• Title/Summary/Keyword: Electron Probe

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Simple and Ultrasensitive Chemically Amplified Electrochemical Detection of Ferrocenemethanol on 4-Nitrophenyl Grafted Glassy Carbon Electrode

  • Koh, Ahyeon;Lee, Junghyun;Song, Jieun;Shin, Woonsup
    • Journal of Electrochemical Science and Technology
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    • v.7 no.4
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    • pp.286-292
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    • 2016
  • Chemically amplified electrochemical detection, redox-active probe being amplified its electrochemical anodic current by a sacrificial electron donor presenting in solution, holds great potential for simple and quantitative bioanalytical analysis. Herein, we report the chemically amplified electrochemical analysis that drastically enhanced a detection of ferrocenemethanol (analyte) by ferrocyanide (chemical amplifier) on 4-nitrophenyl grafted glassy carbon electrodes at $60^{\circ}C$. The glassy carbon electrode grafted with a 4-nitrophenyl group using an electrochemical reduction suppressed the oxidation of ferrocyanide and thus enabled detection of ferrocenemethanol with excellent selectivity. The ferrocenemethanol was detected down to an nM range using a linear sweep voltammetry under kinetically optimized conditions. The detection limit was improved by decreasing the concentration of the ferrocyanide and increasing temperature.

EFFECT OF METAL CONTACT ON THE CZT DETECTOR PERFORMANCE

  • Park, Se-Hwan;Park, Hyung-Sik;Lee, Jae-Hyung;Kin, Han-Soo;Ha, Jang-Ho
    • Journal of Radiation Protection and Research
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    • v.34 no.2
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    • pp.65-68
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    • 2009
  • Metal-semiconductor contact is very important for the operating property of semiconductor detector. $Cd_{0.96}$ $Zn_{0.04}$ Te semiconductor crystal was grown with Bridgman method, and the crystal was cut and polished. EPMA (Electron Probe Micro Analyzer) and ICP-MS (Inductively Coupled Plasma Mass Spectrometry) analysis were done to obtain the chemical composition and impurity of the crystal. Metal contact was deposited with thermal evaporator on both sides of the crystal. Detectors with Au/CZT/Au and In/CZT/Au structure were made, and I-V curve and the energy spectrum were measured with the detectors. It could be seen that the detector with the In/CZT/Au structure has superior property than the detector with Au/CZT/Au structure when the crystal resistivity was low. However, the metal contact structure effect becomes low when the crystal resistivity was high.

Properties of ITO thin film's aging change prepared on the various substrate (다양한 기판에 제작한 ITO 박막의 실온 특성 변화)

  • Kim, Sang-Mo;Rim, You-Seung;Son, In-Hwan;Kim, Kyung-Hwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.403-404
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    • 2008
  • In this study, we prepared ITO thin film on glass, polycarbonate (PC) and polyethersulfone (PES) substrate in Facing Targets sputtering (FTS) system. Properties of as-deposited thin films's aging change were investigated as a function of time placed in the air. The electrical and optical properties of as-deposited thin films were employed by a four point probe and an UV/VIS spectrometer, an X-ray diffractometer (XRD), a Field Emission Scanning Electron Microscope(FESEM) and a Hall Effect measurement. As a result, as time went by, transmittance of all films did not change but resistivity of films was decreasing.

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Properties of AZO Thin Film deposited on the PES Substrate (PES 기판상에 증착된 AZO 박막의 특성)

  • Kim, Sang-Mo;Kim, Kyung-Hwan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.12
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    • pp.1072-1076
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    • 2007
  • We prepared the Al doped ZnO (AZO) thin film on polyethersulfon (PES) without any substrate heating by Facing Targets Sputtering (FTS) system. FTS system has two different facing targets. One is ZnO doped the content of Al 2 wt% and the other is Zn in order to decrease resistivity. The electrical, structural and optical properties of AZO thin films were investigated. To evaluate the as-deposited thin film properties, we employed four-point probe (CMT-R100nw, Changmin), Surface profiler (Alpha-step, Tencor), UV/VIS spectrometer (HP), X-ray diffractometer (XRD, Rigaku) and Field Emission Scanning Electron Microscopy (FESEM, Hitachi S-4700). As a result, We obtained that AZO thin film deposited on PES substrate at a DC Power of 150 W, working pressure of 1 mTorr and $O_2$ gas flow ratio of 0.2 exhibited the resistivity of $4.2{\times}10^{-4}\;[{\Omega}cm]$ and the optical transmittance of about 85 % in the visible range.

