• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1010-1013
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• 2001

Zinc oxide(ZnO) films were prepared by ultrasonic spray pyrolysis on indium (In) films deposited by evaporation and subsequently submitted to rapid thermal annealing (RTA). The RTA was processed in air or a vacuum ambient. The crystallographic properties and surface morphologies of the films were characterized before and after the RTA by X-ray diffraction (XRD) and scanning electron microscopy(SEM), respectively. The resistivity variation of the films with RTA temperature and time was measured by the 4-point probe method. Auger electron spectroscopy(AES) was carried out to figure out the distribution of indium atoms in the ZnO films. The resistivity of the ZnO on In(ZnO/In) films decreased to 2${\times}$10$\^$-3/ $\Omega$cm by diffusion of the In. The In diffusion into the ZnO films roughened the surface of the ZnO films. The results of depth profile by AES showed a hump of In atoms around ZnO/In interface after the RTA at 800$^{\circ}C$, which disappeared by the RTA at 1000$^{\circ}C$. The effects of temperature, time and ambient during the RTA on the structural and electrical properties of the ZnO/In films were discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.828-834
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• 2001

Zinc oxide (ZnO) films deposited on indium (In) films were post-annealed in a rapid thermal anealing (RTA) system. The ZnO/In films were RTA-treated in air or a vacuum ambient. The crystallographic properties and surface morphologies of the films were studied before and after the RTA by X-ray diffraction(XRD) and scanning electron microscopy (SEM), respectively. The resistivity variation of the films with RTA temperature and time was measured by the 4-point probe method. Auger electron spectroscopy (AES) was carried out to figure out the redistribution of indium atoms in the ZnO films. The resistivity of the ZnO/In films decreased to 2$\times$10$\^$-3/ Ωcm by diffusion of the In. The In diffusion into the ZnO films roughened the surface of ZnO films. The results of depth profile by AES showed a hump of In atoms around ZnO/In interface after the RTA at 800 $\^{C}$. The effects of temperature time and ambient during the RTA on the structural and electrical properties of the ZnO/In films were discussed.

• Journal of the Semiconductor & Display Technology
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• v.2 no.3
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• pp.19-23
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• 2003

Extended unbalanced magnetron sputtering system based on the cylindrical magnetron with a rotating cathode was developed. The unbalanced configuration of magnetic field was realized by means of additional lines of permanent magnets, placed along both sides of a 89 mm outer diameter and 600 mm long cylindrical cathode. The performance of the unbalanced magnetron was assessed in terms of the ion current density and the ion-to-atom ratio incident at the substrate. Furthermore, the paper presents the comparison of the internal plasma parameters, such as the electron temperature, electron density, plasma and floating potentials, measured by a Langmuir probe in various positions from the cathode, for conventional and unbalanced constructions of the cylindrical magnetron. The plasma density and ion current density are about 3-5 times higher than those of conventional one, in the unbalanced magnetron in a 0.24 Pa Ar atmosphere with a DC cathode power of 3 kW.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.375-378
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• 2002

We investigated the reduction of etching damage by additive O$_2$ in etching gas and recovery of etching damage by O$_2$ annealing. The PZT thin films were etched using additive Ar or O$_2$ into Cl$_2$/CF$_4$ gas mixing ratio of 8/2. In order to recover ferroelectric properties of PZT thin films after etching, the etched PZT thin films were annealed at 600 C in O$_2$ atmosphere for 10 min. The remanent polarization is decreased seriously and fatigue is accelerated in the PZT sample etched in Ar/(C1$_2$+CF$_4$) plasma, whereas these characteristics are improved in O$_2$/(Cl$_2$/CF$_4$). From x-ray photoelectron spectroscopy (XPS) analysis, the intensities of Pb-O, Zr-O and Ti-O peaks are changed and the etch byproducts such as metal chloride and metal fluoride are reduced by O$_2$ annealing. From electron probe micro analyzer (EPMA) and auger electron spectroscopy(AES), O$_2$ vacancy is observed after etching. In x-ray diffraction (XRD), the structure damage in the additive O$_2$ into C1$_2$/CF$_4$ is reduced and the improvement of ferroelectric behavioral annealed sample is consistent with the increase of the (100) and (200) PZT peaks.

• Proceedings of the KWS Conference
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• 2006.05a
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• pp.266-268
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• 2006

The effects of the brazing temperature and homogenizing time for brazed specimens on the joint of Ni-based superalloys such as Haynes 250, Inconel 617 and Hastelloy-X were investigated. The brazing alloy is nickel base MBF 15. The foil had a thickness of $38{\mu}m$, which was used two sheets of that for the all experiments. The experimental brazing was carried out by a brazing process in a vacuum of approximately $2{\times}10^{-5}$ Torr, an applied pressure of about 0.74MPa and the three kinds of brazing temperatures were 1100, 1150, and $1190^{\circ}C$ for a holding time of 5 to 1440 minutes. Microstructural observations were made on the cross-sectional samples by using an optical microscope(OM), scanning electron microscope(SEM), and electron probe X-ray microanalyzer(EPMA). The tensile tests were performed at room temperature with a cross head speed 1.5 mm/min according to ASTM E8M. The results show that excellent joint tensile strengths of as high as 788MPa were obtained when processed at $1190^{\circ}C$ for 5 minutes.

