• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.421-422
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• 2011

The first part is about development of a liquid target for a neutron source, which is designed to overcome many of the limitations of traditional beam-target neutron generators by utilizing a liquid target neutron source. One of the most critical aspects of the beam-target neutron generator is the target integrity under the beam exposure. A liquid target can be a good solution to overcome damage to the target such as target erosion and depletion of hydrogen isotopes in the active layer, especially for the one operating at high neutron fluxes with no need for water cooling. There is no inherent target lifetime for the liquid target neutron generator when used with continuous refreshment of the target surface exposed to the energetic beam. In this work, liquid target containing hydrogen has been developed and tested in vacuum environment. Potentially, liquid targets could allow a point neutron source whose spatial extension is on the order of 1 to $10{\mu}m$. And the second is about the vacuum ultraviolet (VUV) spectrometer which is designed as a five-channel spectral system for ITER main plasma measurement. To develop and verify the design, a two-channel prototype system was fabricated with No. 3 (14.4 nm~31.8 nm) and No. 4 (29.0 nm~60.0 nm) among the five channels. For test of the prototype system, a hollow cathode lamp is used as a light source. The system is composed of a collimating mirror to collect the light from source to slit, and two holographic diffraction gratings with toroidal geometry to diffract and also to collimate the light from the common slit to detectors. The two gratings are positioned at different optical distances and heights as designed. To study the appropriate detector for ITER VUV system, two different electronic detectors of the back-illuminated charge coupled device and the micro-channel plate electron multiplier were installed and the performance has been investigated and compared in the same experimental conditions. The overall system performance was verified by measuring the spectrums.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.1
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• pp.699-704
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• 2018

One-dimensional nanostructures have attracted increasing attention because of their unique electronic, optical, optoelectrical, and electrochemical properties on account of their large surface-to-volume ratio and quantum confinement effect. Vertically grown nanowires have a large surface-to-volume ratio. The vapor-liquid-solid (VLS) process has attracted considerable attention for its self-alignment capability during the growth of nanostructures. In this study, vertically aligned silicon oxide nano-pillars were grown on Si\$SiO_2$(300 nm)\Pt substrates using two-zone thermal chemical vapor deposition system via the VLS process. The morphology and crystallographic properties of the grown silicon oxide nano-pillars were investigated by field emission scanning electron microscopy and transmission electron microscopy. The diameter and length of the grown silicon oxide nano-pillars were found to be dependent on the catalyst films. The body of the silicon oxide nano-pillars exhibited an amorphous phase, which is consisted with Si and O. The head of the silicon oxide nano-pillars was a crystalline phase, which is consisted with Si, O, Pt, and Ti. The vertical alignment of the silicon oxide nano-pillars was attributed to the preferred crystalline orientation of the catalyst Pt/Ti alloy. The vertically aligned silicon oxide nano-pillars are expected to be applied as a functional nano-material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• Bulletin of the Korean Chemical Society
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• v.33 no.10
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• pp.3407-3412
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• 2012

The Ti incorporation at Fe-site in the double perovskite lattice of $Sr_2FeNbO_6$ (SFNO) system is studied. The Ti concentration optimization yielded an efficient photocatalyst. At an optimum composition of Ti as x = 0.07 in $Sr_2Fe_{1-x}Ti_xNbO_6$, the photocatalyst exhibited 2 times the quantum yield for photolysis of $H_2O$ in presence of $CH_3OH$, than its undoped counterpart under visible light (${\lambda}{\geq}420nm$). Heavily Ti-doped $Sr_2Fe_{1-x}Ti_xNbO_6$ lattice exhibited poor photochemical properties due to the existence of constituent impurity phases as observed in the structural characterization, as well as deteriorated optical absorption. The higher electron-density acquired by n-type doping seem to be responsible for the more efficient charge separation in $Sr_2Fe_{1-x}Ti_xNbO_6$ (0.05 < x < 0.4) and thus consequently displays higher photocatalytic activity. The Ti incorporated structure also found to yield stable photocatalyst.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.104-104
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• 2009

Critical dimensions has rapidly shrunk to increase the degree of integration and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate insulator layer and the low conductivity characteristic of poly-silicon. To cover these faults, the study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$ and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-silicon gate is not compatible with high-k materials for gate-insulator. To integrate high-k gate dielectric materials in nano-scale devices, metal gate electrodes are expected to be used in the future. Currently, metal gate electrode materials like TiN, TaN, and WN are being widely studied for next-generation nano-scale devices. The TaN gate electrode for metal/high-k gate stack is compatible with high-k materials. According to this trend, the study about dry etching technology of the TaN film is needed. In this study, we investigated the etch mechanism of the TaN thin film in an inductively coupled plasma (ICP) system with $O_2/BCl_3/Ar$ gas chemistry. The etch rates and selectivities of TaN thin films were investigated in terms of the gas mixing ratio, the RF power, the DC-bias voltage, and the process pressure. The characteristics of the plasma were estimated using optical emission spectroscopy (OES). The surface reactions after etching were investigated using X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES).