Evaluation of Failure Mechanism of Flexible CIGS Solar Cell Exposed to High Temperature and Humid Atmosphere (플렉서블 CIGS 태양전지의 고온고습 환경 고장 기구 분석)

  • Kim, Hyeok-Soo;Byeon, Jai-Won
    • Journal of Applied Reliability
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    • v.16 no.1
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    • pp.41-47
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    • 2016
  • Purpose: The purpose of this study was to evaluate electrical and structural degradation of flexible CIGS sollar cell exposed to high temperature and humid atmosphere. Method: Accelerated degradation was performed for various time under $85^{\circ}C/85%RH$ and then electrical and structural properties were analyzed by 4-point probe method, scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and X-ray diffraction (XRD). Results: Sheet resistance of the top ITO layer increased with exposure time to the high temperature and humid atmosphere. Blunting of the protrusion morphology of ITO layer was observed for the degraded specimen, while no phase change was detected by XRD. Oxygen was detected at the edge area after 300 hours of exposure. Conclusion: Increase in electrical resistance of the degraded CIGS solar cell under high temperature and humid environment was attribute to the oxygen or water absorption.

ABUNDANCES OF PLANETARY NEBULAE IN M 31 AND M 32

  • HYUNG SIEK;ALLER LAWRENCE H.;HAN SOO-RYEON;KIM YOUNG-KWANG;HAN WONYONG;CHOI YOUNGJUN
    • Journal of The Korean Astronomical Society
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    • v.33 no.2
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    • pp.97-110
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    • 2000
  • Planetary nebulae provide a direct way to probe elemental abundances, their distributions and their gradients in populations in nearby galaxies. We investigate bulge planetary nebulae in M 31 and M 32 using the strong emission lines, H$\alpha$, He I, [O III], [N II], [S II] and [Ne III]. From the [O III] 4363/5007 line ratio and the [O II] 3727/3729, we determine the electron temperatures and number densities. With a standard modeling procedure (Hyung, 1994), we fit the line intensities and diagnostic temperatures, and as a result, we derive the chemical abundances of individual planetary nebulae in M 31 and M 32. The derived chemical abundances are compared with those of the well-known Galactic planetary nebulae or the Sun. The chemical abundances of M 32 appear to be less enhanced compared to the Galaxy or M 31.

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Characterization of ECR Plasma by Using Ion Analyzer and Its Silicon Etching (이온 분석기에 의한 ECR 플라즈마의 특성 분석 및 실리콘 식각에 관한 연구)

  • 이석현;이호준;황기웅
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.41 no.5
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    • pp.492-501
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    • 1992
  • In this paper, an ion analyzer is used in conjunction with a Langmuir probe to study the chracteristics of ECR plasma such as the ion temperature, ion current density and electron temperature as the operating pressure, ${\mu}$-wave power and axial position change, Silicon etching has been performed with RF-biasing and its etching chracteristics have been discussed in terms of the ion energy distribution function. The maximum value of ion current density appears in the range of 10S0-3T mbar and the broadening of ion energy distribution function increases as pressure increases. Therefore, as pressure decreases, anisotropy increases but selectivity to photoresist decreases.

Laser dissect writing from copper(II) formate using Ar+ laser (아르곤 이온 레이저를 이용한 CU의 직접 쓰기 기술)

  • Lee, Hong-Kyu;Lee, Cheon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.663-666
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    • 2000
  • Laser direct writing of micro-patterned copper lines has been achieved by pyrolytic decomposition of copper formate films (Cu(HCOO)$_2$$.$4H$_2$O), as a precursor, using a focused Ar$\^$+/ laser beam ($\lambda$= 514 nm) on PCB boards and glass substrates. The linewidth and thickness of the lines were investigated as a function of laser power and scan speed. The profiles of the lines were measured by scanning electron microscope (SEM), surface profiler (${\alpha}$-step) and atomic force microscopy (AFM). The electrical resistivities of the patterned lines were also investigated as a function of laser parameter using probe station and semiconductor analyzer. we compared resistivities of the patterned lines with that of the Cu bulk, respectively.

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RF Plasma Nitriding of AISI 304 Stainless Steel

  • Kim, Sun-Kyu;Yoo, Jung-Sik;Matthew P. Fewell
    • Journal of Surface Science and Engineering
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    • v.37 no.1
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    • pp.53-57
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    • 2004
  • Austenitic stainless steel AISI 304 was nitrided in a low-pressure RF plasma using pure nitrogen. With a treatment of time of 4.0h at $400^{\circ}C$, the nitrogen-rich layer on the sample was $3\mu\textrm{m}$thick and had a hardness of approximately 4.4 times higher than that of untreated material. XRD data showed that as the process temperature rose from 350∼$450^{\circ}C$, the expanded austenite peaks became more prominent while the austenite peaks became weaker. Expanded austenite was transformed to ferrite and CrN at the treatment of$ 500^{\circ}C$. Langmuir probe measurements showed that electron density decreased above $450^{\circ}C$.