• 생명과학회지
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• 제15권2호
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• pp.311-315
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• 2005

Pparaquat의 전자수용 및 방출에 대한 작용을 검토한 결과는 다음과 같다. Rat mitocondria분산액에 paraquat를 첨가하였을 때 반응액이 청색으로 변색되었으며 Aluminium 박 또는 동전극을 장치한 photo cell중에서 paraquat에 전류를 통한 경우에도 음극에서부터 청색으로 변색되기 시작하여 660 nm에서 높은 홉광도를 나타내었다. 이 착색반응은 반응액에 산소를 첨가함으로서 탈색되었다. Paraquat에 $H^+$을 첨가하고 전류를 통한 결과 340 nm에서의 홉광도가 증가되었으며 경시적인 흡광도 증가의 모양은 $NAD^+$에 전류를 통한 경우와 거의 일치하였다. 이상의 결과로부터 paraquat가 전자를 수용 또는 방출할 수 있음이 확인되었고 이러한 paraquat의 작용이 생체내에 이화작용에서 생성되는 전자를 포획하고 산소에 직접 넘겨줌으로써 cytochrome 호흡쇄로의 단계별 전자전달계가 차단되어 급성독성을 일으키는 요인으로 추정된다.

• KSBB Journal
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• 제13권3호
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• pp.268-271
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• 1998

Bacteriorhodopsin in the purple membrane (PM) of halobacteria has recently been attracting much attention to be used as a component of molecular electron device and optical computers. In order to increase the productivity of bacteriorhodopsin in high cell density cultures of Halobacterium halobium R1, an internal membrane cell-retention bioreactor system was employed. As a result, the production of cell mass at OD660 of 12 and of bacteriorhodopsin at 125-130 mg/L were obtained using the internal membrane bioreactor system at a dilution rate of 0.066 hr-1. The productivity achieved by the internal membrane system (0.7 mg/L$.$hr) was 3.5-fold higher than that obtained by the corresponding batch cultivations (0.2 mg/L$.$hr).

• 대한기계학회논문집B
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• 제34권1호
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• pp.73-76
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• 2010

MEMS 기술이 발전함에 따라 MEMS 공정으로 제작된 미소 구조물들의 검사 및 특성 분석이 매우 중요한 문제로 떠오르고 있다. 그러나 주사 전자현미경(SEM)이나 원자현미경(AFM) 그리고 기계적 표면측정장치 등은 가격적인 측면에서나 방법적인 측면에서 많은 단점을 안고 있다. 본 논문에서는 DVD 광 픽업 장치를 이용하여 미소구조물을 높이를 측정하였다. 미소구조물 시편에서 반사된 빛의 강도를 측정하여 시편의 영상을 만들어냈고 미소구조물의 높이는 포토다이오드에서 측정된 포커스에러신호(FES)을 통해 구할 수 있었다. 제시된 광 픽업 스캐너는 기존 측정 장치와 비교하여 저렴한 비용으로 정밀한 측정이 가능함을 보여주었고, 기존의 기술을 대체할 수 있는 시스템으로 사용될 수 있을 것이다.

• 한국재료학회지
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• 제23권8호
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• pp.469-475
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• 2013

Al-doped ZnO(AZO) thin films were synthesized using atomid layer deposition(ALD), which acurately controlled the uniform film thickness of the AZO thin films. To investigate the electrical and optical properites of the AZO thin films, AZO films using ALD was controlled to be three different thicknesses (50 nm, 100 nm, and 150 nm). The structural, chemical, electrical, and optical properties of the AZO thin films were analyzed by X-ray diffraction, X-ray photoelectron spectroscopy, field-emssion scanning electron microscopy, atomic force microscopy, Hall measurement system, and UV-Vis spectrophotometry. As the thickness of the AZO thin films increased, the crystallinity of the AZO thin films gradually increased, and the surface morphology of the AZO thin films were transformed from a porous structure to a dense structure. The average surface roughnesses of the samples using atomic force microscopy were ~3.01 nm, ~2.89 nm, and ~2.44 nm, respectively. As the thickness of the AZO filmsincreased, the surface roughness decreased gradually. These results affect the electrical and optical properties of AZO thin films. Therefore, the thickest AZO thin films with 150 nm exhibited excellent resistivity (${\sim}7.00{\times}10^{-4}{\Omega}{\cdot}cm$), high transmittance (~83.2 %), and the best FOM ($5.71{\times}10^{-3}{\Omega}^{-1}$). AZO thin films fabricated using ALD may be used as a promising cadidate of TCO materials for optoelectronic applications.