• Korean Journal of Veterinary Research
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• v.29 no.4
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• pp.541-548
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• 1989

The present study was carried out to determine viral antigens and its morphogenesis in the ultrathin frozen and araldite sections of cell cultures infected with ADV by protein A-gold labeling. ADV antigens were labeled with 10nm gold probes, and electron-dense gold particles were mainly present on viral nucleocapsids and viral envelopes. Immunogold labeling in the ultracryosections showed a very low degree of interaction with tissue structures. Immunogold labeling in the ultrathin cryosections can be useful tool for the detection of ADV antigens, and the technique also may provide its great potential for immunocytochemical studies on various virus-host cell Interactions.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.63-66
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• 2003

It is experimentally shown that a $TiO_2$ film on Si(111) substrate was prepared by using the technique of D.C. reaction sputter deposition with $Ar^{+}$ ion beam bombardment, and a layer-like structure was observed from the depth profile of the interface between $TiO_2$ film and Si substrate with Scanning Electron Microscopy and Electron Probe. It was also surprisingly discovered that Ti atoms could be detected at about 9 $\mu$m depth. The $TiO_2$-Si interface bombarded by $Ar^{+}$ ion beams revealed multi-layer structures, a mechanism might be caused by defect diffusion, impurity and matrix relocation. Multi-relocations of impurity and matrix atoms were as a result of profile broadening of the $TiO_2$-Si interface, and the spread due to matrix relocation in this system is shown to exceed much more the spread due to impurity relocation.

• Carbon letters
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• v.13 no.4
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• pp.205-211
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• 2012

Methanol as a carbon source in chemical vapor deposition (CVD) graphene has an advantage over methane and hydrogen in that we can avoid optimizing an etching reagent condition. Since methanol itself can easily decompose into hydrocarbon and water (an etching reagent) at high temperatures [1], the pressure and the temperature of methanol are the only parameters we have to handle. In this study, synthetic conditions for highly crystalline and large area graphene have been optimized by adjusting pressure and temperature; the effect of each parameter was analyzed systematically by Raman, scanning electron microscope, transmission electron microscope, atomic force microscope, four-point-probe measurement, and UV-Vis. Defect density of graphene, represented by D/G ratio in Raman, decreased with increasing temperature and decreasing pressure; it negatively affected electrical conductivity. From our process and various analyses, methanol CVD growth for graphene has been found to be a safe, cheap, easy, and simple method to produce high quality, large area, and continuous graphene films.

• Journal of Technologic Dentistry
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• v.28 no.1
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• pp.19-26
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• 2006

The effect of Nb on interfacial bonding characteristics of Ni-Cr alloy for porcelain fused to metal crown (PFM) has been studied in order to investigate oxide layer. A specimens of Ni-Cr alloy, which is 0.8mm in thickness, within the porcelain furnace of 1,000$^{\circ}C$ with four tests such as air, vacuum, air for 5 minutes and vacuum for 5 minutes in order to examine an oxide behavior of alloy surface generated by the adding of Nb to be controlled at a rate of 0, 1, 3 and 5. Oxide film was observed form of the fired specimens with scanning electron microscope (SEM), and at the same time it measured Electron Probe Micro Analyzer (EPMA). The result of this study were as follows: 1. Cr oxide film and Nb oxide film were observed from the surface of specimen to be controlled at a rate of Nb 1%. 2. Nb oxide film was observed from the interface of specimens to be controlled at a rate of Nb 1% and 3%. 3. The stability of oxide films that treated in air were more stable than treated under vacuum.

• 한국지구과학회:학술대회논문집
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• 2006.02a
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• pp.111-115
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• 2006

최근 경기도 가평지역에서 새로운 철운석이 발견되었으며, 이는 한반도에 낙하(fall) 또는 발견(find)된 운석 중 다섯 번째 기록이다. 가평운석(가칭)은 북위 $37^{\circ}52'08'$, 동경$127^{\circ}27'54'$, 고도 147m 지점에서 발견되었으며, 운석의 분류상 철운석에 속한다. 가평운석의 표면은 지표상에서 풍화를 받은 흔적이 나타나나, 내부는 비드만스태튼 무늬(Widmanstatten pattern)와 같은 철운석의 특징이 잘 보존되어 있다. 가평운석의 암석학적, 광물학적 기재와 분류를 위해 주사전자현미경(Scanning Electron Microscope) 및 전자 현미분석기(electron probe micro-analyzer)를 이용했다. 풍화의 산물인 철산화물이 나타나는 최외각부를 제외하면 가평 운석은 거의 순수한 철-니켈 금속광물(Fe-Ni metal)로 이루어져 있다. 이 중 니켈 함량이 적은 카마사이트(kamacite)가 대부분이며 소량의 태나이트(taenite)가 산출되어 비드만스태튼 무늬를 구성한다. 비드만스태튼 무늬의 특징에 의한 분류에 따르면 가평운석은 중립질 또는 조립질 옥타헤드라이트(octahedrite)에 속한다. 철운석은 화학적으로 열 개 이상의 하부그룹으로 세분되며, 가평운석의 정확한 하부그룹으로의 분류는 친철원소에 대한 미량분석이 추가적으로 필요하다. 가평운석의 냉각률은 $^{\sim}1^{\circ}C/Ma$이하로 나타나며, 이는 가평운석이 천천히 냉각된 비교적 규모가 큰 소행성의 핵에서 유래했음을 지시한다.