• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.8
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• pp.48-56
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• 2000

Effects of the correlated random fluctuation in each grating half-period have been studied by an effective index transfer matrix method in quarter wavelength shifted DFB lasers. As the correlation coefficient changes from 0 to -1, single mode stability and wavelength accuracy are less degraded by the reduced error in the grating period. This fact shows that holographic grating fabrication is better than electron-beam lithography in discrete device fabrication provided that the magnitude of the random fluctuation is the same.

• Advances in nano research
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• v.1 no.2
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• pp.105-109
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• 2013

We report dry thermal development of negative resist polystyrene with low molecular weight. When developed on a hotplate at $350^{\circ}C$ for 30 min, polystyrene showed reasonable high contrast and resolution (30 nm half-pitch), but low sensitivity. Resist sensitivity was greatly improved at lower development temperatures, though at the cost of reduced contrast. In addition, we observed the thickness reduction due to thermal development was higher for larger remaining film thickness, implying the thermal development process is not just a surface process and the more volatile chains below the top surface may diffuse to the surface and get evaporated.

• Journal of Welding and Joining
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• v.21 no.4
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• pp.63-68
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• 2003

Scanning electron microscopy (SEM) has been used as a surface measurement instrument and a tool for lithography in semiconductor process due to its high density localized beam. For those purposes, however, the maximum current of SEM Is less than 100pA, which is not enough fo material processing. In this paper SEM was modified to increase the amount of current reaching a specimen from gun part where current is generated, the possibility of applying SEM to material processing, especially microjoining, was investigated. The maximum current of SEM after modifications was measured up to 10$\mu$A, which is about 10$^{5}$ times greater than before modifications. Through experiments such as eutectic solder wetting on thin 304 stainless steel foil and microjoining of 10$\mu$m thick 304 stainless steel, the intensity of electron beam of SEM proved to be great enough fur material processing as heat source. And a tight jig system was found necessary to hold materials close enough fur successful microloining.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.44-47
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• 2004

단일 나노선 연구에 있어서 나노선에 원하는 패턴을 선택적으로 구현하는 새로운 방법을 소개한다. 기존에 많이 쓰였던 SEM(Scanning Electron Microscope) 사진을 통한 나노선의 위치를 찾는 방법은 전자빔에 의해 유도되는 비결정성 탄소입자 등으로 인해 측정하고자하는 나노선의 전기적 특성을 왜곡시킬 수 있다. 이러한 점을 예방하고 작업의 편리성을 위하여 ER(E-beam Resist)이 코팅된 상태에서 바로 SEM을 이용해 패터닝하는 방법을 고안하였다. 또 다른 방법으로 기존의 AFM(Atomic Force Microscope) 사진으로 위치를 찾는 방식의 단점인 긴 작업시간을 개선하기 위해 광학현미경 사진을 이용해 패터닝하는 방법을 고안하였다. 이러한 방법들은 작업의 편리성이나 패턴의 정확도면에서 서로 보완적인 성격을 가지고 있어 필요에 따라 방법을 선택할 수 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.393-393
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• 2012

Optically active nanostructures such as subwavelength moth-eye antireflective structures or surface enhanced Raman spectroscopy (SERS) active structures have been demonstrated to provide the effective suppression of unwanted reflections as in subwavelength structure (SWS) or effective enhancement of selective signals as in SERS. While various nanopatterning techniques such as photolithography, electron-beam lithography, wafer level nanoimprinting lithography, and interference lithography can be employed to fabricate these nanostructures, roll-to-roll (R2R) nanoimprinting is gaining interests due to its low cost, continuous, and scalable process. R2R nanoimprinting requires a master to produce a stamp that can be wrapped around a quartz roller for repeated nanoimprinting process. Among many possibilities, two different types of mask can be employed to fabricate optically active nanostructures. One is self-assembled Au nanoparticles on Si substrate by depositing Au film with sputtering followed by annealing process. The other is monolayer silica particles dissolved in ethanol spread on the wafer by spin-coating method. The process is optimized by considering the density of Au and silica nano particles, depth and shape of the patterns. The depth of the pattern can be controlled with dry etch process using reactive ion etching (RIE) with the mixture of SF6 and CHF3. The resultant nanostructures are characterized for their reflectance using UV-Vis-NIR spectrophotometer (Agilent technology, Cary 5000) and for surface morphology using scanning electron microscope (SEM, JEOL JSM-7100F). Once optimized, these optically active nanostructures can be used to replicate with roll-to-roll process or soft lithography for various applications including displays, solar cells, and biosensors.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.633-636
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• 1998