• 한국광학회지
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• 제7권2호
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• pp.129-135
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• 1996

고립전자쌍을 갖는 비정질 As$_{2}$S$_{3}$ 단층박막에서 처음으로 흡수형 광쌍안정현상을 관측하였다. 광원으로는 렌즈로 집속된 Ar$^{+}$ laser beam (.lambda.=514.5nm)을 사용하였다. 본 실험에서는 공진기가 없는 단층의 박막시료에서 시료의 흡수계수의 온도의존성에 의해 광쌍안정현상이 발생함을 알 수 있었고 이 효과는 물질내에서 흡수단의 가역적인 편이에 의해 설명되었다. 실험에서 광쌍안정조건은 매질의 초기흡수계수와 시료의 두께의 곱에 의해 결정되고 시료의 두께가 0.8.nu.m일 때 이 값은 약 0.12임을 알 수 있었다. 또한 입사 레이저광세기가 150-180mW일 때 스위칭이 뚜렷했고 스위칭시간은 약 $10^{-4}$초였다.

• 한국재료학회지
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• 제24권3호
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• pp.145-151
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• 2014

Solution-based Sb-doped $SnO_2$ (ATO) transparent conductive oxides using a low-temperature process were fabricated by an electrospray technique followed by spin coating. We demonstrated their structural, chemical, morphological, electrical, and optical properties by means of X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, atomic force microscopy, Hall effect measurement system, and UV-Vis spectrophotometry. In order to investigate optimum electrical and optical properties at low-temperature annealing, we systemically coated two layer, four layer, and six layers of ATO sol-solution using spin-coating on the electrosprayed ATO thin films. The resistivity and optical transmittance of the ATO thin films decreased as the thickness of ATO sol-layer increased. Then, the ATO thin films with two sol-layers exhibited superb figure of merit compared to the other samples. The performance improvement in a low temperature process ($300^{\circ}C$) can be explained by the effect of enhanced carrier concentration due to the improved densification of the ATO thin films causing the optimum sol-layer coating. Therefore, the solution-based ATO thin films prepared at $300^{\circ}C$C exhibited the superb electrical (${\sim}7.25{\times}10^{-3}{\Omega}{\cdot}cm$) and optical transmittance (~83.1 %) performances.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.174-174
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• 2000

A strong antiferromagnetic coupling in Fe/Si multilayered films (MLF) had been recently discovered and much consideration has been given to whether the coupling in the Fe/Si MLF system has the same origin as the metal/metal MLF. Nevertheless, the nature of the interfacial ron silicide is still controversial. On one hand, a metal/ semiconductor structure was suggested with a narrow band-gap semiconducting $\varepsilon$-FeSi spacer that mediates the coupling. However, some features show that the nature of coupling can be well understood in terms of the conventional metal/metal multilayered system. It is well known that both magneto-optical (MO) and optical properties of a metal depend strongly on their electronic structure that is also correlated with the atomic and chemical ordering. In this study, the nature of the interfacial regions is the Fe/Si multilayers has been investigated by the experimental and computer-simulated MO and optical spectroscopies. The Fe/Si MLF were prepared by rf-sputtering onto glass substrates at room temperature with the number of repetition N=50. The thickness of Fe sublayer was fixed at 3.0nm while the Si sublayer thickness was varied from 1.0 to 2.0 nm. The topmost layer of all the Fe/Si MLF is Fe. In order to carry out the computer simulations, the information on the MO and optical parameters of the materials that may constitute a real multilayered structure should be known in advance. For this purpose, we also prepared Fe, Si, FeSi2 and FeSi samples. The structural characterization of Fe/Si MLF was performed by low- and high -angle x-ray diffraction with a Cu-K$\alpha$ radiation and by transmission electron microscopy. A bulk $\varepsilon$-FeSi was also investigated. The MO and optical properties were measured at room temperature in the 1.0-4.7 eV energy range. The theoretical simulations of MO and optical properties for the Fe/Si MLF were performed by solving exactly a multireflection problem using the scattering matrix approach assuming various stoichiometries of a nonmagnetic spacer separating the antiferromagnetically coupled Fe layers. The simulated spectra of a model structure of FeSi2 or $\varepsilon$-FeSi as the spacer turned out to fail in explaining the experimental spectra of the Fe/Si MLF in both intensity and shape. Thus, the decisive disagreement between experimental and simulated MO and optical properties ruled out the hypothesis of FeSi2 and $\varepsilon$-FeSi as the nonmagnetic spacer. By supposing the spontaneous formation of a metallic ζ-FeSi, a reasonable agreement between experimental and simulated MO and optical spectra was obtained.

