• 한국의학물리학회지:의학물리
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• 제15권4호
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• pp.215-219
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• 2004

MOSFET 선량계는 기존의 선량계들에 비해 여러 가지 장점이 있기 때문에 최근에 방사선 치료뿐만 아니라 방사선 진단 등 기타 여러 분야에서 선량검증을 위해 시도되고 있다. 하지만 이렇게 사용되기 위해서는 중ㆍ저에너지 범위의 광자선에 대한 MOSFET 선량계의 방사선학적 특성파악이 선행되어야 한다. 본 연구에서는 고감도 MOSFET 선량계의 여러가지 방사선학적 특성을 자세하게 연구할 수 있는 3차원 몬테칼로 전산모사 모델을 개발하였다. 고감도 MOSFET 선량계의 검출부위는 매우 얇아서 MCNP에서 기본적으로 제공하는 Tally를 사용하면 검출부위에 흡수된 에너지를 정확하게 결정할 수 없으므로 검출부위에 주어진 에너지를 전자들의 트랙들로부터 직접 계산하는 방법을 채택하였다. 개발된 모델은 에너지 의존도, 전자 기여도, 깊이 의존도 등의 MOSFET 선량계의 방사선학적 특성을 연구하기 위해 사용되었다. 에너지 의존도는 15 keV에서 6 MeV 에너지 범위에서 정량화하였는데 약 40 keV에서 최대 6.6으로 나타났다. 본 연구에서는 PTRAC 파일과 Sabrina 코드를 이용하여 MOSFET 선량계 각 부분에서의 전자 기여도를 조사하였다. 깊이 의존도는 신체 내 평균 깊이를 15 cm로 가정할 때 0.662 MeV의 경우는 교정인자 1.16 그리고 1.25 MeV의 경우는 교정인자 1.11을 사용하여 깊이 의존도에 의한 오차를 줄일 수 있다.

• Journal of Radiation Protection and Research
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• 제48권4호
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• pp.167-174
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• 2023

Background: A nondestructive test is commonly used to inspect the surface defects and internal structure of an object without any physical damage. X-rays generated from an electron accelerator or a tube are one of the methods used for nondestructive testing. The high penetration of X-rays through materials with low atomic numbers makes it difficult to discriminate between these materials using X-ray imaging. The interaction characteristics of neutrons with materials can supplement the limitations of X-ray imaging in material discrimination. Materials and Methods: The radiation image acquisition process for air-cargo security inspection equipment using X-rays and neutrons was simulated using a GEometry ANd Tracking (Geant4) simulation toolkit. Radiation images of phantoms composed of 13 materials were obtained, and the R-value, representing the attenuation ratio of neutrons and gamma rays in a material, was calculated from these images. Results and Discussion: The R-values were calculated from the simulated X-ray and neutron images for each phantom and compared with those obtained in the experiments. The R-values obtained from the experiments were higher than those obtained from the simulations. The difference can be due to the following two causes. The first reason is that there are various facilities or equipment in the experimental environment that scatter neutrons, unlike the simulation. The other is the difference in the neutron signal processing. In the simulation, the neutron signal is the sum of the number of neutrons entering the detector. However, in the experiment, the neutron signal was obtained by superimposing the intensities of the neutron signals. Neutron detectors also detect gamma rays, and the neutron signal cannot be clearly distinguished in the process of separating the two types of radiation. Despite these differences, the two results showed similar trends and the viability of using simulation-based radiation images, particularly in the field of security screening. With further research, the simulation-based radiation images can replace ones from experiments and be used in the related fields. Conclusion: The Korea Atomic Energy Research Institute has developed air-cargo security inspection equipment using neutrons and X-rays. Using this equipment, radiation images and R-values for various materials were obtained. The equipment was reconstructed, and the R-values were obtained for 13 materials using the Geant4 simulation toolkit. The R-values calculated by experiment and simulation show similar trends. Therefore, we confirmed the feasibility of using the simulation-based radiation image.

• 대한방사선치료학회지
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• 제25권2호
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• pp.145-151
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• 2013