In this study, power AlGaAs/InGaAs/GaAs PM-HEMT's for mm wave's were fabricated using Electron beam lithography and air-bridge techniques, and so on. DC and AC characteristics of the fabricated power PM-HEMTs were measured under the various bias conditions. For example, DC and RF characteristics such as S21 gain of 3.6 dB at 35 ㎓, current gain cut-off frequencies of 45 ㎓ and maximum oscillation frequencies of 100 ㎓ were carefully analyzed for design methodology of sub-mm wave power devices.

• Proceedings of the Korean Magnestics Society Conference
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• 2009.12a
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• pp.113-113
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• 2009

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.268-269
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• 2000

We demonstrate a polarization insensitive waveguide filter using quantum well intermixing(QWI). The bandgap of epitaxial layer is modified from 1.55${\mu}{\textrm}{m}$ to 1.40${\mu}{\textrm}{m}$ using QWI and a Bragg grating filter is demonstrated using electron beam lithography technology. The fabricated waveguide filter has a 70% reflection efficiency and a 1.46nm filter bandwidth. Furthermore polarization insensitive transmission characteristics are observed. The device can be applied to photonic integrated circuits(PIC).

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.05a
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• pp.13-13
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• 2004

나노테크놀러지 중의 한 가지인 나노임프린트 리소그래피 기술은 수 ∼ 수십 나노 급의 선폭을 가지는 스탬프(stamp)를 전자빔 리소그래피(electron beam lithography)를 이용하여 제작한 후 스탬프에 형성된 패턴과 동일한 형상을 원하는 곳에 모사하는 기술이다. 이 기술은 크게 열을 가하는 방식과 UV 경화성 수지를 이용한 방식으로 나뉜다. 열을 가하는 나노임프린트 리소그래피 방식의 경우는 열 경화성 수지를 이용하여 고온 조건에서 스탬프를 고압으로 눌러 원래의 형상을 모사하며, UV 나노임프린트는 광경화 반응을 이용하여 수지를 경화 시켜 모사하는 차이점이 있다.(중략)

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.212-212
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• 2013

본 연구에서는 최근 다양한 전자 소자로써의 연구가 진행되고 있는 그라핀을 실리콘 기판위에 전자빔 식각(Electron-Beam Lithography)을 이용하여 TLM (Transfer Length Method) 패턴을 형성하고 가스 유입이 가능한 진공 챔버를 가지는 Probe Station을 이용하여 I-V 변화를 측정함으로써, 그라핀을 가스 센서 소자로서의 가능성을 연구하였다. 우리는 기존의 광식각을 이용한 TLM 패턴 형성과 더불어 전자빔 식각(E-Beam Lithography: EBL)을 이용한 TLM 패턴을 형성하여 I-V를 측정하였는데, 전자빔을 이용한 TLM 패턴의 형성은 광식각을 이용한 방법에 비해 더 세밀하고 미세한 패턴을 형성하는 것이 가능하다. 이렇게 형성된 그라핀의 TLM패턴은 가스 유량 조절이 가능한 진공 챔버를 가지는 Probe Station을 이용하여 측정하게 되는데, 이 때 저진공 상태의 챔버 내로 N2, H2 두 종류의 가스를 각각 유량을 변화시키며 주입하고 그 변화를 측정하였다. 유입된 가스는 그라핀의 Dangling Bond에 결합됨으로써 그라핀의 전도도를 변화시키게 되고, 변화된 그라핀의 전도도에 따른 I-V 결과의 변화를 측정하여 이를 가스 센서로 사용할 수 있는지를 측정하였다. 또한 유입되는 가스의 유량 변화에 따른 I-V 결과의 변화량을 통하여 가스 센서의 민감도 또한 측정하였다.