• Progress in Medical Physics
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• v.15 no.4
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• pp.215-219
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• 2004

Due to their excellence for the high-energy therapy range of photon beams, researchers show increasing interest in applying MOSFET dosimeters to low- and medium-energy applications. In this energy range, however, MOSFET dosimeter is complicated by the fact that the interaction probability of photons shows significant dependence on the atomic number, Z, due to photoelectric effect. The objective of this study is to develop a very detailed 3-dimensional Monte Carlo simulation model of a MOSFET dosimeter for radiological characterizations and calibrations. The sensitive volume of the High-Sensitivity MOSFET dosimeter is very thin (1 ${\mu}{\textrm}{m}$) and the standard MCNP tallies do not accurately determine absorbed dose to the sensitive volume. Therefore, we need to score the energy deposition directly from electrons. The developed model was then used to study various radiological characteristics of the MOSFET dosimeter. the energy dependence was quantified for the energy range 15 keV to 6 MeV; finding maximum dependence of 6.6 at about 40 keV. A commercial computer code, Sabrina, was used to read the particle track information from an MCNP simulation and count the tracks of simulated electrons. The MOSFET dosimeter estimated the calibration factor by 1.16 when the dosimeter was at 15 cm depth in tissue phantom for 662 keV incident photons. Our results showed that the MOSFET dosimeter estimated by 1.11 for 1.25 MeV photons for the same condition.

• Journal of Radiation Protection and Research
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• v.48 no.4
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• pp.167-174
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• 2023

Background: A nondestructive test is commonly used to inspect the surface defects and internal structure of an object without any physical damage. X-rays generated from an electron accelerator or a tube are one of the methods used for nondestructive testing. The high penetration of X-rays through materials with low atomic numbers makes it difficult to discriminate between these materials using X-ray imaging. The interaction characteristics of neutrons with materials can supplement the limitations of X-ray imaging in material discrimination. Materials and Methods: The radiation image acquisition process for air-cargo security inspection equipment using X-rays and neutrons was simulated using a GEometry ANd Tracking (Geant4) simulation toolkit. Radiation images of phantoms composed of 13 materials were obtained, and the R-value, representing the attenuation ratio of neutrons and gamma rays in a material, was calculated from these images. Results and Discussion: The R-values were calculated from the simulated X-ray and neutron images for each phantom and compared with those obtained in the experiments. The R-values obtained from the experiments were higher than those obtained from the simulations. The difference can be due to the following two causes. The first reason is that there are various facilities or equipment in the experimental environment that scatter neutrons, unlike the simulation. The other is the difference in the neutron signal processing. In the simulation, the neutron signal is the sum of the number of neutrons entering the detector. However, in the experiment, the neutron signal was obtained by superimposing the intensities of the neutron signals. Neutron detectors also detect gamma rays, and the neutron signal cannot be clearly distinguished in the process of separating the two types of radiation. Despite these differences, the two results showed similar trends and the viability of using simulation-based radiation images, particularly in the field of security screening. With further research, the simulation-based radiation images can replace ones from experiments and be used in the related fields. Conclusion: The Korea Atomic Energy Research Institute has developed air-cargo security inspection equipment using neutrons and X-rays. Using this equipment, radiation images and R-values for various materials were obtained. The equipment was reconstructed, and the R-values were obtained for 13 materials using the Geant4 simulation toolkit. The R-values calculated by experiment and simulation show similar trends. Therefore, we confirmed the feasibility of using the simulation-based radiation image.

• The Journal of Korean Society for Radiation Therapy
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• v.25 no.2
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• pp.145-151
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• 2013