• 센서학회지
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• 제15권3호
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• pp.186-191
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• 2006

In general, Cerenkov light is produced by a charged particle that passes through a medium with a velocity greater than that of visible light. Although the wavelength of Cerenkov light is very broad, the peak is in the almost visible range from 400 to 480 nm. Therefore, it always causes a problem to detect a real light signal that is generated in the scintillator on the fiber-optic sensor tip for dose measurements of high-energy electron beam. The objectives of this study are to measure, characterize and remove Cerenkov light generated in a fiber-optic radiation sensor tip to detect a real light signal from the scintillator. In this study, the intensity of Cerenkov light is measured and characterized as a function of incident angle of electron beam from a LINAC, and as a function of the energy of electron beam. As a measuring device, a photodiode-amplifier system is used, and a subtraction method using a background optical fiber is investigated to remove Cerenkov light.

• 한국결정성장학회지
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• 제7권1호
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• pp.70-75
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• 1997

Electron beam 증착법을 보완하여 GaAs(100)기판위에 cubic(zinc blende) CdSe 에피충을 성장시켜 그의 특성을 조사하였다 .. CdSe 에피충의 격자 상수는 6.077 A였으며, 배향 성은 ECP 패번에 의하여 확인되고 결정성은 DCXR curve로 관찰하였다. 상온에서 측정된 H Hall data로는 에피충의 운반자 농도와 이통도는 각각 1018cm-3, 102cm2N' see 정도임을 알았 고 30 K에서 측정한 PC spectra peak는 cubic CdSe의 free exciton에 기인된 것으로 1.746 e eV에서 예리하게 나타냐고 있음을 보여주고 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.358-358
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• 2012

The application of BZO (Boron-doped Zinc Oxide) films use as the TCO(Transparent Conductive Oxide) material for display and solar cell industries, where the conductivity of the BZO films plays a critical role for improvement of cell performance. Thin BZO films are deposited on glass substrates by using RF sputter system. Then charging flow rates of O2 gas from zero to 10 sccm, thereby controlling the impurity concentration of BZO. BZO deposited on soda lime glass and RF power was 300 W, frequency was 13.56 MHz, and working pressure was $5.0{\times}10-6$ Torr. The Substrate and glass between distance 200 mm. We measured resistivity, conductivity, mobility by hall measurement system. Optical properties measured by photo voltaic device analysis system. We measured surface build according to oxygen flow rate from XPS (X-ray Photoelectron Spectroscopy) system. The profile of the energy distribution of the electrons emitted from BZO films by the Auger neutralization is measured and rescaled so that Auger self-convolution arises, revealing the detail structure of the valence band. It may be observed coefficient ${\gamma}$ of the secondary electron emission from BZO by using ${\gamma}$-FIB (Gamma-Focused Ion Beam) system. We observed the change in electrical conductivity by correlation of the valence band structure. Therefore one of the key issues in BZO films may be the valence band that detail structure dominates performance of solar cell devices. Demonstrating the secondary electron emission by the Auger neutralization of ions is useful for the determination of the characteristics of BZO films for solar cell and display developments.