목 적: 본 연구에서 우리는 6 MeV 전자선의 조사야 확대에 따른 선량변화가 차폐물질 원자번호와 관계가 있음을 알아보고 그 영향인자를 분석 하고자 한다. 대상 및 방법: 먼저 평행평판형 전리함(Exradin P11)을 $25{\times}25cm^2$ 폴리스티렌 팬텀표면에 평탄하게 끼운다. 허용투과율 5% 두께의 알루미늄, 구리, 납 물질들을 팬텀 상단에 차폐시킨 후 조사야 $6{\times}6$, $10{\times}10$ 그리고 $20{\times}20cm^2$별로 측정하였다. 조사조건은 선원-표면간거리 100 cm에서 기준조사야인 $10{\times}10cm^2$에 6 MeV 전자선을 이용하여 100 cGy 조사하였다. 다음으로 MCNP (Monte Carlo N Particle Transport Code)를 이용하여 각 물질 통과 후 발생되는 광자수, 전자수, 그리고 축적에너지를 계산하였다. 결 과: 허용투과율 5% 두께에 대한 차폐물 종류에 따른 측정결과 조사야 $10{\times}10cm^2$을 기준으로 한 $6{\times}6cm^2$과 $20{\times}20cm^2$의 두께변화율은 알루미늄에서 각각 +0.06%와 -0.06%, 구리에서 각각 +0.13%와 -0.1%, 납에서 각각 -1.53%와 +1.92%였다. 계산결과 조사야 $10{\times}10cm^2$ 대비 $6{\times}6cm^2$, $20{\times}20cm^2$의 축적에너지는 차폐를 하지 않았을 경우 각각 -4.3%와 +4.85%, 알루미늄 사용 시 각각 -0.87%와 +6.93%, 구리 사용 시 각각 -2.46%와 +4.48%, 납 사용 시 각각 -4.16%와 +5.57%였다. 광자수의 경우 차폐를 하지 않았을 경우 각각 -8.95%와 +15.92%, 알루미늄 사용 시 각각 -15.56%와 +16.06%, 구리 사용시 각각 -12.27%와 +15.53%, 납 사용 시 각각 -12.36%와 +19.81%였다. 전자수의 경우 차폐를 하지 않았을 경우 각각 -3.92%와 +4.55%, 알루미늄 사용 시 각각 +0.59%와 +6.87%, 구리 사용 시 각각 -1.59%와 +3.86%, 납 사용 시 각각 -5.15%와 +4.00%였다. 결 론: 본 연구로 조사야 증가함에 따른 차폐물 두께가 저 원자번호에서 감소하며, 고 원자번호에서는 증가함을 볼 수 있었으며, 계산을 통해 저 원자번호물질에서는 저지방사선, 고 원자번호물질에서는 산란전자가 영향을 주는 것을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.80-81
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• 2012

Recently, one of the critical issues in the etching processes of the nanoscale devices is to achieve ultra-high aspect ratio contact (UHARC) profile without anomalous behaviors such as sidewall bowing, and twisting profile. To achieve this goal, the fluorocarbon plasmas with major advantage of the sidewall passivation have been used commonly with numerous additives to obtain the ideal etch profiles. However, they still suffer from formidable challenges such as tight limits of sidewall bowing and controlling the randomly distorted features in nanoscale etching profile. Furthermore, the absence of the available plasma simulation tools has made it difficult to develop revolutionary technologies to overcome these process limitations, including novel plasma chemistries, and plasma sources. As an effort to address these issues, we performed a fluorocarbon surface kinetic modeling based on the experimental plasma diagnostic data for silicon dioxide etching process under inductively coupled C4F6/Ar/O2 plasmas. For this work, the SiO2 etch rates were investigated with bulk plasma diagnostics tools such as Langmuir probe, cutoff probe and Quadruple Mass Spectrometer (QMS). The surface chemistries of the etched samples were measured by X-ray Photoelectron Spectrometer. To measure plasma parameters, the self-cleaned RF Langmuir probe was used for polymer deposition environment on the probe tip and double-checked by the cutoff probe which was known to be a precise plasma diagnostic tool for the electron density measurement. In addition, neutral and ion fluxes from bulk plasma were monitored with appearance methods using QMS signal. Based on these experimental data, we proposed a phenomenological, and realistic two-layer surface reaction model of SiO2 etch process under the overlying polymer passivation layer, considering material balance of deposition and etching through steady-state fluorocarbon layer. The predicted surface reaction modeling results showed good agreement with the experimental data. With the above studies of plasma surface reaction, we have developed a 3D topography simulator using the multi-layer level set algorithm and new memory saving technique, which is suitable in 3D UHARC etch simulation. Ballistic transports of neutral and ion species inside feature profile was considered by deterministic and Monte Carlo methods, respectively. In case of ultra-high aspect ratio contact hole etching, it is already well-known that the huge computational burden is required for realistic consideration of these ballistic transports. To address this issue, the related computational codes were efficiently parallelized for GPU (Graphic Processing Unit) computing, so that the total computation time could be improved more than few hundred times compared to the serial version. Finally, the 3D topography simulator was integrated with ballistic transport module and etch reaction model. Realistic etch-profile simulations with consideration of the sidewall polymer passivation layer were demonstrated.