box}$ after passivation. The oxidation of Al induces tensile stress to the AlGaN/GaN structure and the stress seemed to enhance the sheet carrier density of the 2DEG channel. In addition, the $Al_2O_3$ films formed by thermal oxidation of Al suppressed thermal deterioration by the high temperature annealing.

이식형 단백질 전달체로서 메톡시 폴리(에틸렌 글리콜)/폴리카프로락톤 블록 공중합체의 합성 및 알부민의 방출 거동 (Synthesis of Methoxy Poly(ethylene glycol)-b-poly($\varepsilon$-caprolactone) Diblock Copolymers and Release Behavior of Albumin for Implantable Protein Carriers)

  • 서광수;전세강;김문석;조선행;이해방;강길선
    • 폴리머
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    • 제28권3호
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    • pp.232-238
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    • 2004
  • 약물 전달체로서 메톡시 폴리(에틸렌 글리콜) (MPEG, methoxypolyethylene glycol)과 생분해성 폴리에스테르 계열의 카프로탁톤 ($\varepsilon$-CL, $\varepsilon$-caprolactone)으로 구성된 MPEG-PCL 블록 공중합체를 개환중합을 통해 합성하였다. MPEG-PCL의 결정성과 열적특성은 X선 굴절계와 시사주차열량계를 통하여 분석하였다 모델 단백질로서 알부민 (FITC-BSA, albumin bovine-fluorescein isothiocyanate)과 블록 공중합체를 동결 제분 후, 직접압축 성형방법에 의해 웨이퍼를 제조하였다. 알부민의 방출은 pH 7.4 인산염완충액을 사용하여 37$^{\circ}C$에서 14일 동안 관찰하였다. 알부민의 방출양은 형광분광기를 통하여 FITC의 강도에 의해 결정되었다. 웨이퍼의 형태학적 관찰은 디지털 카메라와 전자주사현미경을 통하여 관찰하였다. 알부민의 방출 속도와 초기 burst는 MPEG-PCL 블록 공중합체의 분절 내에서 폴리(에틸렌 글리롤)의 분자량이 증가할수록 또한 폴리카프로락톤의 분자량이 감소할수록 많은 초기방출과 단축된 방출기간을 보였다.