Purpose: In this study, we analyzed how the dose change by field size effects on atomic number of shielding materials while using 6 MeV election beam. Materials and Methods: The parallel plate chamber is mounted in $25{\times}25cm^2$ the phantom such that the entrance window of the detector is flush with the phantom surface. phantom was covered laterally with aluminum, copper and lead which thickness have 5% of allowable transmission and then the doses were measured in field size $6{\times}6$, $10{\times}10$ and $20{\times}20cm^2$ respectively. 100 cGy was irradiated using 6 MeV electron beam and SSD (Source Surface Distance) was 100 cm with $10{\times}10cm^2$ field size. To calculate the photon flux, electron flux and Energy deposition produced after pass materals respectively, MCNPX code was used. Results: The results according to the various shielding materials which have 5% of allowable transmission are as in the following. Thickness change rate with field size of $6{\times}6cm^2$ and $20{\times}20cm^2$ that compared to the field size of $10{\times}10cm^2$ found to be +0.06% and -0.06% with aluminum, +0.13% and -0.1% with copper, -1.53% and +1.92% with lead respectively. Compare to the field size $10{\times}10cm^2$, energy deposition for $6{\times}6cm^2$ and $20{\times}20cm^2$ had -4.3% and +4.85% respectively without shielding material. With aluminum it had -0.87% and +6.93% respectively and with lead it had -4.16% and +5.57% respectively. When it comes to photon flux with $6{\times}6cm^2$ and $20{\times}20cm^2$ of field sizes the chance -8.95% and +15.92% without shielding material respectively, with aluminum the number -15.56% and +16.06% respectively and with copper the chance -12.27% and +15.53% respectively, with lead the number +12.36% and -19.81% respectively. In case of electron flux in the same condition, the number -3.92% and +4.55% respectively without shielding material respectively, with aluminum the number +0.59% and +6.87% respectively, with copper the number -1.59% and +3.86% respectively, with lead the chance -5.15% and +4.00% respectively. Conclusion: In this study, we found that the required thickness of the shielding materials got thinner with low atomic number substance as the irradiation field is increasing. On the other hand, with high atomic number substance the required thickness had increased. In addition, bremsstrahlung radiation have an influence on low atomic number materials and high atomic number materials are effected by scattered electrons.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.80-81
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• 2012

Recently, one of the critical issues in the etching processes of the nanoscale devices is to achieve ultra-high aspect ratio contact (UHARC) profile without anomalous behaviors such as sidewall bowing, and twisting profile. To achieve this goal, the fluorocarbon plasmas with major advantage of the sidewall passivation have been used commonly with numerous additives to obtain the ideal etch profiles. However, they still suffer from formidable challenges such as tight limits of sidewall bowing and controlling the randomly distorted features in nanoscale etching profile. Furthermore, the absence of the available plasma simulation tools has made it difficult to develop revolutionary technologies to overcome these process limitations, including novel plasma chemistries, and plasma sources. As an effort to address these issues, we performed a fluorocarbon surface kinetic modeling based on the experimental plasma diagnostic data for silicon dioxide etching process under inductively coupled C4F6/Ar/O2 plasmas. For this work, the SiO2 etch rates were investigated with bulk plasma diagnostics tools such as Langmuir probe, cutoff probe and Quadruple Mass Spectrometer (QMS). The surface chemistries of the etched samples were measured by X-ray Photoelectron Spectrometer. To measure plasma parameters, the self-cleaned RF Langmuir probe was used for polymer deposition environment on the probe tip and double-checked by the cutoff probe which was known to be a precise plasma diagnostic tool for the electron density measurement. In addition, neutral and ion fluxes from bulk plasma were monitored with appearance methods using QMS signal. Based on these experimental data, we proposed a phenomenological, and realistic two-layer surface reaction model of SiO2 etch process under the overlying polymer passivation layer, considering material balance of deposition and etching through steady-state fluorocarbon layer. The predicted surface reaction modeling results showed good agreement with the experimental data. With the above studies of plasma surface reaction, we have developed a 3D topography simulator using the multi-layer level set algorithm and new memory saving technique, which is suitable in 3D UHARC etch simulation. Ballistic transports of neutral and ion species inside feature profile was considered by deterministic and Monte Carlo methods, respectively. In case of ultra-high aspect ratio contact hole etching, it is already well-known that the huge computational burden is required for realistic consideration of these ballistic transports. To address this issue, the related computational codes were efficiently parallelized for GPU (Graphic Processing Unit) computing, so that the total computation time could be improved more than few hundred times compared to the serial version. Finally, the 3D topography simulator was integrated with ballistic transport module and etch reaction model. Realistic etch-profile simulations with consideration of the sidewall polymer passivation layer were demonstrated.