• Journal of Ocean Engineering and Technology
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• v.25 no.4
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• pp.66-71
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• 2011

The flexural strength of $MoSi_2$ based composites reinforced with Nb sheets has been investigated, based on the detailed examination of their microstructure and fractured surface. Both sintered density and porosity of Nb/$MoSi_2$ composites were also examined. Nb/$MoSi_2$ composites were fabricated by different conditions such as temperature, applied pressure and its holding time, using a hot-press device. The volume fraction of Nb sheet in this composite system was fixed as 10%. The characterization of Nb/$MoSi_2$ composites were investigated by means of optical microscopy, scanning electron microscope and three point bending test. Nb/$MoSi_2$ composites represented a dense morphology at the interfacial region, accompanying the creation of two types of reaction layer by the chemical reaction of Nb and $MoSi_2$. Nb/$MoSi_2$ composites possessed an excellent density at the fabricating temperature of $1350^{\circ}C$, corresponded to about 95% of theoretical density. The flexural strength of Nb/$MoSi_2$ romposites were greatly affected by the pressure holding time at the same fabricating temperature, owing to the large suppression of porosity in the microstructure. Especially, Nb/$MoSi_2$ composites represented a good flexural strength of about 310 MPa at the fabricating condition of $1350^{\circ}C$, 30MPa and 60min, accompanying the pseudo-ductile fracture behavior by the deformation of Nb sheet and the interfacial delamination.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.7
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• pp.477-482
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• 2014

$CaNb_2O_6:RE^{3+}$ (RE=Sm or Eu) phosphor powders were prepared with different contents of activator ions by using solid-state reaction method. The X-ray diffraction patterns exhibited that the phosphors synthesized with different activator ions showed an orthorhombic system with a main (131) diffraction peak. The maximum size of the grain particles, determined from the measurement of scanning electron microscopy, was observed at 0.05 mol of $Eu^{3+}$ ions and at 0.01 mol of $Sm^{3+}$. As for the $Eu^{3+}$-doped phosphor powders, the excitation spectra were composed of a broad band peaked at 278 nm and several weak bands in the range of 350~500 nm, and the highest red emission spectrum was observed at 0.15 mol of $Eu^{3+}$ ions. As for the $Sm^{3+}$-activated phosphor powders, three strong emission bands under excitation at 273 nm were observed at 570, 612, and 659 nm, respectively. The intensities of all the emission bands approached maxima for 0.05 mol of $Sm^{3+}$ ions. The optical properties show that the $Eu^{3+}$- or $Sm^{3+}$-doped $CaNb_2O_6$ powders are promising red-orange emitting phosphor powders applicable to full-color photonic devices.

• Journal of Korean Ophthalmic Optics Society
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• v.13 no.1
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• pp.37-42
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• 2008

Purpose: This study is to prepare tintable hard coatings for plastic lenses and to evaluate spectroscopic and surface characteristic for these coatings. Methods: These coatings had been prepared by the sol-gel method using TEOS, MTMS and GPTS. Scanning electron microscopy (SEM), Raman spectroscopy, infrared (IR) spectroscopy and UV/VIS spectroscopy have been used to investigate the optical and structural characteristics of the coatings. Results: Tint ability of this coating was about 2 times higher than general hard coatings. The lenses applied by tintable hard coatings showed excellent adhesion, abrasion resistance, hot water resistance, and chemical resistance. Pencil hardness was 5H and the surface of coatings was smooth and free of cracks. Conclusions: This hard coating system for plastic lenses offered a hard and stable surface that could be tinted.

• Journal of the Korean Society of Propulsion Engineers
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• v.3 no.1
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• pp.95-103
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• 1999

Low pressure combustion characteristics of the composite solid propellants were studied in terms of the propellant burning rate, ignition processes, and the structure of the extinguished surfaces. Optical Vacuum Strand Burner(OVSB) system was designed and configured for this purpose. Burning rates of the propellants were measured at subatmospheric pressure by developed test method in OVSB. The ignition and combustion phenomena of the studied propellants in the combustion chamber of OVSB were recorded and analyzed with the camera and VCR(30 frames/s). Burning surfaces of the propellants were extinguished by rapid depressurization method and analyzed with Scanning Electron Microscope(SEM).

• Journal of Korea Foundry Society
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• v.26 no.5
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• pp.222-226
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• 2006

Steel making slag has gained a considerable attraction as one candidate of eco-materials in research fields for recycling resources. Thus, many researches have been performed but were limited to development of substitute for cement being used in the construction field. A little research work also has been done on development of higher value-added materials, including heat resistant and sound absorbing materials. For this reason, the present study were focused on macrostructure characterization of fabricated slag fibers which are applicable to heat resistant materials. The slag fibers were fabricated through a modified melt extraction method. The processing variables employed were the wheel speed and molten slag temperature. The synthesized fibers were characterized by optical microscope and scanning electron microscopy. It was found that the wheel speed of 1400 rpm generated better quality of mineral fibers in terms of the relative amount of shot, diameter and length. This was attributed to the relative extent of contact width between the flowing melt and the rotating wheel. The thickness of the slag fibers also were decreased with increasing the slag melt temperature due mainly to significant decrease in the viscosity of the slag melt. In addition, the lower melt temperature caused an increase in number of shots plus the mineral fibers.